JP2016103625A - Sealing sheet, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sealing sheet which can be used in manufacturing a semiconductor device improved in quality and reliability.SOLUTION: A sealing sheet is arranged to change in weight by 1 wt.% or less before and after immersion in N-methyl-2-pyrrolidone of 50°C for 3000 seconds with respect to the weight after a thermal treatment at 150°C for one hour in the case of using a sample thereof subjected to the thermal treatment.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a sealing sheet and a semiconductor device.

  Conventionally, as a method for manufacturing a semiconductor device, one or a plurality of semiconductor chips fixed to a substrate or the like is sealed with a sealing resin, and then the sealing body is diced into a package of a semiconductor device unit. It has been known. As such a sealing resin, for example, a sealing sheet made of a thermosetting resin is known (see, for example, Patent Document 1).

  On the other hand, in recent years, the miniaturization of semiconductor devices and the miniaturization of wiring have been accelerating, and more I in a narrow semiconductor chip region (a region overlapping with a semiconductor chip when the semiconductor chip is seen through in plan view). / O pads and vias must be provided, and at the same time the pin density has increased. Further, in the BGA (Ball Grid Array) package, a large number of terminals are formed in the semiconductor chip region, and the region for forming other elements is limited. Therefore, the semiconductor chip region is formed on the semiconductor package substrate. The method of pulling out the wiring from the terminal to the outside of is taken. The semiconductor package manufactured in this way is called FOWLP (fan-out wafer level package).

JP 2006-19714 A

  In the manufacture of FOWLP, after sealing a semiconductor chip with a sealing resin, the circuit formation surface of the semiconductor chip is exposed, and wiring is formed on the circuit formation surface (rewiring formation step). In this rewiring forming process, various kinds of organic solvents are used.

  However, with the conventional sealing resin, the resin may be dissolved in the organic solvent in the rewiring forming process. Therefore, the surface of the sealing resin becomes rough, and it may be difficult to form the rewiring layer uniformly over the sealing resin surface and the semiconductor chip surface. In addition, the organic solvent used in the rewiring process is lowered by the sealing resin that has been dissolved, and there is a problem that the quality is affected.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a sealing sheet that can be used for manufacturing a semiconductor device with improved quality and reliability. It is in. Moreover, it is providing the semiconductor device manufactured using the said sheet | seat for sealing.

  The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a sealing sheet,
Using a sample after heat treatment at 150 ° C. for 1 hour, the weight change before and after being immersed in N-methyl-2-pyrrolidone at 50 ° C. for 3000 seconds is 1% by weight or less based on the heat treatment. Features.

  According to the sealing sheet according to the present invention, the dissolution into N-methyl-2-pyrrolidone is sufficiently suppressed after the heat treatment. In the rewiring process, various organic solvents are used, and among them, the organic solvent that increases the amount of the sealing sheet that dissolves is N-methyl-2-pyrrolidone. Therefore, if the dissolution into N-methyl-2-pyrrolidone is suppressed, the dissolution into other organic solvents is also suppressed. As a result, the use of the sealing sheet makes it possible to manufacture a semiconductor device with improved quality and reliability, such as uniform formation of the rewiring layer. Moreover, since the amount of dissolution into the organic solvent is small, a decrease in the purity of the organic solvent can be suppressed. As a result, it is possible to reduce the frequency of replacement of the organic solvent.

  In the said structure, it is preferable that a thermosetting material and an inorganic compound are included, and the total content of the said thermosetting material and the said inorganic compound is 95 weight% or more of the whole.

A thermosetting material hardly dissolves in an organic solvent when crosslinked by heat curing by heat treatment. In addition, inorganic compounds are difficult to dissolve in organic solvents. Therefore, when the total content of the thermosetting material and the inorganic compound is 95% by weight or more, there are few components that are easily dissolved in the organic solvent. As a result, if the sealing sheet is used, a semiconductor device with further improved quality and reliability can be manufactured.
In the present specification, the “thermosetting material” refers to a material that is involved in thermosetting, and that is incorporated into a crosslinked structure by thermosetting. That is, a thermoplastic resin (for example, an acrylic resin having a functional group) that has a functional group and is incorporated into a crosslinked structure by thermosetting is included in the “thermosetting material”. However, a thermoplastic resin having a functional group and having a functional group content (content of monomer units) of less than 10% (e.g. Acrylic resin having a group content of less than 10% is not included in the “thermosetting material” because it hardly contributes to the crosslinked structure.

  ADVANTAGE OF THE INVENTION According to this invention, the sheet | seat for sealing which can be used for manufacturing the semiconductor device whose quality and reliability improved more can be provided.

It is a cross-sectional schematic diagram of the sealing sheet which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited only to these embodiments.

(Sealing sheet)
FIG. 1 is a schematic cross-sectional view of a sealing sheet 40 according to this embodiment. The sealing sheet 40 according to the present embodiment is composed of one layer. However, in the present invention, the sealing sheet is not limited to this example, and may be composed of two or more layers. The sealing sheet 40 is laminated on a release liner 41 such as a polyethylene terephthalate (PET) film. However, in this invention, the sheet | seat for sealing is not laminated | stacked on a peeling liner etc., and may be independent.

  The sealing sheet 40 can be used for manufacturing a semiconductor device in the form of FOWLP (fan-out wafer level package). In the manufacture of FOWLP, after sealing a semiconductor chip with a sealing resin, the circuit formation surface of the semiconductor chip is exposed, and wiring is formed on the circuit formation surface (rewiring formation step).

The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in N-methyl-2-pyrrolidone at 50 ° C. for 3000 seconds is 1 % By weight or less. The weight change is preferably 0.8% by weight or less or 0.6% by weight or less, more preferably 0.3% by weight or less, and further preferably 0.2% by weight or less. Moreover, although the said weight change is so preferable that it is small, it is 0.01 weight% or more and 0.02 weight% or more, for example. Since the weight change is 1% by weight or less, the dissolution into N-methyl-2-pyrrolidone is sufficiently suppressed after thermosetting. In the rewiring process, various organic solvents are used, and among them, the organic solvent that increases the amount of the sealing sheet that dissolves is N-methyl-2-pyrrolidone. Therefore, if the dissolution into N-methyl-2-pyrrolidone is suppressed, the dissolution into other organic solvents is also suppressed. As a result, the use of the sealing sheet 40 makes it possible to manufacture a semiconductor device with improved quality and reliability, such as the uniform formation of the rewiring layer. Moreover, since the amount of dissolution into the organic solvent is small, a decrease in the purity of the organic solvent can be suppressed. As a result, it is possible to reduce the frequency of replacement of the organic solvent.
Examples of a method for controlling the weight change to 1% by weight or less include, for example, increasing the content of thermosetting materials and inorganic compounds that are difficult to dissolve in an organic solvent, and thermoplastics that are highly likely to be dissolved in an organic solvent. Examples thereof include a method of reducing the resin content or adopting a thermoplastic resin that hardly dissolves in an organic solvent.
The change in weight is according to the method described in the examples.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in a 75% aqueous solution of tetrahydrofurfuryl alcohol at 60 ° C. for 420 seconds is 0 based on the heat treatment as a reference. It is preferably 5% by weight or less, and more preferably 0.4% by weight or less.

  The sealing sheet 40 was subjected to heat treatment using a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in a 3% tetramethylammonium hydroxide (TMAH) 3% aqueous solution at 22 ± 3 ° C. for 200 seconds. Based on the latter, it is preferably 0.4% by weight or less, and more preferably 0.3% by weight or less.

  The sealing sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in a 10% aqueous solution of potassium hydroxide (KOH) at 22 ± 3 ° C. for 90 seconds As a reference, it is preferably 0.1% by weight or less, and more preferably 0.08% by weight or less.

  The sealing sheet 40 uses a sample heat-treated at 150 ° C. for 1 hour, and the weight change before and after being immersed in a 80% aqueous solution of propylene glycol monomethyl ether at 22 ± 3 ° C. for 60 seconds is based on that after heat treatment. , Preferably 0.3% by weight or less, and more preferably 0.2% by weight or less.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in a 10% aqueous solution of acetic acid at 22 ± 3 ° C. for 60 seconds is 0. It is preferably at most 05% by weight, more preferably at most 0.04% by weight.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in γ-butyrolactone (GBL) at 125 ° C. for 240 seconds is 0. It is preferably 3% by weight or less, and more preferably 0.2% by weight or less.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in dimethyl sulfoxide (DMSO) at 40 ° C. for 600 seconds is 0.1 on the basis of after heat treatment. The content is preferably not more than wt%, more preferably not more than 0.08 wt%.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour. The weight change before and after being immersed in cyclopentanone at 40 ° C. for 1200 seconds is 0.1% by weight based on the heat treatment. Or less, and more preferably 0.08% by weight or less.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in methyl ethyl ketone at 22 ± 3 ° C. for 600 seconds is 0.01% by weight based on the heat treatment. Or less, more preferably 0.008% by weight or less.

  The sealing sheet 40 uses a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in acetone at 22 ± 3 ° C. for 600 seconds is 0.01% by weight based on the heat treatment. Or less, more preferably 0.008% by weight or less.

  The sealing resin sheet 40 may be formed with vias depending on the application. For example, it may be formed in the manufacture of FOWLP. In addition to the manufacture of FOWLP, vias may be formed in the sealing resin in the manufacture of semiconductor devices. The via is formed, for example, by first forming an opening for the via in the sealing resin with a laser or the like, and then washing away the resin residue remaining in the opening with a desmear liquid or the like (desmear treatment), and then opening the opening. It can be formed by filling a conductive paste or the like.

  As a general desmear liquid, an aqueous solution in which a permanganate such as sodium permanganate or potassium permanganate and a strong alkali are mixed may be used. Specifically, as the desmear liquid composed of an aqueous solution obtained by mixing these permanganate and strong alkali, for example, a liquid composed of a mixed aqueous solution of about 0.4 mol / L permanganate and about 1N strong alkali. Is mentioned.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in a 1N (1 N) sodium hydroxide (NaOH) aqueous solution at 80 ° C. for 600 seconds is subjected to the heat treatment. Is preferably 0.25% by weight or less, more preferably 0.2% by weight or less.

The 1N sodium hydroxide aqueous solution assumes a desmear solution. When the weight change is 0.25 wt% or less, it can be said that the sealing sheet 40 after thermosetting is prevented from being dissolved into the desmear liquid. As a result, if the sealing sheet 40 is used, a via (through mold via) can be suitably formed. As a result, a semiconductor device with improved quality and reliability can be manufactured. In addition, since the amount of dissolution into the desmear liquid is small, a decrease in the purity of the desmear liquid can be suppressed. As a result, it is possible to reduce the frequency of replacement of the desmear liquid.
As a method for controlling the change in weight to 0.25% by weight or less, for example, it is highly possible to increase the content of a thermosetting material or an inorganic compound that is difficult to dissolve in the desmear liquid or to dissolve in the desmear liquid. Examples thereof include a method of reducing the content of the thermoplastic resin or adopting a thermoplastic resin that hardly dissolves in the desmear liquid.

  The encapsulating sheet 40 is a sample after heat treatment at 150 ° C. for 1 hour, and the weight change before and after being immersed in an 80 ° C. 1N (1N) potassium hydroxide (KOH) aqueous solution for 600 seconds is subjected to heat treatment. Is preferably 0.25% by weight or less, more preferably 0.2% by weight or less.

The 1N potassium hydroxide aqueous solution assumes a desmear solution. When the weight change is 0.25 wt% or less, it can be said that the sealing sheet 40 after thermosetting is prevented from being dissolved into the desmear liquid. As a result, if the sealing sheet 40 is used, a via (through mold via) can be suitably formed. As a result, a semiconductor device with improved quality and reliability can be manufactured. In addition, since the amount of dissolution into the desmear liquid is small, a decrease in the purity of the desmear liquid can be suppressed. As a result, it is possible to reduce the frequency of replacement of the desmear liquid.
As a method for controlling the change in weight to 0.25% by weight or less, for example, it is highly possible to increase the content of a thermosetting material or an inorganic compound that is difficult to dissolve in the desmear liquid or to dissolve in the desmear liquid. Examples thereof include a method of reducing the content of the thermoplastic resin or adopting a thermoplastic resin that hardly dissolves in the desmear liquid.

  The constituent material of the sealing sheet 40 preferably includes a thermosetting material and an inorganic compound. Further, the total content of the thermosetting material and the inorganic compound is preferably 95% by weight or more, more preferably 94% by weight or more of the whole material constituting the sealing sheet 40. More preferably, it is 93% by weight or more. A thermosetting material hardly dissolves in an organic solvent when crosslinked by heat curing by heat treatment. In addition, inorganic compounds are difficult to dissolve in organic solvents. Therefore, when the total content of the thermosetting material and the inorganic compound is 95% by weight or more, there are few components that are easily dissolved in the organic solvent. As a result, if the sealing sheet 40 is used, a semiconductor device with further improved quality and reliability can be manufactured.

  The thermosetting material includes a thermosetting resin such as an epoxy resin and a curing agent. Although the said hardening | curing agent will not be specifically limited if it functions as a hardening | curing agent of the said thermosetting resin, A phenol resin is preferable. Especially, it is preferable that the sheet | seat 40 for sealing contains an epoxy resin and the phenol resin as a hardening | curing agent. Thereby, favorable thermosetting is obtained.

  The epoxy resin is not particularly limited. For example, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.

  From the viewpoint of ensuring the toughness of the epoxy resin after curing and the reactivity of the epoxy resin, those having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C. are preferably solid, and particularly reliable. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.

  The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more.

  As the phenol resin, those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and from the viewpoint of high curing reactivity, phenol. A novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.

  From the viewpoint of curing reactivity, the blending ratio of the epoxy resin and the phenol resin is blended so that the total number of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin. Preferably, it is 0.9 to 1.2 equivalents.

  The total content of the epoxy resin and the phenol resin in the sealing sheet 40 is preferably 2.5% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to the semiconductor chip 53 can be obtained satisfactorily when it is 2.5% by weight or more. The total content of the epoxy resin and the phenol resin in the sealing sheet 40 is preferably 13% by weight or less, and more preferably 8% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.

  It is preferable that the sealing sheet 40 does not substantially contain a thermoplastic resin. However, the weight change before and after immersing in N-methyl-2-pyrrolidone at 50 ° C. for 3000 seconds using the sample after heat treatment at 150 ° C. for 1 hour is 1% by weight or less based on the heat treatment. As long as it is within the range, a thermoplastic resin may be included. When a thermoplastic resin is contained, handling properties when uncured and low stress properties of a cured product can be obtained. When a thermoplastic resin is contained, it is preferable to use a thermoplastic resin having solvent resistance.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned.

When a thermoplastic resin is contained, it is preferable to use a thermoplastic resin having solvent resistance. Examples of the solvent-resistant thermoplastic resin include a styrene-isobutylene-styrene copolymer.
When a thermoplastic resin having solvent resistance is used, the content of the thermoplastic resin is, for example, preferably 3.5% by weight or less, more preferably 3.0% by weight with respect to the entire sealing sheet 40. % Or less.
Moreover, when using thermoplastic resins other than the thermoplastic resin which has the said solvent resistance as a thermoplastic resin, as content of a thermoplastic resin, for example with respect to the whole sheet | seat 40 for sealing, 0 weight% or less, More preferably, 0.8 weight% or less is mentioned.

  It is preferable that the sealing sheet 40 includes an inorganic filler. The inorganic filler is included in the “inorganic compound” of the present invention.

  The inorganic filler is not particularly limited, and various conventionally known fillers can be used. For example, quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.

As silica, silica powder is preferable, and fused silica powder is more preferable. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Especially, the thing of the range whose average particle diameter is 0.1-35 micrometers is preferable, The thing of the range of 10-30 micrometers is more preferable, The thing of the range of 15-25 micrometers is further more preferable.
The average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.

  It is preferable that content of the said inorganic filler in the sheet | seat 40 for sealing is 75 to 95 weight% with respect to the whole sheet | seat 40 for sealing, More preferably, it is 78 to 95 weight%. When the content of the inorganic filler is 75% by weight or more with respect to the entire sealing sheet 40, the thermal expansion coefficient can be suppressed to be low, so that mechanical breakdown due to thermal shock can be suppressed. As a result, on the other hand, when the content of the inorganic filler is 95% by weight or less with respect to the whole sealing sheet 40, flexibility, fluidity, and adhesiveness are further improved.

  The sealing sheet 40 may contain a silane coupling agent.

  Moreover, the sheet | seat 40 for sealing may contain the inorganic filler surface-treated beforehand with the silane coupling agent as the said inorganic filler. Although it does not specifically limit as said silane coupling agent, For example, an epoxy-type silane coupling agent is mentioned. Specific examples include 3-glycidoxypropyltrimethoxysilane.

  It is preferable that the sealing sheet 40 includes a curing accelerator. The curing accelerator is included in the “thermosetting material” of the present invention.

  The curing accelerator is not particularly limited as long as it accelerates thermal curing. When the sealing sheet 40 includes an epoxy resin and a phenol resin as a curing agent, it is not particularly limited as long as curing of the epoxy resin and the phenol resin proceeds. For example, triphenylphosphine, tetraphenylphosphonium tetraphenylborate Organic phosphorus compounds such as 2-phenyl-4,5-dihydroxymethylimidazole, imidazole compounds such as 2-phenyl-4-methyl-5-hydroxymethylimidazole, and the like. Of these, 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature rises during kneading, and the sealing sheet 40 can be satisfactorily produced.

  As for content of a hardening accelerator, 0.1-5 weight part is preferable with respect to a total of 100 weight part of an epoxy resin and a phenol resin.

  The sealing sheet 40 may contain a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation. As the flame retardant composition, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do. The flame retardant component is included in the “inorganic compound” of the present invention.

  From the viewpoint of exhibiting a flame retardant effect even in a small amount, the phosphorus element content contained in the phosphazene flame retardant is preferably 12% by weight or more.

  The content of the flame retardant component in the sealing sheet 40 is preferably 10% by weight or more, and more preferably 15% by weight or more in the total organic components (excluding inorganic fillers). A flame retardance is favorably acquired as it is 10 weight% or more. The content of the thermoplastic resin in the sealing sheet 40 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).

  The sealing sheet 40 may contain a silane coupling agent. It does not specifically limit as a silane coupling agent, 3-Glycidoxypropyl trimethoxysilane etc. are mentioned. The silane coupling agent is included in the “thermosetting material” of the present invention.

  The content of the silane coupling agent in the sealing sheet 40 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.

  The sealing sheet 40 is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained.

  When the sealing sheet 40 is colored, a color material (colorant) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments. The dye and the pigment are included in the “inorganic compound” of the present invention.

  In addition to the above-described components, other additives can be appropriately added to the sealing sheet 40 as necessary within a range not departing from the gist of the present invention.

  Although the thickness of the sheet | seat 40 for sealing is not specifically limited, From a viewpoint used as a sheet | seat for sealing, it is 50 micrometers-2000 micrometers, for example.

  Although the manufacturing method of the sealing sheet 40 is not particularly limited, a method of preparing a kneaded product of the resin composition for forming the sealing sheet 40 and coating the obtained kneaded product, or the obtained kneading A method of plastically processing an object into a sheet is preferable. Thereby, since the sheet | seat 40 for sealing can be produced without using a solvent, it can suppress that the semiconductor chip 53 is influenced by the solvent which volatilized.

  Specifically, a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape. As the kneading conditions, the temperature is preferably equal to or higher than the softening point of each component described above. For example, when considering the thermosetting property of 30 to 150 ° C. and epoxy resin, preferably 40 to 140 ° C., more preferably 60 to 120. ° C. The time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.

The kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration | invasion of the gas to a kneaded material can be prevented. The pressure under reduced pressure is preferably 0.1 kg / cm ² or less, more preferably 0.05 kg / cm ² or less. Although the minimum of the pressure under pressure reduction is not specifically limited, For example, it is 1 * 10 < ^-4 > kg / cm < ² > or more.

  When the kneaded material is applied to form the sealing sheet 40, the kneaded material after melt-kneading is preferably applied in a high temperature state without cooling. The coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method. The temperature at the time of coating is preferably at least the softening point of each component described above, and considering the thermosetting and moldability of the thermosetting resin (epoxy resin), for example, 40 to 150 ° C., preferably 50 to 140 ° C. More preferably, it is 70-120 degreeC.

  When the kneaded material is plastically processed to form the sealing sheet 40, it is preferable that the kneaded material after melt-kneading is plastically processed in a high temperature state without cooling. The plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method. The plastic processing temperature is preferably higher than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C., considering the thermosetting property and moldability of the epoxy resin. is there.

  The sealing sheet 40 can also be obtained by adjusting a varnish by dissolving and dispersing a resin or the like for forming the sealing sheet 40 in an appropriate solvent, and coating the varnish.

  The sheet | seat 40 for sealing can be used for the manufacturing method of the following semiconductor device, for example.

Preparing a laminate in which a semiconductor chip is temporarily fixed on a temporary fixing sheet; and
A step of preparing a laminate in which a semiconductor chip is temporarily fixed on a temporary fixing sheet with a circuit forming surface as a bonding surface;
Step B for preparing a sealing sheet;
Step C of embedding the semiconductor chip in the sealing sheet and forming a sealing body in which the semiconductor chip is embedded in the sealing sheet;
After the step C, the step D for thermosetting the sealing sheet;
After the step D, a step E of peeling the temporary fixing sheet from the sealing body;
A method of manufacturing a semiconductor device including at least a step F of forming a rewiring on the circuit forming surface side of the sealing body after the step E.

  2 to 9 are schematic cross-sectional views for explaining the method for manufacturing a semiconductor device according to this embodiment.

[Laminated body preparation process]
As shown in FIG. 2, in the method for manufacturing a semiconductor device according to the present embodiment, first, a stacked body 50 in which a semiconductor chip 53 is temporarily fixed on a temporary fixing sheet 60 is prepared (Step A).

  In the present embodiment, a case where a plurality of semiconductor chips 53 are temporarily fixed on the temporary fixing sheet 60 will be described, but the number of semiconductor chips temporarily fixed to the temporary fixing sheet in the present invention is not particularly limited. .

  As shown in FIG. 2, the temporary fixing sheet 60 is normally used in a form of being laminated on a support body 61 that is a strength matrix. As shown in FIG. 2, the temporary fixing sheet 60 may be attached to the entire surface of the support 61, and is attached only to a part of the support 61, and a part of the support 61 is exposed. May be.

(Temporary fixing sheet)
As the temporary fixing sheet 60, a thermally expandable pressure-sensitive adhesive layer containing a foaming agent can be employed. The heat-expandable pressure-sensitive adhesive layer containing a foaming agent is described in detail in, for example, Japanese Patent Application Laid-Open No. 2009-040930, and will be briefly described below. Moreover, as the sheet 60 for temporary fixing, the thermal peeling sheet which has an imide group and has a structural unit derived from the diamine which has an ether structure in part at least can also be employ | adopted. Regarding the heat-release sheet having an imide group and having a structural unit derived from a diamine having an ether structure at least in part, it is described in detail in JP 2013-153122 A, etc. Description is omitted.

(Thermal expansion adhesive layer)
The thermally expandable pressure-sensitive adhesive layer can be formed of a pressure-sensitive adhesive composition containing a polymer component and a foaming agent. As the polymer component (particularly the base polymer), an acrylic polymer can be suitably used.

  The weight average molecular weight of the acrylic polymer is not particularly limited, but is preferably 350,000 to 1,000,000, more preferably about 450,000 to 800,000.

  In addition, an external cross-linking agent can be appropriately used for the heat-expandable pressure-sensitive adhesive layer in order to adjust the adhesive force. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. The amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) with respect to 100 parts by weight of the base polymer.

  As described above, the thermally expandable pressure-sensitive adhesive layer contains a foaming agent for imparting thermal expandability. Therefore, with the sealing body 58 formed on the thermally expandable pressure-sensitive adhesive layer as the temporary fixing sheet 60 (see FIG. 5), the temporary fixing sheet 60 is at least partially heated at any time, The foaming agent contained in the heated temporary fixing sheet 60 is expanded and / or expanded, so that the temporary fixing sheet 60 is at least partially expanded, and at least a part of the temporary fixing sheet 60 is obtained. The adhesive surface (interface with the sealing body 58) corresponding to the expanded portion is deformed into an irregular shape due to the expansion, and the adhesion area between the temporary fixing sheet 60 and the sealing body 58 is reduced. Thereby, the adhesive force between both reduces and the sealing body 58 can be peeled from the sheet | seat 60 for temporary fixing (refer FIG. 6).

(Foaming agent)
The foaming agent used in the thermally expandable pressure-sensitive adhesive layer is not particularly limited, and can be appropriately selected from known foaming agents. A foaming agent can be used individually or in combination of 2 or more types. As the foaming agent, thermally expandable microspheres can be suitably used.

(Thermally expandable microsphere)
The heat-expandable microsphere is not particularly limited, and can be appropriately selected from known heat-expandable microspheres (such as various inorganic heat-expandable microspheres and organic heat-expandable microspheres). As the thermally expandable microspheres, a microencapsulated foaming agent can be suitably used from the viewpoint of easy mixing operation. Examples of such thermally expandable microspheres include microspheres in which substances such as isobutane, propane, and pentane that are easily gasified and expanded by heating are encapsulated in an elastic shell. The shell is often formed of a hot-melt material or a material that is destroyed by thermal expansion. Examples of the substance forming the shell include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

  In the present embodiment, the heat-expandable pressure-sensitive adhesive layer has various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, an antioxidant, and a surfactant. Agent, cross-linking agent, etc.).

(Support)
The support 61 is a thin plate member that serves as a strength matrix of the temporary fixing sheet 60. The material of the support 61 may be appropriately selected in consideration of handling properties, heat resistance, and the like. For example, a metal material such as SUS, a plastic material such as polyimide, polyamideimide, polyether ether ketone, and polyether sulfone, glass Alternatively, a silicon wafer or the like can be used. Among these, a SUS plate is preferable from the viewpoints of heat resistance, strength, reusability, and the like.

  The thickness of the support 61 can be appropriately selected in consideration of the intended strength and handleability, and is preferably 100 to 5000 μm, more preferably 300 to 2000 μm.

(Formation method of temporary fixing sheet)
The temporarily fixing sheet 60 is obtained by forming the temporarily fixing sheet 60 on the support 61. When a heat-expandable pressure-sensitive adhesive layer is employed as the temporary fixing sheet 60, the heat-expandable pressure-sensitive adhesive layer includes, for example, a pressure-sensitive adhesive, a foaming agent (such as heat-expandable microspheres), a solvent, and the like as necessary. It can be formed by using a conventional method of forming a sheet-like layer by mixing with other additives. Specifically, for example, a method of applying a mixture containing an adhesive, a foaming agent (such as thermally expandable microspheres), and, if necessary, a solvent and other additives onto the support 61, an appropriate separator ( The heat-expandable pressure-sensitive adhesive layer may be formed by a method of applying the mixture on a release paper or the like to form a heat-expandable pressure-sensitive adhesive layer and transferring (transferring) the mixture onto the support 61. it can.

(Thermal expansion method of the thermally expandable pressure-sensitive adhesive layer)
In the present embodiment, the thermally expandable pressure-sensitive adhesive layer can be thermally expanded by heating. As the heat treatment method, for example, an appropriate heating means such as a hot plate, a hot air dryer, a near infrared lamp, an air dryer or the like can be used. The heating temperature during the heat treatment may be equal to or higher than the foaming start temperature (thermal expansion start temperature) of the foaming agent (thermally expansible microspheres, etc.) in the heat-expandable pressure-sensitive adhesive layer. It can be set as appropriate depending on the reduction of the adhesion area depending on the type of agent (thermally expansible microspheres, etc.), the heat resistance of the support including a sealing body including a semiconductor chip, the heating method (heat capacity, heating means, etc.), and the like. As general heat treatment conditions, the temperature is 100 ° C. to 250 ° C., and it is 1 second to 90 seconds (hot plate or the like) or 5 minutes to 15 minutes (hot air dryer or the like). Note that the heat treatment can be performed at an appropriate stage depending on the purpose of use. In some cases, an infrared lamp or heated water can be used as the heat source during the heat treatment.

(Middle layer)
In the present embodiment, an intermediate layer may be provided between the temporary fixing sheet 60 and the support 61 for the purpose of improving the adhesion and improving the peelability after heating (not shown). .

  In the laminated body preparation step, a plurality of semiconductor chips 53 are arranged on the temporary fixing sheet 60 so that the circuit forming surface 53a faces the temporary fixing sheet 60 and temporarily fixed (see FIG. 2). A known device such as a flip chip bonder or a die bonder can be used for temporarily fixing the semiconductor chip 53.

  The layout and the number of arrangement of the semiconductor chips 53 can be set as appropriate according to the shape and size of the temporary fixing sheet 60, the number of target packages produced, and the like, for example, in a plurality of rows and a plurality of columns. They can be arranged in a matrix. Heretofore, an example of the laminate preparation process has been shown.

[Step of preparing a sealing sheet]
In the method for manufacturing a semiconductor device according to the present embodiment, as shown in FIG. 1, a sealing sheet 40 is prepared (step B).

[Step of arranging sealing sheet and laminate]
After the step of preparing the sealing sheet, as shown in FIG. 3, the stacked body 50 is disposed on the lower heating plate 62 with the surface on which the semiconductor chip 53 is temporarily fixed facing upward. The sealing sheet 40 is disposed on the surface on which the semiconductor chip 53 is temporarily fixed. In this step, the laminated body 50 may be first disposed on the lower heating plate 62, and then the sealing sheet 40 may be disposed on the laminated body 50, and the sealing sheet 40 may be disposed on the laminated body 50. A laminate in which the laminate 50 and the sealing sheet 40 are laminated may be disposed on the lower heating plate 62 after being laminated first.

[Step of forming sealing body]
Next, as shown in FIG. 4, the semiconductor chip 53 is embedded in the sealing sheet 40 and the semiconductor chip 53 is embedded in the sealing sheet 40 by hot pressing with the lower heating plate 62 and the upper heating plate 64. The sealed body 58 is formed (step C). The sealing sheet 40 functions as a sealing resin for protecting the semiconductor chip 53 and its accompanying elements from the external environment. Thereby, the sealing body 58 in which the semiconductor chip 53 temporarily fixed on the temporary fixing sheet 60 is embedded in the sealing sheet 40 is obtained.

The hot pressing conditions for embedding the semiconductor chip 53 in the sealing sheet 40 are not particularly limited as long as the sealing sheet 40 does not protrude from the temporary fixing sheet 60, but the temperature is, for example, 40 to 40. 100 ° C., preferably 50 to 90 ° C., pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. Thereby, a semiconductor device in which the semiconductor chip 53 is embedded in the sealing sheet 40 can be obtained. In view of improving the adhesion and followability of the sealing sheet 40 to the semiconductor chip 53 and the temporary fixing sheet 60, it is preferable to press the sheet under a reduced pressure condition.
As the pressure reduction conditions, the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and the pressure reduction holding time (time from the pressure reduction start to the press start) is, for example, 5 to 600 seconds. Yes, preferably 10 to 300 seconds.

[Release liner peeling process]
Next, the release liner 41 is peeled (see FIG. 5).

[Thermosetting process]
Next, the sealing sheet 40 is thermally cured (step D). Specifically, for example, the entire sealing body 58 in which the semiconductor chip 53 temporarily fixed on the temporary fixing sheet 60 is embedded in the sealing sheet 40 is heated.

  As the conditions for the thermosetting treatment, the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The heating time is preferably 10 minutes or more, more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less. Moreover, you may pressurize as needed, Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more. On the other hand, the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.

[Heat-expandable pressure-sensitive adhesive layer peeling step]
Next, as shown in FIG. 6, the temporary fixing sheet 60 is peeled from the sealing body 58 (step E). Specifically, the temporary fixing sheet 60 is thermally expanded to perform separation between the temporary fixing sheet 60 and the sealing body 58. Alternatively, a procedure of performing peeling at the interface between the support 61 and the temporary fixing sheet 60 and then performing thermal expansion at the interface between the temporary fixing sheet 60 and the sealing body 58 may be suitably employed. it can. In either case, the temporary fixing sheet 60 is heated and thermally expanded to reduce the adhesive force, thereby easily peeling at the interface between the temporary fixing sheet 60 and the sealing body 58. Can do. In particular, it is preferable that the heat-expandable pressure-sensitive adhesive layer has a structure that does not peel off by heating in the thermosetting step but peels off by heating in the heat-expandable pressure-sensitive adhesive layer peeling step.

[Process of grinding sealing sheet]
Next, as necessary, as shown in FIG. 7, the sealing sheet 40 of the sealing body 58 is ground to expose the back surface 53 c of the semiconductor chip 53. The method for grinding the sealing sheet 40 is not particularly limited, and examples thereof include a grinding method using a grindstone that rotates at high speed.

(Rewiring process)
Next, a rewiring forming step (step F) is performed in which the rewiring 69 is formed on the circuit forming surface 53a of the semiconductor chip 53 of the sealing body 58. In the rewiring forming step, after the temporary fixing sheet 60 is peeled off, a rewiring 69 connected to the exposed semiconductor chip 53 is formed on the sealing body 58 (see FIG. 8).

As a method of forming the rewiring, for example, a metal seed layer is formed on the exposed semiconductor chip 53 by using a known method such as a vacuum film forming method, and the rewiring is performed by a known method such as a semi-additive method. Wiring 69 can be formed.
In the rewiring process, various organic solvents are used. As the sealing sheet 40 used in the present embodiment, a sample after heat-curing at 150 ° C. for 1 hour is used, and N-methyl- The weight change before and after being immersed in 2-pyrrolidone for 3000 seconds is 1% by weight or less based on the heat treatment. Therefore, the sealing sheet 40 is prevented from being dissolved into various organic solvents. Therefore, the surface on the side where the rewiring is formed becomes uniform. As a result, the rewiring 69 can be formed uniformly.

  Thereafter, an insulating layer such as polyimide or PBO may be formed on the rewiring 69 and the sealing body 58.

  Moreover, you may form a via | veer in the sheet | seat 40 for sealing as needed. For example, first, a via opening is formed in the sealing sheet 40 after thermosetting with a laser or the like, and then a resin residue remaining in the opening is washed away with a desmear liquid or the like (desmear treatment). The opening is filled with a conductive paste or the like to form a via.

(Bump formation process)
Next, bumping processing for forming bumps 67 on the formed rewiring 69 may be performed (see FIG. 8). The bumping process can be performed by a known method such as a solder ball or solder plating.

(Dicing process)
Finally, dicing is performed on the laminated body including elements such as the semiconductor chip 53, the sealing sheet 40, and the rewiring 69 (see FIG. 9). Thereby, the semiconductor device 59 in which the wiring is drawn outside the chip region can be obtained.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

<Preparation of sealing sheet>
The components used in the examples and comparative examples and the blending ratio will be described.
[component]
Epoxy resin A: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 190 g / eq.)
Epoxy resin B: Epicoat 828 manufactured by Mitsubishi Chemical Corporation (epochine equivalent 190 g / eq.)
Epoxy resin C: YX4000H manufactured by Mitsubishi Chemical Corporation (epochine equivalent 192 g / eq., Biphenyl type epoxy resin)
Phenol resin A: MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 200 g / eq.) Manufactured by Meiwa Kasei Co., Ltd.
Thermoplastic resin A: SIBSTAR 072T (styrene-isobutylene-styrene copolymer) manufactured by Kaneka Corporation
Thermoplastic resin B: SG-28GM manufactured by Nagase ChemteX Corporation (butyl acrylate-acrylonitrile-glycidyl methacrylate copolymer, content ratio of glycidyl group-containing monomer unit: about 7%) (in this specification, “thermosetting It is not included in the "sexual material"
Filler A: FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica powder, average particle size of 17.6 μm)
Filler B: SE2050 (average particle size 0.5 μm) manufactured by Admatechs
Filler C: A surface treatment of SO-25R (average particle size 0.5 μm) manufactured by Admatechs Co., Ltd. with 3-glycidoxypropyltrimethoxysilane (product name: KBM-403 manufactured by Shin-Etsu Chemical Co., Ltd.). Surface treatment with 1.5 parts by weight of silane coupling agent with respect to 480 parts by weight of inorganic filler (SO-25R).
Carbon black (pigment): Mitsubishi Chemical Corporation # 20 (particle size 50 nm)
Curing accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.

(Examples 1 to 3, Comparative Example 1)
Each component was blended according to the blending ratio shown in Table 1, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm ² ) to prepare a kneaded product. Next, the obtained kneaded material was formed into a sheet shape by a flat plate pressing method, and then cut into a predetermined size. Thus, a sealing sheet having a length of 50 mm, a width of 15 mm, and a thickness of 500 μm was obtained.

(Measurement of weight change before and after immersion in N-methyl-2-pyrrolidone)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 3000 seconds in a state immersed in N-methyl-2-pyrrolidone at 50 ° C. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in tetrahydrofurfuryl alcohol)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 420 seconds in a state where it was immersed in a 75% aqueous solution of tetrahydrofurfuryl alcohol at 60 ° C (tetrahydrofurfuryl alcohol manufactured by Wako Pure Chemical Industries, Ltd. diluted in a 75% aqueous solution). After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in tetramethylammonium hydroxide)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 200 seconds in a state immersed in a 3% aqueous solution of tetramethylammonium hydroxide (TMAH) at 22 ± 3 ° C. (manufactured by Tokyo Chemical Industry Co., Ltd., 3% aqueous solution). After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in potassium hydroxide)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left to stand for 90 seconds in a state immersed in a 10% aqueous solution of potassium hydroxide (KOH) at 22 ± 3 ° C. (10% aqueous solution manufactured by Wako Pure Chemical Industries, Ltd.). After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in propylene glycol monomethyl ether)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was allowed to stand for 60 seconds in a state of being immersed in an 80% aqueous solution of propylene glycol monomethyl ether at 22 ± 3 ° C. (80% aqueous solution manufactured by Wako Pure Chemical Industries, Ltd.). After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in acetic acid)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 60 seconds in a state immersed in a 10% aqueous solution of acetic acid at 22 ± 3 ° C. (10% aqueous solution manufactured by Wako Pure Chemical Industries, Ltd.). After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in γ-butyrolactone)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was allowed to stand for 240 seconds in a state immersed in γ-butyrolactone (GBL) (manufactured by Tokyo Chemical Industry Co., Ltd.) at 125 ° C. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in dimethyl sulfoxide)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 600 seconds in a state immersed in dimethyl sulfoxide (DMSO) (manufactured by Wako Pure Chemical Industries, Ltd.) at 40 ° C. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in cyclopentanone)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 1200 seconds in a state immersed in cyclopentanone (manufactured by Wako Pure Chemical Industries, Ltd.) at 40 ° C. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in methyl ethyl ketone)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left still for 600 seconds in a state where it was immersed in 22 ± 3 ° C. methyl ethyl ketone (manufactured by Wako Pure Chemical Industries, Ltd.). After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in acetone)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was allowed to stand for 600 seconds in a state where it was immersed in acetone at 22. ±. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in 1N sodium hydroxide aqueous solution)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left to stand for 600 seconds in a state immersed in a 1N (1N) sodium hydroxide (NaOH) aqueous solution at 80 ° C. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Measurement of weight change before and after immersion in 1N aqueous potassium hydroxide)
First, the sheet | seat for sealing which concerns on an Example and a comparative example was heat-processed at 150 degreeC for 1 hour. Then, it returned to room temperature within the desiccator, and measured the weight (weight before immersion). Next, it was left to stand for 600 seconds in a state immersed in a 1N (1N) potassium hydroxide (KOH) aqueous solution at 80 ° C. After washing twice for 3 minutes with ultrapure water at room temperature (23 ° C.), it was dried at 150 ° C. for 30 minutes. Then, it returned to room temperature within the desiccator, and measured the weight (weight after immersion).
The change in weight was determined by the following formula. The results are shown in Table 2.
(Weight change (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

40 sealing sheet 50 laminated body 53 semiconductor chip 58 sealing body 59 semiconductor device 60 temporary fixing sheet

Claims (4)

  Using a sample after heat treatment at 150 ° C. for 1 hour, the weight change before and after being immersed in N-methyl-2-pyrrolidone at 50 ° C. for 3000 seconds is 1% by weight or less based on the heat treatment. A sheet for sealing. Including a thermosetting material and an inorganic compound;
The total content of the said thermosetting material and the said inorganic type compound is 95 weight% or more of the whole, The sheet | seat for sealing of Claim 1 characterized by the above-mentioned.   The sealing sheet according to claim 2, comprising a styrene-isobutylene block copolymer as the thermoplastic material.   The semiconductor device manufactured using the sheet | seat for sealing of any one of Claims 1-3.

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