TW201448135A - Hollow sealing resin sheet and production method for hollow package - Google Patents
Hollow sealing resin sheet and production method for hollow package Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
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- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2924/146—Mixed devices
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
Abstract
Description
本發明係關於中空密封用樹脂薄片及中空封裝之製造方法。 The present invention relates to a resin sheet for hollow sealing and a method for producing a hollow package.
電子裝置封裝之製作，代表地為透過凸塊等將被固定於基板等的1或複數的電子裝置以密封樹脂密封，因應必要採用切割之過程使密封體成為電子裝置單位的封裝。作為如此之密封樹脂，可使用薄片狀的密封樹脂。 The electronic device package is produced by sealing a resin or a plurality of electronic devices that are fixed to a substrate or the like through a bump or the like, and the sealing body is required to be a package of the electronic device. As such a sealing resin, a sheet-shaped sealing resin can be used.
近年伴隨半導體封裝，SAW(Surface Acoustic Wave)過濾器、或CMOS(Complementary Metal Oxide Semiconductor)感測器、加速度感測器等稱作MEMS之微小電子裝置之開發持續進展。將此等之電子裝置密封的封裝，各自具有用以確保一般表面彈性波之傳播、光學系的維持、電子裝置的可動構件的可動性之中空構造。該中空構造多設置為基板與元件間的空隙。密封時，為了確保可動構件的運作信賴性或元件的接續信賴性需要維持中空構造且密封。例如，專利文獻1記載使用凝 膠狀的硬化性樹脂薄片將機能元件進行中空鑄型之技術。 In recent years, the development of microelectronic devices called MEMS, such as a semiconductor package, a SAW (Surface Acoustic Wave) filter, or a CMOS (Complementary Metal Oxide Semiconductor) sensor, an acceleration sensor, and the like, has continued to progress. Each of the packages in which the electronic devices are sealed has a hollow structure for ensuring propagation of a general surface elastic wave, maintenance of an optical system, and movability of a movable member of the electronic device. The hollow structure is often provided as a gap between the substrate and the element. At the time of sealing, it is necessary to maintain a hollow structure and seal in order to ensure the operational reliability of the movable member or the connection reliability of the element. For example, Patent Document 1 describes the use of coagulation. A gel-like curable resin sheet is a technique in which a functional element is subjected to hollow casting.
[專利文獻1]日本特開2006-19714號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-19714
有鑑於上述賦予中空構造的凸塊，其尺寸愈小花費愈高、或上述可動構件的複雜化或複合化用的中空構造之擴大的要求，預想今後可採用使凸塊直徑增加而將空隙擴大之對策。在上述專利文獻1記載之技術，作為元件與基板間的中空構造，寬若至數十μm左右之空隙則可邊維持期望的中空構造邊將電子裝置密封。但是，作為中空構造，邊確保寬接近100μm的空隙邊進行密封，則有產生樹脂流入中空構造等而對應變困難、封裝製作的良率降低之場合。 In view of the above-described requirements for imparting a hollow structure, the smaller the size, the higher the cost, or the expansion of the movable member or the expansion of the hollow structure for the composite, it is expected that the diameter of the bump can be increased to expand the gap in the future. Countermeasures. In the technique described in Patent Document 1, as the hollow structure between the element and the substrate, the electronic device can be sealed while maintaining a desired hollow structure with a gap of about several tens of μm. However, when the sealing is performed while securing a gap having a width of approximately 100 μm as the hollow structure, there is a case where the resin flows into the hollow structure and the like, and the yield becomes difficult, and the yield of the package is lowered.
又，因中空構造之擴大與封裝全體的縮小化之相反的要求，產生需使晶片的厚度比以往薄型化的必要。但，使晶片的厚度變薄，則有晶片本身的強度降低，變得易受基板的翹曲之影響、封裝的信賴性降低之情形。 Further, as the expansion of the hollow structure is contrary to the demand for the reduction of the entire package, it is necessary to make the thickness of the wafer thinner than in the related art. However, when the thickness of the wafer is made thinner, the strength of the wafer itself is lowered, and the warpage of the substrate is easily affected, and the reliability of the package is lowered.
本發明的目的在於提供中空構造之空隙的寬即使為100μm左右，仍可維持中空構造，且防止封裝翹曲，可製作信賴性高的中空封裝之中空密封用樹脂薄片及 中空封裝之製造方法。 An object of the present invention is to provide a hollow resin structure for a hollow package having high reliability, and to maintain a hollow structure even when the width of the void of the hollow structure is about 100 μm, and to prevent warpage of the package. Manufacturing method of a hollow package.
本發明者們努力研究結果，發現藉由採用下述構成，可解決上述課題，完成本發明。 As a result of intensive studies, the inventors have found that the above problems can be solved by adopting the following configuration, and the present invention has been completed.
亦即，本發明的中空密封用樹脂薄片，無機充填劑以70體積%以上90體積%以下的含量含有，動的黏彈性測定之在60~130℃的最低熔融黏度為2000Pa．s以上20000Pa．s以下，在150℃、1小時熱硬化後的常溫(20℃)的儲藏彈性率為1GPa以上20GPa以下，在150℃、1小時熱硬化後的玻璃轉化溫度以下之線膨脹係數為5ppm/K以上15ppm/K以下。 That is, the resin sheet for hollow sealing of the present invention contains the inorganic filler in an amount of 70% by volume or more and 90% by volume or less, and the minimum melt viscosity at 60 to 130 ° C measured by dynamic viscoelasticity is 2000 Pa. s above 20000Pa. s Hereinafter, the storage modulus at room temperature (20 ° C) after heat curing at 150 ° C for 1 hour is 1 GPa or more and 20 GPa or less, and the coefficient of linear expansion below the glass transition temperature after heat curing at 150 ° C for 1 hour is 5 ppm / K. Above 15ppm/K.
該中空密封用樹脂薄片，因藉由高含量之無機充填劑使最低熔融黏度在2000Pa．s以上20000Pa．s以下，抑制樹脂進入中空構造，可製造信賴性高的中空封裝。又，因使熱硬化後的儲藏彈性率及線膨脹係數各自在指定範圍，故可確保硬化後的封裝強度，且在焊料回流步驟等受到高溫，仍可防止封裝翹曲，可製造信賴性更高的封裝。又，最低熔融黏度、儲藏彈性率、玻璃轉化溫度及線膨脹係數的測定方法係依據實施例的記載。 The resin sheet for hollow sealing has a minimum melt viscosity of 2000 Pa by a high content of inorganic filler. s above 20000Pa. s Hereinafter, the resin is prevented from entering the hollow structure, and a highly reliable hollow package can be manufactured. In addition, since the storage elastic modulus and the linear expansion coefficient after the heat curing are each within the specified range, the package strength after curing can be ensured, and the package can be prevented from being warped at a high temperature in the solder reflow step, and the reliability can be further improved. High package. Further, the method for measuring the minimum melt viscosity, the storage modulus, the glass transition temperature, and the coefficient of linear expansion is based on the description of the examples.
本發明亦包含含有使該中空密封用樹脂薄片一邊維持前述被附著體與前述電子裝置間的中空部一邊層合於前述電子裝置上以包覆配置於被附著體上的1或複數 的電子裝置的層合步驟、及 In the present invention, the resin sheet for hollow sealing is laminated on the electronic device while maintaining the hollow portion between the adherend and the electronic device, and is coated on the attached body. Lamination step of the electronic device, and
使前述中空密封用樹脂薄片硬化形成密封體的密封體形成步驟的中空封裝之製造方法。 A method of manufacturing a hollow package in which the resin sheet for hollow sealing is cured to form a sealed body.
11‧‧‧中空密封用樹脂薄片 11‧‧‧Seal sheet for hollow sealing
11a‧‧‧支持體 11a‧‧‧Support
13‧‧‧SAW晶片 13‧‧‧SAW chip
15‧‧‧密封體 15‧‧‧ Sealing body
18‧‧‧中空封裝 18‧‧‧ hollow package
[圖1]本發明的一實施形態之樹脂薄片模式表示之斷面圖。 Fig. 1 is a cross-sectional view showing a resin sheet mode according to an embodiment of the present invention.
[圖2A]本發明的一實施形態之中空封裝製造方法的一步驟模式表示之圖。 Fig. 2A is a view showing a one-step mode of a method of manufacturing a hollow package according to an embodiment of the present invention.
[圖2B]本發明的一實施形態之中空封裝製造方法的一步驟模式表示之圖。 Fig. 2B is a view showing a one-step mode of a method of manufacturing a hollow package according to an embodiment of the present invention.
[圖2C]本發明的一實施形態之中空封裝製造方法的一步驟模式表示之圖。 Fig. 2C is a view showing a one-step mode of a method of manufacturing a hollow package according to an embodiment of the present invention.
以下舉實施形態將本發明詳細說明，但本發明不僅限於此等之實施形態。 The present invention will be described in detail below with reference to the embodiments, but the invention is not limited to the embodiments.
圖1為本發明的一實施形態之中空密封用樹脂薄片(以下、亦僅稱「樹脂薄片」)11模式表示之斷 面圖。樹脂薄片11，代表地以層合於聚乙烯對苯二甲酸酯(PET)薄膜等的支持體11a上的狀態被提供。又，支持體11a上，為使樹脂薄片11之剝離容易地進行可施以脫膜處理。 Fig. 1 is a schematic view showing a resin sheet for hollow sealing (hereinafter, simply referred to as "resin sheet") according to an embodiment of the present invention. Surface map. The resin sheet 11 is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Moreover, the support 11a can be subjected to a release treatment in order to facilitate the peeling of the resin sheet 11.
樹脂薄片11的硬化前的動的黏彈性測定之在60~130℃的最低熔融黏度為2000Pa．s以上20000Pa．s以下即可，以3000Pa．s以上15000Pa．s以下為佳、5000Pa．s以上10000Pa．s以下更佳。樹脂薄片11的最低熔融黏度藉由在上述範圍，有效率地防止樹脂進入中空構造，可得到信賴性高的中空封裝。上述最低熔融黏度未達下限，則有造成樹脂進入中空構造、封裝的信賴性降低之虞。另一方面，若超過上述上限，則有晶片埋覆性降低而產生孔洞之虞。 The dynamic viscoelasticity of the resin sheet 11 before curing is measured at a minimum melt viscosity of 60 Pa at 60 to 130 ° C. s above 20000Pa. s can be as follows, to 3000Pa. s above 15000Pa. s below is better, 5000Pa. s above 10000Pa. s is better below. The lowest melt viscosity of the resin sheet 11 can effectively prevent the resin from entering the hollow structure by the above range, and a highly reliable hollow package can be obtained. When the minimum melt viscosity is less than the lower limit, there is a possibility that the resin enters the hollow structure and the reliability of the package is lowered. On the other hand, when the above upper limit is exceeded, there is a possibility that the wafer embedding property is lowered to cause voids.
在樹脂薄片11，在150℃、1小時熱硬化後的20℃中儲藏彈性率為1GPa以上20GPa以下，其下限以1.5GPa以上為佳、2GPa以上更佳。又，該儲藏彈性率的上限以10GPa以下為佳、5GPa以下更佳。硬化後的儲藏彈性率藉由在上述範圍，可確保封裝的強度。未達上述儲藏彈性率的下限，則有封裝強度變得不足、信賴性降低之虞。另一方面，超過上述上限的場合，有對衝撃變脆、封裝強度變得不足，且該場合亦有信賴性降低之虞。 In the resin sheet 11, the storage modulus at 20 ° C after heat curing at 150 ° C for 1 hour is 1 GPa or more and 20 GPa or less, and the lower limit is preferably 1.5 GPa or more, more preferably 2 GPa or more. Further, the upper limit of the storage modulus is preferably 10 GPa or less, more preferably 5 GPa or less. The storage elastic modulus after hardening can ensure the strength of the package by the above range. When the lower limit of the storage elastic modulus is not reached, the package strength is insufficient and the reliability is lowered. On the other hand, when the above upper limit is exceeded, the cushioning becomes brittle and the package strength is insufficient, and in this case, the reliability is lowered.
在該密封樹脂薄片，150℃、1小時熱硬化處理後的玻璃轉化溫度以70℃以上為佳、90℃以上較佳、110℃以上更佳。該密封樹脂薄片藉由具備如此之構成， 可使耐熱性提高。相對於此，上述熱硬化處理後的玻璃轉化溫度的上限雖不特別限定，但由熱硬化時的硬化收縮降低的觀點，以250℃以下為佳、200℃以下更佳。 In the sealing resin sheet, the glass transition temperature after heat curing at 150 ° C for 1 hour is preferably 70 ° C or more, more preferably 90 ° C or more, and still more preferably 110 ° C or more. The sealing resin sheet has such a configuration. Heat resistance can be improved. On the other hand, the upper limit of the glass transition temperature after the thermosetting treatment is not particularly limited, but is preferably 250° C. or lower and more preferably 200° C. or lower from the viewpoint of reducing the curing shrinkage during thermosetting.
使樹脂薄片11在150℃、1小時熱硬化後的玻璃轉化溫度以下之線膨脹係數為5ppm/K以上15ppm/K以下即可。該線膨脹係數的下限以6ppm/K以上為佳、7ppm/K以上更佳。該線膨脹係數的上限為12ppm/K以下為佳、9ppm/K以下更佳。藉由使指定的熱處理後的熱處理物的玻璃轉化溫度以下之線膨脹係數在上述範圍，密封處理後即使對封裝構造實施高溫處理，可使樹脂薄片11與尤其具有低線膨脹係數的基板之線膨脹係數的差變小，可防止基板的翹曲等。上述線膨脹係數未達上述下限或超過上述上限，則有樹脂薄片與基板的線膨脹係數的差變大而封裝產生翹曲之情形。 The linear expansion coefficient of the resin sheet 11 at a glass transition temperature of 150 ° C or less after 1 hour of heat curing may be 5 ppm/K or more and 15 ppm/K or less. The lower limit of the linear expansion coefficient is preferably 6 ppm/K or more, more preferably 7 ppm/K or more. The upper limit of the coefficient of linear expansion is preferably 12 ppm/K or less, more preferably 9 ppm/K or less. By setting the linear expansion coefficient below the glass transition temperature of the heat-treated product after heat treatment to be in the above range, even if the package structure is subjected to high-temperature treatment after the sealing treatment, the resin sheet 11 and the substrate having a particularly low coefficient of linear expansion can be used. The difference in expansion coefficient becomes small, and warpage of the substrate or the like can be prevented. When the coefficient of linear expansion does not reach the above lower limit or exceeds the above upper limit, the difference in linear expansion coefficient between the resin sheet and the substrate may increase and warpage may occur in the package.
樹脂薄片11以含有環氧樹脂、及酚樹脂為佳。藉由此可得到良好的熱硬化性。 The resin sheet 11 is preferably an epoxy resin or a phenol resin. Thereby, good thermosetting properties can be obtained.
環氧樹脂方面，並不特別限定。例如，可使用三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯基型環氧樹脂、改性雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、改性雙酚F型環氧樹脂、二環戊二烯型環氧樹脂、酚酚醛清漆型環氧樹脂、苯氧基樹脂等的各種的環氧樹脂。此等環氧樹脂可單獨使用或2種以上併用。 The epoxy resin is not particularly limited. For example, a triphenylmethane type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, a modified bisphenol A type epoxy resin, a bisphenol A type epoxy resin, a bisphenol can be used. Various epoxy resins such as F-type epoxy resin, modified bisphenol F-type epoxy resin, dicyclopentadiene type epoxy resin, phenol novolac type epoxy resin, and phenoxy resin. These epoxy resins may be used singly or in combination of two or more.
由確保環氧樹脂的硬化後的韌性及環氧樹脂 的反應性觀點，以環氧當量150~250、軟化點或者融點在50~130℃之常溫下為固形者為佳，其中，由信賴性的觀點，以三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯基型環氧樹脂更佳。 To ensure the toughness and epoxy resin after curing of epoxy resin The reactivity viewpoint is preferably an epoxy equivalent of 150 to 250, a softening point or a melting point at a normal temperature of 50 to 130 ° C, wherein a triphenylmethane type epoxy resin is used from the viewpoint of reliability. A cresol novolak type epoxy resin or a biphenyl type epoxy resin is more preferable.
酚樹脂為在與環氧樹脂間產生硬化反應者則無特別限定。例如，可使用酚酚醛清漆樹脂、酚芳烷基樹脂、聯苯基芳烷基樹脂、二環戊二烯型酚樹脂、甲酚酚醛清漆樹脂、可溶酚醛樹脂等。此等酚樹脂可單獨使用或2種以上併用。 The phenol resin is not particularly limited as long as it causes a hardening reaction with the epoxy resin. For example, a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resol resin, or the like can be used. These phenol resins may be used singly or in combination of two or more.
酚樹脂方面，由與環氧樹脂反應性的觀點，以使用羥基當量為70~250、軟化點為50~110℃者為佳，其中，由硬化反應性高觀點，宜使用酚酚醛清漆樹脂。又，由信賴性的觀點，酚芳烷基樹脂或聯苯基芳烷基樹脂般低吸濕性者亦宜使用。 In the case of the phenol resin, from the viewpoint of reactivity with the epoxy resin, it is preferred to use a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C. Among them, a phenol novolak resin is preferably used from the viewpoint of high curing reactivity. Further, from the viewpoint of reliability, those having low hygroscopicity like a phenol aralkyl resin or a biphenyl aralkyl resin are also preferably used.
環氧樹脂與酚樹脂的搭配比例，由硬化反應性觀點，相對環氧樹脂中之環氧基1當量，以酚樹脂中之羥基的合計成為0.7~1.5當量之方式來摻合為佳、更較佳為成為0.9~1.2當量。 The ratio of the epoxy resin to the phenol resin is preferably from 1 to 1.5 equivalents based on the epoxy group in the epoxy resin, and the total amount of the hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents. It is preferably 0.9 to 1.2 equivalents.
樹脂薄片11中之環氧樹脂及酚樹脂的合計含量的下限以2.0重量%以上為佳、3.0重量%以上更佳。在2.0重量%以上，則可得到良好的對電子裝置、基板等之接著力。另一方面，上述合計含量的上限以20重量%以下為佳、10重量%以下更佳。在20重量%以下，則可使樹脂薄片的吸濕性降低。 The lower limit of the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 2.0% by weight or more, more preferably 3.0% by weight or more. When it is 2.0% by weight or more, a good adhesion to an electronic device, a substrate, or the like can be obtained. On the other hand, the upper limit of the total content is preferably 20% by weight or less, more preferably 10% by weight or less. When it is 20% by weight or less, the hygroscopicity of the resin sheet can be lowered.
樹脂薄片11，以含熱塑性樹脂為佳。藉由此，可使得到的中空密封用樹脂薄片的耐熱性、可撓性、強度提高。 The resin sheet 11 is preferably a thermoplastic resin. Thereby, the heat resistance, flexibility, and strength of the obtained resin sheet for hollow sealing can be improved.
熱塑性樹脂方面，可舉例如天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯共聚合物、乙烯-丙烯酸共聚合物、乙烯-丙烯酸酯共聚合物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等的聚醯胺樹脂、苯氧基樹脂、丙烯酸樹脂、PET或PBT等的飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異丁烯-苯乙烯嵌段共聚合物等。此等之熱塑性樹脂可單獨或2種以上併用。其中，由樹脂薄片之低應力性、低吸水性觀點，以苯乙烯-異丁烯-苯乙烯嵌段共聚合物為佳。 Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and poly Butadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, saturated polyester resin such as phenoxy resin, acrylic resin, PET or PBT , polyamidoximine resin, fluororesin, styrene-isobutylene-styrene block copolymer, and the like. These thermoplastic resins may be used alone or in combination of two or more. Among them, a styrene-isobutylene-styrene block copolymer is preferred from the viewpoint of low stress and low water absorption of the resin sheet.
樹脂薄片11中之熱塑性樹脂的含量以1.0重量%以上為佳、1.5重量%以上更佳。在1.0重量%以上，則可賦予樹脂薄片柔軟性、可撓性。樹脂薄片11中之熱塑性樹脂的含量以3.5重量%以下為佳、3.0重量%以下更佳。在3.5重量%以下，則可使對電子裝置或基板之樹脂薄片的接著性提升。 The content of the thermoplastic resin in the resin sheet 11 is preferably 1.0% by weight or more, more preferably 1.5% by weight or more. When it is 1.0% by weight or more, the resin sheet can be imparted with flexibility and flexibility. The content of the thermoplastic resin in the resin sheet 11 is preferably 3.5% by weight or less, more preferably 3.0% by weight or less. When it is 3.5% by weight or less, the adhesion to the resin sheet of the electronic device or the substrate can be improved.
樹脂薄片11，以70體積%以上90體積%以下的含量含有無機質充填劑。上述含量的下限以74體積%以上為佳、78體積%以上更佳。又，上述含量的上限以85體積%以下為佳、83體積%以下更佳。無機充填劑的含量藉由在上述範圍，賦予中空構造附近的樹脂脹容樣作 用，可維持中空構造，同時使硬化後的線膨脹係數降低，防止封裝翹曲，可得到高信賴性的中空封裝。無機充填劑的含量未達上述下限，則有無法得到充分脹容樣作用、產生封裝翹曲的場合，超過上述上限則有樹脂薄片的流動性或柔軟性降低、對基板或晶片之接著性降低之情形。又，無機充填劑為複數種的粒子的混合物的場合，該混合物的含量符合上述範圍。 The resin sheet 11 contains an inorganic filler in an amount of 70% by volume or more and 90% by volume or less. The lower limit of the above content is preferably 74% by volume or more, more preferably 78% by volume or more. Further, the upper limit of the above content is preferably 85% by volume or less, more preferably 83% by volume or less. The content of the inorganic filler is imparted to the resin in the vicinity of the hollow structure by the above range. In order to maintain the hollow structure, the linear expansion coefficient after hardening is reduced, and the package warpage is prevented, and a highly reliable hollow package can be obtained. When the content of the inorganic filler is less than the above lower limit, the film may not be sufficiently swollen and the package warpage may occur. When the content exceeds the upper limit, the fluidity or flexibility of the resin sheet may be lowered, and the adhesion to the substrate or the wafer may be lowered. The situation. Further, when the inorganic filler is a mixture of a plurality of kinds of particles, the content of the mixture satisfies the above range.
無機質充填劑的含量亦可以「重量%」為單位說明。代表的二氧化矽的含量，以「重量%」為單位說明。 The content of the inorganic filler can also be expressed in terms of "% by weight". The content of the representative cerium oxide is described in terms of "% by weight".
二氧化矽通常比重為2.2g/cm3，故二氧化矽的含量(重量%)之較佳範圍如下。亦即，樹脂薄片11中之二氧化矽的含量以81重量%以上為佳、84重量%以上更佳。樹脂薄片11中之二氧化矽的含量以94重量%以下為佳、91重量%以下更佳。 The cerium oxide usually has a specific gravity of 2.2 g/cm 3 , so the preferred range of the content (% by weight) of cerium oxide is as follows. That is, the content of cerium oxide in the resin sheet 11 is preferably 81% by weight or more, more preferably 84% by weight or more. The content of cerium oxide in the resin sheet 11 is preferably 94% by weight or less, more preferably 91% by weight or less.
氧化鋁通常比重為3.9g/cm3，故氧化鋁的含量(重量%)之較佳範圍如下。亦即，樹脂薄片11中之氧化鋁的含量以88重量%以上為佳、90重量%以上更佳。樹脂薄片11中之氧化鋁的含量以97重量%以下為佳、95重量%以下更佳。 The alumina generally has a specific gravity of 3.9 g/cm 3 , so the preferred range of the content (% by weight) of alumina is as follows. That is, the content of the alumina in the resin sheet 11 is preferably 88% by weight or more, more preferably 90% by weight or more. The content of the alumina in the resin sheet 11 is preferably 97% by weight or less, more preferably 95% by weight or less.
無機充填劑的形狀不特別限制，可為球狀(包含橢圓體狀)、多面體狀、多角柱狀、不定形狀等任意的形狀，但由在中空構造附近的高充填狀態之達成或適度流動性的觀點，以球狀為佳。 The shape of the inorganic filler is not particularly limited, and may be any shape such as a spherical shape (including an ellipsoid shape), a polyhedral shape, a polygonal column shape, or an indefinite shape, but is achieved by a high filling state near the hollow structure or moderate fluidity. The view is better with a ball.
無機質充填劑，並不特別限制，可使用以往習知的各種充填劑，例如，石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽等)、氧化鋁、氮化鋁、氮化矽、氮化硼的粉末。此等可單獨使用或2種以上併用。其中，由可使線膨脹係數良好地降低之理由，以二氧化矽、氧化鋁為佳、二氧化矽更佳。 The inorganic filler is not particularly limited, and various conventional fillers such as quartz glass, talc, cerium oxide (melted cerium oxide or crystalline cerium oxide), alumina, aluminum nitride, and the like can be used. A powder of tantalum nitride or boron nitride. These may be used alone or in combination of two or more. Among them, cerium oxide and aluminum oxide are preferred, and cerium oxide is more preferable because the linear expansion coefficient can be favorably lowered.
二氧化矽方面，以二氧化矽粉末為佳、熔融二氧化矽粉末更佳。熔融二氧化矽粉末方面，可舉例如球狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末，但由流動性觀點，以球狀熔融二氧化矽粉末為佳。 In terms of cerium oxide, cerium oxide powder is preferred, and molten cerium oxide powder is more preferable. The molten cerium oxide powder may, for example, be a spherical molten cerium oxide powder or a crushed molten cerium oxide powder, but it is preferable to use a spherical molten cerium oxide powder from the viewpoint of fluidity.
無機充填劑的平均粒徑，以使用50μm以下的範圍者為佳、使用0.1~30μm的範圍者較佳、使用0.5~25μm的範圍者尤佳。又，平均粒徑，可藉由使用由母集團任意抽出的試料，使用雷射繞射散亂式粒度分佈測定裝置進行測定而導出。 The average particle diameter of the inorganic filler is preferably in the range of 50 μm or less, preferably in the range of 0.1 to 30 μm, and particularly preferably in the range of 0.5 to 25 μm. Further, the average particle diameter can be derived by using a sample arbitrarily extracted by a parent group and measuring it using a laser diffraction type particle size distribution measuring apparatus.
樹脂薄片11以含硬化促進劑為佳。 The resin sheet 11 is preferably a hardening accelerator.
硬化促進劑方面，為使環氧樹脂與酚樹脂的硬化進行者則不被特別限定，例如，三苯基膦、四苯基鏻四苯基硼酸酯等的有機磷系化合物；2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等的咪唑系化合物；等。其中，由混練時溫度上昇硬化反應亦不急遽進行，可良好地製作樹脂薄片11的理由，以2-苯基-4,5-二羥基甲基咪唑為佳。 The hardening accelerator is not particularly limited in order to carry out the hardening of the epoxy resin and the phenol resin, for example, an organophosphorus compound such as triphenylphosphine or tetraphenylphosphonium tetraphenylborate; 2-benzene An imidazole compound such as benzyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole; and the like. Among them, the reason why the resin sheet 11 can be favorably produced by the temperature rise hardening reaction at the time of kneading is preferably 2-phenyl-4,5-dihydroxymethylimidazole.
硬化促進劑的含量，相對環氧樹脂及酚樹脂 的合計100重量份，以0.1~5重量份為佳。 Hardening accelerator content, relative to epoxy resin and phenolic resin The total amount is 100 parts by weight, preferably 0.1 to 5 parts by weight.
樹脂薄片11以含有難燃劑成分為佳。藉由此，可降低零件短路或發熱等而起火時的燃燒擴大。難燃劑組成分方面，例如可使用氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合化金屬氫氧化物等的各種金屬氫氧化物；偶磷氮系難燃劑等。其中，由難燃性、硬化後的強度優異之理由，以偶磷氮系難燃劑為佳、式(1)或式(2)所表示之化合物為佳。 The resin sheet 11 is preferably a component containing a flame retardant. Thereby, it is possible to reduce the short-circuiting of the parts, heat generation, etc., and to expand the combustion at the time of fire. For the composition of the flame retardant, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxide can be used; Agents, etc. Among them, a compound represented by the formula (1) or the formula (2) is preferred because it is excellent in flame retardancy and strength after hardening, and an phosphine-based flame retardant is preferred.
(式中，R1及R2相同或相異，為烷氧基、苯氧基、胺基、羥基、烯丙基或具有由此等的基所構成群所選出的至少1種基的1價的有機基。x為3~25的整數。) (wherein R 1 and R 2 are the same or different and are alkoxy, phenoxy, amine, hydroxy, allyl or at least one selected from the group consisting of The organic base of the valence. x is an integer from 3 to 25.)
(式中，R3及R5相同或相異，為烷氧基、苯氧基、胺基、羥基、烯丙基或具有由此等的基所構成群所選出的至少1種基的1價的有機基。R4為具有烷氧基、苯氧基、胺基、羥基及烯丙基所構成群所選出的至少1種基的2價的有機基。y為3~25的整數。z為3~25的整數。) (wherein R 3 and R 5 are the same or different and each is an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, an allyl group or at least one group selected from the group consisting of such groups; The organic group of the valence. R 4 is a divalent organic group having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, and an allyl group. y is an integer of 3 to 25. z is an integer from 3 to 25.)
R1及R2的烷氧基方面，可舉例如，甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、t-丁氧基等。其中，以碳數4~10的烷氧基為佳。 Examples of the alkoxy group of R 1 and R 2 include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, and a t-butoxy group. Among them, an alkoxy group having 4 to 10 carbon atoms is preferred.
R1及R2的苯氧基方面，可舉例如式(3)所表示之基。 The phenoxy group of R 1 and R 2 may, for example, be a group represented by the formula (3).
(式中，R11為氫、羥基、烷基、烷氧基、縮水甘油基或具有由此等的基所構成群所選出的至少1種基的1價的有機基) (wherein R 11 is hydrogen, a hydroxyl group, an alkyl group, an alkoxy group, a glycidyl group or a monovalent organic group having at least one group selected from the group consisting of such a group)
R11的烷基方面，例如，甲基、乙基、n-丙基、異丙基、n-丁基、iso-丁基、sec-丁基、tert-丁基、戊基、己基、庚基、2-乙基己基、辛基、壬基、癸基、十一基、十二基、十三基、十四基、十五基、十八基等。R11的烷氧基方面，可舉例與R1及R2的烷氧基同樣的基。 The alkyl aspect of R 11 , for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, pentyl, hexyl, g. Base, 2-ethylhexyl, octyl, decyl, decyl, undecyl, dodecyl, thirteenyl, tetradecyl, fifteen, eleven, and the like. The alkoxy group of R 11 may, for example, be the same group as the alkoxy group of R 1 and R 2 .
R1及R2方面，由可得到良好難燃性、硬化後的強度之理由，以苯氧基為佳、式(3)所表示之基更佳。 In the case of R 1 and R 2 , a phenoxy group is preferred, and a group represented by the formula (3) is more preferable because of good flame retardancy and strength after hardening.
x為3~25的整數，但由可得到良好難燃性、硬化後的強度之理由，以3~10為佳、3~4更佳。 x is an integer of 3 to 25, but 3 to 10 is preferable and 3 to 4 is more preferable because of good flame retardancy and strength after hardening.
式(2)中，R3及R5的烷氧基方面，可舉例如甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、t-丁氧基等。其中，以碳數4~10的烷氧基為佳。 In the formula (2), the alkoxy group of R 3 and R 5 may, for example, be a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group or a t-butoxy group. Wait. Among them, an alkoxy group having 4 to 10 carbon atoms is preferred.
R3及R5的苯氧基方面，例如，前述式(3)所表示之基。 The phenoxy group of R 3 and R 5 is, for example, a group represented by the above formula (3).
R3及R5中具有烷氧基、苯氧基、胺基、羥基及烯丙基所構成群所選出的至少1種基的1價的有機基，不特別限定。 The monovalent organic group having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, and an allyl group in R 3 and R 5 is not particularly limited.
R3及R5方面，由可得到良好難燃性、硬化後的強度之理由，以苯氧基為佳、式(3)所表示之基更佳。 In the case of R 3 and R 5 , a phenoxy group is preferred, and a group represented by the formula (3) is more preferable because of good flame retardancy and strength after hardening.
R4之2價的有機基所具有的烷氧基方面，例如，甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、t-丁氧基等。其中，以碳數4~10的烷氧基為佳。 The alkoxy group which the divalent organic group of R 4 has is, for example, a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, a t-butoxy group or the like. Among them, an alkoxy group having 4 to 10 carbon atoms is preferred.
R4之2價的有機基所具有的苯氧基方面，例如，前述式(3)所表示之基。 The phenoxy group which the organic group of the divalent valence of R 4 has, for example, the group represented by the above formula (3).
y為3~25的整數，但由可得到良好難燃性、硬化後的強度之理由，以3~10為佳。 y is an integer of 3 to 25, but it is preferably 3 to 10 because of good flame retardancy and strength after hardening.
z為3~25的整數，但由可得到良好難燃性、硬化後的強度之理由，以3~10為佳。 z is an integer of 3 to 25, but it is preferably 3 to 10 because of good flame retardancy and strength after hardening.
由即使少量仍可發揮難燃效果之觀點，偶磷氮系難燃劑所含有的磷元素的含有率以12重量%以上為 佳。 The content of the phosphorus element contained in the azo-phosphorus-based flame retardant is 12% by weight or more from the viewpoint of exhibiting a flame retardant effect even in a small amount. good.
樹脂薄片11中之難燃劑成分的含量為全有機成分中之10重量%以上為佳、15重量%以上更佳。在10重量%以上，則可得到良好難燃性。樹脂薄片11中之熱塑性樹脂的含量為全有機成分中之30重量%以下為佳、25重量%以下更佳。在30重量%以下，則有硬化物的物性降低(具體上，為玻璃轉化溫度或高溫樹脂強度等的物性的降低)少的傾向。 The content of the flame retardant component in the resin sheet 11 is preferably 10% by weight or more, more preferably 15% by weight or more, based on the total organic component. When it is 10% by weight or more, good flame retardancy can be obtained. The content of the thermoplastic resin in the resin sheet 11 is preferably 30% by weight or less, more preferably 25% by weight or less, based on the total organic component. When it is 30% by weight or less, the physical properties of the cured product tend to decrease (specifically, the physical properties such as the glass transition temperature or the high-temperature resin strength are lowered).
樹脂薄片11以含有矽烷耦合劑為佳。矽烷耦合劑方面，不特別限制，可舉例如3-環氧丙氧基丙基三甲氧基矽烷等。 The resin sheet 11 is preferably a decane coupling agent. The decane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxydecane.
樹脂薄片11中之矽烷耦合劑的含量以0.1~3重量%為佳。上述含量在0.1重量%以上，則可使硬化後的樹脂薄片的強度提高，同時可使吸水率降低。另一方面，上述含量在3重量%以下，則可抑制釋氣的產生。 The content of the decane coupling agent in the resin sheet 11 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, the strength of the resin sheet after curing can be improved, and the water absorption rate can be lowered. On the other hand, when the content is 3% by weight or less, the generation of outgas can be suppressed.
樹脂薄片11以含有顏料為佳。顏料方面，不特別限制，可舉例如碳黑等。 The resin sheet 11 is preferably a pigment. The pigment is not particularly limited, and examples thereof include carbon black.
樹脂薄片11中之顏料的含量以0.1~2重量%為佳。在0.1重量%以上，則可得到良好的標記性。另一方面，在2重量%以下，則可確保硬化後的樹脂薄片的強度。 The content of the pigment in the resin sheet 11 is preferably 0.1 to 2% by weight. When it is 0.1% by weight or more, good labeling properties can be obtained. On the other hand, when it is 2% by weight or less, the strength of the resin sheet after curing can be ensured.
又，樹脂組成物中，除上述的各成分以外，因應必要，可適當添加其他添加劑。 Further, in the resin composition, in addition to the above respective components, other additives may be appropriately added as necessary.
樹脂薄片11之製造方法不特別限定，但以調製混練物，將得到的混練物加工為薄片狀之方法為佳。具體上，藉由將上述的各成分以混合輥、加壓式揉合機、擠出機等的習知混練機進行熔融混練，調製混練物，將得到的混練物加工為薄片狀。混練條件方面，溫度為上述的各成分的軟化點以上為佳，例如30~150℃，考量環氧樹脂的熱硬化性，較佳為40~140℃、更佳為60~120℃。時間例如為1~30分鐘、較佳為5~15分鐘。 The method for producing the resin sheet 11 is not particularly limited, but a method of preparing the kneaded material and processing the obtained kneaded product into a sheet shape is preferred. Specifically, the above-described components are melt-kneaded by a conventional kneading machine such as a mixing roll, a press kneader, or an extruder to prepare a kneaded product, and the obtained kneaded product is processed into a sheet shape. The kneading conditions are preferably at least the softening point of each of the above components, for example, 30 to 150 ° C, and the thermosetting property of the epoxy resin is preferably 40 to 140 ° C, more preferably 60 to 120 ° C. The time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
混練以在減壓條件下(減壓環境下)進行為佳。減壓條件下的壓力之上限，較佳為0.1kg/cm2以下、更較佳為0.05kg/cm2以下。減壓條件下的壓力之下限雖然愈低愈好，但由生產性或物理的界限，亦可為1×10-4kg/cm2以上。藉由此，可防止氣體混入混練物，可抑制得到的混練物中氣孔的產生。 The kneading is preferably carried out under reduced pressure (under reduced pressure). The upper limit of the pressure under reduced pressure is preferably 0.1 kg/cm 2 or less, more preferably 0.05 kg/cm 2 or less. Although the lower limit of the pressure under reduced pressure is as good as possible, it may be 1 × 10 -4 kg / cm 2 or more from the limit of productivity or physicality. Thereby, it is possible to prevent gas from being mixed into the kneaded material, and it is possible to suppress the generation of pores in the obtained kneaded material.
熔融混練後的混練物以不冷卻而維持在高溫狀態加工為佳。加工方法方面，不特別限制，可舉例如平板加壓法、T模頭擠出法、輥壓延法、輥混練法、吹塑擠出法、共擠出法、壓延成形法等。加工溫度以在上述的各成分的軟化點以上為佳，若考量環氧樹脂的熱硬化性及成形性，例如40~150℃、較佳為50~140℃、更佳為70~120℃。 It is preferred that the kneaded material after the melt kneading is maintained at a high temperature without cooling. The processing method is not particularly limited, and examples thereof include a plate press method, a T die extrusion method, a roll calendering method, a roll kneading method, a blow molding method, a coextrusion method, and a calender molding method. The processing temperature is preferably at least the softening point of each component described above. When considering the thermosetting property and moldability of the epoxy resin, for example, it is 40 to 150 ° C, preferably 50 to 140 ° C, more preferably 70 to 120 ° C.
樹脂薄片11的厚度雖不特別限定，但以100~2000μm為佳。在上述範圍內，則可良好地將電子裝 置密封。又，藉由使樹脂薄片為薄型，可使發熱量降低，硬化收縮變得不易產生。結果，可使封裝翹曲量降低，可得到信賴性更高的中空封裝。 The thickness of the resin sheet 11 is not particularly limited, but is preferably 100 to 2000 μm. Within the above range, the electronic device can be well loaded. Sealed. Moreover, by making the resin sheet thin, the calorific value can be lowered, and the hardening shrinkage is less likely to occur. As a result, the package warpage can be reduced, and a highly reliable hollow package can be obtained.
樹脂薄片11可為單層構造或層合2層以上的樹脂薄片之多層構造，但由無層間剝離之虞、薄片厚的均勻性高、易低吸濕化之理由，以單層構造為佳。 The resin sheet 11 may have a single layer structure or a multilayer structure in which two or more layers of resin sheets are laminated. However, it is preferable to use a single layer structure because the layer is not peeled off between layers, the sheet thickness is uniform, and the moisture absorption is easy to be low. .
樹脂薄片11用於SAW(Surface Acoustic Wave)過濾器；壓力感測器、振動感測器等的MEMS(Micro Electro Mechanical Systems)；LSI等的IC、電晶體等的半導體；電容器；電阻；CMOS感測器等的電子裝置的密封。其中，可宜用於需要中空密封的電子裝置(具體上，SAW過濾器、MEMS)之密封，尤宜用於SAW過濾器之密封。 The resin sheet 11 is used for a SAW (Surface Acoustic Wave) filter; a MEMS (Micro Electro Mechanical Systems) such as a pressure sensor or a vibration sensor; an IC such as an LSI or a semiconductor such as a transistor; a capacitor; a resistor; Sealing of electronic devices such as detectors. Among them, it can be suitably used for the sealing of electronic devices (specifically, SAW filters, MEMS) requiring a hollow seal, and is particularly suitable for the sealing of SAW filters.
圖2A~2C各自為本發明的一實施形態之中空封裝製造方法的一步驟模式表示之圖。中空密封方法方面，不特別限制，可用以往習知的方法進行密封。例如，以包覆被附著體上的電子裝置之方式，將未硬化的樹脂薄片11一邊維持中空構造一邊層合(載置)於基板上，接著將樹脂薄片11硬化進行密封的方法等。被附著體方面，不特別限制，例如，印刷配線基板、陶瓷基板、矽基板、金屬基板等。在本實施形態，印刷配線基板12上搭載的SAW晶片13藉由樹脂薄片11進行中空密封，製作中空封裝。 2A to 2C are each a schematic diagram showing a step mode of a method of manufacturing a hollow package according to an embodiment of the present invention. The hollow sealing method is not particularly limited and may be sealed by a conventional method. For example, a method in which the uncured resin sheet 11 is laminated (mounted) on the substrate while maintaining the hollow structure, and then the resin sheet 11 is cured and sealed, for example, in a manner of coating the electronic device on the object to be attached. The adherend is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a tantalum substrate, and a metal substrate. In the present embodiment, the SAW wafer 13 mounted on the printed wiring board 12 is hollow-sealed by the resin sheet 11, and a hollow package is produced.
(SAW晶片搭載基板準備步驟) (SAW wafer mounting substrate preparation step)
在SAW晶片搭載基板準備步驟，準備搭載有複數的SAW晶片13的印刷配線基板12(圖2A做為參考)。SAW晶片13可藉由使形成有指定的梳形電極的壓電結晶以習知的方法進行切割後個片化來形成。SAW晶片13搭載至印刷配線基板12，可使用覆晶焊接機或固晶機等的習知的裝置。SAW晶片13與印刷配線基板12，透過凸塊等的突起電極13a被電接續。又，SAW晶片13與印刷配線基板12間，以不阻礙在SAW過濾器表面的表面彈性波之傳播的方式，維持著中空部分14。SAW晶片13與印刷配線基板12間的距離可適當設定，一般為10~100μm左右。 In the SAW wafer mounting substrate preparation step, the printed wiring substrate 12 on which the plurality of SAW wafers 13 are mounted is prepared (see FIG. 2A for reference). The SAW wafer 13 can be formed by subjecting a piezoelectric crystal having a specified comb-shaped electrode to a dicing process by a conventional method. The SAW wafer 13 is mounted on the printed wiring board 12, and a conventional device such as a flip chip bonding machine or a die bonding machine can be used. The SAW wafer 13 and the printed wiring board 12 are electrically connected to each other through the bump electrodes 13a such as bumps. Further, between the SAW wafer 13 and the printed wiring board 12, the hollow portion 14 is maintained so as not to hinder the propagation of the surface elastic wave on the surface of the SAW filter. The distance between the SAW wafer 13 and the printed wiring board 12 can be appropriately set, and is generally about 10 to 100 μm.
(密封步驟) (sealing step)
在密封步驟，使樹脂薄片11層合於印刷配線基板12以包覆SAW晶片13，將SAW晶片13以樹脂薄片11進行樹脂密封(圖2B做為參考)。樹脂薄片11係用作自外部環境保護SAW晶片13及附隨其之要素的密封樹脂。 In the sealing step, the resin sheet 11 is laminated on the printed wiring substrate 12 to cover the SAW wafer 13, and the SAW wafer 13 is resin-sealed with the resin sheet 11 (refer to FIG. 2B for reference). The resin sheet 11 is used as a sealing resin from the external environmental protection SAW wafer 13 and the elements attached thereto.
將樹脂薄片11層合於印刷配線基板12上的方法不特別限制，可藉由熱壓或層合等習知的方法進行。熱壓條件方面，溫度例如為40~100℃、較佳為50~90℃，壓力例如為0.1~10MPa、較佳為0.5~8MPa，時間例如為0.3~10分鐘、較佳為0.5~5分鐘。又，若考量樹脂薄片11 的對SAW晶片13及印刷配線基板12的密著性及追隨性的提升，以減壓條件下(例如0.1~5kPa)進行加壓為佳。 The method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited, and it can be carried out by a conventional method such as hot pressing or lamination. The hot pressing condition is, for example, 40 to 100 ° C, preferably 50 to 90 ° C, and the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. . Also, if the resin sheet 11 is considered It is preferable to pressurize the SAW wafer 13 and the printed wiring board 12 with pressure and pressure (for example, 0.1 to 5 kPa) under pressure reducing conditions.
(密封體形成步驟) (sealing body forming step)
在密封體形成步驟，使樹脂薄片11進行熱硬化處理形成密封體15(圖2B做為參考)。熱硬化處理的條件方面，加熱溫度較佳為100℃以上、更較佳為120℃以上。另一方面，加熱溫度的上限較佳為200℃以下、更較佳為180℃以下。加熱時間較佳為10分鐘以上、更較佳為30分鐘以上。另一方面，加熱時間的上限較佳為180分鐘以下、更較佳為120分鐘以下。又，因應必要亦可加壓，較佳為0.1MPa以上、更較佳為0.5MPa以上。另一方面，上限較佳為10MPa以下、更較佳為5MPa以下。 In the sealing body forming step, the resin sheet 11 is subjected to a heat hardening treatment to form a sealing body 15 (refer to Fig. 2B for reference). In terms of the conditions of the heat hardening treatment, the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C or lower, more preferably 180 ° C or lower. The heating time is preferably 10 minutes or longer, more preferably 30 minutes or longer. On the other hand, the upper limit of the heating time is preferably 180 minutes or shorter, more preferably 120 minutes or shorter. Further, it may be pressurized if necessary, and is preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, and more preferably 5 MPa or less.
(切割步驟) (cutting step)
接著，可進行密封體15的切割(圖2C做為參考)。藉由此，可得到在SAW晶片13單位的中空封裝18。 Next, the sealing of the sealing body 15 can be performed (see Fig. 2C for reference). Thereby, a hollow package 18 of 13 units in the SAW wafer can be obtained.
(基板實裝步驟) (substrate mounting step)
因應必要，可進行對中空封裝18形成再配線及凸塊，將此實裝於另外的基板(未圖示)的基板實裝步驟。中空封裝18對基板的實裝，可使用覆晶焊接機或固晶機等的習知的裝置。 If necessary, a re-wiring and bumping of the hollow package 18 can be performed, and this can be mounted on a substrate mounting step of another substrate (not shown). For the mounting of the hollow package 18 to the substrate, a conventional device such as a flip chip bonding machine or a die bonding machine can be used.
在第1實施形態，將各搭配成分以揉合機等進行混練，調製混練物，使該混練物擠出成形，形成薄片狀。相對於此，在本實施形態，塗佈使各成分溶解或分散於有機溶劑等的清漆，形成薄片狀。 In the first embodiment, each of the components is kneaded by a kneading machine or the like to prepare a kneaded product, and the kneaded product is extrusion molded to form a sheet. On the other hand, in the present embodiment, a varnish in which each component is dissolved or dispersed in an organic solvent or the like is applied to form a sheet.
使用清漆之具體之製作過程方面，將上述成分及因應必要的其他添加劑依據常法適宜混合，使均勻溶解或者分散在有機溶劑，調製清漆。接著，藉由將上述清漆塗佈於聚酯等支持體上使乾燥，可得到中空密封用樹脂薄片11。接著依需要，為了保護中空密封用樹脂薄片的表面，亦可貼合聚酯薄膜等之剝離薄片。剝離薄片在密封時剝離。 In the specific production process of the varnish, the above-mentioned components and other additives necessary for the varnish are appropriately mixed according to a usual method to uniformly dissolve or disperse in an organic solvent to prepare a varnish. Then, the varnish is applied onto a support such as polyester and dried to obtain a resin sheet 11 for hollow sealing. Then, if necessary, a release sheet such as a polyester film may be bonded to protect the surface of the resin sheet for hollow sealing. The release sheet peeled off upon sealing.
上述有機溶劑方面，不特別限定，可使用以往習知的各種有機溶劑，例如甲基乙基酮、丙酮、環己酮、二噁烷、二乙基酮、甲苯、乙酸乙基酯等。此等可單獨使用或2種以上併用。又通常以使用有機溶劑使清漆的固形分濃度成為30~95重量%的範圍為佳。 The organic solvent is not particularly limited, and various conventional organic solvents such as methyl ethyl ketone, acetone, cyclohexanone, dioxane, diethyl ketone, toluene, ethyl acetate, and the like can be used. These may be used alone or in combination of two or more. Further, it is usually preferred to use an organic solvent in a range of 30 to 95% by weight of the solid content of the varnish.
有機溶劑乾燥後的薄片的厚度，雖不特別限定，由厚度的均勻性與殘存溶劑量的觀點，通常以設定為5~100μm為佳、更較佳為20~70μm。 The thickness of the sheet after the drying of the organic solvent is not particularly limited, but is preferably 5 to 100 μm, more preferably 20 to 70 μm, from the viewpoint of uniformity of thickness and amount of residual solvent.
以下，例示詳細說明本發明的較佳實施例。但，該實施例所記載的材料或搭配量等在未特別限定記載 下，不限定本發明的範圍僅於彼等。 Hereinafter, preferred embodiments of the present invention will be described in detail. However, the materials, the collocation amount, and the like described in the examples are not particularly limited. The scope of the present invention is not limited to the ones.
說明實施例使用的成分。 The ingredients used in the examples are illustrated.
環氧樹脂1：新日鐵化學(股)製的YSLV-80XY(雙酚F型環氧樹脂、環氧當量200g/eq.、軟化點80℃) Epoxy Resin 1: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epoxy equivalent 200 g/eq., softening point 80 ° C)
環氧樹脂2：日本化藥公司製的EPPN-501HY(環氧當量169g/eq.、軟化點60℃) Epoxy Resin 2: EPPN-501HY (epoxy equivalent: 169 g/eq., softening point 60 ° C) manufactured by Nippon Kayaku Co., Ltd.
酚樹脂1：明和化成公司製的MEH-7851-SS(具有聯苯基芳烷基骨架的酚樹脂、羥基當量203g/eq.、軟化點67℃) Phenol Resin 1: MEH-7851-SS (a phenol resin having a biphenyl aralkyl skeleton, a hydroxyl equivalent of 203 g/eq., and a softening point of 67 ° C) manufactured by Minghe Chemical Co., Ltd.
酚樹脂2：明和化成公司製的MEH-7500(酚當量97g/eq.、軟化點111℃) Phenol Resin 2: MEH-7500 manufactured by Minghe Chemical Co., Ltd. (phenol equivalent: 97 g/eq., softening point: 111 ° C)
熱塑性樹脂：(股)KANEKA製的SIBSTER 072T(苯乙烯-異丁烯-苯乙烯嵌段共聚合物) Thermoplastic resin: SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by KANEKA
無機充填劑1：電化學工業公司製的FB-9454FC(熔融球狀二氧化矽、平均粒子徑20μm) Inorganic Filler 1: FB-9454FC (Fused Spherical Cerium Oxide, Average Particle Diameter 20 μm) manufactured by Electrochemical Industry Co., Ltd.
無機充填劑2：(股)Tokuyama製的SE-40(熔融球狀二氧化矽、平均粒子徑38μm) Inorganic filler 2: SE-40 (melt spherical cerium oxide, average particle diameter 38 μm) manufactured by Tokuyama
無機充填劑3：電化學工業公司製的FB-5SDC(熔融球狀二氧化矽、平均粒子徑5μm) Inorganic filler 3: FB-5SDC manufactured by Electrochemical Industry Co., Ltd. (melted spherical ceria, average particle diameter 5 μm)
無機充填劑4：(股)Admatechs製的SO-25R(熔融球狀二氧化矽、平均粒子徑0.5μm) Inorganic Filler 4: SO-25R (melt spherical cerium oxide, average particle diameter 0.5 μm) manufactured by Admatechs
矽烷耦合劑：信越化學公司製的KBM-403(3-環氧丙氧基丙基三甲氧基矽烷) 矽Case coupling agent: KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd.
碳黑：三菱化學公司製的#20 Carbon black: #20 from Mitsubishi Chemical Corporation
難燃劑：伏見製藥所製的FP-100(偶磷氮系難燃劑：式(4)所表示之化合物) Flame Retardant: FP-100 (Azo Phosphorus Flame Retardant: Compound represented by Formula (4)) manufactured by Fushimi Pharmaceutical Co., Ltd.
(式中，m為3~4的整數) (where m is an integer from 3 to 4)
硬化促進劑：四國化成工業公司製的2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑) Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemicals Co., Ltd.
依據表1記載之搭配比，搭配各成分，藉由輥混練機在60~120℃、10分鐘、減壓條件下(0.01kg/cm2)進行熔融混練，調製混練物。接著，使得到的混練物以平板加壓法成形為薄片狀(50mm×50mm)，製作表1所示之厚度的中空密封用樹脂薄片。 According to the mixing ratio described in Table 1, the components were mixed and kneaded by a roll kneading machine at 60 to 120 ° C for 10 minutes under reduced pressure (0.01 kg/cm 2 ) to prepare a kneaded product. Then, the obtained kneaded product was formed into a sheet shape (50 mm × 50 mm) by a flat plate pressing method, and a resin sheet for hollow sealing having a thickness shown in Table 1 was produced.
依據表1記載之搭配比，使各成分溶解或分散在甲基乙基酮與甲苯之1：1混合溶劑，製作固形分40重量%之清漆。接著，在施以脫膜處理的PET薄膜上，塗佈清漆 使溶劑乾燥後的塗膜的厚度成為50μm，之後，以乾燥條件為120℃、3分鐘，使塗膜乾燥，得到厚度50μm的樹脂薄片。將得到的樹脂薄片使用層合機層合至厚度200μm，製作厚度200μm的中空密封用樹脂薄片。 According to the mixing ratio described in Table 1, each component was dissolved or dispersed in a 1:1 mixed solvent of methyl ethyl ketone and toluene to prepare a varnish having a solid content of 40% by weight. Next, apply varnish on the PET film subjected to the release treatment. The thickness of the coating film after drying the solvent was 50 μm, and then the coating film was dried under dry conditions at 120 ° C for 3 minutes to obtain a resin sheet having a thickness of 50 μm. The obtained resin sheet was laminated to a thickness of 200 μm using a laminator to prepare a resin sheet for hollow sealing having a thickness of 200 μm.
(最低熔融黏度) (lowest melt viscosity)
各中空密封用樹脂薄片的最低熔融黏度以TA instrument公司製的黏彈性測定裝置「ARES」(測定條件：測定溫度範圍60~130℃、昇溫速度10℃/min、周波數0.1Hz)追蹤黏度變化時，測定黏度的最低值的結果如表1所示。 The minimum melt viscosity of each resin sheet for hollow sealing was measured by the viscoelasticity measuring device "ARES" manufactured by TA Instruments (measurement conditions: measurement temperature range: 60 to 130 ° C, temperature increase rate: 10 ° C/min, number of cycles: 0.1 Hz). The results of measuring the lowest value of viscosity are shown in Table 1.
(中空密封用樹脂薄片的線膨脹係數的測定) (Measurement of linear expansion coefficient of resin sheet for hollow sealing)
線膨脹係數的測定，使用熱機械分析裝置((股)Rigaku公司製：形式：TMA8310)進行。具體上，將各中空密封用樹脂薄片在150℃進行1小時加熱使熱硬化，該硬化物作成樣本尺寸長度25mm×寬4.9mm×厚度200μm，得到測定試料後，將測定試料設置於薄膜拉伸測定用治具，在拉伸荷重4.9mN、昇溫速度10℃/min之條件下進行測定，得到線膨脹係數。結果如表1所示。 The linear expansion coefficient was measured using a thermomechanical analyzer (manufactured by Rigaku Co., Ltd.: Form: TMA8310). Specifically, each of the resin sheets for hollow sealing was thermally cured at 150 ° C for 1 hour, and the cured product was prepared to have a sample size of 25 mm in length × 4.9 mm in width × 200 μm in thickness, and after the measurement sample was obtained, the measurement sample was placed on the film. The measuring jig was measured under the conditions of a tensile load of 4.9 mN and a heating rate of 10 ° C/min to obtain a linear expansion coefficient. The results are shown in Table 1.
(中空密封用樹脂薄片的儲藏彈性率及玻璃轉化溫度(Tg)之測定) (Measurement of Storage Elasticity and Glass Transition Temperature (Tg) of Resin Sheet for Hollow Sealing)
使各中空密封用樹脂薄片在150℃進行1小時加熱使 熱硬化，由該硬化物將樣本尺寸作成長度25mm×寬4.9mm×厚度200μm，得到測定試料。該測定試料的儲藏彈性率以TA instrument製RSA3進行測定。具體上在-50~300℃溫度域的儲藏彈性率及損失彈性率在周波數1Hz、昇溫速度10℃/min之條件下測定，藉由讀取在20℃的儲藏彈性率(E’)而得。又，藉由算出該測定中tanδ(G”(損失彈性率)/G’(儲藏彈性率))之值，得到玻璃轉化溫度(Tg)。各自之結果如表1所示。 Each of the resin sheets for hollow sealing was heated at 150 ° C for 1 hour. The sample was sized to have a length of 25 mm, a width of 4.9 mm, and a thickness of 200 μm from the cured product to obtain a measurement sample. The storage modulus of the measurement sample was measured by RSA3 manufactured by TA Instruments. Specifically, the storage elastic modulus and the loss elastic modulus in the temperature range of -50 to 300 ° C are measured under the conditions of a cycle number of 1 Hz and a temperature increase rate of 10 ° C/min, by reading the storage elastic modulus (E') at 20 ° C. Got it. Further, the glass transition temperature (Tg) was obtained by calculating the value of tan δ (G" (loss elastic modulus) / G' (storage modulus) in the measurement. The results are shown in Table 1.
(至封裝中空部的樹脂進入性及封裝翹曲的評估) (Evaluation of resin ingress and package warpage to the hollow portion of the package)
製作是形成有鋁梳形電極的以下的樣式的SAW晶片用下述接合條件實裝於長度50mm×寬50mm×厚度0.5mm的玻璃基板的SAW晶片實裝基板。在實施例1~3、5及比較例1~4，SAW晶片與玻璃基板間的間隙寬為30μm、在實施例4為90μm。 A SAW wafer having the following pattern in which an aluminum comb-shaped electrode was formed was fabricated on a SAW wafer mounting substrate of a glass substrate having a length of 50 mm, a width of 50 mm, and a thickness of 0.5 mm by the following bonding conditions. In Examples 1 to 3 and 5 and Comparative Examples 1 to 4, the gap width between the SAW wafer and the glass substrate was 30 μm, and in Example 4, it was 90 μm.
<SAW晶片> <SAW wafer>
晶片尺寸：1.2mm□(厚度150μm) Wafer size: 1.2mm □ (thickness 150μm)
凸塊材質(實施例1~3、5及比較例1~4)：Au凸塊、高度30μm Bump material (Examples 1 to 3, 5 and Comparative Examples 1 to 4): Au bumps, height 30 μm
凸塊材質(實施例4)：焊料(無鉛型)凸塊、高度90μm Bump material (Example 4): Solder (lead-free) bump, height 90μm
凸塊數：6凸塊 Number of bumps: 6 bumps
晶片數：100個(10個×10個) Number of wafers: 100 (10 × 10)
<接合條件> <joining conditions>
裝置：松下電工(股)製 Device: Matsushita Electric Works Co., Ltd.
接合條件：200℃、3N、1sec、超音波輸出2W Bonding conditions: 200 ° C, 3 N, 1 sec, ultrasonic output 2 W
在得到的SAW晶片實裝基板上，在以下所示之加熱加壓條件下、使各中空密封用樹脂薄片以真空加壓貼合。 On the obtained SAW wafer mounting substrate, each of the hollow sealing resin sheets was bonded under vacuum pressure under the heating and pressing conditions shown below.
<貼合條件> <Finishing conditions>
溫度：60℃ Temperature: 60 ° C
加壓力：4MPa Pressure: 4MPa
真空度：1.6kPa Vacuum degree: 1.6kPa
加壓時間：1分鐘 Pressurization time: 1 minute
開放於大氣壓後，在熱風乾燥機中、150℃、1小時的條件，使中空密封用樹脂薄片熱硬化，得到密封體。密封體冷卻至常溫後，自玻璃基板側以電子顯微鏡(KEYENCE公司製、商品名「數位顯微鏡」、200倍)，測定SAW晶片與玻璃基板間的中空部的樹脂的進入量。樹脂進入量為以中空密封用樹脂薄片密封前，自玻璃基板側以電子顯微鏡確認及記憶SAW晶片的端部之位置，密封後再度自玻璃基板側以電子顯微鏡觀察，比較密封前後之觀察像，測定由密封前確認到的SAW晶片的端部進入中空部的樹脂的最大到達距離，將其定為樹脂進入量。樹脂進入量為20μm以下的場合為「○」、超過 20μm的場合為「×」。結果如表1所示。 After opening to atmospheric pressure, the resin sheet for hollow sealing was thermally cured in a hot air dryer at 150 ° C for 1 hour to obtain a sealed body. After the sealing body was cooled to room temperature, the amount of resin entering the hollow portion between the SAW wafer and the glass substrate was measured by an electron microscope (manufactured by Keyence Corporation, "Digital Microscope", 200 times) from the glass substrate side. Before the sealing amount of the resin was sealed with the resin sheet for hollow sealing, the position of the end portion of the SAW wafer was confirmed and stored by an electron microscope from the glass substrate side, and after sealing, the glass substrate side was again observed by an electron microscope, and the observation images before and after the sealing were compared. The maximum reach distance of the resin entering the hollow portion from the end portion of the SAW wafer confirmed before sealing was measured, and this was defined as the resin entry amount. When the amount of resin entering is 20 μm or less, it is "○" and exceeds In the case of 20 μm, it is "X". The results are shown in Table 1.
又，冷卻至常溫的密封體的最大翹曲量使用雷射3維測定裝置(T-TECH公司製、「LS-220-MT50」)，掃瞄樹脂薄單側之表面，進行測定，翹曲量為1mm以下的場合為「○」、超過1mm的場合為「×」。 In addition, the maximum amount of warpage of the sealing body which was cooled to normal temperature was measured by a laser three-dimensional measuring apparatus ("LS-220-MT50" manufactured by T-TECH Co., Ltd.), and the surface of the resin was scanned on one side, and warpage was performed. When the amount is 1 mm or less, it is "○", and when it is more than 1 mm, it is "X".
由表1可明白，在實施例1~5的SAW晶片封裝，中空密封用樹脂薄片的樹脂成分進入中空部及翹曲受到抑制，即使中空部擴大，可製作高品質且高信賴性的中空封裝。在比較例1~4，樹脂進入中空部之量皆超過20μm，且在比較例1、3及4亦產生密封體的翹曲。 As can be seen from Table 1, in the SAW wafer package of the first to fifth embodiments, the resin component of the resin sheet for hollow sealing enters the hollow portion and the warpage is suppressed, and even if the hollow portion is enlarged, a hollow package of high quality and high reliability can be produced. . In Comparative Examples 1 to 4, the amount of the resin entering the hollow portion exceeded 20 μm, and the warpage of the sealing body was also produced in Comparative Examples 1, 3 and 4.
11‧‧‧中空密封用樹脂薄片 11‧‧‧Seal sheet for hollow sealing
12‧‧‧印刷配線基板 12‧‧‧Printed wiring substrate
13‧‧‧SAW晶片 13‧‧‧SAW chip
14‧‧‧中空部分 14‧‧‧ hollow part
15‧‧‧密封體 15‧‧‧ Sealing body
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| JP6422370B2 (en) * | 2015-03-03 | 2018-11-14 | 日東電工株式会社 | Hollow type electronic device sealing sheet and method for manufacturing hollow type electronic device package |
| JP6883937B2 (en) * | 2015-03-19 | 2021-06-09 | 日東電工株式会社 | Manufacturing method of sealing sheet and hollow package |
| JP6283624B2 (en) * | 2015-05-28 | 2018-02-21 | 日東電工株式会社 | Hollow electronic device sealing sheet, hollow electronic device package manufacturing method, and hollow electronic device package |
| CN108475670B (en) * | 2016-04-05 | 2022-05-03 | 琳得科株式会社 | Sheet for manufacturing three-dimensional integrated laminated circuit and method for manufacturing three-dimensional integrated laminated circuit |
| JP2018104649A (en) * | 2016-12-28 | 2018-07-05 | 日東電工株式会社 | Resin sheet |
| EP3706164A4 (en) * | 2017-10-31 | 2021-08-11 | Nagase ChemteX Corporation | Method for producing package structure and sheet used in same |
| US11685102B2 (en) * | 2017-11-08 | 2023-06-27 | Hytech Worldwide, Inc. | Three dimensional thermoforming and lamination |
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| CN109148680A (en) * | 2018-09-26 | 2019-01-04 | 深圳市麦捷微电子科技股份有限公司 | Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture |
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