JP4225162B2 - Sealing film - Google Patents

Sealing film Download PDF

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JP4225162B2
JP4225162B2 JP2003294226A JP2003294226A JP4225162B2 JP 4225162 B2 JP4225162 B2 JP 4225162B2 JP 2003294226 A JP2003294226 A JP 2003294226A JP 2003294226 A JP2003294226 A JP 2003294226A JP 4225162 B2 JP4225162 B2 JP 4225162B2
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film
sealing
resin
weight
molecular weight
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JP2005060584A (en
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禎一 稲田
道夫 増野
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Resonac Corp
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Sealing Material Composition (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

本発明は、保護機能と充てん性を有し、半導体装置、特に、突起状電極を有する半導体チップの保護及び充てんに用いられる封止用フィルムに関するものである。   The present invention relates to a sealing film used for protecting and filling a semiconductor device, in particular, a semiconductor chip having a protruding electrode, having a protective function and filling properties.

従来から、電子機器の小型化・軽量化が進められており、これに伴い基板への高密度実装が要求され、電子機器に搭載する半導体パッケージの小型化、薄型化、軽量化が進められている。従来より、LOC(Lead On Chip)やQFP(Quad Flat Package)等と呼ばれるパッケージがあり、LOCやQFP等のパッケージよりも、さらに小型化・軽量化したCSP(Chip Size Package)やμBGA(Ball Grid Array)等のパッケージの開発が行われている。最近では、半導体素子の回路面が半導体配線基板側に向けられている、いわゆるフェイスダウン型パッケージであるフリップチップ、ウエハレベルCSPなどが開発されている。   Conventionally, electronic devices have been reduced in size and weight, and accordingly, high-density mounting on a substrate has been required, and semiconductor packages mounted on electronic devices have been reduced in size, thickness, and weight. Yes. Conventionally, there are packages called LOC (Lead On Chip), QFP (Quad Flat Package) and the like, and CSP (Chip Size Package) and μBGA (Ball Grid) which are further downsized and lighter than packages such as LOC and QFP. Array) and the like have been developed. Recently, flip-chips and wafer level CSPs, which are so-called face-down packages, in which the circuit surface of a semiconductor element is directed to the semiconductor wiring substrate side have been developed.

上述したパッケージでは、固形のエポキシ樹脂封止材をトランスファー成形法により成形することで封止パッケージを得ていたが、パッケージが薄型あるいは、大型の場合の成形は、難しかった。また、無機フィラーの含有量が増大すると、一般にトランスフアー成形時の溶融粘度が高くなり、成形物のボイドの残存,キヤビテイ充填不良,ワイヤフローおよびステージシフトの増大等と成形物の品質が低下するなどの問題が発生する。   In the above-described package, a sealed package is obtained by molding a solid epoxy resin sealing material by a transfer molding method. However, molding when the package is thin or large is difficult. In addition, when the content of the inorganic filler increases, the melt viscosity at the time of transfer molding generally increases, resulting in a decrease in the quality of the molded product, such as residual voids in the molded product, poor filling of the mold, increased wire flow and stage shift. Problems occur.

また近年、フリップチップやウエハレベルCSPなどで、突起状電極を有するものがあり、その突起部の保護及び突起間の充てんのため、封止材を使用することがあったが、固形のエポキシ樹脂封止材による成形は難しかった。そのため、エポキシ樹脂、無機フィラーを主体としたフィルム状の封止用シートが提案されている(例えば、特許文献1〜3参照)。
特開平5−283456号公報 特開平5−190697号公報 特開平8−73621号公報
In recent years, some flip-chips, wafer level CSPs, and the like have protruding electrodes, and a sealing material is sometimes used to protect the protrusions and fill the protrusions. Molding with a sealing material was difficult. Therefore, a film-like sealing sheet mainly composed of an epoxy resin and an inorganic filler has been proposed (for example, see Patent Documents 1 to 3).
JP-A-5-283456 Japanese Patent Laid-Open No. 5-190697 Japanese Patent Laid-Open No. 8-73621

フィルム状の封止用シートは、パッケージやウエハが大きくなった場合に、そりが大きくなるなどの課題があり、より線膨張係数が小さい封止用フィルムが望まれていた。通常、線膨張係数を低減するためには、樹脂よりも線膨張係数の小さいシリカなどの無機フィラーを多量に充てんすることが行われているが、この方法では、フィルムの可とう性を低下させ、かつ、溶融粘度を増大させ、流動性も低下させるという問題があった。   The film-like sealing sheet has problems such as an increase in warpage when a package or a wafer becomes large, and a sealing film having a smaller linear expansion coefficient has been desired. Usually, in order to reduce the linear expansion coefficient, a large amount of an inorganic filler such as silica having a smaller linear expansion coefficient than that of the resin is filled, but this method reduces the flexibility of the film. In addition, there is a problem that the melt viscosity is increased and the fluidity is also decreased.

これまで、可とう性が高く、流動性が大きく、また溶融粘度と線膨張係数が小さい封止用フィルムは得られていなかった。本発明は、上述した問題を解決するためになされたものであり、Bステージ状態では可とう性や流動性が大きく、また、硬化後は線膨張係数が小さいという特徴を有し、半導体素子表面の保護特性に優れた封止用フィルムを提供することを目的とする。   Until now, a sealing film having high flexibility, high fluidity, and low melt viscosity and low linear expansion coefficient has not been obtained. The present invention has been made in order to solve the above-mentioned problems, and has a feature that flexibility and fluidity are large in a B-stage state, and a linear expansion coefficient is small after curing. An object of the present invention is to provide a sealing film having excellent protective properties.

軟化点が−40℃〜30℃の熱硬化性成分と無機フィラー及び硬化後に島状に相分離する高分子量成分を用いることにより、硬化前の状態での取扱い性が良く、硬化後の線膨張係数が小さいフィルムが得られることを見出した。さらに、上記目的を達成するために、本発明は,次のように構成される。
(1)エポキシ樹脂及び硬化剤を含む熱硬化性成分、硬化前は熱硬化性成分と溶解しており硬化後に島状に相分離する重量平均分子量10万以上のエポキシ基含有アクリルゴムである高分子量成分、及び無機フィラーを含む封止用フィルムであって、無機フィラーが全体の60〜80体積%であり、かつ前記熱硬化性成分100重量部に対し、前記高分子量成分が5〜30重量部含有されていることを特徴とする封止用フィルム。
)着色剤が0.1以上、10重量%以下含有されている(1)に記載の封止用フィルム。
)封止用フィルムのBステージ状態での溶融粘度が、100℃以上、200℃以下の範囲で、10Pa・s以上、10000Pa・s以下であり、少なくとも一方の面のタック強度が25℃以上、120℃以下の範囲で50gf以上であり、かつ、硬化後の線膨張係数が1以上、20ppm/℃以下である(1)〜()いずれかに記載の封止用フィルム。
By using a thermosetting component with a softening point of −40 ° C. to 30 ° C., an inorganic filler, and a high molecular weight component that phase-separates into an island shape after curing, the handling property before curing is good, and the linear expansion after curing It has been found that a film having a small coefficient can be obtained. Furthermore, in order to achieve the above object, the present invention is configured as follows.
(1) A thermosetting component containing an epoxy resin and a curing agent, an epoxy group-containing acrylic rubber having a weight average molecular weight of 100,000 or more that dissolves with the thermosetting component before curing and phase-separates into an island shape after curing. A sealing film containing a molecular weight component and an inorganic filler, wherein the inorganic filler is 60 to 80% by volume of the whole, and the high molecular weight component is 5 to 30% by weight with respect to 100 parts by weight of the thermosetting component. Part of the film for sealing, characterized in that it is contained.
( 2 ) The sealing film according to (1 ), wherein a colorant is contained in an amount of 0.1 to 10% by weight.
( 3 ) The melt viscosity in the B stage state of the sealing film is 10 Pa · s or more and 10,000 Pa · s or less in the range of 100 ° C. or more and 200 ° C. or less, and the tack strength of at least one surface is 25 ° C. As mentioned above, the film for sealing in any one of (1)-( 2 ) which is 50 gf or more in the range of 120 degrees C or less, and the linear expansion coefficient after hardening is 1 or more and 20 ppm / degrees C or less.

本発明により硬化前には適度にタックがあり、取扱い性が良く、硬化後の線膨張係数が小さく、半導体素子表面の保護特性に優れた封止用フィルムを提供することができる。   According to the present invention, it is possible to provide a sealing film that has a suitable tack before curing, good handleability, a low linear expansion coefficient after curing, and excellent protection characteristics on the surface of a semiconductor element.

本発明の封止用フィルムは、硬化前は熱硬化性成分と溶解しており硬化後に島状に相分離する重量平均分子量10万以上の高分子量成分を含有している。本発明の封止用フィルムは、シート状での取扱い性向上のため、硬化前であるBステージ状態では、熱硬化性成分と溶解している高分子量成分を含有している。また、高分子量成分は、硬化後には、線膨張係数を低減するために、島状に相分離する。 The film for sealing of the present invention contains a high molecular weight component having a weight average molecular weight of 100,000 or more, which is dissolved with a thermosetting component before curing and phase-separated into an island shape after curing. The film for sealing of the present invention contains a thermosetting component and a dissolved high molecular weight component in a B-stage state before curing in order to improve the handleability in a sheet form. Further, the high molecular weight component is phase-separated into an island shape after curing in order to reduce the linear expansion coefficient.

硬化前は熱硬化性成分と溶解しており、硬化後に島状に相分離する高分子量成分としては、具体的には溶解性パラメータの値が熱硬化性成分と1以上離れているものが挙げられる。1未満であると硬化後も相分離せず、結果として弾性率の低下、線膨張係数の増加などが起こるため好ましくない。溶解性パラメーターとは、一般にSP(ソルビリティ・パラメーター)とも呼ばれるものであって、樹脂の親水性又は疎水性の度合いを示す尺度であり、樹脂間の相溶性を判断する上で重要な尺度となるものである。溶解性パラメータは、Polym.Eng.Sci.,Vol.14の147〜154頁に記載されているFedorsの方法に準じて計算される値[単位:(MJ/m31/2]などがある。 As the high molecular weight component which is dissolved with the thermosetting component before curing and phase-separates into an island shape after curing, specifically, those having a solubility parameter value of 1 or more from the thermosetting component can be mentioned. It is done. After curing is less than 1 even without phase separation, resulting in lowering of the modulus of elasticity is not preferable because an increase in linear expansion coefficient occurs. The solubility parameter is generally called SP (solubility parameter) and is a scale indicating the degree of hydrophilicity or hydrophobicity of the resin, and is an important scale for judging compatibility between resins. It will be. Solubility parameters are reported in Polym. Eng. Sci. , Vol. 14 [pp. 147 to 154] and a value [unit: (MJ / m 3 ) 1/2 ] calculated in accordance with the Fedors method.

本発明に使用できる高分子量成分としては、硬化前は熱硬化性成分と溶解しており、硬化後に島状に相分離するものであり、かつ、重量平均分子量が10万以上であれば特に制限はない。 The high molecular weight component that can be used in the present invention is particularly limited as long as it is dissolved with the thermosetting component before curing, phase-separates into an island shape after curing, and the weight average molecular weight is 100,000 or more. There is no.

本発明において、使用される高分子量成分の重量平均分子量は、10万以上であり、特に30万〜300万であることが好ましく、50万〜200万であることがより好ましい。重量平均分子量が10万以上あると、シート状またはフィルム状としたときの強度、可とう性、およびタック性が適当であり、また、フロー性が適当のため配線の回路充填性が確保できる。なお、本発明において、重量平均分子量とは、ゲルパーミエーションクロマトグラフィーで測定し、標準ポリスチレン検量線を用いて換算した値を示す。   In the present invention, the weight average molecular weight of the high molecular weight component used is 100,000 or more, particularly preferably 300,000 to 3,000,000, and more preferably 500,000 to 2,000,000. When the weight average molecular weight is 100,000 or more, the strength, flexibility, and tackiness of a sheet or film are appropriate, and the circuit filling property of wiring can be ensured because the flow property is appropriate. In the present invention, the weight average molecular weight is a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.

このような高分子量成分としてはポリイミド樹脂、(メタ)アクリル樹脂、ウレタン樹脂、ポリフェニレンエーテル樹脂、ポリエーテルイミド樹脂、フェノキシ樹脂、変性ポリフェニレンエーテル樹脂、ポリスチレン樹脂、ポリエチレン樹脂、ポリエステル樹脂、ポリアミド樹脂、ブタジエンゴム、アクリルゴム、ポリカーボネート樹脂、ポリフェニレンエーテル樹脂等、及びそれらの混合物が挙げられるが、これらに限定されるものではない。   Such high molecular weight components include polyimide resin, (meth) acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin, polystyrene resin, polyethylene resin, polyester resin, polyamide resin, butadiene Examples thereof include, but are not limited to, rubber, acrylic rubber, polycarbonate resin, polyphenylene ether resin, and mixtures thereof.

その中でも、高分子量成分であるアクリルゴム(ポリマー)などのガラス転移温度(以下「Tg」という)は、−50℃以上、10℃以下であるものが好ましい。Tgが−50℃以上あると、Bステージ状態での封止用フィルムの粘接着剤層のタック性が適当であり、取扱い性に問題を生じないからである。またモノマーを用い、アクリルゴム(ポリマー)などの高分子量成分を製造する場合、その重合方法としては特に制限はなく、たとえば、パール重合、溶液重合などの方法を使用することができる。   Among them, the glass transition temperature (hereinafter referred to as “Tg”) of acrylic rubber (polymer), which is a high molecular weight component, is preferably from −50 ° C. to 10 ° C. This is because when the Tg is −50 ° C. or higher, the tackiness of the adhesive layer of the sealing film in the B-stage state is appropriate, and there is no problem in handleability. Moreover, when manufacturing high molecular weight components, such as an acrylic rubber (polymer), using a monomer, there is no restriction | limiting in particular as the polymerization method, For example, methods, such as pearl polymerization and solution polymerization, can be used.

また、高分子量成分の量は、熱硬化性成分100重量部に対して、5〜30重量部である。5重量部未満であると、硬化前のフィルムの強度が低く、またフィルムの伸びが小さくなり、取扱い性が低下する点で好ましくない。また、30重量部を超えると高分子量成分が島状に相分離せず、連続相になり、流動性が低下するため、好ましくない。   Moreover, the quantity of a high molecular weight component is 5-30 weight part with respect to 100 weight part of thermosetting components. If it is less than 5 parts by weight, the strength of the film before curing is low, the elongation of the film becomes small, and the handling property is lowered, which is not preferable. On the other hand, when the amount exceeds 30 parts by weight, the high molecular weight component does not phase-separate into islands, becomes a continuous phase, and fluidity decreases, which is not preferable.

封止用フィルムの線膨張係数低減と機械的強度の向上、レーザーマーキング性の向上を目的に、本発明の封止用フィルムは、無機フィラーを60〜80体積%含有している。無機フィラーとしては、室温(25℃)での線膨張係数が10ppm以下であることが好ましい。例えば、使用できる無機フィラーとしては、結晶性シリカ、非晶性シリカ、酸化アルミニウム、炭酸カルシウム、炭酸マグネシウム、窒化アルミニウム、窒化ホウ素等が挙げられる。また、無機フィラーの含有量は60〜80体積%とすることが必要であり、65〜75体積%とすることが好ましい。無機フィラーの含有量が60体積%未満になると、線膨張係数が増大するため好ましくなく、無機フィラーの含有量が80体積%を超すと、封止用フィルムがもろくなり成形性が低下し、シリコンウエハとの接着強度の低下等の問題が発生する。   For the purpose of reducing the linear expansion coefficient of the sealing film, improving the mechanical strength, and improving the laser marking property, the sealing film of the present invention contains 60 to 80% by volume of an inorganic filler. As an inorganic filler, it is preferable that the linear expansion coefficient in room temperature (25 degreeC) is 10 ppm or less. For example, examples of the inorganic filler that can be used include crystalline silica, amorphous silica, aluminum oxide, calcium carbonate, magnesium carbonate, aluminum nitride, and boron nitride. Moreover, it is necessary to make content of an inorganic filler into 60-80 volume%, and it is preferable to set it as 65-75 volume%. When the content of the inorganic filler is less than 60% by volume, the linear expansion coefficient increases, which is not preferable. When the content of the inorganic filler exceeds 80% by volume, the sealing film becomes brittle and the moldability decreases, and silicon Problems such as a decrease in adhesive strength with the wafer occur.

本発明の封止用フィルムに用いられる樹脂組成物の熱硬化性成分としては、軟化点が−40℃〜30℃であれば、特に制限はない。使用できる熱硬化性成分としては、エポキシ樹脂、シアネート樹脂、フェノール樹脂及びその硬化剤等が挙げられるが、耐熱性が高い点で、エポキシ樹脂が好ましい。エポキシ樹脂としては、ビスフェノールA型エポキシなどの二官能エポキシ樹脂、フェノールノボラック型エポキシ樹脂やクレゾールノボラック型エポキシ樹脂などのノボラック型エポキシ樹脂などを使用することができる。また、多官能エポキシ樹脂、グリシジルアミン型エポキシ樹脂、複素環含有エポキシ樹脂または脂環式エポキシ樹脂など、一般に知られているものを適用することができる。   There is no restriction | limiting in particular as a thermosetting component of the resin composition used for the film for sealing of this invention, if a softening point is -40 degreeC-30 degreeC. Examples of the thermosetting component that can be used include an epoxy resin, a cyanate resin, a phenol resin, and a curing agent thereof, and an epoxy resin is preferable in terms of high heat resistance. As the epoxy resin, a bifunctional epoxy resin such as bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolak type epoxy resin, or the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

ビスフェノールA型エポキシ樹脂としては、油化シェルエポキシ株式会社製、商品名:エピコート807,815,825,827,828,834,1001,1004,1007,1009、ダウケミカル社製、商品名:DER−330,301,361、東都化成株式会社製、商品名:YD8125,YDF8170などが挙げられる。   As the bisphenol A type epoxy resin, Yuka Shell Epoxy Co., Ltd., trade name: Epicoat 807, 815, 825, 827, 828, 834, 1001, 1004, 1007, 1009, Dow Chemical Co., trade name: DER- 330, 301, 361, manufactured by Tohto Kasei Co., Ltd., trade names: YD8125, YDF8170, and the like.

フェノールノボラック型エポキシ樹脂としては、油化シェルエポキシ株式会社製、商品名:エピコート152,154、日本化薬株式会社製、商品名:EPPN−201、ダウケミカル社製、商品名:DEN−438などが、また、o−クレゾールノボラック型エポキシ樹脂としては、日本化薬株式会社製、商品名:EOCN−102S,103S,104S,1012,1025,1027、東都化成株式会社製、商品名:YDCN701,702,703,704などが挙げられる。   As the phenol novolac type epoxy resin, Yuka Shell Epoxy Co., Ltd., trade name: Epicoat 152,154, Nippon Kayaku Co., Ltd., trade name: EPPN-201, Dow Chemical Company, trade name: DEN-438, etc. However, as an o-cresol novolak type epoxy resin, Nippon Kayaku Co., Ltd., trade name: EOCN-102S, 103S, 104S, 1012, 1025, 1027, Toto Kasei Co., Ltd., trade name: YDCN701,702 , 703, 704 and the like.

多官能エポキシ樹脂としては、油化シェルエポキシ株式会社製、商品名:Epon 1031S、チバスペシャリティーケミカルズ社製、商品名:アラルダイト0163、ナガセ化成株式会社製、商品名:デナコールEX−611,614,614B,622,512,521,421,411,321などが挙げられる。アミン型エポキシ樹脂としては、油化シェルエポキシ株式会社製、商品名:エピコート604、東都化成株式会社製、商品名:YH−434、三菱ガス化学株式会社製、商品名:TETRAD−X,TETRAD−C、住友化学工業株式会社製、商品名:ELM−120などが挙げられる。   As the polyfunctional epoxy resin, Yuka Shell Epoxy Co., Ltd., trade name: Epon 1031S, Ciba Specialty Chemicals, trade name: Araldite 0163, Nagase Kasei Co., Ltd., trade name: Denacol EX-611, 614 614B, 622, 512, 521, 421, 411, 321 and the like. As amine type epoxy resin, Yuka Shell Epoxy Co., Ltd., trade name: Epicoat 604, Toto Kasei Co., Ltd., trade name: YH-434, Mitsubishi Gas Chemical Co., Ltd., trade names: TETRAD-X, TETRAD- C, manufactured by Sumitomo Chemical Co., Ltd., trade name: ELM-120 and the like.

複素環含有エポキシ樹脂としては、チバスペシャリティーケミカルズ社製、商品名:アラルダイトPT810等の、UCC社製、商品名:ERL4234,4299,4221,4206などが挙げられる。   Examples of the heterocyclic ring-containing epoxy resin include a product name: ERL4234, 4299, 4221, 4206, etc., manufactured by UCC, such as a product name: Araldite PT810 manufactured by Ciba Specialty Chemicals.

これらエポキシ樹脂は、単独または2種類以上を組み合わせても、使用することができる。エポキシ樹脂を2種類以上組合せて使用した場合、軟化点が30℃超のエポキシ樹脂を含んでいても、これらの混合物である熱硬化性成分の軟化点が−40℃以上、30℃未満であれば使用することができる。   These epoxy resins can be used alone or in combination of two or more. When two or more types of epoxy resins are used in combination, even if an epoxy resin having a softening point exceeding 30 ° C. is included, the softening point of the thermosetting component that is a mixture of these resins should be −40 ° C. or higher and lower than 30 ° C. Can be used.

また、熱硬化性成分に含まれるエポキシ樹脂の硬化剤としては、通常用いられている公知の硬化剤を使用することができる。たとえば、アミン類、ポリアミド、酸無水物、ポリスルフィド、三フッ化ホウ素、ビスフェノールA、ビスフェノールF,ビスフェノールSのようなフェノール性水酸基を1分子中に2個以上有するビスフェノール類、フェノールノボラック樹脂、ビスフェノールAノボラック樹脂またはクレゾールノボラック樹脂などのフェノール樹脂などが挙げられる。   Moreover, as the hardening | curing agent of the epoxy resin contained in a thermosetting component, the well-known hardening | curing agent used normally can be used. For example, bisphenols having two or more phenolic hydroxyl groups in one molecule such as amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S, phenol novolac resins, bisphenol A Examples thereof include phenolic resins such as novolak resin or cresol novolak resin.

特に吸湿時の耐電食性に優れる点で、フェノールノボラック樹脂、ビスフェノールAノボラック樹脂またはクレゾールノボラック樹脂などのフェノール樹脂が好ましい。好ましいフェノール樹脂系硬化剤としては、たとえば、大日本インキ化学工業株式会社製、商品名:フェノライトLF2882、フェノライトLF2822、フェノライトTD−2090、フェノライトTD−2149、フェノライトVH−4150、フェノライトVH4170などが挙げられる。   Phenol resins such as phenol novolac resin, bisphenol A novolak resin, and cresol novolac resin are particularly preferable in terms of excellent electric corrosion resistance when absorbing moisture. Preferable phenol resin curing agents include, for example, Dainippon Ink & Chemicals, Inc., trade names: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenolite Light VH4170 etc. are mentioned.

また、本発明の封止用フィルムは、上記の熱硬化性成分と高分子量成分の他に、硬化促進剤、触媒、添加剤、カップリング剤等を含有していてもよい。また、封止用フィルムは、波長300〜1100nmの領域の透過率が10%以下であることが好ましく、そのためには微細な相分離構造を有し、不透明であることが好ましい。したがって封止用フィルムは、着色剤を含むことが好ましく、着色剤としては、例えば、カーボンブラック、黒鉛、チタンカーボン、二酸化マンガン、フタロシアニン系等の顔料及び染料を用いることができる。封止用フィルムに含有する着色剤の含有量は、0.1〜10重量%が好ましく、より好ましくは0.5〜2.0重量%である。着色剤の含有量が0.1重量%未満になると、フィルムに色が付かずレーザーマーキング部の視認性が悪くなり、逆に、着色剤の含有量が10重量%を超すと、イオン性不純物の増加、フィルム延性の低下または半導体素子との接着強度の低下等の問題が発生してしまう。   Moreover, the film for sealing of this invention may contain a hardening accelerator, a catalyst, an additive, a coupling agent, etc. other than said thermosetting component and high molecular weight component. Further, the sealing film preferably has a transmittance of 10% or less in a wavelength region of 300 to 1100 nm. For that purpose, it preferably has a fine phase separation structure and is opaque. Therefore, the sealing film preferably contains a colorant, and as the colorant, for example, carbon black, graphite, titanium carbon, manganese dioxide, phthalocyanine-based pigments and dyes can be used. As for content of the coloring agent contained in the film for sealing, 0.1 to 10 weight% is preferable, More preferably, it is 0.5 to 2.0 weight%. When the content of the colorant is less than 0.1% by weight, the film is not colored and the visibility of the laser marking part is deteriorated. Conversely, when the content of the colorant exceeds 10% by weight, ionic impurities This causes problems such as an increase in film thickness, a decrease in film ductility, or a decrease in adhesive strength with semiconductor elements.

また、レーザーマーキングに使用されるレーザーは、YAGレーザーであることが多いため、着色剤としてYAGレーザーにより揮発し易いカーボンブラックを使用することが好ましい。   Further, since the laser used for laser marking is often a YAG laser, it is preferable to use carbon black that is easily volatilized by the YAG laser as a colorant.

本発明の封止用フィルムは、基材層に、前記熱硬化性成分、前記高分子量成分、前記着色剤及び前記無機フィラーを含む樹脂ワニスを塗工乾燥して作成することが好ましく、これに用いられる基材層としては、特に制限されることなく従来公知のものを使用することができる。なお、樹脂ワニスは、シクロヘキサノンなどの溶剤を加えて攪拌混合し、得ることができる。   The sealing film of the present invention is preferably prepared by applying and drying a resin varnish containing the thermosetting component, the high molecular weight component, the colorant and the inorganic filler on the base material layer. As a base material layer used, a conventionally well-known thing can be used without being restrict | limited in particular. The resin varnish can be obtained by adding a solvent such as cyclohexanone and stirring and mixing.

例えば、用いられる基材層としては、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルムなどのプラスチックフィルム等が挙げられる。また、必要に応じて基材層の表面に、プライマー塗布、UV処理、コロナ放電処理、研磨処理、エッチング処理、離型処理等の表面処理を行っても良い。   For example, as a base material layer used, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film, etc. are mentioned. Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, mold release treatment and the like may be performed on the surface of the base material layer as necessary.

基材層が粘着性を有していてもよく、また、基材層の片面に粘着剤層を設けても良い。また粘着剤層は、低分子量成分(テルペン化合物等の粘着付与剤)とTgを調整した高分子量成分を含む適度なタック強度を有する樹脂ワニスを塗布乾燥することで形成可能である。   The base material layer may have adhesiveness, and an adhesive layer may be provided on one side of the base material layer. The pressure-sensitive adhesive layer can be formed by applying and drying a resin varnish having an appropriate tack strength including a low molecular weight component (tackifier such as a terpene compound) and a high molecular weight component adjusted for Tg.

封止用フィルムの厚みは、特に制限はないが、樹脂層、基材層ともに5〜1000μmが好ましい。5μmより薄いと応力緩和効果が乏しくなる傾向があり、1000μmより厚いと経済的でなくなる上に、半導体装置の小型化の要求に応えられない。   Although there is no restriction | limiting in particular in the thickness of the film for sealing, 5-1000 micrometers is preferable for both a resin layer and a base material layer. If the thickness is less than 5 μm, the stress relaxation effect tends to be poor. If the thickness is more than 1000 μm, it is not economical, and the demand for miniaturization of the semiconductor device cannot be met.

また、封止用フィルムに対し、保護フィルムを用いることが好ましく、保護フィルムとしては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルムなどのプラスチックフィルム等が挙げられる。また、必要に応じてプライマー塗布、UV処理、コロナ放電処理、研磨処理、エッチング処理、離型処理等の表面処理を行っても良い。なお前記基材層を保護フィルムとして、使用してもかまわないし、封止用フィルムの片面すなわち基材層の反対側に保護フィルムを設置してもかまわない。   Moreover, it is preferable to use a protective film for the sealing film, and examples of the protective film include plastics such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. A film etc. are mentioned. Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, mold release treatment and the like may be performed as necessary. In addition, you may use the said base material layer as a protective film, and you may install a protective film in the single side | surface of the film for sealing, ie, the other side of a base material layer.

なお本発明の封止フィルムは、Bステージ状態での溶融粘度が、100℃以上、200℃以下の範囲で、10Pa・s以上、10000Pa・s以下であることが、フリップチップやウエハレベルCSPなどの突起状電極の突起部の保護及び突起間の充てんのため好ましく、かつ、硬化後の線膨張係数が1以上、20ppm以下であることが、パッケージやウエハに使用した場合でも封止フィルムのそりが小さくなる点で好ましい。なお、溶融粘度は、平行平板プラストメータ法により測定した。溶融粘度が10000Pa・sを超すと、ボイドの残存やキヤビテイ充填不良等が発生し,接続信頼性が低下する。また溶融粘度が10Pa・s未満では、流動性が大きすぎ、成型品の封止樹脂の厚みにバラツキが発生し、接続信頼性が低下するなど好ましくない。   The sealing film of the present invention has a melt viscosity in the B-stage state of 10 Pa · s or more and 10000 Pa · s or less in the range of 100 ° C. or more and 200 ° C. or less, such as flip chip or wafer level CSP. It is preferable for the protection of the protruding portion of the protruding electrode and the filling between the protrusions, and that the linear expansion coefficient after curing is 1 or more and 20 ppm or less, even when used for a package or wafer, the warp of the sealing film Is preferable in that it becomes smaller. The melt viscosity was measured by a parallel plate plastometer method. If the melt viscosity exceeds 10000 Pa · s, voids remain, poorly charged, etc., and connection reliability decreases. On the other hand, if the melt viscosity is less than 10 Pa · s, the fluidity is too high, the thickness of the sealing resin of the molded product varies, and the connection reliability is lowered.

また、本発明の封止用フィルムは、表裏いずれか、または両方の直径5.1mmプローブ測定による25〜120℃におけるタック強度が50gf以上であることがウエハなどへのラミネートが容易にできる点で好ましい。80gfであることがより好ましく、100gf以上であることがさらに好ましい。   In addition, the sealing film of the present invention can be easily laminated to a wafer or the like if the tack strength at 25 to 120 ° C. is 50 gf or more as measured by a probe measurement with a diameter of either 5.1 mm or both. preferable. 80 gf is more preferable, and 100 gf or more is further preferable.

封止用フィルムの使用方法としては、従来の固形状または液状封止材が使用されていた用途と同様の方法が考えられる。例えば、半導体チップや部品を実装した基板上に基材層(基材フィルム)つきの封止用フィルムを熱板プレスやラミネータなどを使用して積層した後、加熱硬化した後、基材層(基材フィルム)をはく離するか、基材層(基材フィルム)をはく離した後、加熱硬化するなどの方法を取る。この際、半導体チップ周辺に空隙が残らないように積層することが可能である。しかし、高周波用途のフリップチップ実装の場合などは、半導体チップや部品の下部に、あえて空隙が残るように積層することも可能である。図1に示したのは、本発明の封止用フィルムを用いて、前記の方法により作製した半導体装置の断面である。   As a method for using the sealing film, a method similar to that used for a conventional solid or liquid sealing material can be considered. For example, a sealing film with a base material layer (base material film) is laminated on a substrate on which a semiconductor chip or component is mounted using a hot plate press or a laminator, and then heated and cured. The material film) is peeled off or the base material layer (base material film) is peeled off, followed by heat curing. At this time, it is possible to stack the layers so that no gaps remain around the semiconductor chip. However, in the case of flip chip mounting for high-frequency applications, etc., it is also possible to laminate so as to leave a gap at the bottom of the semiconductor chip or component. FIG. 1 shows a cross section of a semiconductor device manufactured by the above method using the sealing film of the present invention.

半導体チップや部品を実装した基板2枚を実装した面が向かい合うように封止用フィルムを挟んで熱板プレスやラミネータなどを使用して積層、加熱硬化するなどの方法を取ってもよい。図2に示したのは、本発明の封止用フィルムを用いて、前記の方法により作製した半導体装置の断面である。   A method of laminating using a hot plate press, a laminator, etc., and heat-curing with a sealing film sandwiched so that the surfaces on which two substrates on which semiconductor chips and components are mounted are opposed may be taken. FIG. 2 shows a cross section of a semiconductor device manufactured by the above method using the sealing film of the present invention.

また、図3に示すように半導体チップの回路を形成していない面に、封止用フィルムを積層することも可能である。   Moreover, as shown in FIG. 3, it is also possible to laminate | stack the sealing film on the surface in which the circuit of a semiconductor chip is not formed.

また、図4に示すようにバンプを形成した半導体チップに基材層(基材フィルム)つきの封止用フィルムを熱板プレスを使用して積層した後、基材層(基材フィルム)をはく離し、温度140〜170℃で、1〜5時間加熱硬化するなどの方法を取り、必要に応じて表面研磨などの工程をとることができる。この場合、凹凸を充填するために温度、圧力、時間を適切に設定することが必要であり、例えば、100μmの凹凸を130μmの本発明の封止用フィルムで充填するためには、温度100〜150℃、圧力0.4〜1MPa、1〜10sが好ましく、4〜6sがより好ましい。なお、封止用フィルムをラミネータなどを使用して積層してもよく、加熱硬化した後、基材層(基材フィルム)をはく離しても良い。   Also, as shown in FIG. 4, a sealing film with a base layer (base film) is laminated on a semiconductor chip on which bumps are formed using a hot plate press, and then the base layer (base film) is peeled off. Then, a method such as heat curing at a temperature of 140 to 170 ° C. for 1 to 5 hours can be taken, and a step such as surface polishing can be taken as necessary. In this case, it is necessary to appropriately set the temperature, pressure, and time for filling the unevenness. For example, in order to fill the 100 μm unevenness with the 130 μm sealing film of the present invention, the temperature 100 to 150 ° C., pressure 0.4 to 1 MPa, 1 to 10 s are preferable, and 4 to 6 s are more preferable. The sealing film may be laminated using a laminator or the like, and after heat curing, the base material layer (base material film) may be peeled off.

以下、本発明の封止用フィルムについて、実施例により、具体的に説明するが、本発明は,これに限定されるものではない。   Hereinafter, although the film for sealing of the present invention will be specifically described with reference to examples, the present invention is not limited thereto.

熱硬化性成分(エポキシ樹脂)としてビスフェノールF型エポキシ樹脂(エポキシ当量175、東都化成株式会社製のYD−8170を使用)60重量部、熱硬化性成分(硬化剤)としてビスフェノールAノボラック樹脂(大日本インキ化学工業株式会社製のLF−2882を使用)35重量部、無機フィラーとしてシリカフィラー(株式会社龍森製のTSS−6を使用)500重量部、着色剤としてカーボンブラック2重量部、高分子量成分として、エポキシ基含有アクリルゴム(重量平均分子量70万、帝国化学産業株式会社製のHTR−860P−3)10重量部、硬化促進剤として1−シアノエチル−2−フェニルイミダゾール(キュアゾール2PZ−CNを使用)0.5重量部からなる成分に溶剤としてシクロヘキサノンを1700重量部加えて攪拌混合し、樹脂ワニスを得た。 Bisphenol F type epoxy resin (epoxy equivalent 175, YD-8170 manufactured by Toto Kasei Co., Ltd.) 60 parts by weight as thermosetting component (epoxy resin), bisphenol A novolac resin (large) as thermosetting component (curing agent) 35 parts by weight of LF-2882 manufactured by Nippon Ink Chemical Co., Ltd., 500 parts by weight of silica filler (using TSS-6 manufactured by Tatsumori Co., Ltd.) as an inorganic filler, 2 parts by weight of carbon black as a colorant, high As molecular weight component, epoxy group-containing acrylic rubber ( weight average molecular weight 700,000, HTR-860P-3 manufactured by Teikoku Chemical Industry Co., Ltd.) 10 parts by weight, 1-cyanoethyl-2-phenylimidazole (Curesol 2PZ-CN) as curing accelerator 170) cyclohexanone as a solvent in a component consisting of 0.5 parts by weight It stirred mixed with parts by weight to obtain a resin varnish.

得られた樹脂ワニスを基材層である離型剤付きのベースフィルム(帝人株式会社製ピューレックスA31)上に塗工し、90℃、10分、120℃、20分乾燥して、厚み130μmの封止用フィルムを得た。この場合の無機フィラーの体積分率は69%であった。なお、硬化物の断面をSEMで観察し、海島構造を調査し、島成分がゴム相であることを確認した。   The obtained resin varnish was coated on a base film with a release agent as a base material layer (Purex A31 manufactured by Teijin Limited), dried at 90 ° C., 10 minutes, 120 ° C., 20 minutes, and a thickness of 130 μm. A film for sealing was obtained. In this case, the volume fraction of the inorganic filler was 69%. In addition, the cross section of hardened | cured material was observed with SEM, the sea island structure was investigated, and it confirmed that an island component was a rubber phase.

(比較例1)
フィラーの量を250重量部にした他は、実施例1と同様に封止用フィルムを作製した。この場合の無機フィラーの体積分率は54%であった。
(Comparative Example 1)
A sealing film was produced in the same manner as in Example 1 except that the amount of the filler was 250 parts by weight. In this case, the volume fraction of the inorganic filler was 54%.

(比較例2)
熱硬化性成分(エポキシ樹脂)としてビスフェノールF型エポキシ樹脂(エポキシ当量175、東都化成株式会社製のYD−8170を使用)50重量部、熱硬化性成分(硬化剤)としてビスフェノールAノボラック樹脂(大日本インキ製のLF−2882を使用)25重量部、エポキシ基含有アクリルゴム(重量平均分子量70万、帝国化学産業株式会社製のHTR−860P−3)30重量にした他は、実施例1と同様に封止用フィルムを作製した。なお、硬化物の断面をSEMで観察し、海島構造を調査した結果、ゴム相は島状に分離せず連続相になっていることを確認した。
(Comparative Example 2)
Bisphenol F type epoxy resin (epoxy equivalent 175, using YD-8170 manufactured by Tohto Kasei Co., Ltd.) 50 parts by weight as a thermosetting component (epoxy resin), bisphenol A novolak resin (large) as a thermosetting component (curing agent) Example 1 except that 25 parts by weight of LF-2882 made by Nippon Ink and 30 weights of epoxy group-containing acrylic rubber ( weight average molecular weight 700,000, HTR-860P-3 made by Teikoku Chemical Industry Co., Ltd.) were used. Similarly, a sealing film was produced. In addition, as a result of observing the cross section of hardened | cured material with SEM and investigating the sea-island structure, it confirmed that the rubber phase did not isolate | separate into an island shape but was a continuous phase.

(半導体装置の作製)
バンプを形成した半導体チップに、実施例1、比較例1及び比較例2で作製した基材層(基材フィルム)つきの封止用フィルムを、温度130℃、圧力0.7MPa、5sの条件で熱板プレスを使用して積層した後、基材層(基材フィルム)をはく離した後、170℃、1時間加熱硬化し、半導体装置を作製した。
(Fabrication of semiconductor devices)
The sealing film with the base material layer (base material film) produced in Example 1, Comparative Example 1 and Comparative Example 2 was applied to the semiconductor chip on which the bump was formed under the conditions of a temperature of 130 ° C., a pressure of 0.7 MPa, and 5 s. After laminating using a hot plate press, the base material layer (base material film) was peeled off and then heat-cured at 170 ° C. for 1 hour to produce a semiconductor device.

この封止用フィルムのBステージ状態、Cステージ状態での各種特性及び前記半導体装置の特性を測定した。測定にあたっては、下記の方法を用いた。評価結果を表1に示した。
(測定方法)
(1)弾性率(貯蔵弾性率)
170℃、1時間加熱硬化した封止用フィルムの貯蔵弾性率を動的粘弾性測定装置(レオロジ社製、DVE−V4)を用いて測定した(サンプルサイズ:長さ20mm、幅4mm、膜厚80μm、昇温速度5℃/min、引張りモード、10Hz、自動静荷重)。
(2)タック強度
Bステージ状態の封止用フィルムのタック強度を、レスカ株式会社製タッキング試験機を用いて、JISZ0237−1991に記載の方法(プローブ直径5.1mm、引き剥がし速度10mm/s、接触荷重100gf/cm、接触時間1s)により、80℃で測定した。
(3)対チップピール強度(接着特性)
120℃のホットプレート上で、封止用フィルムにチップ(5mm角)及び金めっき基板(銅箔付フレキ基板電解金めっき(Ni:5μm、Au:0.3μm))を積層し、130℃、30min+170℃、1hキュアした。この試料のついて260℃でのピール強度を測定した。
(4)線膨張係数
線膨張係数は、170℃1時間加熱硬化した封止用フィルムについて、熱機械分析装置を用いて、毎分5℃の昇温速度で試料の伸びを測定し、25℃から150℃の伸びから、平均線膨張係数を求めた。
(5)はんだ耐熱性
作製した半導体装置を85℃、湿度85%で48時間処理した後、265℃のはんだ漕に1分間フロートし、ふくれ、剥離の有無を調べた。
(6)溶融粘度
封止用フィルムの溶融粘度は、下記の平行平板プラストメータ法により測定、算出した値を用いた。すなわち、接着シートを8枚ラミネートし、厚さ約400μmのフィルムを作製する。これを直径11.3mmの円形に打ち抜いたものを試料とし、160℃において、荷重2.5kgfで5秒間加圧し、加圧前後の試料の厚みから、式1を用いて溶融粘度を算出した。
Various characteristics of the sealing film in the B stage state and C stage state and the characteristics of the semiconductor device were measured. In the measurement, the following method was used. The evaluation results are shown in Table 1.
(Measuring method)
(1) Elastic modulus (storage elastic modulus)
The storage elastic modulus of the sealing film heated and cured at 170 ° C. for 1 hour was measured using a dynamic viscoelasticity measuring device (DVE-V4, manufactured by Rheology) (sample size: length 20 mm, width 4 mm, film thickness). 80 μm, heating rate 5 ° C./min, tensile mode, 10 Hz, automatic static load).
(2) Tack strength The tack strength of the sealing film in the B-stage state is measured according to the method described in JISZ0237-1991 (probe diameter 5.1 mm, peeling speed 10 mm / s, It was measured at 80 ° C. with a contact load of 100 gf / cm 2 and a contact time of 1 s.
(3) Chip peel strength (adhesive properties)
On a hot plate at 120 ° C., a chip (5 mm square) and a gold plating substrate (flexible substrate electrolytic gold plating with copper foil (Ni: 5 μm, Au: 0.3 μm)) are laminated on a sealing film, 130 ° C., Cured for 30 min + 170 ° C. for 1 h. The peel strength at 260 ° C. was measured for this sample.
(4) Linear expansion coefficient The linear expansion coefficient was determined by measuring the elongation of a sample at a heating rate of 5 ° C. per minute using a thermomechanical analyzer for a sealing film heated and cured at 170 ° C. for 1 hour. From the elongation at 150 ° C., the average coefficient of linear expansion was determined.
(5) Solder heat resistance The prepared semiconductor device was treated at 85 ° C. and humidity 85% for 48 hours, and then floated on a soldering iron at 265 ° C. for 1 minute to examine whether blistering or peeling occurred.
(6) Melt viscosity The melt viscosity of the film for sealing was a value measured and calculated by the following parallel plate plastometer method. That is, eight adhesive sheets are laminated to produce a film having a thickness of about 400 μm. This was punched into a circle having a diameter of 11.3 mm, and the sample was pressurized at 160 ° C. with a load of 2.5 kgf for 5 seconds. The melt viscosity was calculated using Equation 1 from the thickness of the sample before and after pressing.

Figure 0004225162
(式中、Z0は荷重を加える前の接着シートの厚さ、Zは荷重を加えた後の接着シートの厚さ、Vは接着シートの体積、Fは加えた荷重、tは荷重を加えた時間を表す。)
Figure 0004225162
(In the formula, Z0 is the thickness of the adhesive sheet before the load is applied, Z is the thickness of the adhesive sheet after the load is applied, V is the volume of the adhesive sheet, F is the applied load, and t is the applied load. Represents time.)

Figure 0004225162
Figure 0004225162

表1に示したように、無機フィラーの体積分率が54%である比較例1の線膨張係数は、半導体チップの線膨張係数(4ppm)との差が大きい。そのため、そりが生じやすく、チップと基板(半導体装置)のふくれ剥離が発生するなど、はんだ耐熱性が低下した。また、熱硬化性成分に対して高分子量成分が過剰な比較例2(エポキシ樹脂100重量部に対して高分子量成分40重量部)の線膨張係数は大きく、チップと基板(半導体装置)のふくれ剥離が発生するなど、半導体装置のはんだ耐熱性など信頼性が低下した。それに対し、実施例1の線膨張係数は小さく、また半導体装置の信頼性も良好であった。   As shown in Table 1, the linear expansion coefficient of Comparative Example 1 in which the volume fraction of the inorganic filler is 54% is greatly different from the linear expansion coefficient (4 ppm) of the semiconductor chip. For this reason, warpage is likely to occur, and the heat resistance of the solder is reduced, such as chipping and chipping of the substrate (semiconductor device). Further, the linear expansion coefficient of Comparative Example 2 in which the high molecular weight component is excessive with respect to the thermosetting component (40 weight parts of the high molecular weight component with respect to 100 weight parts of the epoxy resin) is large, and the chip and the substrate (semiconductor device) are swollen. Reliability such as solder heat resistance of the semiconductor device decreased due to peeling. In contrast, the linear expansion coefficient of Example 1 was small, and the reliability of the semiconductor device was good.

本発明の封止用フィルムを用いた半導体装置の断面図。Sectional drawing of the semiconductor device using the film for sealing of this invention. 本発明の封止用フィルムを用いた半導体装置の断面図。Sectional drawing of the semiconductor device using the film for sealing of this invention. 本発明の封止用フィルムを半導体チップに貼付けた後の断面図。Sectional drawing after sticking the film for sealing of this invention on a semiconductor chip. (a)〜(e)は、本発明の基材層(基材フィルム)つきの封止フィルムを用いた半導体装置の製造工程の断面図。(A)-(e) is sectional drawing of the manufacturing process of the semiconductor device using the sealing film with the base material layer (base material film) of this invention.

符号の説明Explanation of symbols

1…部品
2…配線基板
3…封止用フィルム
4…ダイボンド材
5…半導体チップ
6…ワイヤ
7…接続バンプ
8…空隙
9…はんだボール
10…バンプ付半導体チップ
11…基材層(基材フィルム)
12…熱板

DESCRIPTION OF SYMBOLS 1 ... Component 2 ... Wiring board 3 ... Film for sealing 4 ... Die bond material 5 ... Semiconductor chip 6 ... Wire 7 ... Connection bump 8 ... Space | gap 9 ... Solder ball 10 ... Semiconductor chip 11 with bump ... Base material layer (base material film) )
12 ... Hot plate

Claims (2)

エポキシ樹脂及び硬化剤を含む熱硬化性成分、硬化前は熱硬化性成分と溶解しており硬化後に島状に相分離する重量平均分子量10万以上のエポキシ基含有アクリルゴムである高分子量成分、及び無機フィラーを含む封止用フィルムであって、無機フィラーが全体の60〜80体積%であり、かつ前記熱硬化性成分100重量部に対し、前記高分子量成分が5〜30重量部含有されていることを特徴とする封止用フィルム。 A thermosetting component including an epoxy resin and a curing agent , a high molecular weight component which is an epoxy group-containing acrylic rubber having a weight average molecular weight of 100,000 or more, which is dissolved with the thermosetting component before curing and phase-separated into an island shape after curing; And an inorganic filler, wherein the inorganic filler is 60 to 80% by volume of the whole, and the high molecular weight component is contained in an amount of 5 to 30 parts by weight with respect to 100 parts by weight of the thermosetting component. A sealing film characterized by comprising: 着色剤が、0.1以上、10重量%以下含有されている請求項1に記載の封止用フィルム。 The sealing film according to claim 1, wherein the colorant is contained in an amount of 0.1 to 10% by weight.
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