JP2006303309A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2006303309A
JP2006303309A JP2005125227A JP2005125227A JP2006303309A JP 2006303309 A JP2006303309 A JP 2006303309A JP 2005125227 A JP2005125227 A JP 2005125227A JP 2005125227 A JP2005125227 A JP 2005125227A JP 2006303309 A JP2006303309 A JP 2006303309A
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JP
Japan
Prior art keywords
plasma
sample
vacuum
processing apparatus
gas
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005125227A
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English (en)
Japanese (ja)
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JP2006303309A5 (enExample
Inventor
Katanobu Yokogawa
賢悦 横川
Kenji Maeda
賢治 前田
Hiroyuki Kobayashi
浩之 小林
Masaru Izawa
勝 伊澤
Tadamitsu Kanekiyo
任光 金清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2005125227A priority Critical patent/JP2006303309A/ja
Priority to US11/201,243 priority patent/US20060236932A1/en
Publication of JP2006303309A publication Critical patent/JP2006303309A/ja
Publication of JP2006303309A5 publication Critical patent/JP2006303309A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2005125227A 2005-04-22 2005-04-22 プラズマ処理装置 Pending JP2006303309A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005125227A JP2006303309A (ja) 2005-04-22 2005-04-22 プラズマ処理装置
US11/201,243 US20060236932A1 (en) 2005-04-22 2005-08-11 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005125227A JP2006303309A (ja) 2005-04-22 2005-04-22 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2006303309A true JP2006303309A (ja) 2006-11-02
JP2006303309A5 JP2006303309A5 (enExample) 2008-04-03

Family

ID=37185529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005125227A Pending JP2006303309A (ja) 2005-04-22 2005-04-22 プラズマ処理装置

Country Status (2)

Country Link
US (1) US20060236932A1 (enExample)
JP (1) JP2006303309A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135739A (ja) * 2006-11-15 2008-06-12 Applied Materials Inc プラズマ放射分布の磁気コントロール増強のためのプラズマ閉じ込めバッフルおよび流量平衡器
JP2008231574A (ja) * 2007-03-08 2008-10-02 Applied Materials Inc プラズマコーティングチャンバ用吸引装置
JP2008277773A (ja) * 2007-03-21 2008-11-13 Applied Materials Inc ガス流拡散器
JP2009500812A (ja) * 2005-06-20 2009-01-08 ラム リサーチ コーポレーション ポリマーの堆積を低減するためのｒｆ吸収材料を含むプラズマ閉じ込めリング
JP2011507134A (ja) * 2007-12-06 2011-03-03 インテバック・インコーポレイテッド 基板を両面スパッタエッチングするシステム及び方法
JP2012186248A (ja) * 2011-03-04 2012-09-27 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2015032819A (ja) * 2013-08-07 2015-02-16 株式会社ディスコ プラズマエッチング装置
JP5669991B1 (ja) * 2014-03-31 2015-02-18 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
JP2015037139A (ja) * 2013-08-14 2015-02-23 株式会社ディスコ プラズマエッチング装置
US9236246B2 (en) 2011-03-04 2016-01-12 Hitachi Kokusai Electric Inc. Substrate processing apparatus and a method of manufacturing a semiconductor device
KR20160033594A (ko) 2014-09-18 2016-03-28 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR20160073305A (ko) * 2014-12-16 2016-06-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2020119962A (ja) * 2019-01-22 2020-08-06 東京エレクトロン株式会社 プラズマ処理装置
CN112447488A (zh) * 2020-12-17 2021-03-05 上海谙邦半导体设备有限公司 一种反应腔装置及其工作方法
JP2021077837A (ja) * 2019-11-05 2021-05-20 ピーエスケー インコーポレイテッド 基板処理装置
JP2023523489A (ja) * 2020-04-30 2023-06-06 アプライド マテリアルズ インコーポレイテッド 改良された選択性およびフローコンダクタンスを有する金属酸化物前洗浄チャンバ

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KR20100061731A (ko) * 2007-09-14 2010-06-08 퀄컴 엠이엠스 테크놀로지스, 인크. Ｍｅｍｓ 제조에 이용되는 에칭 방법
US8840725B2 (en) * 2009-11-11 2014-09-23 Applied Materials, Inc. Chamber with uniform flow and plasma distribution
WO2011138239A1 (en) * 2010-05-06 2011-11-10 Oerlikon Solar Ag, Truebbach Plasma reactor
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
WO2015023435A1 (en) * 2013-08-12 2015-02-19 Applied Materials, Inc. Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
JP5944883B2 (ja) * 2013-12-18 2016-07-05 東京エレクトロン株式会社 粒子逆流防止部材及び基板処理装置
TWI649777B (zh) * 2014-03-31 2019-02-01 日商Spp科技股份有限公司 電漿處理裝置
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10350725B2 (en) * 2016-02-23 2019-07-16 Panasonic Intellectual Property Management Co., Ltd. RAMO4 substrate and manufacturing method thereof
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10519545B2 (en) 2016-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
JP6972131B2 (ja) * 2016-12-27 2021-11-24 エヴァテック・アーゲー 真空プラズマ加工対象物処理装置
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
JP2019075517A (ja) * 2017-10-19 2019-05-16 東京エレクトロン株式会社 処理装置及び拡散路を有する部材
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
CN113838730B (zh) * 2020-06-08 2024-05-14 中微半导体设备(上海)股份有限公司 气体遮挡环、等离子体处理装置及调控聚合物分布的方法

Citations (10)

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Publication number Priority date Publication date Assignee Title
JPH0237717A (ja) * 1988-07-27 1990-02-07 Tokyo Electron Ltd 処理装置
JPH058937U (ja) * 1991-03-29 1993-02-05 住友金属工業株式会社 平行平板型プラズマエツチング装置
JPH06163467A (ja) * 1992-11-19 1994-06-10 Hitachi Ltd エッチング装置
JPH08335568A (ja) * 1995-06-07 1996-12-17 Tokyo Electron Ltd エッチング装置
JPH1022263A (ja) * 1996-06-28 1998-01-23 Sony Corp プラズマエッチング装置
JPH1074738A (ja) * 1997-07-11 1998-03-17 Kokusai Electric Co Ltd ウェーハ処理装置
JP2000058518A (ja) * 1998-07-31 2000-02-25 Kokusai Electric Co Ltd 基板処理装置
JP2002075974A (ja) * 2000-07-07 2002-03-15 Applied Materials Inc 取外し可能なチャンバライナーを有する多目的処理チャンバ
JP2002231703A (ja) * 2001-01-30 2002-08-16 Anelva Corp プラズマ処理装置
JP2002533949A (ja) * 1998-12-28 2002-10-08 ラム リサーチ コーポレーション プラズマリアクタにおける穿孔プラズマ閉じ込めリング

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Patent Citations (10)

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Publication number Priority date Publication date Assignee Title
JPH0237717A (ja) * 1988-07-27 1990-02-07 Tokyo Electron Ltd 処理装置
JPH058937U (ja) * 1991-03-29 1993-02-05 住友金属工業株式会社 平行平板型プラズマエツチング装置
JPH06163467A (ja) * 1992-11-19 1994-06-10 Hitachi Ltd エッチング装置
JPH08335568A (ja) * 1995-06-07 1996-12-17 Tokyo Electron Ltd エッチング装置
JPH1022263A (ja) * 1996-06-28 1998-01-23 Sony Corp プラズマエッチング装置
JPH1074738A (ja) * 1997-07-11 1998-03-17 Kokusai Electric Co Ltd ウェーハ処理装置
JP2000058518A (ja) * 1998-07-31 2000-02-25 Kokusai Electric Co Ltd 基板処理装置
JP2002533949A (ja) * 1998-12-28 2002-10-08 ラム リサーチ コーポレーション プラズマリアクタにおける穿孔プラズマ閉じ込めリング
JP2002075974A (ja) * 2000-07-07 2002-03-15 Applied Materials Inc 取外し可能なチャンバライナーを有する多目的処理チャンバ
JP2002231703A (ja) * 2001-01-30 2002-08-16 Anelva Corp プラズマ処理装置

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009500812A (ja) * 2005-06-20 2009-01-08 ラム リサーチ コーポレーション ポリマーの堆積を低減するためのｒｆ吸収材料を含むプラズマ閉じ込めリング
JP2008135739A (ja) * 2006-11-15 2008-06-12 Applied Materials Inc プラズマ放射分布の磁気コントロール増強のためのプラズマ閉じ込めバッフルおよび流量平衡器
JP2008231574A (ja) * 2007-03-08 2008-10-02 Applied Materials Inc プラズマコーティングチャンバ用吸引装置
JP2008277773A (ja) * 2007-03-21 2008-11-13 Applied Materials Inc ガス流拡散器
TWI401367B (zh) * 2007-03-21 2013-07-11 Applied Materials Inc 氣流擴散器
US9165587B2 (en) 2007-12-06 2015-10-20 Intevac, Inc. System and method for dual-sided sputter etch of substrates
JP2011507134A (ja) * 2007-12-06 2011-03-03 インテバック・インコーポレイテッド 基板を両面スパッタエッチングするシステム及び方法
US8784622B2 (en) 2007-12-06 2014-07-22 Intevac, Inc. System and method for dual-sided sputter etch of substrates
US9236246B2 (en) 2011-03-04 2016-01-12 Hitachi Kokusai Electric Inc. Substrate processing apparatus and a method of manufacturing a semiconductor device
US9472424B2 (en) 2011-03-04 2016-10-18 Hitachi Kokusai Electric Inc. Substrate processing apparatus and a method of manufacturing a semiconductor device
JP2012186248A (ja) * 2011-03-04 2012-09-27 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2015032819A (ja) * 2013-08-07 2015-02-16 株式会社ディスコ プラズマエッチング装置
JP2015037139A (ja) * 2013-08-14 2015-02-23 株式会社ディスコ プラズマエッチング装置
KR20160137917A (ko) * 2014-03-31 2016-12-02 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 처리 장치
JP5669991B1 (ja) * 2014-03-31 2015-02-18 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
WO2015151570A1 (ja) * 2014-03-31 2015-10-08 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
KR102170959B1 (ko) * 2014-03-31 2020-10-28 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 처리 장치
JPWO2015151570A1 (ja) * 2014-03-31 2017-04-13 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
WO2015151147A1 (ja) * 2014-03-31 2015-10-08 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
KR102316260B1 (ko) * 2014-09-18 2021-10-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
TWI662585B (zh) * 2014-09-18 2019-06-11 日商東京威力科創股份有限公司 電漿處理裝置
JP2016063083A (ja) * 2014-09-18 2016-04-25 東京エレクトロン株式会社 プラズマ処理装置
KR20160033594A (ko) 2014-09-18 2016-03-28 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR20160073305A (ko) * 2014-12-16 2016-06-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR102352699B1 (ko) * 2014-12-16 2022-01-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2020119962A (ja) * 2019-01-22 2020-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP7224192B2 (ja) 2019-01-22 2023-02-17 東京エレクトロン株式会社 プラズマ処理装置
JP2021077837A (ja) * 2019-11-05 2021-05-20 ピーエスケー インコーポレイテッド 基板処理装置
JP2023523489A (ja) * 2020-04-30 2023-06-06 アプライド マテリアルズ インコーポレイテッド 改良された選択性およびフローコンダクタンスを有する金属酸化物前洗浄チャンバ
JP7617114B2 (ja) 2020-04-30 2025-01-17 アプライド マテリアルズ インコーポレイテッド 改良された選択性およびフローコンダクタンスを有する金属酸化物前洗浄チャンバ
CN112447488A (zh) * 2020-12-17 2021-03-05 上海谙邦半导体设备有限公司 一种反应腔装置及其工作方法

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