CN109148680A - Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture - Google Patents

Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture Download PDF

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Publication number
CN109148680A
CN109148680A CN201811119764.7A CN201811119764A CN109148680A CN 109148680 A CN109148680 A CN 109148680A CN 201811119764 A CN201811119764 A CN 201811119764A CN 109148680 A CN109148680 A CN 109148680A
Authority
CN
China
Prior art keywords
supplementally
support plate
fixture
ceramic substrate
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811119764.7A
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Chinese (zh)
Inventor
郑文玮
姚艳龙
赖定权
沙小强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Microgate Technology Co ltd
Original Assignee
Shenzhen Microgate Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Microgate Technology Co ltd filed Critical Shenzhen Microgate Technology Co ltd
Priority to CN201811119764.7A priority Critical patent/CN109148680A/en
Publication of CN109148680A publication Critical patent/CN109148680A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/02Forming enclosures or casings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/03Assembling devices that include piezoelectric or electrostrictive parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies

Abstract

Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture, is related to wafer-level package (CSP) technology field.Traditional technical deficiency being not obvious by simple physical method reduction angularity effect is solved, the hollow package body is placed in and supplementally takes the solidification of fixture high temperature;It supplementally takes fixture and is made of support plate with the upper cover plate for being placed in support plate upper layer, upper cover plate is brass sheet, support plate be equipped with the hollow package body coincide positioning groove, by the hollow package body be placed in positioning groove middle cover close cover board carry out angularity correcting state under hot setting.Using the copper material of low heat transfer coefficient, the rate of heat dispation of this process can be reduced.

Description

Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture
Technical field
The present invention relates to wafer-level package (CSP) technology fields.
Background technique
Wafer-level package (CSP) technique is the packaging technology that SAW filter (SAW) is relatively common currently on the market, One of packing forms are the piezo chips with independent electrical performance after planting ball, cutting, pass through hot pressing ultrasonic technique Face-down bonding completes circuit connection on gold-plated ceramic substrate.Then, epoxy resin film is utilized above chip, passes through layer Pressure technique, high-temperature baking technique etc. process obtain the hollow package body of SAW filter.
Since in high-temperature baking technical process, there are notable differences for the thermal expansion coefficient of epoxy resin film and ceramic substrate The a series of complex physical chemistry such as (thermal expansion coefficient of epoxy resin film is 7 times of ceramic substrate or so) and high-temperature baking Variation, thus, after expanding with heat and contract with cold, which knows from experience to form significant warpage (Warpage).For common 50mm × 50mm ceramic substrate, the whole plate angularity of hollow package body up to 1.3 ~ 1.4mm, this may seriously affect piezo chips with Soldering reliability between ceramic substrate.And traditional process that angularity is reduced by simple physical method, effect is simultaneously It is unobvious.
Summary of the invention
It is an object of the invention to solve traditional skill being not obvious by simple physical method reduction angularity effect Art is insufficient, and proposes a kind of epoxy resin packaging ceramic substrate warp degree and supplementally take process and supplementally take fixture.
To solve technical problem proposed by the invention, the technical solution of use are as follows:
A kind of epoxy resin packaging ceramic substrate warp degree supplementally takes process, has independent electrical after planting ball, cutting The piezo chips of energy complete circuit connection through hot pressing ultrasonic technique face-down bonding on gold-plated ceramic substrate, are planting ball Form hollow gap under support, be bonded epoxy resin film above piezo chips, after laminated technique lamination, piezo chips with Hollow package body is formed between ceramic substrate;Consolidate it is characterized by: the hollow package body is placed in and supplementally takes fixture high temperature Change;Fixture is supplementally taken by support plate and is placed in the upper cover plate on support plate upper layer and constitutes, upper cover plate is brass sheet, support plate be equipped with The hollow package body is placed in positioning groove middle cover and closes cover board progress by the identical positioning groove of the hollow package body Hot setting under the correcting state of angularity.
It is described according to hollow package body size and to supplementally take grip size, one or more is sealed simultaneously in every piece of support plate Dress body carries out hot setting under the correcting state of angularity simultaneously.
Can using supplementally take for two layers or more fixture to and meanwhile carry out hot setting under the correcting state of angularity.
What a kind of epoxy resin packaging ceramic substrate warp degree was supplementally taken supplementally takes fixture, it is characterised in that: described to supplementally take fixture It include support plate and upper cover plate, upper cover plate is placed in support plate upper layer, and upper cover plate is brass sheet, and support plate is equipped with and hollow envelope The identical positioning groove of body is filled, bayonet lock is equipped between support plate and upper cover plate.
The support plate can be two layers or more stepped construction.
The invention has the benefit that using the biggish brass sheet of density, on the one hand the present invention supplementally takes the upper cover plate of fixture Physical correction is carried out to packaging body;On the other hand the temperature-fall period during baking-curing is taken place mostly in due to warpage, is made With the copper material of low heat transfer coefficient, the rate of heat dispation of this process can be reduced.The present invention is mainly dried from physical correction and reduction Consider in terms of rate of heat dispation two of temperature-fall period in roasting solidification process, to reduce packaging body internal stress, further increases production Product reliability does not conflict with current process flow;It is that further to improve product on the basis of existing process conditions reliable Property, reduce product failure risk.
Detailed description of the invention
Fig. 1 is the cross section structure schematic diagram of hollow package body of the invention;
Fig. 2 is the cross section structure schematic diagram for supplementally taking fixture of the invention;
Fig. 3 is the present invention to the improvement of hollow packaging body angularity into rear contrast effect figure;
Fig. 4 is the structural schematic diagram supplementally taken fixture and use two layers or more stepped construction of the invention.
Specific embodiment
Of the invention is further described below in conjunction with attached drawing and currently preferred specific embodiment.
Referring to figs. 1 to shown in Fig. 2, epoxy resin packaging ceramic substrate warp degree of the present invention supplementally takes process, firstly, By the piezo chips 11 with independent electrical performance after plant ball, cutting, by hot pressing ultrasonic technique face-down bonding gold-plated On ceramic substrate 12, circuit connection is completed, forms hollow gap 15 under the support for planting ball 13;Then, in piezo chips 11 Fitting epoxy resin film 14 in side's forms hollow package between piezo chips 11 and ceramic substrate 12 after laminated technique lamination Body 1;The solidification of 2 high temperature of fixture is supplementally taken finally, the hollow package body 1 is placed in.
Supplementally taking fixture 2 includes support plate 21 and upper cover plate 22;Upper cover plate 22 is placed in 21 upper layer of support plate, and upper cover plate 22 is Brass sheet, support plate 21 are equipped with the positioning groove 211 coincideing with hollow package body 1, set between support plate 21 and upper cover plate 22 There is bayonet lock 23.Hollow package body 1 is placed in 211 middle cover of positioning groove and closes cover board 22 to carry out high temperature under the correcting state of angularity solid Change.
Upper cover plate 22 is using the biggish brass sheet of density and the cooperation pressing hollow package body 1 of support plate 21, into hollow package While body 1 carries out physical correction;The cooling rank during baking-curing is taken place mostly in due to 1 warpage of hollow package body Section, uses the brass sheet of low heat transfer coefficient as upper cover plate, can reduce the rate of heat dispation of this process, make inside hollow package body 1 Stress slow release reduces the internal stress of finished product, as shown in figure 3, left side hollow package body 1 is before improving, in the right in Fig. 3 After empty packaging body 1 is improvement, so that the angularity of hollow package body 1 can reduce by 28 ~ 45%, final to promote product reliable Property, while also improving the qualification rate of the finished product, reduce production cost.
Referring to fig. 4, in order to promote treatment effeciency of the present invention, fixture 2 is supplementally taken according to 1 size of hollow package body and auxiliary 2 size of fixture is repaired, the correction of angularity can be carried out simultaneously for one or more hollow package bodies 1, without causing to product Damage.In addition, supplementally taking fixture 2 can also that is to say that the support plate 21 can be tied for two layers or more stacking using multilayered structure Structure, hot setting, upper cover plate 22 and support plate under two layers of use or more of the correcting state supplementally taken fixture while carrying out angularity Respectively hollow 1 angularity of packaging body is corrected using nut/bayonet lock 23 between 21, reaching improves production by calorifics principle batch Product flatness.

Claims (5)

1. a kind of epoxy resin packaging ceramic substrate warp degree supplementally takes process, will there is independent electrical after plant ball, cutting The piezo chips of performance complete circuit connection through hot pressing ultrasonic technique face-down bonding on gold-plated ceramic substrate, are planting ball Support under form hollow gap, be bonded epoxy resin film above piezo chips, after laminated technique lamination, piezo chips Hollow package body is formed between ceramic substrate;Fixture high temperature is supplementally taken it is characterized by: the hollow package body is placed in Solidification;It supplementally takes fixture and is made of support plate with the upper cover plate for being placed in support plate upper layer, upper cover plate is brass sheet, and support plate is equipped with With the hollow package body coincide positioning groove, by the hollow package body be placed in positioning groove middle cover close cover board into Hot setting under the correcting state of row angularity.
2. epoxy resin packaging ceramic substrate warp degree according to claim 1 supplementally takes process, it is characterised in that: institute State according to hollow package body size and supplementally take grip size, in every piece of support plate simultaneously to one or more packaging bodies simultaneously into Hot setting under the correcting state of row angularity.
3. epoxy resin packaging ceramic substrate warp degree according to claim 1 supplementally takes process, it is characterised in that: can With using supplementally taking fixture two layers or more while carrying out hot setting under the correcting state of angularity.
4. what a kind of epoxy resin packaging ceramic substrate warp degree was supplementally taken supplementally takes fixture, it is characterised in that: described to supplementally take fixture packet Support plate and upper cover plate are included, upper cover plate is placed in support plate upper layer, and upper cover plate is brass sheet, and support plate is equipped with and hollow package The identical positioning groove of body, is equipped with bayonet lock between support plate and upper cover plate.
5. what a kind of epoxy resin packaging ceramic substrate warp degree according to claim 4 was supplementally taken supplementally takes fixture, feature Be: the support plate can be two layers or more stepped construction.
CN201811119764.7A 2018-09-26 2018-09-26 Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture Pending CN109148680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811119764.7A CN109148680A (en) 2018-09-26 2018-09-26 Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811119764.7A CN109148680A (en) 2018-09-26 2018-09-26 Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture

Publications (1)

Publication Number Publication Date
CN109148680A true CN109148680A (en) 2019-01-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373701A (en) * 2022-01-05 2022-04-19 广东气派科技有限公司 Jig for improving warpage, bump bridging and Die crack of Flip chip substrate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163742A (en) * 1992-11-18 1994-06-10 Fujitsu Ltd Semiconductor device
JPH1154532A (en) * 1997-07-31 1999-02-26 Toshiba Corp Package for semiconductor device
US20030194835A1 (en) * 2002-04-10 2003-10-16 Kim Joon Il Method for fabricating ceramic chip packages
US6949404B1 (en) * 2002-11-25 2005-09-27 Altera Corporation Flip chip package with warpage control
CN101389160A (en) * 2008-08-29 2009-03-18 瑞声声学科技(常州)有限公司 Piezo-electric acoustic generator manufacturing method
CN201426216Y (en) * 2009-05-06 2010-03-17 深圳市深南电路有限公司 PCB stacking structure
WO2014156837A1 (en) * 2013-03-28 2014-10-02 日東電工株式会社 Hollow sealing resin sheet and production method for hollow package
CN205452240U (en) * 2015-11-30 2016-08-10 中国电子科技集团公司第三十八研究所 Solve fan -out type wafer -level package warping device
CN106549648A (en) * 2016-12-06 2017-03-29 深圳市麦高锐科技有限公司 A kind of SAW resonator and processing technology of wafer-level package

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163742A (en) * 1992-11-18 1994-06-10 Fujitsu Ltd Semiconductor device
JPH1154532A (en) * 1997-07-31 1999-02-26 Toshiba Corp Package for semiconductor device
US20030194835A1 (en) * 2002-04-10 2003-10-16 Kim Joon Il Method for fabricating ceramic chip packages
US6949404B1 (en) * 2002-11-25 2005-09-27 Altera Corporation Flip chip package with warpage control
CN101389160A (en) * 2008-08-29 2009-03-18 瑞声声学科技(常州)有限公司 Piezo-electric acoustic generator manufacturing method
CN201426216Y (en) * 2009-05-06 2010-03-17 深圳市深南电路有限公司 PCB stacking structure
WO2014156837A1 (en) * 2013-03-28 2014-10-02 日東電工株式会社 Hollow sealing resin sheet and production method for hollow package
CN205452240U (en) * 2015-11-30 2016-08-10 中国电子科技集团公司第三十八研究所 Solve fan -out type wafer -level package warping device
CN106549648A (en) * 2016-12-06 2017-03-29 深圳市麦高锐科技有限公司 A kind of SAW resonator and processing technology of wafer-level package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373701A (en) * 2022-01-05 2022-04-19 广东气派科技有限公司 Jig for improving warpage, bump bridging and Die crack of Flip chip substrate

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