JP2006279031A5 - - Google Patents
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- Publication number
- JP2006279031A5 JP2006279031A5 JP2006054820A JP2006054820A JP2006279031A5 JP 2006279031 A5 JP2006279031 A5 JP 2006279031A5 JP 2006054820 A JP2006054820 A JP 2006054820A JP 2006054820 A JP2006054820 A JP 2006054820A JP 2006279031 A5 JP2006279031 A5 JP 2006279031A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacturing
- semiconductor device
- release layer
- peeling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 42
- 238000005530 etching Methods 0.000 claims 18
- 238000000034 method Methods 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 10
- 239000010409 thin film Substances 0.000 claims 8
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000007664 blowing Methods 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000000608 laser ablation Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006054820A JP5025145B2 (ja) | 2005-03-01 | 2006-03-01 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005056308 | 2005-03-01 | ||
| JP2005056308 | 2005-03-01 | ||
| JP2006054820A JP5025145B2 (ja) | 2005-03-01 | 2006-03-01 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006279031A JP2006279031A (ja) | 2006-10-12 |
| JP2006279031A5 true JP2006279031A5 (https=) | 2009-02-05 |
| JP5025145B2 JP5025145B2 (ja) | 2012-09-12 |
Family
ID=37213392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006054820A Expired - Fee Related JP5025145B2 (ja) | 2005-03-01 | 2006-03-01 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5025145B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2995445B1 (fr) * | 2012-09-07 | 2016-01-08 | Soitec Silicon On Insulator | Procede de fabrication d'une structure en vue d'une separation ulterieure |
| TWI642094B (zh) | 2013-08-06 | 2018-11-21 | 半導體能源研究所股份有限公司 | 剝離方法 |
| US10259207B2 (en) | 2016-01-26 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming separation starting point and separation method |
| CN107424944B (zh) * | 2017-06-28 | 2022-09-06 | 紫石能源有限公司 | 一种外延层剥离装置及剥离方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2877800B2 (ja) * | 1997-03-27 | 1999-03-31 | キヤノン株式会社 | 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体 |
| TW558743B (en) * | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| JP2004134672A (ja) * | 2002-10-11 | 2004-04-30 | Sony Corp | 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置 |
| JP2004179649A (ja) * | 2002-11-12 | 2004-06-24 | Sony Corp | 超薄型半導体装置の製造方法および製造装置 |
| JP4748943B2 (ja) * | 2003-02-28 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2006
- 2006-03-01 JP JP2006054820A patent/JP5025145B2/ja not_active Expired - Fee Related
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