JP2006248795A5 - - Google Patents
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- Publication number
- JP2006248795A5 JP2006248795A5 JP2005063547A JP2005063547A JP2006248795A5 JP 2006248795 A5 JP2006248795 A5 JP 2006248795A5 JP 2005063547 A JP2005063547 A JP 2005063547A JP 2005063547 A JP2005063547 A JP 2005063547A JP 2006248795 A5 JP2006248795 A5 JP 2006248795A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- iii nitride
- single crystal
- nitride single
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 238000010304 firing Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 238000002109 crystal growth method Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005063547A JP4678212B2 (ja) | 2005-03-08 | 2005-03-08 | Ｉｉｉ族窒化物単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005063547A JP4678212B2 (ja) | 2005-03-08 | 2005-03-08 | Ｉｉｉ族窒化物単結晶の成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006248795A JP2006248795A (ja) | 2006-09-21 |
| JP2006248795A5 true JP2006248795A5 (https=) | 2008-02-21 |
| JP4678212B2 JP4678212B2 (ja) | 2011-04-27 |
Family
ID=37089678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005063547A Expired - Fee Related JP4678212B2 (ja) | 2005-03-08 | 2005-03-08 | Ｉｉｉ族窒化物単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4678212B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5929807B2 (ja) * | 2013-03-26 | 2016-06-08 | 三菱化学株式会社 | ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法 |
| JP6187503B2 (ja) * | 2015-02-26 | 2017-08-30 | 株式会社豊田中央研究所 | 金属蒸気供給装置、金属／金属化合物製造装置、ＧａＮ単結晶の製造方法、及びナノ粒子の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4014411B2 (ja) * | 2002-01-18 | 2007-11-28 | 株式会社リコー | Ｉｉｉ族窒化物の結晶製造方法 |
| DE10335538A1 (de) * | 2003-07-31 | 2005-02-24 | Sicrystal Ag | Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand |
-
2005
- 2005-03-08 JP JP2005063547A patent/JP4678212B2/ja not_active Expired - Fee Related
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