JP2006302940A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006302940A JP2006302940A JP2005118223A JP2005118223A JP2006302940A JP 2006302940 A JP2006302940 A JP 2006302940A JP 2005118223 A JP2005118223 A JP 2005118223A JP 2005118223 A JP2005118223 A JP 2005118223A JP 2006302940 A JP2006302940 A JP 2006302940A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 15
- 238000007796 conventional method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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Abstract
【解決手段】 半導体基板裏面に電極が形成されている半導体装置において、半導体基板の裏面に凹凸構造を形成した後、裏面電極を形成しリードフレームに固着することで寄生抵抗を下げ駆動能力を向上させる。
【選択図】 図1
Description
(1)半導体チップ裏面に裏面電極を有する半導体装置において、半導体チップ裏面に凹凸構造を有する半導体装置とした。
(2)(1)記載の半導体装置において、前記凹凸構造がストライプパターンを成す半導体装置とした。
(3)(1)記載の半導体装置において、前記凹凸構造が格子パターンを成す半導体装置とした。
(4)(1)記載の半導体装置において、前記凹凸構造が非直線パターンを成す半導体装置とした。
(5)上記(1)から(4)の半導体装置において前記凹凸構造のパターンが、半導体チップを形成する半導体基板の結晶方位<100>に対し平行な半導体装置とした。
(6)半導体チップ裏面に裏面電極を有する半導体装置において、前記裏面電極の表面に前記凹凸構造を有する半導体装置とした。
(7)上記(6)の半導体装置において、前記凹凸構造がストライプパターンを成す半導体装置とした。
(8)上記(6)の半導体装置において、前記凹凸構造が格子パターンを成す半導体装置とした。
(9)上記(6)の半導体装置において、前記凹凸構造が非直線パターンを成す半導体装置とした。
(10)半導体チップ裏面に裏面電極を有する半導体装置において、前記裏面電極と接触するリードフレーム表面に前記凹凸構造を有するリードフレームを用いた半導体装置とした。
(11)上記(10)の半導体装置において、前記凹凸構造がストライプパターンを成す半導体装置とした。
(12)上記(10)の半導体装置において、前記凹凸構造が格子パターンを成す半導体装置とした。
(13)上記(10)の半導体装置において、前記凹凸構造が非直線パターンを成す半導体装置とした。
002 半導体チップ
004 裏面電極
005 リードフレーム
006 導電ペースト
009 半導体チップ
011 トランジスタ
012 半導体基板抵抗
013 ペースト抵抗
014 トランジスタのゲート
015 トランジスタのドレイン
016 トランジスタのソース
017 リードフレーム表面
Claims (13)
- 半導体チップ裏面に裏面電極を有する半導体装置において、前記半導体チップ裏面に凹凸構造を有し、前記裏面電極は前記凹凸構造に沿って形成されている半導体装置。
- 前記凹凸構造がストライプパターンを成す請求項1記載の半導体装置。
- 前記凹凸構造が格子パターンを成す請求項1記載の半導体装置。
- 前記凹凸構造が非直線パターンを成す請求項1記載の半導体装置。
- 前記凹凸構造のパターンが、半導体基板の結晶方位<100>に対し平行な請求項1から請求項3までのいずれか1項に記載された半導体装置。
- 半導体チップ裏面に裏面電極を有する半導体装置において、前記裏面電極の下表面に凹凸構造を有する半導体装置。
- 前記凹凸構造がストライプパターンを成す請求項6記載の半導体装置。
- 前記凹凸構造が格子パターンを成す請求項6記載の半導体装置。
- 前記凹凸構造のパターンが、直線でない請求項6記載の半導体装置。
- 半導体チップ裏面に裏面電極を有する半導体装置において、前記裏面電極と接触するリードフレームの表面に凹凸構造を有する半導体装置。
- 前記凹凸構造がストライプパターンを成す請求項10記載の半導体装置。
- 前記凹凸構造が格子パターンを成す請求項10記載の半導体装置。
- 前記凹凸構造のパターンが、直線でない請求項10記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005118223A JP4836483B2 (ja) | 2005-04-15 | 2005-04-15 | 半導体装置 |
US11/404,934 US7768102B2 (en) | 2005-04-15 | 2006-04-14 | Semiconductor device |
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JP2005118223A JP4836483B2 (ja) | 2005-04-15 | 2005-04-15 | 半導体装置 |
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JP2011119228A Division JP2011171766A (ja) | 2011-05-27 | 2011-05-27 | 半導体装置 |
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JP2006302940A true JP2006302940A (ja) | 2006-11-02 |
JP2006302940A5 JP2006302940A5 (ja) | 2008-03-27 |
JP4836483B2 JP4836483B2 (ja) | 2011-12-14 |
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JP2005118223A Expired - Fee Related JP4836483B2 (ja) | 2005-04-15 | 2005-04-15 | 半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013008771A (ja) * | 2011-06-23 | 2013-01-10 | Nissan Motor Co Ltd | 半導体モジュール |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8552543B2 (en) * | 2006-11-13 | 2013-10-08 | International Rectifier Corporation | Semiconductor package |
US9171804B2 (en) | 2012-11-19 | 2015-10-27 | Infineon Technologies Ag | Method for fabricating an electronic component |
DE102014115770B4 (de) * | 2014-10-30 | 2018-03-29 | Infineon Technologies Ag | Verfahren zur verbindung eines substrats |
US9496193B1 (en) * | 2015-09-18 | 2016-11-15 | Infineon Technologies Ag | Semiconductor chip with structured sidewalls |
US11251152B2 (en) | 2020-03-12 | 2022-02-15 | Diodes Incorporated | Thinned semiconductor chip with edge support |
US11133246B1 (en) * | 2020-03-24 | 2021-09-28 | Vanguard International Semiconductor Corporation | Semiconductor structure employing conductive paste on lead frame |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04293268A (ja) * | 1991-03-22 | 1992-10-16 | Sharp Corp | 半導体装置とその製造方法 |
JPH05198543A (ja) * | 1991-08-23 | 1993-08-06 | Intel Corp | 半導体基板の製造方法および半導体基板 |
JPH0620984A (ja) * | 1992-06-29 | 1994-01-28 | Toyota Motor Corp | 半導体装置の裏面電極形成方法 |
JP2002029057A (ja) * | 2000-07-18 | 2002-01-29 | Casio Comput Co Ltd | インクジェットプリントヘッド |
JP2002192498A (ja) * | 2000-10-09 | 2002-07-10 | Interuniv Micro Electronica Centrum Vzw | マイクロマシンデバイスの製造方法 |
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JP3531613B2 (ja) * | 2001-02-06 | 2004-05-31 | 株式会社デンソー | トレンチゲート型半導体装置及びその製造方法 |
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JPH04293268A (ja) * | 1991-03-22 | 1992-10-16 | Sharp Corp | 半導体装置とその製造方法 |
JPH05198543A (ja) * | 1991-08-23 | 1993-08-06 | Intel Corp | 半導体基板の製造方法および半導体基板 |
JPH0620984A (ja) * | 1992-06-29 | 1994-01-28 | Toyota Motor Corp | 半導体装置の裏面電極形成方法 |
JP2002029057A (ja) * | 2000-07-18 | 2002-01-29 | Casio Comput Co Ltd | インクジェットプリントヘッド |
JP2002192498A (ja) * | 2000-10-09 | 2002-07-10 | Interuniv Micro Electronica Centrum Vzw | マイクロマシンデバイスの製造方法 |
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JP2013008771A (ja) * | 2011-06-23 | 2013-01-10 | Nissan Motor Co Ltd | 半導体モジュール |
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US20060231934A1 (en) | 2006-10-19 |
JP4836483B2 (ja) | 2011-12-14 |
US7768102B2 (en) | 2010-08-03 |
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