JP2006245242A - Method for manufacturing semiconductor device - Google Patents
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- JP2006245242A JP2006245242A JP2005058035A JP2005058035A JP2006245242A JP 2006245242 A JP2006245242 A JP 2006245242A JP 2005058035 A JP2005058035 A JP 2005058035A JP 2005058035 A JP2005058035 A JP 2005058035A JP 2006245242 A JP2006245242 A JP 2006245242A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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Abstract
Description
本発明は、半導体装置の製造方法に関する。 The present invention relates to a method for manufacturing a semiconductor device.
最近の半導体装置の高機能化、軽薄短小化に伴い、半導体素子をフェイスダウン構造で配線回路基板に搭載するフリップチップボンディングが行われている。一般にフリップチップボンディングにおいては、半導体素子を保護するために半導体素子と配線回路基板の空隙を熱硬化性液状樹脂で封止している。 2. Description of the Related Art Along with the recent enhancement of functionality and lightness and thinness of semiconductor devices, flip chip bonding has been performed in which semiconductor elements are mounted on a printed circuit board with a face-down structure. Generally, in flip chip bonding, a gap between a semiconductor element and a printed circuit board is sealed with a thermosetting liquid resin in order to protect the semiconductor element.
従来のフリップチップボンディングはウエハ上にパターンを作製し、バンプを形成した後、個々の半導体素子に切断し、半導体素子を配線回路基板へ搭載して、その空隙を熱硬化性液状樹脂で封止を行っていた。従って、個々の半導体装置に対して封止用の液状樹脂を供給する必要があり、半導体装置の製造に長時間を要していた。 In conventional flip chip bonding, a pattern is formed on a wafer, bumps are formed, individual semiconductor elements are cut, the semiconductor elements are mounted on a printed circuit board, and the voids are sealed with a thermosetting liquid resin. Had gone. Accordingly, it is necessary to supply a liquid resin for sealing to each semiconductor device, and it takes a long time to manufacture the semiconductor device.
一方、半導体装置の生産性の向上を図るため、ウエハ上にパターンを作製し、バンプを形成後、接着剤（樹脂組成物）をパターン面に供給した後に個々の半導体素子に切断し、半導体素子を配線回路基板に搭載する方式（以下、アンダーフィル方式と称す）が検討されている。 On the other hand, in order to improve the productivity of semiconductor devices, a pattern is formed on a wafer, bumps are formed, an adhesive (resin composition) is supplied to the pattern surface, and then cut into individual semiconductor elements. A method (hereinafter referred to as an underfill method) in which the circuit board is mounted on a printed circuit board has been studied.
このようなアンダーフィル方式では、作業性の点からシート状の樹脂組成物をウエハのパターン面に供給する方式が検討されているが（例えば、特許文献１参照）、該パターン面は凹凸を有するため、気泡なくシート状の樹脂組成物を貼ることは困難であった。 In such an underfill method, a method of supplying a sheet-shaped resin composition to the pattern surface of a wafer has been studied from the viewpoint of workability (see, for example, Patent Document 1), but the pattern surface has irregularities. Therefore, it is difficult to apply a sheet-like resin composition without bubbles.
従って、このようなパターン面に気泡なくシート状の材料を貼る方法としては、開閉可能な真空密閉容器を用いて高真空下で貼る方法（例えば、特許文献２参照）が一般的に採用されている。
しかし、高真空下でシート状の材料を貼る方法では、密閉容器内を高真空に到達させる必要性があることから、容器サイズを可能な限り小さくする必要がある。よって、密閉容器はウエハが１枚入る程度の大きさである。従って、パターン面にシート状の材料を貼る際には、ウエハ１枚毎に密閉容器の開閉を行い、ウエハ搬送およびシート状の材料の貼付を行う必要があることから、シート状の材料の貼付に長時間を要していた。 However, in the method of sticking a sheet-like material under high vacuum, it is necessary to make the inside of the sealed container reach high vacuum, and therefore the container size needs to be made as small as possible. Therefore, the sealed container is large enough to contain one wafer. Therefore, when a sheet-like material is pasted on the pattern surface, it is necessary to open and close the sealed container for each wafer to carry the wafer and paste the sheet-like material. It took a long time.
本発明は、このような事情に鑑みてなされたものであり、シート状熱硬化性樹脂組成物を用いたアンダーフィル方式において、複数のウエハであっても、気泡の混入およびウエハ損傷をほとんど生じずに処理できる半導体装置の製造方法を提供することを目的とする。 The present invention has been made in view of such circumstances, and in an underfill system using a sheet-like thermosetting resin composition, even if it is a plurality of wafers, almost no air bubbles are mixed and wafer damage occurs. An object of the present invention is to provide a method for manufacturing a semiconductor device that can be processed without any problems.
すなわち、本発明は
〔１〕（１）バンプを有するウエハのパターン面にシート状熱硬化性樹脂組成物を貼り合わせる工程、
（２）耐圧容器内で、該熱硬化性樹脂組成物の軟化点以上の温度で、気体圧縮による加圧を該ウエハに行う工程、
（３）該ウエハをチップに切断する工程、および
（４）該チップを配線回路基板に搭載する工程
を含む、半導体装置の製造方法、ならびに
〔２〕（１）バンプを有するウエハのパターン面にシート状熱硬化性樹脂組成物を貼り合わせる工程、
（２）耐圧容器内で、該熱硬化性樹脂組成物の軟化点以上の温度で、気体圧縮による加圧を該ウエハに行う工程、
（２’）該ウエハの裏面を研削する工程、
（３）該ウエハをチップに切断する工程、および
（４）該チップを配線回路基板に搭載する工程
を含む、半導体装置の製造方法
に関する。
That is, the present invention [1] (1) a step of bonding a sheet-like thermosetting resin composition to the pattern surface of a wafer having bumps,
(2) A step of applying pressure to the wafer by gas compression at a temperature equal to or higher than the softening point of the thermosetting resin composition in a pressure vessel.
(3) a method of manufacturing a semiconductor device, including a step of cutting the wafer into chips, and (4) a step of mounting the chip on a printed circuit board, and [2] (1) a pattern surface of a wafer having bumps A step of bonding the sheet-like thermosetting resin composition;
(2) A step of applying pressure to the wafer by gas compression at a temperature equal to or higher than the softening point of the thermosetting resin composition in a pressure vessel.
(2 ′) a step of grinding the back surface of the wafer;
The present invention relates to a method for manufacturing a semiconductor device, including (3) a step of cutting the wafer into chips, and (4) a step of mounting the chip on a printed circuit board.
本発明により、複数のウエハであっても、気泡の混入およびウエハ損傷をほとんど生じずに処理できる半導体装置の製造方法を提供することができる。 According to the present invention, it is possible to provide a method for manufacturing a semiconductor device that can process even a plurality of wafers with little bubble mixing and wafer damage.
本発明の半導体装置の製造方法は、
（１）バンプを有するウエハのパターン面にシート状熱硬化性樹脂組成物を貼り合わせる工程、
（２）耐圧容器内で、該熱硬化性樹脂組成物の軟化点以上の温度で、気体圧縮による加圧を該ウエハに行う工程、
（３）該ウエハをチップに切断する工程、および
（４）該チップを配線回路基板に搭載する工程
を含むことを一つの特徴とする。
A method for manufacturing a semiconductor device of the present invention includes:
(1) A step of bonding a sheet-like thermosetting resin composition to a pattern surface of a wafer having bumps,
(2) A step of applying pressure to the wafer by gas compression at a temperature equal to or higher than the softening point of the thermosetting resin composition in a pressure vessel.
One feature is that the method includes (3) cutting the wafer into chips, and (4) mounting the chip on a printed circuit board.
かかる特徴を有することにより、バンプを有するウエハのパターン面にシート状熱硬化性樹脂組成物を貼り合わせた際、またはシート状熱硬化性樹脂組成物を調製した際に、シート状熱硬化性樹脂組成物の内部またはシート状熱硬化性樹脂組成物とウエハの界面に混入してしまった気泡を容易に除去することができ、また、従来の高真空下での貼付方法と比較し、複数の熱硬化性樹脂組成物付ウエハを一括して脱泡処理することができるため、半導体装置の生産性向上が可能となる。なお、本発明における気泡の除去とは、気泡をシート状熱硬化性樹脂組成物の内部またはシート状熱硬化性樹脂組成物とウエハの界面から外部環境に出すだけではなく、気泡を樹脂中に溶解・吸収させて消失させることも包含するものであり、光学顕微鏡にて観察して存在が実質的に確認できないレベルまで消失することを意味するものである。 By having such characteristics, when the sheet-like thermosetting resin composition is bonded to the pattern surface of the wafer having bumps, or when the sheet-like thermosetting resin composition is prepared, the sheet-like thermosetting resin is used. Air bubbles mixed in the interior of the composition or at the interface between the sheet-like thermosetting resin composition and the wafer can be easily removed, and more than a conventional high-vacuum application method, Since the defoaming treatment can be performed on the wafer with the thermosetting resin composition at once, the productivity of the semiconductor device can be improved. The removal of bubbles in the present invention means not only that bubbles are discharged from the inside of the sheet-like thermosetting resin composition or the interface between the sheet-like thermosetting resin composition and the wafer to the external environment, but also the bubbles are introduced into the resin. It also includes dissolution and absorption and disappearance, which means disappearance to a level at which the presence cannot be substantially confirmed by observation with an optical microscope.
以下、図１〜５を参照しつつ本発明の半導体装置の製造方法の一態様を説明する。 Hereinafter, an embodiment of a method for manufacturing a semiconductor device of the present invention will be described with reference to FIGS.
本発明の製造方法における工程（１）の一態様を図１に示す。図１において、基材シート４とシート状熱硬化性樹脂組成物１とからなる樹脂シートを、バンプ３が該樹脂組成物１に埋め込まれるようにウエハ２のパターン面に貼り合わせている。 One mode of the step (1) in the production method of the present invention is shown in FIG. In FIG. 1, a resin sheet composed of a base sheet 4 and a sheet-like thermosetting resin composition 1 is bonded to a pattern surface of a wafer 2 so that bumps 3 are embedded in the resin composition 1.
工程（１）において、シート状熱硬化性樹脂組成物とウエハ２とを貼り合わせる際に、シート状熱硬化性樹脂組成物１の内部またはシート状熱硬化性樹脂組成物１とウエハ２の界面に気泡５が混入する場合があるが、このような気泡５は工程（２）において除去することができる。 In the step (1), when the sheet-like thermosetting resin composition and the wafer 2 are bonded together, the inside of the sheet-like thermosetting resin composition 1 or the interface between the sheet-like thermosetting resin composition 1 and the wafer 2. In some cases, bubbles 5 may be mixed in, but such bubbles 5 can be removed in step (2).
シート状熱硬化性樹脂組成物１は、熱硬化性を有し、シート状に加工できる樹脂組成物であれば特に限定されない。空隙への充填性および電極接合性の観点からは、軟化点が10〜100℃である樹脂組成物が好ましい。該樹脂組成物としては、例えば、熱硬化性樹脂、硬化剤、熱可塑性樹脂、硬化促進剤、フラックス活性剤、無機充填剤およびその他の添加剤を含有する樹脂組成物が挙げられる。なお、軟化点は後述の実施例に記載の方法により測定することができる。 The sheet-like thermosetting resin composition 1 is not particularly limited as long as it has a thermosetting property and can be processed into a sheet shape. A resin composition having a softening point of 10 to 100 ° C. is preferable from the viewpoints of filling into voids and electrode bondability. Examples of the resin composition include a resin composition containing a thermosetting resin, a curing agent, a thermoplastic resin, a curing accelerator, a flux activator, an inorganic filler, and other additives. In addition, a softening point can be measured by the method as described in the below-mentioned Example.
熱硬化性樹脂としては、例えば、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、イソシアネート化合物、ベンゾオキサジン環化合物などが挙げられるが、中でも、耐熱性および電気絶縁性の観点から、エポキシ樹脂が好ましい。 Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, an isocyanate compound, a benzoxazine ring compound, and among them, an epoxy resin is preferable from the viewpoint of heat resistance and electrical insulation.
エポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂；ビスフェノールF型エポキシ樹脂；フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂などのノボラック型エポキシ樹脂；脂環式エポキシ樹脂；トリグリシジルイソシアヌレート；ヒダントインエポキシ樹脂等の含窒素環エポキシ樹脂；水添加ビスフェノールA型エポキシ樹脂；脂肪族系エポキシ樹脂；グリシジルエーテル型エポキシ樹脂；ビスフェノールS型エポキシ樹脂；低給水率硬化体タイプの主流であるビフェニル型エポキシ樹脂；ジシクロ環型エポキシ樹脂；ナフタレン型エポキシ樹脂などが挙げられる。これらは、単独で使用されてもよく、２種以上併用されてもよい。 Examples of the epoxy resin include bisphenol A type epoxy resin; bisphenol F type epoxy resin; novolak type epoxy resin such as phenol novolac type epoxy resin and cresol novolak type epoxy resin; alicyclic epoxy resin; triglycidyl isocyanurate; Nitrogen-containing ring epoxy resin such as resin; Water-added bisphenol A type epoxy resin; Aliphatic epoxy resin; Glycidyl ether type epoxy resin; Bisphenol S type epoxy resin; Biphenyl type epoxy resin which is the mainstream of low water supply rate cured body type; Examples include dicyclo ring type epoxy resins; naphthalene type epoxy resins. These may be used alone or in combination of two or more.
上記エポキシ樹脂は、常温で固形でも液状でもよいが、樹脂組成物の硬化体の機械的強度およびガラス転移温度の制御の容易性の観点から、一般にエポキシ当量が好ましくは90〜1000g/eqのものである。樹脂組成物中のエポキシ樹脂の含有量は、耐熱性および耐湿性の観点から、5〜90重量％が好ましく、10〜80重量％がより好ましい。 The epoxy resin may be solid or liquid at room temperature, but generally has an epoxy equivalent of preferably 90 to 1000 g / eq from the viewpoint of easy control of the mechanical strength and glass transition temperature of the cured product of the resin composition. It is. The content of the epoxy resin in the resin composition is preferably 5 to 90% by weight, more preferably 10 to 80% by weight, from the viewpoint of heat resistance and moisture resistance.
硬化剤としては、例えば、熱硬化性樹脂がエポキシ樹脂の場合、エポキシ基と架橋反応するものであれば特に限定されず、各種の硬化剤が用いられる。耐湿信頼性に優れる点で、フェノール系硬化剤が一般に用いられるが、各種酸無水物系硬化剤、芳香族アミン類、ジシアンジアミド、ヒドラジド、ベンゾオキサジン環化合物などを使用することもできる。これらは、単独で使用されてもよく、２種以上併用されてもよい。 For example, when the thermosetting resin is an epoxy resin, the curing agent is not particularly limited as long as it undergoes a crosslinking reaction with an epoxy group, and various curing agents are used. A phenolic curing agent is generally used in terms of excellent moisture resistance reliability, but various acid anhydride curing agents, aromatic amines, dicyandiamide, hydrazide, benzoxazine ring compounds, and the like can also be used. These may be used alone or in combination of two or more.
フェノール系硬化剤としては、例えば、キシリレン型フェノール樹脂、クレゾールノボラック樹脂、フェノールノボラック樹脂、ジシクロペンタジエン環型フェノール樹脂、フェノールアラルキル樹脂、ナフトールなどが挙げられる。これらは、単独で使用されてもよく、２種以上併用されてもよい。 Examples of the phenolic curing agent include xylylene type phenol resin, cresol novolac resin, phenol novolac resin, dicyclopentadiene ring type phenol resin, phenol aralkyl resin, naphthol and the like. These may be used alone or in combination of two or more.
熱硬化性樹脂がエポキシ樹脂の場合、エポキシ樹脂と硬化剤との配合割合は、硬化剤としてフェノール系硬化剤を用いる場合、硬化性、耐熱性、耐湿信頼性の確保の観点から、エポキシ樹脂中のエポキシ当量1g/eqに対して、フェノール系硬化剤における反応性の水酸基当量が好ましくは0.5〜1.5g/eq、より好ましくは0.7〜1.2g/eqとなるような割合であるのが好ましい。なお、フェノール系硬化剤以外の硬化剤を使用する場合においても、その配合割合は、フェノール系硬化剤を用いる場合の配合割合（当量比）に準じればよい。 When the thermosetting resin is an epoxy resin, the blending ratio of the epoxy resin and the curing agent is, in the case of using a phenolic curing agent as the curing agent, from the viewpoint of securing curability, heat resistance, and moisture resistance reliability. It is preferable that the reactive hydroxyl equivalent in the phenolic curing agent is preferably 0.5 to 1.5 g / eq, more preferably 0.7 to 1.2 g / eq with respect to the epoxy equivalent of 1 g / eq. In addition, also when using hardening | curing agents other than a phenol type hardening | curing agent, the mixture ratio should just follow the mixing | blending ratio (equivalent ratio) in the case of using a phenol type hardening | curing agent.
熱可塑性樹脂としては、例えば、アクリル酸アルキルエステル共重合体、グリシジル変性アクリル酸アルキルエステル共重合体、カルボキシル変性アクリル酸アルキルエステル共重合体、シリコーン変性アクリル酸アルキルエステル共重合体などの各種アクリル酸アルキルエステル共重合体の変性物、アクリロニトリル−ブタジエン共重合体、カルボキシル変性アクリロニトリル−ブタジエン共重合体、水添アクリロニトリル−ブタジエン共重合体、スチレン−ブタジエン−スチレン共重合体、エポキシ変性スチレン−ブタジエン−スチレン共重合体などが挙げられる。 Examples of the thermoplastic resin include various acrylic acids such as an acrylic acid alkyl ester copolymer, a glycidyl-modified acrylic acid alkyl ester copolymer, a carboxyl-modified acrylic acid alkyl ester copolymer, and a silicone-modified acrylic acid alkyl ester copolymer. Modified alkyl ester copolymer, acrylonitrile-butadiene copolymer, carboxyl-modified acrylonitrile-butadiene copolymer, hydrogenated acrylonitrile-butadiene copolymer, styrene-butadiene-styrene copolymer, epoxy-modified styrene-butadiene-styrene A copolymer etc. are mentioned.
熱可塑性樹脂の含有量は、樹脂組成物のシート化が可能であれば特に限定されないが、ウエハ貼り合わせ性、切断加工性、チップ実装性の確保の観点から、好ましくは1〜50重量％、より好ましくは3〜30重量％である。これらは、単独で使用されてもよく、２種以上併用されてもよい。 The content of the thermoplastic resin is not particularly limited as long as the resin composition can be made into a sheet, but from the viewpoint of securing wafer bonding property, cutting workability, and chip mounting property, preferably 1 to 50% by weight, More preferably, it is 3 to 30% by weight. These may be used alone or in combination of two or more.
硬化促進剤としては、熱硬化性樹脂の硬化促進剤として公知の各種の硬化促進剤が用いられ、例えば、アミン系硬化促進剤、イミダゾール系硬化促進剤、トリフェニルホスフィン等のリン系硬化促進剤、ホウ素系硬化促進剤、リン−ホウ素系硬化促進剤などが挙げられる。また、該硬化促進剤をマイクロカプセルに封入したものからなるマイクロカプセル型硬化促進剤（例えば、特開２０００−３０９６８２号公報を参照のこと）、ジシアンジアミド、アミンアダクト、ヒドラジドなどの潜在性硬化触媒はより好適に用いられる。これらは、単独で使用されてもよく、２種以上併用されてもよい。 As the curing accelerator, various known curing accelerators are used as curing accelerators for thermosetting resins. For example, phosphorus-based curing accelerators such as amine-based curing accelerators, imidazole-based curing accelerators, and triphenylphosphine. , Boron-based curing accelerators, phosphorus-boron-based curing accelerators, and the like. In addition, a latent curing catalyst such as a microcapsule type curing accelerator comprising the curing accelerator encapsulated in a microcapsule (see, for example, JP 2000-309682 A), dicyandiamide, amine adduct, hydrazide, etc. More preferably used. These may be used alone or in combination of two or more.
硬化促進剤の含有量は、所望の硬化速度が得られるような割合で、適宜設定すればよい。設定方法としては、例えば、種々の量の硬化促進剤を含有する樹脂組成物の熱板上でのゲル化時間（硬化速度の指標）を測定し、所望のゲル化時間が得られた量をその含有量とする方法が挙げられる。一般に、硬化剤100重量部に対して、好ましくは0.1〜20重量部である。 What is necessary is just to set content of a hardening accelerator suitably in the ratio that a desired hardening rate is obtained. As a setting method, for example, the gelation time (an index of the curing rate) of the resin composition containing various amounts of the curing accelerator on the hot plate is measured, and the amount of the desired gelation time is obtained. The method of making it the content is mentioned. In general, the amount is preferably 0.1 to 20 parts by weight with respect to 100 parts by weight of the curing agent.
フラックス活性剤とは、プロトンを有する酸性物質であって、金属酸化物の酸化膜を除去するという性質を有する物質をいい、その具体例としては、例えば、吉草酸、ラウリン酸、ステアリン酸などの脂肪族モノカルボン酸、コハク酸、アジピン酸、セバシン酸、1,10-ドデカンジカルボン酸などの脂肪族ジカルボン酸、安息香酸、フタル酸、1,2,4-トリメリット酸、ピメリン酸などの芳香族カルボン酸、ロジン誘導体などが挙げられる。あるいは、かかる有機カルボン酸とビニルエーテル化合物との反応によって生成される下記一般式（１）： The flux activator is an acidic substance having protons and has a property of removing an oxide film of a metal oxide, and specific examples thereof include, for example, valeric acid, lauric acid, stearic acid and the like. Aliphatic dicarboxylic acids such as aliphatic monocarboxylic acid, succinic acid, adipic acid, sebacic acid, 1,10-dodecanedicarboxylic acid, fragrances such as benzoic acid, phthalic acid, 1,2,4-trimellitic acid, pimelic acid Group carboxylic acids, rosin derivatives and the like. Or the following general formula (1) produced | generated by reaction of this organic carboxylic acid and a vinyl ether compound:
で表される化学結合を有する化合物が用いられてもよい。ビニルエーテル化合物としては、１分子中に１個以上のビニルエーテル基を有する化合物であれば特に限定されないが、例えば、n-プロピルビニルエーテル、イソプロピルビニルエーテル、2-エチルヘキシルビニルエーテル、シクロヘキサンジメタノールジビニルエーテルなどが挙げられる。エポキシ樹脂を熱硬化性樹脂として、上記化学結合を有する化合物をフラックス活性剤として用いる場合、所望とする温度以上で熱解離してカルボキシル基を生じ、エポキシ樹脂と反応し、ポットライフおよびハンダ接合性をさらに向上させることができるので好適に使用される。これらは、単独で使用されてもよく、２種以上併用されてもよい。 A compound having a chemical bond represented by: The vinyl ether compound is not particularly limited as long as it is a compound having one or more vinyl ether groups in one molecule, and examples thereof include n-propyl vinyl ether, isopropyl vinyl ether, 2-ethylhexyl vinyl ether, cyclohexane dimethanol divinyl ether, and the like. . When an epoxy resin is used as a thermosetting resin and a compound having the above chemical bond is used as a flux activator, it thermally dissociates at a temperature higher than a desired temperature to generate a carboxyl group, reacts with the epoxy resin, and pot life and solder bonding properties Can be further improved. These may be used alone or in combination of two or more.
フラックス活性剤の含有量は、耐熱性およびハンダ接合性の観点から、樹脂組成物中、好ましくは0.5〜10重量％、より好ましくは1〜5重量％である。 The content of the flux activator is preferably 0.5 to 10% by weight, more preferably 1 to 5% by weight in the resin composition from the viewpoint of heat resistance and solderability.
無機充填剤としては、球状シリカ、破砕シリカ、シリカ−チタニア複合粒子、シリカ−ゲルマニウム複合微粒子、金粒子、銀粒子、ニッケル粒子などの導電粒子、金メッキにより被覆されたアクリル粒子などの導電金属被覆有機ポリマーなどが挙げられる。中でも、熱硬化性樹脂組成物の透明性付与、耐湿性の観点からシリカ−チタニア複合粒子が好適に用いられる。これらは、単独で使用されてもよく、２種以上併用されてもよい。無機充填剤の含有量は、所望の効果が得られる範囲で適宜調整すればよい。 Inorganic fillers include conductive metal-coated organic materials such as spherical silica, crushed silica, silica-titania composite particles, silica-germanium composite particles, gold particles, silver particles, nickel particles, and acrylic particles coated by gold plating. Examples thereof include polymers. Among these, silica-titania composite particles are preferably used from the viewpoint of imparting transparency of the thermosetting resin composition and moisture resistance. These may be used alone or in combination of two or more. What is necessary is just to adjust suitably content of an inorganic filler in the range with which a desired effect is acquired.
添加剤としては、シランカップリング剤、チタンカップリング剤、表面調整剤、酸化防止剤、粘着付与剤、シリコンオイルおよびシリコンゴム、合成ゴム反応性希釈剤など低応力化を図るための添加剤、ハイドロタルサイト類、水酸化ビスマスのイオントラップ剤など耐湿信頼性を向上するための添加剤が挙げられる。これらは、単独で使用されてもよく、２種以上併用されてもよい。これらの添加剤の含有量は、各添加剤の所望の効果が得られる範囲で適宜調整すればよい。 Additives such as silane coupling agents, titanium coupling agents, surface conditioners, antioxidants, tackifiers, silicone oils and silicone rubbers, additives for reducing stress, such as synthetic rubber reactive diluents, Additives for improving moisture resistance reliability, such as hydrotalcites and ion trapping agents for bismuth hydroxide. These may be used alone or in combination of two or more. What is necessary is just to adjust suitably content of these additives in the range in which the desired effect of each additive is acquired.
シート状熱硬化性樹脂組成物１は、例えば、以下のようにして調製することができる。すなわち、熱硬化性樹脂、硬化剤、熱可塑性樹脂、硬化促進剤、フラックス活性剤などを所定量配合し、トルエン、メチルエチルケトン、酢酸エチルなどの有機溶剤に混合溶解し、この混合溶液を、所定のシリコーン樹脂、フッ素樹脂などで離型処理したポリエステルシートなどの基材シート４上に塗布する。次に、該基材シート４を80〜150℃程度での乾燥工程に供し、該基材シート４上にシート状熱硬化性樹脂組成物１を製造することができる。また、該シート状樹脂組成物１をポリオレフィン系シート（例えば、エチレンビニルアセテートシート）などにロールラミネーターを用いて転写してシート状熱硬化性樹脂組成物を製造してもよい。 The sheet-like thermosetting resin composition 1 can be prepared as follows, for example. That is, a predetermined amount of a thermosetting resin, a curing agent, a thermoplastic resin, a curing accelerator, a flux activator, and the like are blended and dissolved in an organic solvent such as toluene, methyl ethyl ketone, and ethyl acetate. It applies | coats on base-material sheets 4, such as a polyester sheet which carried out mold release process with silicone resin, a fluororesin, etc. Next, the base sheet 4 is subjected to a drying process at about 80 to 150 ° C., and the sheet-like thermosetting resin composition 1 can be produced on the base sheet 4. Alternatively, the sheet-like resin composition 1 may be transferred to a polyolefin-based sheet (for example, ethylene vinyl acetate sheet) using a roll laminator to produce a sheet-like thermosetting resin composition.
シート状熱硬化性樹脂組成物を調製する際に、シート状熱硬化性樹脂組成物の内部に気泡が混入する場合があるが、このような気泡は工程（２）において除去することができる。 When preparing a sheet-like thermosetting resin composition, bubbles may be mixed inside the sheet-like thermosetting resin composition, but such bubbles can be removed in the step (2).
バンプ３としては、特に限定はされないが、例えば、ハンダによる低融点および高融点バンプ、錫バンプ、銀−錫バンプ、銀−錫−銅バンプ、金バンプ、銅バンプなどが挙げられる。 The bump 3 is not particularly limited, and examples thereof include low melting point and high melting point bumps by solder, tin bumps, silver-tin bumps, silver-tin-copper bumps, gold bumps, and copper bumps.
ウエハ２は、特に限定されず、通常使用されるものが使用できる。例えば、シリコン、ゲルマニウムなどの元素半導体ウエハ、ガリウムヒ素、インジウムリンなどの化合物半導体ウエハなどの各種の半導体ウエハが使用される。 The wafer 2 is not particularly limited, and a commonly used wafer 2 can be used. For example, various semiconductor wafers such as elemental semiconductor wafers such as silicon and germanium, and compound semiconductor wafers such as gallium arsenide and indium phosphide are used.
ウエハ２とシート状熱硬化性樹脂組成物との貼り合わせには、汎用性および生産性の観点から、ロール圧着方式が好適に用いられる。貼り合わせ温度は、常温で行ってもよいが、熱硬化性樹脂組成物の流動性の観点から、該樹脂組成物の軟化点以上で硬化反応開始温度以下が好ましい。その温度範囲は、樹脂組成物の組成によって適宜選択されるが、通常、30〜150℃である。樹脂組成物の軟化点以上の温度で貼り合わせを行う場合、バンプを該熱硬化性樹脂に十分に埋め込むことができ、また、樹脂組成物の反応開始温度以下で貼り合わせを行う場合、硬化促進による樹脂の流動性の低下を防止することができ、配線回路基板へ搭載した際において十分な電気接続性が得られる。加温はロール側で行ってもよく、また半導体ウエハ固着ステージ側あるいはその双方であってもよい。貼り合わせ圧力は、貼り合わせ後のウエハ２とシート状熱硬化性樹脂組成物が所定の位置からずれない程度の圧力であればよい。また、貼り合わせは、常圧環境下または減圧環境下で行ってもよい。 For bonding the wafer 2 and the sheet-like thermosetting resin composition, a roll pressure bonding method is suitably used from the viewpoint of versatility and productivity. The bonding temperature may be performed at room temperature, but from the viewpoint of fluidity of the thermosetting resin composition, it is preferably not lower than the softening point of the resin composition and not higher than the curing reaction start temperature. The temperature range is appropriately selected depending on the composition of the resin composition, but is usually 30 to 150 ° C. When bonding is performed at a temperature higher than the softening point of the resin composition, the bump can be sufficiently embedded in the thermosetting resin, and when bonding is performed below the reaction start temperature of the resin composition, curing is accelerated. Decrease in the fluidity of the resin due to the above can be prevented, and sufficient electrical connectivity can be obtained when mounted on a printed circuit board. Heating may be performed on the roll side, or on the semiconductor wafer fixing stage side or both. The bonding pressure may be a pressure that does not cause the wafer 2 and the sheet-like thermosetting resin composition after bonding to deviate from a predetermined position. Further, the bonding may be performed under a normal pressure environment or a reduced pressure environment.
本発明の製造方法における工程（２）の一態様を図２に示す。図２において、工程（１）で得られたシート状熱硬化性樹脂組成物付ウエハに、耐圧容器６内で、該樹脂組成物の軟化点以上の温度で加圧している。 One mode of the step (2) in the production method of the present invention is shown in FIG. In FIG. 2, the sheet-shaped thermosetting resin composition-attached wafer obtained in step (1) is pressurized in the pressure vessel 6 at a temperature equal to or higher than the softening point of the resin composition.
耐圧容器６としては、密閉系であり、使用する圧力に耐えることができ、減圧操作を行う排気機構（例えば、排気口８）を有するものであれば特に限定されない。例えば、芦田製作所社製「ACS-1102」などが耐圧容器６として使用される。 The pressure vessel 6 is not particularly limited as long as it is a closed system, can withstand the pressure to be used, and has an exhaust mechanism (for example, an exhaust port 8) that performs a decompression operation. For example, “ACS-1102” manufactured by Iwata Manufacturing Co., Ltd. is used as the pressure vessel 6.
工程（２）における加圧は、気体を吸気口７から耐圧容器６に注入すること、すなわち気体圧縮により耐圧容器６内の圧力を上昇させることにより行う。耐圧容器６内に注入される気体としては、窒素、アルゴンなどの不活性ガス、酸素、空気などが挙げられ、中でも窒素、アルゴンなどの不活性ガスおよび空気が好ましい。注入手段としては、特に限定されないが、例えば、高圧ポンプによる注入などが挙げられる。 The pressurization in the step (2) is performed by injecting gas into the pressure resistant container 6 from the intake port 7, that is, by increasing the pressure in the pressure resistant container 6 by gas compression. Examples of the gas injected into the pressure-resistant vessel 6 include inert gases such as nitrogen and argon, oxygen, and air. Among these, inert gases and air such as nitrogen and argon are preferable. Although it does not specifically limit as an injection | pouring means, For example, injection | pouring by a high pressure pump etc. are mentioned.
加圧中の耐圧容器６内の圧力は、シート状熱硬化性樹脂組成物の内部またはシート状熱硬化性樹脂組成物とウエハの界面の気泡を除去できれば特に限定されないが、ウエハの強度および熱硬化性樹脂組成物の流動性の観点から、0.15〜5MPaが好ましく、0.2〜3MPaがより好ましい。また、圧力の上昇は、一段階で行っても、多段階で行ってもよい。 The pressure in the pressure vessel 6 during the pressurization is not particularly limited as long as it can remove bubbles inside the sheet-like thermosetting resin composition or the interface between the sheet-like thermosetting resin composition and the wafer, but the strength and heat of the wafer From the viewpoint of fluidity of the curable resin composition, 0.15 to 5 MPa is preferable, and 0.2 to 3 MPa is more preferable. Further, the pressure increase may be performed in one stage or in multiple stages.
加圧時間は、気泡の拡散および生産性の観点から、所定の圧力に達してから1〜60分が好ましく、5〜30分がより好ましい。このような時間の範囲であれば、混入気泡の除去を効果的に行うことが可能である。 The pressurization time is preferably 1 to 60 minutes, more preferably 5 to 30 minutes after reaching a predetermined pressure from the viewpoint of bubble diffusion and productivity. Within such a time range, it is possible to effectively remove the mixed bubbles.
加圧時の温度は、シート状熱硬化性樹脂組成物の軟化点以上の温度であり、該熱硬化性樹脂組成物の流動性の観点から、該樹脂組成物の軟化点以上で硬化反応開始温度以下が好ましい。その温度範囲は、樹脂組成物の組成によって適宜選択されるが、通常、30〜150℃である。 The temperature at the time of pressurization is a temperature equal to or higher than the softening point of the sheet-like thermosetting resin composition, and from the viewpoint of fluidity of the thermosetting resin composition, the curing reaction starts at a temperature higher than the softening point of the resin composition Below the temperature is preferred. The temperature range is appropriately selected depending on the composition of the resin composition, but is usually 30 to 150 ° C.
加圧終了後、例えば、排気口８から気体を放出しながら大気圧まで減圧して、耐圧容器６からシート状熱硬化性樹脂組成物付ウエハを取り出し、次工程に供する。減圧は一段階で行っても、多段階で行ってもよい。 After the pressurization is completed, for example, the pressure is reduced to atmospheric pressure while releasing the gas from the exhaust port 8, and the wafer with the sheet-like thermosetting resin composition is taken out from the pressure-resistant container 6 and subjected to the next step. The decompression may be performed in one stage or in multiple stages.
以上のような工程（２）を行うことにより、シート状熱硬化性樹脂組成物の内部またはシート状熱硬化性樹脂組成物とウエハの界面に混入していた気泡は十分に除去される。 By performing the step (2) as described above, the bubbles mixed in the sheet-like thermosetting resin composition or at the interface between the sheet-like thermosetting resin composition and the wafer are sufficiently removed.
所望の場合、工程（２）の後に、上記ウエハのパターン面とは反対の面、すなわち裏面を所定の厚さに研削しても良い（工程（２’））。ウエハの研削には、研削ステージを有する研削装置が特に限定なく、使用される。当該装置としては、ディスコ社製「DFG-840」などの公知の装置が挙げられる。また、研削条件も、特に限定はない。 If desired, after the step (2), the surface opposite to the pattern surface of the wafer, that is, the back surface may be ground to a predetermined thickness (step (2 ')). For grinding the wafer, a grinding apparatus having a grinding stage is used without particular limitation. Examples of the apparatus include known apparatuses such as “DFG-840” manufactured by DISCO Corporation. Also, the grinding conditions are not particularly limited.
本発明の製造方法における工程（３）の一態様を図４に示す。図４において、シート状熱硬化性樹脂組成物付ウエハがチップ１０に切断されている。工程（３）においては、切断の前にシート状熱硬化性樹脂組成物付ウエハのウエハ側にダイシングテープが貼られ、基材シート４は切断前に剥離されるか、または切断後に剥離される。 One mode of the step (3) in the production method of the present invention is shown in FIG. In FIG. 4, the wafer with a sheet-like thermosetting resin composition is cut into chips 10. In step (3), a dicing tape is applied to the wafer side of the wafer with the sheet-like thermosetting resin composition before cutting, and the substrate sheet 4 is peeled off before cutting or peeled off after cutting. .
ウエハの裏面（または研削面）にダイシングテープを貼り合わせたものの一例を図３に示す。かかる図では、ウエハ２の裏面にダイシングテープ９が貼られている。 An example in which a dicing tape is bonded to the back surface (or ground surface) of the wafer is shown in FIG. In this figure, a dicing tape 9 is attached to the back surface of the wafer 2.
本発明に用いられるダイシングテープ９としては、当該分野で通常使用されるものであれば特に限定されない。 The dicing tape 9 used in the present invention is not particularly limited as long as it is normally used in the field.
ダイシングテープ９の貼り合わせ装置および条件としては、特に限定されず、公知の装置および条件が用いられる。 The bonding apparatus and conditions for the dicing tape 9 are not particularly limited, and known apparatuses and conditions are used.
ウエハの切断は、特に限定されず、通常のダイシング装置を用いて行われる。 The cutting of the wafer is not particularly limited, and is performed using a normal dicing apparatus.
本発明の製造方法における工程（４）の一態様を図５に示す。図５において、工程（３）で得られたチップ１０がダイシングテープ９から取り外され配線回路基板１１に搭載されている。 One mode of the step (4) in the production method of the present invention is shown in FIG. In FIG. 5, the chip 10 obtained in the step (3) is removed from the dicing tape 9 and mounted on the printed circuit board 11.
配線回路基板１１としては、特に限定されないが、大別してセラミック基板、プラスチック基板が挙げられる。プラスチック基板としては、例えば、エポキシ基板、ビスマレイミドトリアジン基板、ポリイミド基板、ガラスエポキシ基板などが挙げられる。 The printed circuit board 11 is not particularly limited, but is roughly classified into a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, a polyimide substrate, and a glass epoxy substrate.
チップ１０の配線回路基板１１への搭載方法としては、まずチップ１０は、ダイシングテープ９からピックアップして取り外され、チップトレイに収納されるか、またはフリップチップボンダーのチップ搭載ノズルへと搬送された後、バンプ接合形態により、チップ１０を加熱と共に加圧して配線回路基板１１へ搭載すると同時に電気接続を得る方法、加熱と加圧と超音波を用いて配線回路基板へ搭載すると同時に電気接続を得る方法、チップ１０を配線回路基板１１に搭載した後、ハンダリフローにより電気接続を得る方法などが挙げられる。 As a method for mounting the chip 10 on the printed circuit board 11, the chip 10 is first picked up and removed from the dicing tape 9 and stored in the chip tray or conveyed to the chip mounting nozzle of the flip chip bonder. After that, by bump bonding, the chip 10 is heated and pressurized to be mounted on the printed circuit board 11 and simultaneously connected to the wiring circuit board 11. Examples thereof include a method of obtaining electrical connection by solder reflow after mounting the chip 10 on the printed circuit board 11.
上記加熱温度は、チップ１０および配線回路基板１１の劣化の防止の観点から、500℃以下が好ましく、450℃以下がより好ましい。下限としては、室温程度である。上記加圧条件は、チップの大きさなどにも依存するが、9.8×10-4〜9.8×10-1N/バンプが好ましく、4.9×10-3〜4.9×10-1N/バンプがより好ましい。 From the viewpoint of preventing deterioration of the chip 10 and the printed circuit board 11, the heating temperature is preferably 500 ° C. or less, and more preferably 450 ° C. or less. The lower limit is about room temperature. The pressurizing condition depends on the size of the chip, but preferably 9.8 × 10 −4 to 9.8 × 10 −1 N / bump, more preferably 4.9 × 10 −3 to 4.9 × 10 −1 N / bump. preferable.
以上の方法により、電気接続信頼性や耐久性に優れた半導体装置が効率的に得られる。得られた半導体装置は、本発明に包含される。 By the above method, a semiconductor device excellent in electrical connection reliability and durability can be obtained efficiently. The obtained semiconductor device is included in the present invention.
製造例
メチルエチルケトン300gに、ナフタレン型エポキシ樹脂（141g/eq、粘度：560mPa・s/50℃）100g、キシリレン型フェノール樹脂（171g/eq、粘度：0.04Pa・s/150℃）123.4g、アクリル酸アルキルエステル共重合体（ムーニー粘度ML(1+4）、100℃：52.5）56.9g、アジピン酸−イソプロピルビニルエーテル付加物（酸当量：160g/mol）8.8gおよび予めメチルエチルケトンに予備分散した球状シリカスラリー溶液（平均粒径：0.5μm、カットポイント：5μm、シリカ濃度：70wt％）431.7gを混合し、ホモミキサーを用いて800rpmで30分間攪拌した。
Production example 300 g of methyl ethyl ketone, 100 g of naphthalene type epoxy resin (141 g / eq, viscosity: 560 mPa · s / 50 ° C), 123.4 g of xylylene type phenolic resin (171 g / eq, viscosity: 0.04 Pa · s / 150 ° C), acrylic acid Alkyl ester copolymer (Mooney viscosity ML (1 + 4), 100 ° C: 52.5) 56.9g, adipic acid-isopropyl vinyl ether adduct (acid equivalent: 160g / mol) 8.8g and spherical silica slurry predispersed in methyl ethyl ketone beforehand 431.7 g of a solution (average particle size: 0.5 μm, cut point: 5 μm, silica concentration: 70 wt%) was mixed and stirred at 800 rpm for 30 minutes using a homomixer.
その後、混合物にマイクロカプセル化トリフェニルホスフィン（シェル／触媒比：50/50wt％）8.8gを混合し、ホモミキサーを用いて3000rpmでさらに10分間攪拌した。得られた混合物をシリコーン樹脂で離型処理したポリエステルシート上に塗布した後、110℃で5分間乾燥させ、メチルエチルケトンを除去することにより、厚さ75μmのシート状熱硬化性樹脂組成物をポリエステルシート上に作製した。 Thereafter, 8.8 g of microencapsulated triphenylphosphine (shell / catalyst ratio: 50/50 wt%) was mixed with the mixture, and the mixture was further stirred at 3000 rpm for 10 minutes using a homomixer. The resulting mixture was applied onto a polyester sheet that had been release-treated with a silicone resin, then dried at 110 ° C. for 5 minutes, and methyl ethyl ketone was removed to obtain a 75 μm thick sheet-like thermosetting resin composition as a polyester sheet. Made above.
得られたシート状熱硬化性樹脂組成物を、エチルビニルアセテートシート（基材シート、厚さ：135μm）上に70℃にて転写し、樹脂シートを作製した。 The obtained sheet-like thermosetting resin composition was transferred onto an ethyl vinyl acetate sheet (base sheet, thickness: 135 μm) at 70 ° C. to prepare a resin sheet.
得られたシート状熱硬化性樹脂組成物の軟化点を測定した。引っ張り型動的粘弾性装置（レオメトリック社製：RSA-II）を用いて周波数：1.0Hz、昇温速度：5℃/minで測定した場合の、貯蔵弾性率の減少開始温度を軟化点とした。軟化点は30℃であった。 The softening point of the obtained sheet-like thermosetting resin composition was measured. When the tensile dynamic viscoelasticity device (Rheometric Co., Ltd .: RSA-II) is used and measured at a frequency of 1.0 Hz and a heating rate of 5 ° C / min, the temperature at which the storage elastic modulus begins to decrease is defined as the softening point. did. The softening point was 30 ° C.
また、得られたシート状熱硬化性樹脂組成物の反応開始温度を、示査走査熱量計（パーキンエルマー社製：PYRIS）を用いて昇温速度：10℃/minで測定したところ、130℃であった。 Moreover, when the reaction start temperature of the obtained sheet-like thermosetting resin composition was measured at a heating rate of 10 ° C./min using an inspection scanning calorimeter (Perkin Elmer: PYRIS), it was 130 ° C. Met.
実施例１〜８および比較例１〜２
（１）ウエハへの貼付
製造例で作製した樹脂シートを、ロール貼り合せ機（日東電工社製：DR-8500-II）を用いてウエハ（サイズ：８インチ（約203.2mm）、ポリイミド、バンプ：鉛フリーハンダ、バンプ高さ：80μm）のパターン面に、ロール速度：20mm/秒、油圧：0.4MPaにて、表１に示すような周囲環境下で貼り合せした。ウエハへ貼った後、シート状熱硬化性樹脂組成物中またはシート状熱硬化性樹脂組成物とウエハ界面に混入した気泡の有無を光学顕微鏡により観察した。
Examples 1-8 and Comparative Examples 1-2
(1) Affixing to wafer Wafer (size: 8 inches (approx. 203.2 mm), polyimide, bumps) using a roll bonding machine (manufactured by Nitto Denko Corporation: DR-8500-II) : Lead-free solder, bump height: 80 μm), and bonded at a roll speed of 20 mm / sec and a hydraulic pressure of 0.4 MPa in an ambient environment as shown in Table 1. After being attached to the wafer, the presence or absence of bubbles mixed in the sheet-like thermosetting resin composition or at the interface between the sheet-like thermosetting resin composition and the wafer was observed with an optical microscope.
（２）加圧
（１）で作製したシート状熱硬化性樹脂組成物付ウエハを、芦田製作所社製：ACS-1102にいれ、表１に示した条件で窒素による加圧処理を行い、シート状熱硬化性樹脂組成物中またはシート状熱硬化性樹脂組成物とウエハ界面に混入した気泡の有無を光学顕微鏡により観察した。
(2) Pressurization The sheet-shaped thermosetting resin composition-prepared wafer prepared in (1) is put into an ACS-1102 manufactured by Iwata Manufacturing Co., Ltd., and subjected to pressure treatment with nitrogen under the conditions shown in Table 1 to obtain a sheet. The presence or absence of air bubbles mixed in the sheet-like thermosetting resin composition or at the interface between the sheet-like thermosetting resin composition and the wafer was observed with an optical microscope.
（３）切断
（２）で作製したシート状熱硬化性樹脂組成物付ウエハをダイシングテープ（日東電工社製：DU-300）に貼り、基材シートを剥がした後、ダイシング装置（ディスコ社製：DFD-651）により10mm×10mmのチップに切断しシート状熱硬化性樹脂組成物付チップを作製した。
(3) Cutting After sticking the wafer with the sheet-like thermosetting resin composition prepared in (2) to a dicing tape (manufactured by Nitto Denko Corporation: DU-300) and peeling off the base sheet, a dicing machine (manufactured by Disco Corporation) : DFD-651) was cut into 10 mm × 10 mm chips to produce chips with a sheet-like thermosetting resin composition.
（４）チップ搭載
（３）で作製したシート状熱硬化性樹脂組成物付チップを、フリップチップボンダー（パナソニックファクトリーソリューションズ社製：FB30T-M）により配線回路基板へ加熱圧着（圧着温度：240℃、圧着時間：10秒、圧力：9.8×10-3N/バンプ）によりチップ搭載と樹脂封止を行った。得られた半導体装置は乾燥炉にて160℃で60分間樹脂のポストキュアを行い、目的とする半導体装置を得た。
(4) Chip mounting The chip with the sheet-like thermosetting resin composition prepared in (3) is thermocompression-bonded (crimping temperature: 240 ° C) to the printed circuit board using a flip chip bonder (manufactured by Panasonic Factory Solutions: FB30T-M). The chip was mounted and the resin was sealed by pressure bonding time: 10 seconds, pressure: 9.8 × 10 −3 N / bump). The obtained semiconductor device was subjected to resin post-cure for 60 minutes at 160 ° C. in a drying furnace to obtain a target semiconductor device.
表１の結果より、樹脂シートを貼付した後においては全てのサンプルで気泡の存在が確認された。しかしながら、実施例１〜８では、加熱加圧することにより、混入していた気泡は全て除去されることが確認され、ウエハの損傷も確認されなかった。一方、比較例１では加圧温度が樹脂シートの軟化点よりも低かったために、気泡が充分に除去されず、比較例２では加圧温度は樹脂シートの軟化点よりも高かったが、気泡を除去するに充分な圧力がかからなかったため気泡の残存が確認された。 From the results in Table 1, the presence of bubbles was confirmed in all samples after the resin sheet was attached. However, in Examples 1 to 8, it was confirmed that all the mixed bubbles were removed by heating and pressing, and damage to the wafer was not confirmed. On the other hand, in Comparative Example 1, since the pressurization temperature was lower than the softening point of the resin sheet, the bubbles were not sufficiently removed. In Comparative Example 2, the pressurization temperature was higher than the softening point of the resin sheet. Since sufficient pressure was not applied to remove, the presence of bubbles was confirmed.
本発明の製造方法は、アンダーフィル方式の半導体装置の製造方法に利用できる。 The manufacturing method of the present invention can be used for a manufacturing method of an underfill type semiconductor device.
１ シート状樹脂組成物
２ ウエハ
３ バンプ
４ 基材シート
５ 気泡
６ 密閉容器
７ 吸気口
８ 排気口
９ ダイシングテープ
１０ チップ
１１ 配線回路基板
DESCRIPTION OF SYMBOLS 1 Sheet-like resin composition 2 Wafer 3 Bump 4 Base material sheet 5 Air bubble 6 Airtight container 7 Intake port 8 Exhaust port 9 Dicing tape 10 Chip 11 Wiring circuit board
Claims (3)
（２）耐圧容器内で、該熱硬化性樹脂組成物の軟化点以上の温度で、気体圧縮による加圧を該ウエハに行う工程、
（３）該ウエハをチップに切断する工程、および
（４）該チップを配線回路基板に搭載する工程
を含む、半導体装置の製造方法。 (1) A step of bonding a sheet-like thermosetting resin composition to a pattern surface of a wafer having bumps,
(2) A step of applying pressure to the wafer by gas compression at a temperature equal to or higher than the softening point of the thermosetting resin composition in a pressure vessel.
(3) A method for manufacturing a semiconductor device, comprising: cutting the wafer into chips; and (4) mounting the chip on a printed circuit board.
（２）耐圧容器内で、該熱硬化性樹脂組成物の軟化点以上の温度で、気体圧縮による加圧を該ウエハに行う工程、
（２’）該ウエハの裏面を研削する工程、
（３）該ウエハをチップに切断する工程、および
（４）該チップを配線回路基板に搭載する工程
を含む、半導体装置の製造方法。 (1) A step of bonding a sheet-like thermosetting resin composition to a pattern surface of a wafer having bumps,
(2) A step of applying pressure to the wafer by gas compression at a temperature equal to or higher than the softening point of the thermosetting resin composition in a pressure vessel.
(2 ′) a step of grinding the back surface of the wafer;
(3) A method for manufacturing a semiconductor device, comprising: cutting the wafer into chips; and (4) mounting the chip on a printed circuit board.
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