JP5025145B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5025145B2
JP5025145B2 JP2006054820A JP2006054820A JP5025145B2 JP 5025145 B2 JP5025145 B2 JP 5025145B2 JP 2006054820 A JP2006054820 A JP 2006054820A JP 2006054820 A JP2006054820 A JP 2006054820A JP 5025145 B2 JP5025145 B2 JP 5025145B2
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Prior art keywords
layer
peeling
peeled
substrate
semiconductor device
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Expired - Fee Related
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JP2006054820A
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Japanese (ja)
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JP2006279031A (ja
JP2006279031A5 (https=
Inventor
栄二 杉山
芳隆 道前
由美子 福本
秀明 桑原
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006054820A priority Critical patent/JP5025145B2/ja
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Publication of JP2006279031A5 publication Critical patent/JP2006279031A5/ja
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JP2006054820A 2005-03-01 2006-03-01 半導体装置の作製方法 Expired - Fee Related JP5025145B2 (ja)

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JP2006054820A JP5025145B2 (ja) 2005-03-01 2006-03-01 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005056308 2005-03-01
JP2005056308 2005-03-01
JP2006054820A JP5025145B2 (ja) 2005-03-01 2006-03-01 半導体装置の作製方法

Publications (3)

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JP2006279031A JP2006279031A (ja) 2006-10-12
JP2006279031A5 JP2006279031A5 (https=) 2009-02-05
JP5025145B2 true JP5025145B2 (ja) 2012-09-12

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JP2006054820A Expired - Fee Related JP5025145B2 (ja) 2005-03-01 2006-03-01 半導体装置の作製方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2995445B1 (fr) * 2012-09-07 2016-01-08 Soitec Silicon On Insulator Procede de fabrication d'une structure en vue d'une separation ulterieure
TWI642094B (zh) 2013-08-06 2018-11-21 半導體能源研究所股份有限公司 剝離方法
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
CN107424944B (zh) * 2017-06-28 2022-09-06 紫石能源有限公司 一种外延层剥离装置及剥离方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2877800B2 (ja) * 1997-03-27 1999-03-31 キヤノン株式会社 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP2004134672A (ja) * 2002-10-11 2004-04-30 Sony Corp 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
JP2004179649A (ja) * 2002-11-12 2004-06-24 Sony Corp 超薄型半導体装置の製造方法および製造装置
JP4748943B2 (ja) * 2003-02-28 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2006279031A (ja) 2006-10-12

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