JP2006261664A5 - - Google Patents

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Publication number
JP2006261664A5
JP2006261664A5 JP2006064769A JP2006064769A JP2006261664A5 JP 2006261664 A5 JP2006261664 A5 JP 2006261664A5 JP 2006064769 A JP2006064769 A JP 2006064769A JP 2006064769 A JP2006064769 A JP 2006064769A JP 2006261664 A5 JP2006261664 A5 JP 2006261664A5
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JP
Japan
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JP2006064769A
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JP2006261664A (ja
JP5137169B2 (ja
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Priority claimed from US11/203,563 external-priority patent/US8461628B2/en
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Publication of JP2006261664A publication Critical patent/JP2006261664A/ja
Publication of JP2006261664A5 publication Critical patent/JP2006261664A5/ja
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Publication of JP5137169B2 publication Critical patent/JP5137169B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006064769A 2005-03-18 2006-03-09 レーザパターニングされた金属ゲートを備えるｍｏｓトランジスタを形成するための方法 Expired - Fee Related JP5137169B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US66329605P 2005-03-18 2005-03-18
US60/663,296 2005-03-18
US11/203,563 US8461628B2 (en) 2005-03-18 2005-08-11 MOS transistor with laser-patterned metal gate, and method for making the same
US11/203,563 2005-08-11

Publications (3)

Publication Number Publication Date
JP2006261664A JP2006261664A (ja) 2006-09-28
JP2006261664A5 true JP2006261664A5 (ja) 2008-01-17
JP5137169B2 JP5137169B2 (ja) 2013-02-06

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JP2006064769A Expired - Fee Related JP5137169B2 (ja) 2005-03-18 2006-03-09 レーザパターニングされた金属ゲートを備えるｍｏｓトランジスタを形成するための方法

Country Status (4)

Country Link
US (1) US8461628B2 (ja)
JP (1) JP5137169B2 (ja)
KR (1) KR100964283B1 (ja)
TW (1) TWI309438B (ja)

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