CN105074906A - Hollow sealing resin sheet and production method for hollow package - Google Patents
Hollow sealing resin sheet and production method for hollow package Download PDFInfo
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- CN105074906A CN105074906A CN201480019057.4A CN201480019057A CN105074906A CN 105074906 A CN105074906 A CN 105074906A CN 201480019057 A CN201480019057 A CN 201480019057A CN 105074906 A CN105074906 A CN 105074906A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
Abstract
Provided are a hollow sealing resin sheet which is capable of maintaining a hollow structure even if the width of the void in the hollow structure is approximately 100 [mu]m and is capable of preparing a hollow package having high reliability by preventing warping of the package, and a production method for a hollow package. This hollow sealing resin sheet includes an inorganic filler in an amount of 70 vol% to 90 vol% inclusive, and has a minimum melt viscosity measured by dynamic mechanical analysis at 60-130 DEG C of 2000 Pa.s to 20000 Pa.s inclusive, a storage modulus at 20 DE G of 1 GPa to 20 GPa inclusive following heat curing for one hour at 150 DE G, and a linear expansion coefficient at or below the glass transition temperature of 5 ppm/K to 15 ppm/K inclusive following heat curing for one hour at 150 DEG C.
Description
Technical field
The present invention relates to the manufacture method of hollow sealing resin sheet and hollow package body.
Background technology
In the making of electron device package body, representational is adopt following order: by being fixed on one or more sealing resins sealings used for electronic device of substrate etc. via projection etc., cut as required in the mode of the packaging body becoming electronic device unit to seal.As such sealing resin, sometimes use the sealing resin of sheet.
In recent years, together with semiconductor package body, the exploitation that SAW (SurfaceAcousticWave) filter, CMOS (ComplementaryMetalOxideSemiconductor) transducer, acceleration transducer etc. are called as the microelectronic component of MEMS continues to carry out.The packaging body obtained by these electronic component encapsulations has the hollow structure of mobility for guaranteeing surface elasticity wave propagation, the maintenance of optics system, the movable member of electronic device separately usually.This hollow structure is mainly with the form design in the space between substrate and element.When sealing, in order to ensure the operating reliability of movable member, the connection reliability of element, need to seal with maintaining hollow structure.Such as, the technology using gelatinous curable resin sheet function element to be carried out to hollow casting mold is described in patent documentation 1.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2006-19714 publication
Summary of the invention
the problem that invention will solve
About the projection providing above-mentioned hollow structure, consider situation that the less cost of its size is higher, requirement for the expansion of the hollow structure of complicated, the Composite of above-mentioned movable member, can predict can adopt from now on increases bump diameter to expand the countermeasure in space.In the technology that above-mentioned patent documentation 1 is recorded, as the hollow structure between element and substrate, till the space of width about tens of μm, can also limit maintain desired by hollow structure limit sealed electronic device.But, while when guaranteeing hollow structure to be width seal close to the limit, space of 100 μm, there is the situation that resin flows into hollow structure etc. and the rate of finished products that is difficult to tackle, packaging body makes reduces sometimes.
In addition, due to the expansion of hollow structure and the such conflicting requirement of the miniaturization of packaging body entirety, need to make the Thickness Ratio of chip (chip) existing thinner.But when making the lower thickness of chip, the intensity of chip self reduces and is easily subject to the impact of substrate warp, and the reliability of packaging body reduces sometimes.
The object of the invention is to, also can maintain hollow structure even if provide the width in the space of hollow structure to be about 100 μm and can prevent packaging body warpage from making the hollow sealing resin sheet of the high hollow package body of reliability and the manufacture method of hollow package body.
for the scheme of dealing with problems
The present inventor etc. concentrate on studies, and found that, by adopting following proposal to solve the problem, thus complete the present invention.
That is, hollow sealing resin sheet of the present invention is with 70 more than volume % and the content of 90 below volume % contains inorganic filler,
Lowest melt viscosity at 60 ~ 130 DEG C that are obtained by Measurement of Dynamic Viscoelasticity is more than 2000Pas and below 20000Pas,
Storage modulus under the normal temperature (20 DEG C) after 150 DEG C of hot curings 1 hour is more than 1GPa and below 20GPa,
Coefficient of linear expansion below the glass transition temperature after 150 DEG C of hot curings 1 hour is more than 5ppm/K and below 15ppm/K.
This hollow sealing resin sheet makes lowest melt viscosity be more than 2000Pas and below 20000Pas due to the inorganic filler of high-load, therefore, it is possible to suppress resin to enter hollow structure and the high hollow package body of fabrication reliability.In addition, because the storage modulus after hot curing and coefficient of linear expansion are set as prescribed limit respectively, therefore, it is possible to guarantee the packaging body intensity after solidifying, and even if the warpage that high temperature also can prevent packaging body is imposed in solder reflow operation etc., can the higher packaging body of fabrication reliability.It should be noted that, the assay method of lowest melt viscosity, storage modulus, glass transition temperature and coefficient of linear expansion is recorded in an embodiment.
The present invention also comprises a kind of manufacture method of hollow package body, and it comprises following operation:
Lamination process, is layered in aforementioned electronic device with the hollow bulb limit that the mode limit covering one or more electronic devices be configured on adherend maintains between aforementioned adherend and aforementioned electronic device by this hollow sealing resin sheet; And
Seal formation process, makes said hollow sealing resin sheet be solidified to form seal.
Accompanying drawing explanation
Fig. 1 is the sectional view of the resin sheet schematically showing an embodiment of the invention.
Fig. 2 A is the figure of an operation of the manufacture method of the hollow package body schematically showing an embodiment of the invention.
Fig. 2 B is the figure of an operation of the manufacture method of the hollow package body schematically showing an embodiment of the invention.
Fig. 2 C is the figure of an operation of the manufacture method of the hollow package body schematically showing an embodiment of the invention.
Embodiment
The present invention is described in detail below to record execution mode, but the present invention is not limited to these execution modes.
" the 1st execution mode "
[hollow sealing resin sheet]
Fig. 1 schematically shows that the hollow sealing resin sheet of an embodiment of the invention is (hereinafter also referred to as " resin sheet ".) 11 sectional view.Resin sheet 11 is representational is that the state be layered on the supporter 11a such as PETG (PET) film provides.It should be noted that, for supporter 11a, in order to easily carry out the stripping of resin sheet 11, demoulding process can be implemented.
Lowest melt viscosity at 60 ~ 130 DEG C that are obtained by Measurement of Dynamic Viscoelasticity before the solidification of resin sheet 11 is more than 2000Pas and below 20000Pas, be preferably more than 3000Pas and below 15000Pas, be more preferably more than 5000Pas and below 10000Pas.By the lowest melt viscosity of resin sheet 11 is set as above-mentioned scope, can prevent resin from entering hollow structure efficiently, obtain the hollow package body that reliability is high.Above-mentioned lowest melt viscosity is less than in limited time lower, has and the worry that resin enters the situation of hollow structure, the reliability of packaging body reduces occurs.On the other hand, exceed above-mentioned in limited time, have the embeddability of chip reduce and produce the worry in space.
Storage modulus at after 150 DEG C of hot curings 1 hour 20 DEG C of resin sheet 11 is more than 1GPa and below 20GPa, is preferably more than 1.5GPa, is more preferably more than 2GPa as its lower limit.In addition, as the upper limit of this storage modulus, be preferably below 10GPa, be more preferably below 5GPa.By making the storage modulus after solidification in above-mentioned scope, the intensity of packaging body can be guaranteed.Be less than the lower of above-mentioned storage modulus to prescribe a time limit, have the worry that packaging body intensity becomes insufficient, reliability reduces.On the other hand, exceed above-mentioned in limited time, in the face of becoming fragile when impacting, packaging body intensity becomes insufficient, now also has the worry that reliability reduces.
The glass transition temperature of sealing resin sheet after 150 DEG C of hot curing process 1 hour is preferably more than 70 DEG C, is more preferably more than 90 DEG C, more preferably more than 110 DEG C.Sealing resin sheet, by possessing such formation, can improve thermal endurance.On the other hand, although be not particularly limited the upper limit of the glass transition temperature after above-mentioned hot curing process, from the viewpoint of cure shrinkage during minimizing hot curing, be preferably less than 250 DEG C, be more preferably less than 200 DEG C.
The coefficient of linear expansion of resin sheet 11 below the glass transition temperature after 150 DEG C of hot curings 1 hour is made to be more than 5ppm/K and below 15ppm/K.The lower limit of this coefficient of linear expansion is preferably more than 6ppm/K, is more preferably more than 7ppm/K.The upper limit of this coefficient of linear expansion is preferably below 12ppm/K, is more preferably below 9ppm/K.By the coefficient of linear expansion below the glass transition temperature that makes the heat treatment thing after the heat treatment of regulation in above-mentioned scope, even if implement high-temperature process to package body structure after the encapsulation process, also can reduce resin sheet 11 and particularly there is the difference of coefficient of linear expansion of substrate of low linear expansion coefficient, the warpage etc. of substrate can be prevented.Above-mentioned coefficient of linear expansion is less than above-mentioned lower limit or exceedes above-mentioned in limited time upper, and the difference of the coefficient of linear expansion of resin sheet and substrate becomes large, and packaging body warpage can occur sometimes.
Resin sheet 11 is preferably containing epoxy resin and phenolic resins.Thereby, it is possible to obtain good Thermocurable.
As epoxy resin, be not particularly limited.Such as can use: the various epoxy resin such as triphenylmethane type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene-type epoxy resin, phenol novolak type epoxy resin, phenoxy resin.These epoxy resin can be used alone and also can combinationally use two or more.
Consider from reactive viewpoint of the toughness after the solidification guaranteeing epoxy resin and epoxy resin; preferred epoxide equivalent 150 ~ 250, softening point or fusing point are be solid-state resin under the normal temperature of 50 ~ 130 DEG C; wherein; from the viewpoint of reliability, more preferably triphenylmethane type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin.
As long as the resin that curing reaction occurs between phenolic resins energy and epoxy resin is just not particularly limited.Such as can use: phenol resol resins, phenol aralkyl resin, biphenyl aralkyl resin, dicyclopentadiene type phenol resin, cresol novolac resin, resol etc.These phenolic resins may be used singly or in combination of two or more.
As phenolic resins, consider from the reactive viewpoint with epoxy resin, preferably use the resin that hydroxyl equivalent is 70 ~ 250, softening point is 50 ~ 110 DEG C, wherein, high from the viewpoint of solidification reactivity, can be suitable for using phenol resol resins.In addition, from the viewpoint of reliability, the resin of the agent of low hygroscopicity using phenol aralkyl resin, biphenyl aralkyl resin such can also be suitable for.
About the compounding ratio of epoxy resin and phenolic resins, from the viewpoint of solidification reactivity, preferably carry out compounding in the mode being total up to 0.7 ~ 1.5 equivalent relative to epoxy radicals 1 equivalent in epoxy resin, the hydroxyl in phenolic resins, be more preferably 0.9 ~ 1.2 equivalent.
The lower limit of the epoxy resin in resin sheet 11 and the total content of phenolic resins is preferably more than 2.0 % by weight, is more preferably more than 3.0 % by weight.When being more than 2.0 % by weight, the bonding force to electronic device, substrate etc. can be obtained well.On the other hand, the upper limit of above-mentioned total content is preferably less than 20 % by weight, is more preferably less than 10 % by weight.When being below 20 % by weight, the moisture absorption of resin sheet can be reduced.
Resin sheet 11 is preferably containing thermoplastic resin.Thereby, it is possible to improve thermal endurance, flexibility, the intensity of the hollow sealing resin sheet obtained.
As thermoplastic resin, can list: the saturated polyester resin such as polyamide, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin, fluororesin, the styreneisobutylene-styrene block copolymers etc. such as natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, 6,6-nylon.These thermoplastic resins can be used alone, or combinationally use two or more.Wherein, from the viewpoint of low stress, the low water absorbable of resin sheet, optimization styrene-isobutylene-styrene block copolymer.
The content of the thermoplastic resin in resin sheet 11 is preferably more than 1.0 % by weight, is more preferably more than 1.5 % by weight.When being more than 1.0 % by weight, resin sheet can be given aptly with flexibility, flexibility.The content of the thermoplastic resin in resin sheet 11 is preferably less than 3.5 % by weight, is more preferably less than 3.0 % by weight.When being below 3.5 % by weight, the cementability of resin sheet to electronic device, substrate can be improved.
Resin sheet 11 is with 70 more than volume % and the content of 90 below volume % contains inorganic filler.The lower limit of above-mentioned content is preferably 74 more than volume %, is more preferably 78 more than volume %.In addition, the upper limit of above-mentioned content is preferably 85 below volume %, is more preferably 83 below volume %.Be above-mentioned scope by making the content of inorganic filler, the effect as expanding of the resin near to hollow structure can be given aptly and maintain hollow structure, and the coefficient of linear expansion that can reduce after solidification and prevent the warpage of packaging body, obtains the hollow package body of high reliability.The content of inorganic filler is less than above-mentioned in limited time lower, sometimes cannot obtain sufficient expansion or the warpage of packaging body occurs, exceed above-mentioned in limited time upper, and the mobility of resin sheet, flexibility reduce sometimes, reduce the cementability of substrate, chip.It should be noted that, when inorganic filler is the mixture of multiple particle, the content of this mixture meets above-mentioned scope.
The content of inorganic filler also can with " % by weight " for unit be described.Representatively, with " % by weight " for unit is described the content of silicon dioxide.
The usual proportion of silicon dioxide is 2.2g/cm
3, therefore, the preferable range of the content (% by weight) of silicon dioxide is as follows.That is, the content of the silicon dioxide in resin sheet 11 is preferably more than 81 % by weight, is more preferably more than 84 % by weight.The content of the silicon dioxide in resin sheet 11 is preferably less than 94 % by weight, is more preferably less than 91 % by weight.
The usual proportion of aluminium oxide is 3.9g/cm
3, therefore, the preferable range of the content (% by weight) of aluminium oxide is as follows.That is, the content of the aluminium oxide in resin sheet 11 is preferably more than 88 % by weight, is more preferably more than 90 % by weight.The content of the aluminium oxide in resin sheet 11 is preferably less than 97 % by weight, is more preferably less than 95 % by weight.
The shape of inorganic filler is not particularly limited, (ellipsoid shaped can be comprised for spherical.), the arbitrary shape such as polyhedral, polygon prism shape, indefinite shape, from the viewpoint of the mobility of the high occupied state realized near hollow structure, appropriateness, preferably spherical.
Inorganic filler is not particularly limited, existing known various filler can be used, such as, can list: the powder of quartz glass, talcum, silicon dioxide (fused silica, crystallinity silicon dioxide etc.), aluminium oxide, aluminium nitride, silicon nitride, boron nitride.They may be used singly or in combination of two or more.Wherein, from the reason that can reduce coefficient of linear expansion well, preferred silicon dioxide, aluminium oxide, more preferably silicon dioxide.
As silicon dioxide, preferred SiO 2 powder, more preferably fused silica powder.As fused silica powder, spheroidal fused SiO 2 powder, broken fused silica powder can be listed, from the viewpoint of mobility, preferred spherical fused silica powder.
The average grain diameter of preferred use inorganic filler is the inorganic filler of the scope of less than 50 μm, and more preferably use average grain diameter is the inorganic filler of the scope of 0.1 ~ 30 μm, and particularly preferably use average grain diameter is the inorganic filler of the scope of 0.5 ~ 25 μm.It should be noted that, about average grain diameter, such as, can use the sample randomly drawed from population, use laser diffraction and scattering formula particle size distribution device to measure, thus derive.
Resin sheet 11 is preferably containing curing accelerator.
As curing accelerator, as long as the material that the solidification of epoxy resin and phenolic resins can be made to carry out just is not particularly limited, such as, can list: the organophosphor based compounds such as triphenylphosphine, tetraphenylboronic acid tetraphenylphosphoniphenolate; The imidazole compounds such as 2-phenyl-4,5-bishydroxymethyl imidazoles, 2-phenyl-4-methyl-5-hydroxymethylimidazole; Deng.Wherein, even if raise from temperature time mixing the reason that curing reaction also sharply can not carry out, can make well resin sheet 11, preferred 2-phenyl-4,5-bishydroxymethyl imidazoles.
The content of curing accelerator is preferably 0.1 ~ 5 weight portion relative to summation 100 weight portion of epoxy resin and phenolic resins.
Resin sheet 11 is preferably containing flame retardant constituent.Thereby, it is possible to burning when reducing on fire because of part short circuit, heating etc. expands.As flame retardant compositions, such as, can use: the various metal hydroxidess such as aluminium hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, stannic hydroxide, Composite metal hydroxides; Phosphonitrile flame retardant etc.Wherein, from the reason of the excellent strength after anti-flammability, solidification, preferred phosphonitrile flame retardant, the compound that preferred formula (1) or formula (2) represent.
[chemical formula 1]
(in formula, R
1and R
2identical or different, represent 1 valency organic group of alkoxyl, phenoxy group, amino, hydroxyl, pi-allyl or at least a kind of group during there is the group that is selected from and is made up of these groups.X represents the integer of 3 ~ 25.)
[chemical formula 2]
(in formula, R
3and R
5identical or different, represent 1 valency organic group of alkoxyl, phenoxy group, amino, hydroxyl, pi-allyl or at least a kind of group during there is the group that is selected from and is made up of these groups.R
4represent the divalent organic group of at least a kind of group had in the group being selected from and being made up of alkoxyl, phenoxy group, amino, hydroxyl and pi-allyl.Y represents the integer of 3 ~ 25.Z represents the integer of 3 ~ 25.)
As R
1and R
2alkoxyl, such as can list: methoxyl group, ethyoxyl, positive propoxy, isopropoxy, n-butoxy, tert-butoxy etc.Wherein, the alkoxyl of preferred carbon number 4 ~ 10.
As R
1and R
2phenoxy group, such as can list the group that formula (3) represents.
[chemical formula 3]
(in formula, R
11represent 1 valency organic group of hydrogen, hydroxyl, alkyl, alkoxyl, glycidyl or at least a kind of group during there is the group that is selected from and is made up of these groups.)
As R
11alkyl, such as can list: methyl, ethyl, n-pro-pyl, isopropyl, normal-butyl, isobutyl group, sec-butyl, the tert-butyl group, amyl group, hexyl, heptyl, 2-ethylhexyl, octyl group, nonyl, decyl, undecyl, dodecyl, tridecyl, myristyl, pentadecyl, octadecyl etc.As R
11alkoxyl, can list and R
1and R
2the same group of alkoxyl.
As R
1and R
2, from the reason of intensity obtained well after anti-flammability, solidification, preferred phenoxy group, the more preferably group that represents of formula (3).
X represents the integer of 3 ~ 25, from the reason of intensity obtained well after anti-flammability, solidification, and preferably 3 ~ 10, more preferably 3 ~ 4.
In formula (2), as R
3and R
5alkoxyl, such as can list methoxyl group, ethyoxyl, positive propoxy, isopropoxy, n-butoxy, tert-butoxy etc.Wherein, the alkoxyl of preferred carbon number 4 ~ 10.
As R
3and R
5phenoxy group, such as can list the group that previously described formula (3) represents.
As R
3and R
5the 1 valency organic group with at least a kind of group in the group being selected from and being made up of alkoxyl, phenoxy group, amino, hydroxyl and pi-allyl, be not particularly limited.
As R
3and R
5, from the reason of intensity obtained well after anti-flammability, solidification, preferred phenoxy group, the more preferably group that represents of formula (3).
As R
4the alkoxyl that has of divalent organic group, such as can list methoxyl group, ethyoxyl, positive propoxy, isopropoxy, n-butoxy, tert-butoxy etc.Wherein, the alkoxyl of preferred carbon number 4 ~ 10.
As R
4the phenoxy group that has of divalent organic group, such as can list the group that previously described formula (3) represents.
Y represents the integer of 3 ~ 25, from the reason of intensity obtained well after anti-flammability, solidification, and preferably 3 ~ 10.
Z represents the integer of 3 ~ 25, from the reason of intensity obtained well after anti-flammability, solidification, and preferably 3 ~ 10.
From the viewpoint of also playing flame retardant effect on a small quantity, the containing ratio of P elements contained in phosphonitrile flame retardant is preferably more than 12 % by weight.
The content of the flame retardant constituent in resin sheet 11 is preferably in whole organic principle more than 10 % by weight, is more preferably more than 15 % by weight.When being more than 10 % by weight, anti-flammability can be obtained well.The content of the thermoplastic resin in resin sheet 11 is preferably in whole organic principle less than 30 % by weight, is more preferably less than 25 % by weight.When being below 30 % by weight, the physical property of solidfied material is had to reduce (being specifically the reduction of the physical property such as glass transition temperature, high-temperature resin intensity) little tendency.
Resin sheet 11 is preferably containing silane coupler.As silane coupler, be not particularly limited, 3-glycidoxypropyltrimewasxysilane etc. can be listed.
The content of the silane coupler in resin sheet 11 is preferably 0.1 ~ 3 % by weight.When above-mentioned content is more than 0.1 % by weight, the intensity of the resin sheet after solidification can be improved, and can water absorption rate be reduced.On the other hand, when above-mentioned content is below 3 % by weight, the generation be vented can be suppressed.
Resin sheet 11 is preferably containing pigment.As pigment, be not particularly limited, can carbon black etc. be listed.
The content of the pigment in resin sheet 11 is preferably 0.1 ~ 2 % by weight.When being more than 0.1 % by weight, can obtain good markup.On the other hand, when being below 2 % by weight, the intensity of the resin sheet after solidifying can be guaranteed.
It should be noted that, in resin combination, except above-mentioned each composition, can also suitable other additive compounding as required.
[manufacture method of hollow sealing resin sheet]
The manufacture method of resin sheet 11 is not particularly limited, preferably the mixing thing of preparation the mixing thing obtained is processed into the method for sheet.Specifically, the known mixing rolls such as above-mentioned each components utilising mixing mill (mixingroll), adding pressure type kneader, extruder are carried out melting mixing, prepares mixing thing thus, and the mixing thing obtained is processed into sheet.As compounding conditions, temperature is preferably more than the softening point of above-mentioned each composition, such as, be 30 ~ 150 DEG C, when considering the Thermocurable of epoxy resin, is preferably 40 ~ 140 DEG C, more preferably 60 ~ 120 DEG C.Time is such as 1 ~ 30 minute, is preferably 5 ~ 15 minutes.
Mixing preferred (under reduced atmosphere) at reduced pressure conditions carries out.Upper limit of pressure under reduced pressure is preferably 0.1kg/cm
2below, 0.05kg/cm is more preferably
2below.The lower limit of the pressure under reduced pressure is more low more preferred, from the viewpoint of productivity, the limit physically, can be 1 × 10
-4kg/cm
2above.Thereby, it is possible to prevent gas to be mixed into mixing thing, the generation of pore in the mixing thing obtained can be suppressed.
Mixing thing after melting mixing is preferably directly processed in the condition of high temperature without cooling.As processing method, be not particularly limited, can list: flat-plate compressed method for making, T-shaped mould extrusion molding, roller rolling process, the mixing method of roller, inflation extrusion molding, coetrusion, calendaring molding method etc.As processing temperature, be preferably more than the softening point of above-mentioned each composition, when considering Thermocurable and the formability of epoxy resin, such as, be 40 ~ 150 DEG C, be preferably 50 ~ 140 DEG C, more preferably 70 ~ 120 DEG C.
The thickness of resin sheet 11 is not particularly limited, is preferably 100 ~ 2000 μm.Time in above-mentioned scope, can sealed electronic device well.In addition, slim by resin sheet is made, can caloric value be reduced, become and not easily cure shrinkage occurs.Its result, can reduce packaging body amount of warpage, obtains the hollow package body that reliability is higher.
Resin sheet 11 can be single layer structure, can be also the sandwich construction that more than 2 resin sheets are laminated, and never worries that the reason of high, the easy low moisture absorption of the homogeneity that splitting, sheet are thick is set out, preferred single layer structure.
Resin sheet 11 is used to SAW (SurfaceAcousticWave) filter; The MEMS such as pressure sensor, vibrating sensor (MicroElectroMechanicalSystems); The semiconductors such as IC, transistor such as LSI; Capacitor; Resistance; The sealing of the electronic devices such as cmos sensor.Wherein, the sealing needing the electronic device of hollow sealing (being specially SAW filter, MEMS) can be suitable for, the sealing of SAW filter can be suitably used for especially.
[manufacture method of hollow package body]
Fig. 2 A ~ 2C is respectively the figure of an operation of the manufacture method of the hollow package body schematically showing an embodiment of the invention.As hollow sealing method, be not particularly limited, existing known method can be used to seal.Such as can list following method: maintain hollow structure limit by stacked for uncured resin sheet 11 (mounting) on substrate with the mode limit covering the electronic device on adherend, then, resin sheet 11 is solidified and carries out the method etc. that seals.As adherend, be not particularly limited, such as, can list tellite, ceramic substrate, silicon substrate, metal substrate etc.In present embodiment, by resin sheet 11, hollow sealing is carried out to the SAW chip 13 be arranged on tellite 12, make hollow package body.
(SAW chip installation base plate preparatory process)
In SAW chip installation base plate preparatory process, prepare the tellite 12 (with reference to Fig. 2 A) being provided with multiple SAW chip 13.Its singualtion can be formed by the piezoelectric crystal utilizing the cutting of known method to be formed with the interdigital electrode of regulation by SAW chip 13.The installation of SAW chip 13 on tellite 12 can use the known device such as flip chip bonder (FlipChipBonder), die bonder (diebonder).SAW chip 13 is electrically connected via projected electrode 13a such as projections (bump) with tellite 12.In addition, hollow space 14 is maintained in the mode of the surface elasticity wave propagation not hindering SAW filter surface between SAW chip 13 and tellite 12.Distance between SAW chip 13 and tellite 12 can suitably set, and is generally about 10 ~ 100 μm.
(sealing process)
In sealing process, to cover mode stacked resin sheet 11 on tellite 12 of SAW chip 13, carry out resin seal (with reference to Fig. 2 B) by resin sheet 11 pairs of SAW chip 13.Resin sheet 11 works as the protection of SAW chip 13 and subsidiary element thereof the sealing resin from external environment influence.
The method be layered on tellite 12 by resin sheet 11 is not particularly limited, the known method such as hot pressing, laminating machine can be utilized carry out.As hot pressing condition, temperature is such as 40 ~ 100 DEG C, is preferably 50 ~ 90 DEG C, and pressure is such as 0.1 ~ 10MPa, is preferably 0.5 ~ 8MPa, and the time is such as 0.3 ~ 10 minute, is preferably 0.5 ~ 5 minute.In addition, consider resin sheet 11 pairs of SAW chip 13 and the adaptation of tellite 12 and the raising of tracing ability, (such as 0.1 ~ 5kPa) suppresses preferably at reduced pressure conditions.
(seal formation process)
In seal formation process, hot curing process is carried out to resin sheet 11 and forms seal 15 (with reference to Fig. 2 B).As the condition of hot curing process, heating-up temperature is preferably more than 100 DEG C, is more preferably more than 120 DEG C.On the other hand, the upper limit of heating-up temperature is preferably less than 200 DEG C, is more preferably less than 180 DEG C.Be preferably heating time more than 10 minutes, be more preferably more than 30 minutes.On the other hand, the upper limit of heating time be preferably less than 180 minutes, be more preferably less than 120 minutes.In addition, can pressurize as required, be preferably more than 0.1MPa, be more preferably more than 0.5MPa.Its upper limit is preferably below 10MPa, is more preferably below 5MPa.
(cutting action)
Then, the cutting (with reference to Fig. 2 C) of seal 15 can be carried out.Thereby, it is possible to the hollow package body 18 that to obtain with SAW chip 13 be unit.
(substrate installation procedure)
As required, following operation can be carried out: distribution carried out again to hollow packaging body 18 and forms projection, and being installed on the substrate installation procedure of other substrate (not shown).The installation of hollow package body 18 on substrate can use the known device such as flip chip bonder, die bonder.
" the 2nd execution mode "
In the 1st execution mode, each compounding ingredients kneader etc. carried out mixing thus prepares mixing thing, by this mixing thing extrusion molding, forming sheet.In contrast, in the present embodiment, apply each component dissolves or the varnish that obtains in being dispersed in organic solvent etc., form sheet.
As using the concrete production order of varnish, conventionally mentioned component and other additive of adding as required suitably being mixed, making them be dissolved or dispersed in equably in organic solvent, prepare varnish.Then, above-mentioned varnish is coated on the supporters such as polyester, carries out drying, thereby, it is possible to obtain hollow sealing resin sheet 11.In addition, as required, also can in order to protect the surface of hollow sealing resin sheet and the stripping films such as polyester film of fitting.Stripping film is peeled off when sealing.
As above-mentioned organic solvent, be not particularly limited, existing known various organic solvent can be used, such as methylethylketone, acetone, cyclohexanone, dioxanes, metacetone, toluene, ethyl acetate etc.These solvents may be used singly or in combination of two or more.In addition, usually, preferably with the solid component concentration of varnish 30 ~ 95 % by weight scope mode with an organic solvent.
The thickness of dried of organic solvent is not particularly limited, from the viewpoint of homogeneity and the residual solvent amount of thickness, usually, is preferably set to 5 ~ 100 μm, is more preferably 20 ~ 70 μm.
Embodiment
Below enumerate suitable embodiments of the present invention to be described in detail.Wherein, about the material recorded in these embodiments, compounding amount etc., as long as no the record be particularly limited to, just scope of the present invention can not be defined in these materials, compounding amount.
The composition used in embodiment is described.
Epoxy resin 1: the YSLV-80XY (bisphenol f type epoxy resin, epoxide equivalent 200g/eq., softening point 80 DEG C) that Nippon Steel Chemical Co., Ltd manufactures
Epoxy resin 2: the EPPN-501HY (epoxide equivalent 169g/eq., softening point 60 DEG C) that Nippon Kayaku K. K manufactures
Phenolic resins 1: the bright MEH-7851-SS (there is the phenolic resins of biphenyl aralkyl skeleton, hydroxyl equivalent 203g/eq., softening point 67 DEG C) with changing into Co., Ltd.'s manufacture
Phenolic resins 2: the bright MEH-7500 (phenol equivalent 97g/eq., softening point 111 DEG C) with changing into Co., Ltd.'s manufacture
The SIBSTER072T (styreneisobutylene-styrene block copolymer) that thermoplastic resin: KanekaCorporation manufactures
Inorganic filler 1: the FB-9454FC (melting spherical silicon dioxide, average grain diameter 20 μm) that Deuki Kagaku Kogyo Co., Ltd manufactures
The SE-40 (melting spherical silicon dioxide, average grain diameter 38 μm) that inorganic filler 2:TokuyamaCorporation manufactures
Inorganic filler 3: the FB-5SDC (melting spherical silicon dioxide, average grain diameter 5 μm) that Deuki Kagaku Kogyo Co., Ltd manufactures
The SO-25R (melting spherical silicon dioxide, average grain diameter 0.5 μm) that inorganic filler 4:ADMATECHSCo., Ltd. manufacture
Silane coupler: the KBM-403 (3-glycidoxypropyltrimewasxysilane) that KCC of SHIN-ETSU HANTOTAI manufactures
Carbon black: the #20 that Mitsubishi chemical Co., Ltd manufactures
Fire retardant: volt is shown in the FP-100 (phosphonitrile flame retardant: the compound that formula (4) represents) manufactured by pharmacy
[chemical formula 4]
(in formula, m represents the integer of 3 ~ 4.)
Curing accelerator: the 2PHZ-PW (2-phenyl-4,5-bishydroxymethyl imidazoles) that Shikoku Chem manufactures
[embodiment 1 ~ 4 and comparative example 1 ~ 4]
According to the proportioning described in table 1, compounding each composition, utilizes roller mixing roll at 60 ~ 120 DEG C, 10 minutes, (0.01kg/cm under reduced pressure
2) carry out melting mixing, prepare mixing thing.Then, flat-plate compressed method for making is utilized to be configured as sheet (50mm × 50mm) the mixing thing obtained, the hollow sealing resin sheet of the thickness shown in making table 1.
[embodiment 5]
According to the proportioning described in table 1, make each component dissolves or be dispersed in the 1:1 mixed solvent of methylethylketone and toluene, make the varnish of solid constituent 40 % by weight.Then, in the PET film implementing demoulding process, take the thickness of the film after solvent seasoning as the mode varnish coating of 50 μm, thereafter, drying condition is set to 120 DEG C, 3 minutes, makes dried coating film, obtain the resin sheet of thickness 50 μm.Using laminator to be depressed into thickness the resin sheet obtained is 200 μm, makes the hollow sealing resin sheet of thickness 200 μm.
(lowest melt viscosity)
For the lowest melt viscosity of each hollow sealing resin sheet, the determination of viscoelasticity device " ARES " (condition determination: measure temperature range 60 ~ 130 DEG C, programming rate 10 DEG C/min, frequency 0.1Hz) using TAINSTRUMENTSJAPANINC. to manufacture follows the trail of viscosity B coefficent, and the result obtained by viscometric minimum is shown in table 1.
(mensuration of the coefficient of linear expansion of hollow sealing resin sheet)
The mensuration of coefficient of linear expansion uses thermo-mechanical analysis device (Co., Ltd. Neo-Confucianism manufactures, model: TMA8310) to carry out.Specifically, by each hollow sealing resin sheet 150 DEG C of heating 1 hour, make its hot curing, by this solidfied material with sample size for after long 25mm × wide 4.9mm × thick 200 μm obtains measuring sample, this mensuration sample is installed on film stretching mensuration fixture, measure under the condition of tensile load 4.9mN, programming rate 10 DEG C/min, obtain coefficient of linear expansion.Show the result in table 1.
(mensuration of the storage modulus of hollow sealing resin sheet and glass transition temperature (Tg))
Each hollow sealing resin sheet is made its hot curing in 1 hour 150 DEG C of heating, by this solidfied material with sample size for long 25mm × wide 4.9mm × thick 200 μm obtains measuring sample.The RSA3 using TAINSTRUMENTSJAPANINC. to manufacture measures the storage modulus of this mensuration sample.Specifically, under the condition of frequency 1Hz, programming rate 10 DEG C/min, measure the storage modulus of temperature range and the loss modulus of-50 ~ 300 DEG C, and storage modulus at reading 20 DEG C (E '), obtain thus.In addition, calculate the value of tan δ in this mensuration (G " (loss modulus)/G ' (storage modulus)), obtain glass transition temperature (Tg) thus.Their result is shown in table 1.
(evaluation of the resin entering of packaging body hollow bulb and the warpage of packaging body)
Make the glass substrate SAW chip of the following specification being formed with aluminium interdigital electrode being installed under following engaging condition long 50mm × wide 50mm × thick 0.5mm and the SAW chip installation base plate obtained.In embodiment 1 ~ 3,5 and comparative example 1 ~ 4, the relief width between SAW chip and glass substrate is 30 μm, is 90 μm in example 4.
< SAW chip >
Chip size: 1.2mm (thickness 150 μm)
Projection material (embodiment 1 ~ 3,5 and comparative example 1 ~ 4): Au projection, high 30 μm
Projection material (embodiment 4): solder (without lead-type) projection, high 90 μm
Number of lugs: 6 projections
Chip-count: 100 (10 × 10)
< engaging condition >
Device: Matsushita Electric Industrial Co., Ltd manufactures
Engaging condition: 200 DEG C, 3N, 1sec, ultrasonic power 2W
On the SAW chip installation base plate obtained, under heating pressurized conditions shown below, attach each hollow sealing resin sheet by vacuum pressing.
< attaches condition >
Temperature: 60 DEG C
Plus-pressure: 4MPa
Vacuum degree: 1.6kPa
Press time: 1 minute
After being released into atmospheric pressure, in air drier, under the condition of 150 DEG C, 1 hour, make the hot curing of hollow sealing resin sheet, obtain seal.Seal is cooled to normal temperature, then, from glass substrate side, electron microscope (manufacture of KEYENCE company, trade name " DigitalMicroscope ", 200 times) is utilized to measure the inlet of the resin of the hollow bulb between SAW chip and glass substrate.For resin inlet, before utilizing hollow sealing resin sheet to seal, utilize electron microscope to confirm the position of end of SAW chip from glass substrate side and record in advance, electron microscope is again utilized to observe from glass substrate side after sealing, observation image relatively before and after sealing, the end measuring the SAW chip confirmed in advance before sealing enters the maximum arrival distance of the resin of hollow bulb, it can be used as resin inlet.Be the average evaluation of less than 20 μm by resin inlet being "○", is "×" by the average evaluation more than 20 μm.Show the result in table 1.
In addition, use the surface of laser three-D determinator (manufacture of T-TEC company, " LS-220-MT50 ") scanning resin sheet side, measure the maximum amount of warpage being cooled to the seal of normal temperature, be the average evaluation of below 1mm by amount of warpage being "○", is "×" by the average evaluation more than 1mm.
[table 1]
As shown in Table 1, in the SAW chip packaging body of embodiment 1 ~ 5, the resinous principle of hollow sealing resin sheet to hollow bulb enter and the warpage of hollow sealing resin sheet is inhibited, even if hollow bulb expands also can make high-quality and the hollow package body of high reliability.In comparative example 1 ~ 4, the resin inlet of hollow bulb, all more than 20 μm, in addition, in comparative example 1,3 and 4, also there occurs the warpage of seal.
description of reference numerals
11 hollow sealing resin sheets
11a supporter
13SAW chip
15 seals
18 hollow package bodies
Claims (2)
1. a hollow sealing resin sheet, it is with 70 more than volume % and the content of 90 below volume % contains inorganic filler,
Lowest melt viscosity at 60 ~ 130 DEG C that are obtained by Measurement of Dynamic Viscoelasticity is more than 2000Pas and below 20000Pas,
Storage modulus at 20 DEG C after 150 DEG C of hot curings 1 hour is more than 1GPa and below 20GPa,
Coefficient of linear expansion below the glass transition temperature after 150 DEG C of hot curings 1 hour is more than 5ppm/K and below 15ppm/K.
2. a manufacture method for hollow package body, it comprises following operation:
Lamination process, is layered on described electronic device with the hollow bulb limit that the mode limit covering one or more electronic devices be configured on adherend maintains between described adherend and described electronic device by hollow sealing resin sheet according to claim 1; And
Seal formation process, makes described hollow sealing resin sheet be solidified to form seal.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-069926 | 2013-03-28 | ||
| JP2013069926 | 2013-03-28 | ||
| JP2014022313A JP6643791B2 (en) | 2013-03-28 | 2014-02-07 | Hollow sealing resin sheet and hollow package manufacturing method |
| JP2014-022313 | 2014-02-07 | ||
| PCT/JP2014/057339 WO2014156837A1 (en) | 2013-03-28 | 2014-03-18 | Hollow sealing resin sheet and production method for hollow package |
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| CN105074906A true CN105074906A (en) | 2015-11-18 |
| CN105074906B CN105074906B (en) | 2018-06-29 |
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|---|---|
| JP (1) | JP6643791B2 (en) |
| CN (1) | CN105074906B (en) |
| SG (1) | SG11201507891RA (en) |
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| WO (1) | WO2014156837A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108250681A (en) * | 2016-12-28 | 2018-07-06 | 日东电工株式会社 | Resin sheet |
| CN108475670A (en) * | 2016-04-05 | 2018-08-31 | 琳得科株式会社 | The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits |
| CN111279472A (en) * | 2017-10-31 | 2020-06-12 | 长濑化成株式会社 | Method for manufacturing mounting structure and sheet used therein |
| CN114144469A (en) * | 2019-07-12 | 2022-03-04 | 日东电工株式会社 | Sealing resin sheet |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6379051B2 (en) * | 2015-01-23 | 2018-08-22 | 日東電工株式会社 | Hollow electronic device sealing sheet |
| JP6422370B2 (en) * | 2015-03-03 | 2018-11-14 | 日東電工株式会社 | Hollow type electronic device sealing sheet and method for manufacturing hollow type electronic device package |
| JP6883937B2 (en) * | 2015-03-19 | 2021-06-09 | 日東電工株式会社 | Manufacturing method of sealing sheet and hollow package |
| JP6283624B2 (en) * | 2015-05-28 | 2018-02-21 | 日東電工株式会社 | Hollow electronic device sealing sheet, hollow electronic device package manufacturing method, and hollow electronic device package |
| US11685102B2 (en) * | 2017-11-08 | 2023-06-27 | Hytech Worldwide, Inc. | Three dimensional thermoforming and lamination |
| JPWO2019098078A1 (en) * | 2017-11-17 | 2020-10-01 | リンテック株式会社 | Resin sheet |
| CN109148680A (en) * | 2018-09-26 | 2019-01-04 | 深圳市麦捷微电子科技股份有限公司 | Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture |
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| JP2005060584A (en) * | 2003-08-18 | 2005-03-10 | Hitachi Chem Co Ltd | Film for sealing |
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| JP2008103700A (en) * | 2006-09-19 | 2008-05-01 | Hitachi Chem Co Ltd | Multi-layered die bond sheet, semiconductor device with semiconductor adhesive film, semiconductor device, and method of manufacturing semiconductor device |
| JP4872587B2 (en) * | 2006-10-12 | 2012-02-08 | 日立化成工業株式会社 | Sealing film and semiconductor device using the same |
| JP2013006893A (en) * | 2011-06-22 | 2013-01-10 | Hitachi Chemical Co Ltd | High thermal conductivity resin composition, high thermal conductivity cured product, adhesive film, sealing film, and semiconductor device using them |
| JP5712884B2 (en) * | 2011-09-28 | 2015-05-07 | 日立化成株式会社 | Film adhesive and method for manufacturing semiconductor device using the same |
-
2014
- 2014-02-07 JP JP2014022313A patent/JP6643791B2/en active Active
- 2014-03-18 SG SG11201507891RA patent/SG11201507891RA/en unknown
- 2014-03-18 WO PCT/JP2014/057339 patent/WO2014156837A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005060584A (en) * | 2003-08-18 | 2005-03-10 | Hitachi Chem Co Ltd | Film for sealing |
| CN101307221A (en) * | 2007-05-17 | 2008-11-19 | 日东电工株式会社 | Thermosetting encapsulation adhesive sheet |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108475670A (en) * | 2016-04-05 | 2018-08-31 | 琳得科株式会社 | The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits |
| CN108250681A (en) * | 2016-12-28 | 2018-07-06 | 日东电工株式会社 | Resin sheet |
| CN111279472A (en) * | 2017-10-31 | 2020-06-12 | 长濑化成株式会社 | Method for manufacturing mounting structure and sheet used therein |
| CN111279472B (en) * | 2017-10-31 | 2023-06-30 | 长濑化成株式会社 | Method for manufacturing mounting structure and sheet used therein |
| CN114144469A (en) * | 2019-07-12 | 2022-03-04 | 日东电工株式会社 | Sealing resin sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014156837A1 (en) | 2014-10-02 |
| TW201448135A (en) | 2014-12-16 |
| JP2014209568A (en) | 2014-11-06 |
| TWI621225B (en) | 2018-04-11 |
| JP6643791B2 (en) | 2020-02-12 |
| CN105074906B (en) | 2018-06-29 |
| SG11201507891RA (en) | 2015-10-29 |
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