JP2006278505A5 - - Google Patents

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Publication number
JP2006278505A5
JP2006278505A5 JP2005092444A JP2005092444A JP2006278505A5 JP 2006278505 A5 JP2006278505 A5 JP 2006278505A5 JP 2005092444 A JP2005092444 A JP 2005092444A JP 2005092444 A JP2005092444 A JP 2005092444A JP 2006278505 A5 JP2006278505 A5 JP 2006278505A5
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JP
Japan
Prior art keywords
carbon nanotube
electron beam
substrate
state
irradiation
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JP2005092444A
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English (en)
Japanese (ja)
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JP2006278505A (ja
JP4627206B2 (ja
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Priority to JP2005092444A priority Critical patent/JP4627206B2/ja
Priority claimed from JP2005092444A external-priority patent/JP4627206B2/ja
Publication of JP2006278505A publication Critical patent/JP2006278505A/ja
Publication of JP2006278505A5 publication Critical patent/JP2006278505A5/ja
Application granted granted Critical
Publication of JP4627206B2 publication Critical patent/JP4627206B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005092444A 2005-03-28 2005-03-28 ナノチューブトランジスタの製造方法 Expired - Fee Related JP4627206B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005092444A JP4627206B2 (ja) 2005-03-28 2005-03-28 ナノチューブトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005092444A JP4627206B2 (ja) 2005-03-28 2005-03-28 ナノチューブトランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2006278505A JP2006278505A (ja) 2006-10-12
JP2006278505A5 true JP2006278505A5 (enExample) 2007-03-15
JP4627206B2 JP4627206B2 (ja) 2011-02-09

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ID=37212983

Family Applications (1)

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JP2005092444A Expired - Fee Related JP4627206B2 (ja) 2005-03-28 2005-03-28 ナノチューブトランジスタの製造方法

Country Status (1)

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JP (1) JP4627206B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877690B1 (ko) 2006-12-05 2009-01-08 한국전자통신연구원 나노 와이어 배열 소자 제조방법
US7846786B2 (en) 2006-12-05 2010-12-07 Korea University Industrial & Academic Collaboration Foundation Method of fabricating nano-wire array
JP4666270B2 (ja) * 2006-12-18 2011-04-06 日本電気株式会社 半導体装置及びその製造方法
JP4988369B2 (ja) * 2007-02-05 2012-08-01 日本電信電話株式会社 カーボンナノチューブトランジスタの製造方法
JP4737473B2 (ja) * 2007-04-16 2011-08-03 日本電気株式会社 半導体装置及びその製造方法
US9174847B2 (en) 2008-05-01 2015-11-03 Honda Motor Co., Ltd. Synthesis of high quality carbon single-walled nanotubes
CN108023016B (zh) * 2016-10-31 2020-07-10 清华大学 薄膜晶体管的制备方法
CN108017048B (zh) * 2016-10-31 2020-01-07 清华大学 半导体层的制备方法
CN108020573B (zh) * 2016-10-31 2019-12-17 清华大学 区分碳纳米管类型的方法
CN113130620B (zh) * 2020-01-15 2023-07-18 清华大学 场效应晶体管

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004347532A (ja) * 2003-05-23 2004-12-09 Japan Science & Technology Agency バイオセンサー
US20050036905A1 (en) * 2003-08-12 2005-02-17 Matsushita Electric Works, Ltd. Defect controlled nanotube sensor and method of production
EP1508926A1 (en) * 2003-08-19 2005-02-23 Hitachi, Ltd. Nanotube transistor device

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