JP4678212B2 - Ｉｉｉ族窒化物単結晶の成長方法 - Google Patents

Ｉｉｉ族窒化物単結晶の成長方法 Download PDF

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Publication number
JP4678212B2
JP4678212B2 JP2005063547A JP2005063547A JP4678212B2 JP 4678212 B2 JP4678212 B2 JP 4678212B2 JP 2005063547 A JP2005063547 A JP 2005063547A JP 2005063547 A JP2005063547 A JP 2005063547A JP 4678212 B2 JP4678212 B2 JP 4678212B2
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single crystal
crystal growth
group iii
iii nitride
nitride single
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Japanese (ja)
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JP2006248795A (ja
JP2006248795A5 (https=
Inventor
倫正 宮永
奈保 水原
伸介 藤原
成二 中畑
英章 中幡
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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JP2005063547A 2005-03-08 2005-03-08 Ｉｉｉ族窒化物単結晶の成長方法 Expired - Fee Related JP4678212B2 (ja)

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JP2005063547A JP4678212B2 (ja) 2005-03-08 2005-03-08 Ｉｉｉ族窒化物単結晶の成長方法

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JP2006248795A JP2006248795A (ja) 2006-09-21
JP2006248795A5 JP2006248795A5 (https=) 2008-02-21
JP4678212B2 true JP4678212B2 (ja) 2011-04-27

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5929807B2 (ja) * 2013-03-26 2016-06-08 三菱化学株式会社 ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法
JP6187503B2 (ja) * 2015-02-26 2017-08-30 株式会社豊田中央研究所 金属蒸気供給装置、金属／金属化合物製造装置、ＧａＮ単結晶の製造方法、及びナノ粒子の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4014411B2 (ja) * 2002-01-18 2007-11-28 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
DE10335538A1 (de) * 2003-07-31 2005-02-24 Sicrystal Ag Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand

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