JP2006248795A5

JP2006248795A5 -

Info

Publication number: JP2006248795A5
Application number: JP2005063547A
Authority: JP
Filing date: 2005-03-08
Publication date: 2008-02-21
Anticipated expiration: 2025-03-08

Description

本発明にかかるＩＩＩ族窒化物単結晶の成長方法において、上記多孔質体は金属炭化物粉末のプレス焼成法または反応焼成法により形成することができる。また、金属炭化物における金属と炭素との元素組成比である（金属）：（炭素）を９：１〜４：６とすることができる。また、金属炭化物をＴａＣまたはＴａＣを含む複合炭化物とすることができる。また、金属炭化物の不純物含有量を５００ｐｐｍ以下とすることができる。また、結晶成長容器の内部の原料ガスの１％以上５０％以下を多孔質体の気孔を介して結晶成長容器の外部に排出することができる。さらに、結晶成長容器は、金属炭化物で形成されている気孔率が０．１％以上７０％以下の多孔質体の表面の少なくとも一部に、金属炭化物で形成されている気孔率が０．１％未満のコーティング層で被覆されているものとすることができる。また、このコーティング層は金属炭化物粉末のプレス焼成法または反応焼成法により形成することができる。 In the group III nitride single crystal growth method according to the present invention, the porous body can be formed by a press firing method or a reaction firing method of metal carbide powder. Moreover, (metal) :( carbon) which is an elemental composition ratio of the metal and carbon in a metal carbide can be set to 9: 1 to 4: 6. Further, the metal carbide can be TaC or a composite carbide containing TaC. Moreover, the impurity content of the metal carbide can be 500 ppm or less. Further, 1% or more and 50% or less of the raw material gas inside the crystal growth vessel can be discharged to the outside of the crystal growth vessel through the pores of the porous body. Further, the crystal growth vessel has a porosity formed of metal carbide of at least part of the surface of the porous body formed of metal carbide and having a porosity of 0.1% to 70%. % Of the coating layer. The coating layer can be formed by a press firing method or a reaction firing method of metal carbide powder.

Claims

A method of growing a group III nitride single crystal inside a crystal growth vessel,
A method for growing a group III nitride single crystal, wherein a porous body made of metal carbide and having a porosity of 0.1% to 70% is used in at least a part of the crystal growth vessel.

2. The method for growing a group III nitride single crystal according to claim 1, wherein the porous body is formed by a reaction firing method or a press firing method of a metal carbide powder .

The group III nitride single crystal growth according to claim 1 or 2 , wherein (metal) :( carbon), which is an elemental composition ratio of metal to carbon in the metal carbide, is 9: 1 to 4: 6. Method.

The method for growing a group III nitride single crystal according to any one of claims 1 to 3, wherein the metal carbide is TaC or a composite carbide containing TaC.

The method for growing a group III nitride single crystal according to any one of claims 1 to 4 , wherein an impurity content of the metal carbide is 500 ppm or less.

Less than 50% 1% of the raw material gas inside of the crystal growth vessel, any of claims 1 to 5, characterized in that discharging through pores of the porous body to the outside of the crystal growth vessel A method for growing a group III nitride single crystal according to claim 1.

In the crystal growth vessel, the porosity formed of the metal carbide is 0 on at least a part of the surface of the porous body formed of the metal carbide and having a porosity of 0.1% to 70%. The method for growing a group III nitride single crystal according to any one of claims 1 to 6 , which is coated with a coating layer of less than 1%.

8. The method for growing a group III nitride single crystal according to claim 7, wherein the coating layer is formed by a reaction firing method or a press firing method of metal carbide powder .

A group III nitride single crystal obtained by the method for growing a group III nitride single crystal according to any one of claims 1 to 8 ,
A group III nitride single crystal having a diameter of 2.5 cm or more and a thickness of 200 μm or more.