CN106549648A - A kind of SAW resonator and processing technology of wafer-level package - Google Patents
A kind of SAW resonator and processing technology of wafer-level package Download PDFInfo
- Publication number
- CN106549648A CN106549648A CN201611109405.4A CN201611109405A CN106549648A CN 106549648 A CN106549648 A CN 106549648A CN 201611109405 A CN201611109405 A CN 201611109405A CN 106549648 A CN106549648 A CN 106549648A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- core piece
- watch core
- saw resonator
- sound watch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005516 engineering process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000919 ceramic Substances 0.000 claims abstract description 62
- 239000011347 resin Substances 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 230000002463 transducing effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 6
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 11
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 230000007812 deficiency Effects 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005130 electrotropism Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Abstract
A kind of SAW resonator and processing technology of wafer-level package, is related to the encapsulating structure and packaging technology technical field of SAW resonator.Solve existing SAW resonator encapsulation volume big, or the technical deficiency that packaging cost is high, including sound watch core piece, it is characterised in that：Ceramic substrate is also included, sound watch core piece is connected electrically on ceramic substrate by inverted structure, cavity is remained between sound watch core piece and ceramic substrate, be additionally provided with for encapsulating the resin film of sound watch core piece on ceramic substrate；Described SAW resonator overall dimensions are not more than 2.0 mm *, 1.6 mm * 0.6mm；Length is not more than 2.0 mm, and width is not more than 1.6 mm, and height is not more than 0.6mm.Unprecedented breakthrough is realized on device volume and cost, the CSP encapsulation of SAW resonator is realized.
Description
Technical field
The present invention relates to the encapsulating structure of SAW resonator and packaging technology technical field.
Background technology
SAW device is to be simulated the device that process to the signal of telecommunication using surface acoustic wave.
As shown in fig. 1, SAW resonator is to place discontinuous construction gold respectively on interdigital 11 both sides of transducing grating array
The reflecting grating array 12 of category band.The metal band that each grating array is wide by hundreds of or thousands of with interval is respectively λ/4 is constituted.This
It is a kind of distributed feedback structure.Although sound wave reflects very little on each metal band, all reflected signals are all with synchronization
Frequency is added with homophase, so that sound wave is close to all reflections and constitutes resonator.SAW resonator is humorous with bulk wave crystal
The device that shakes is compared, and has the advantages that resonant frequency height and vibration resistance.
SAW resonator is widely used in car door remote switch, internal seizure system, data link, tire pressure prison
Control system, wireless security system, the reading of wireless bar code, Wireless Keyboard, wireless mouse, wireless operating bar, remote control lamp switch etc.
In civilian consumer electronics product, at tens or so, consumption is huge for domestic annual consumption.
SAW resonator mainly has two class wrapper forms, the larger metal pin encapsulation of volume at present（Such as Fig. 2 institutes
Show）With 3.0 mm *, 3.0 mm *, 1.3 mm and the LTCC ceramic packages (as shown in Figure 3) of the above.Wherein metal pin encapsulates valency
Lattice are low, it is impossible to produce for automatic chip mounting, and reliability is low, is mainly used in low-end consumer market；LTCC ceramic cavities are sealed
Dress price is of a relatively high, and reliability is high, for the high-end consumption market such as automotive electronics.
With the subminiaturization of electronic correlation product, the demand of more cost degradation, to core parts-surface acoustic wave resonance
Device proposes new volume requirement.Therefore, the resonator of either metal pin encapsulation, or LTCC ceramic cavities encapsulation, in body
All must significantly reduce in product, also further will reduce in price.
The content of the invention
In sum, it is an object of the invention to solve existing SAW resonator encapsulation volume greatly, or it is packaged into
This high technical deficiency, proposes the SAW resonator and processing technology of a kind of wafer-level package.
To solve technical problem proposed by the invention, the technical scheme for adopting for：
A kind of SAW resonator of wafer-level package, including sound watch core piece, it is characterised in that：Ceramic base is included also
Plate, sound watch core piece are connected electrically on ceramic substrate by inverted structure, remain with cavity between sound watch core piece and ceramic substrate,
It is additionally provided with ceramic substrate for encapsulating the resin film of sound watch core piece；Described SAW resonator overall dimensions are not more than
2.0 mm *1.6 mm *0.6mm；Length is not more than 2.0 mm, and width is not more than 1.6 mm, and height is not more than 0.6mm.
Described sound watch core piece passes through between metal ball and ceramic substrate by electrically supporting connection.
Described sound watch core piece is convex by the plating for plating copper substrate, plating Ni interlayer and tin plating outer layer are constituted by plated bumps
By electrically supporting connection between block and ceramic substrate.
Described sound watch core piece includes piezoelectric substrate, and piezoelectric substrate is provided with interdigital transducing grating array, reflecting grating array, input
Plant ball electrode district and ball electrode district is planted in output；Input is planted ball electrode district and is electrically connected with interdigital transducing grating array, and ball electrode is planted in output
The reflected grating array in area is electrically connected with interdigital transducing grating array.
Described ceramic substrate is HTCC ceramic substrates or LTCC ceramic substrates.
The as described above processing technology of the SAW resonator of wafer-level package, it is characterised in that the technique include as
Lower step：
A）, make ceramic substrate, ceramic substrate top surface includes pad, and bottom surface includes and pad corresponds the electrically used company of wearing
The electrode terminal for connecing；
B）, on the electrode district of sound watch core piece implanted metal ball, formed raised support block；
C）, sound watch core piece is inverted in above ceramic substrate, make sound watch core piece by the weldering on metal ball and ceramic substrate top surface
Disk corresponds electric connection, sound watch core piece and ceramic substrate top surface shape cavity；
D）, cover one layer of resin film above the ceramic substrate, sound watch core piece is encapsulated on ceramic substrate；
E）, resin film and ceramic substrate split, obtain the SAW resonator of some single wafer-level packages into
Product.
Beneficial effects of the present invention are：The present invention is loaded on sound watch core piece on ceramic substrate using flip-chip packaged structure, it
It is packaged with resin film afterwards, so as in the case where ensureing that performance does not decline, obtain size for 2.0 mm *, 1.6 mm *
0.6mm and smaller size of SAW resonator product, realize unprecedented breakthrough on device volume and cost, real
The CSP encapsulation of SAW resonator is showed.CSP is the abbreviation of Chip Scale Package, that is, wafer-level package.
The concept of CSP originates from IC industries, definition substantially be the area ratio of chip area and packaging body more than 80%, sound table row industry
Be specifically defined is that the packaging body length of side is less than 1 millimeter with the difference of chip.When invention size is 2.0 mm *, 1.6 mm * 0.6mm,
With traditional SMD（Surface mount）3.0 mm * 3.0mm*1.3mm of product compare, the present invention volume and cost only have respectively
The 16% of SMD and 25%.
Description of the drawings
Basic structure schematic diagrams of the Fig. 1 for SAW resonator chip；
Fig. 2 is the SAW resonator structural representation of conventional metals pin encapsulation；
Fig. 3 is the SAW resonator structural representation of traditional QCC8B types LTCC ceramic cavity encapsulation；
Fig. 4 is the SAW resonator structural representation of traditional SMD encapsulation；
Fig. 5 is the SAW resonator structural representation of the CSP encapsulation of the present invention；
Fig. 6 is the structural representation of the sound watch core piece of the present invention；
Fig. 7 is the structural representation of the ceramic substrate of the present invention.
Specific embodiment
The structure of the present invention is further described below in conjunction with the specific embodiment of accompanying drawing and present invention choosing.
With reference to shown in Fig. 5 to Fig. 7, the SAW resonator of the wafer-level package of the present invention includes sound watch core piece 1
With ceramic substrate 2；Sound watch core piece 1 is connected electrically on ceramic substrate 2 by inverted structure, between sound watch core piece 1 and ceramic substrate 2
Cavity 3 is remained with, is additionally provided with ceramic substrate 2 for encapsulating the resin film 4 of sound watch core piece 1.
Except piezoelectric substrate 16 is included, piezoelectric substrate 16 is provided with interdigital transducing grating array 11 and reflecting grating array to sound watch core piece 1
Outside 12, also include the input on piezoelectric substrate 16 and plant ball electrode district 13 and output plant ball electrode district 14；Ball is planted in input
Electrode district 13 is electrically connected with interdigital transducing grating array 11, and output is planted 14 reflected grating array 12 of ball electrode district and is electrically connected with interdigital transducing
Grating array 11.Ball electrode district 13 is planted in input and output is planted ball electrode district 14 and is aligned with corresponding pad on ceramic substrate 2 21,22 respectively
It is electrically connected with.
Ceramic substrate 2 can be HTCC ceramic substrates or LTCC ceramic substrates.
In order to realize that sound watch core piece 1 forms cavity 3 with ceramic substrate 2 so that interdigital 11 He of transducing grating array of sound watch core piece 1
Reflecting grating array can be in cavity 3, and sound watch core piece 1 passes through between metal ball 5 and ceramic substrate 2 by electrically supporting connection.In addition,
Metal ball 5 can also be replaced to play electric connection and supporting role using plated bumps, during plated bumps are by copper substrate, nickel plating is plated
Interbed and tin plating outer layer composition.
That is to say that the present invention breaks the Conventional processing methods during SAW resonator makes.In sound watch core piece and base electricity
With current Flip Chip in performance turn on process（Upside-down mounting）Technology generations replace traditional Wire Bonding（Metal lead wire is bonded）
Technique；Replace traditional SMD with vacuum resin coating technique in device enclosed package process（Surface mount）Technique.SMD（Table
Face mounts）Technique be as shown in figure 4, be by sound watch core piece 61 by 63 formal dress of bonding die glue on package cavity structure base board 62, pass through
Tinsel 64 and electrode terminal welding are played, is packaged with parallel soldering and sealing cap 65 afterwards, general minimum 3.0 mm of its volume
*3.0mm*1.3mm；And the SAW resonator overall dimensions of the present invention are generally not greater than 2.0 mm *, 1.6 mm *
0.6mm；And length is not more than 2.0 mm, width is not more than 1.6 mm, and height is not more than 0.6mm；Minimum can reach 2.0
mm *1.2 mm *0.55mm。
The processing technology of the SAW resonator of the wafer-level package of the present invention, comprises the steps：
A）, make ceramic substrate 2,2 top surface of ceramic substrate includes pad 21,22, bottom surface include with pad 21,22 1 a pair
Electrotropism is used to the electrode terminal 211,221 for wearing connection；
B）, on the electrode district 13,14 of sound watch core piece 1 implanted metal ball 5, formed raised support block；
C）, sound watch core piece 1 is inverted in above ceramic substrate 2, make sound watch core piece 1 by metal ball 5 and 2 top surface of ceramic substrate
Pad 21,22 correspond and be electrically connected with, sound watch core piece 1 and 2 top surface shape cavity of ceramic substrate；
D）, cover one layer of resin film 4 above the ceramic substrate 2, sound watch core piece 1 is encapsulated on ceramic substrate 2；
E）, resin film 4 and ceramic substrate 1 split, obtain the SAW resonator of some single wafer-level packages
Finished product.
The process of the present invention is easy to batch production, and production efficiency is the several times of SMD type packaging technology, production efficiency
It is high.
Claims (6)
1. a kind of SAW resonator of wafer-level package, including sound watch core piece, it is characterised in that：Ceramic base is included also
Plate, sound watch core piece are connected electrically on ceramic substrate by inverted structure, remain with cavity between sound watch core piece and ceramic substrate,
It is additionally provided with ceramic substrate for encapsulating the resin film of sound watch core piece；Described SAW resonator overall dimensions are not more than
2.0 mm *1.6 mm *0.6mm；Length is not more than 2.0 mm, and width is not more than 1.6 mm, and height is not more than 0.6mm.
2. the SAW resonator of wafer-level package according to claim 1, it is characterised in that：Described sound watch core piece
By being connected by electrically support between metal ball and ceramic substrate.
3. the SAW resonator of wafer-level package according to claim 1, it is characterised in that：Described sound watch core piece
By plated bumps by plating between copper substrate, plating Ni interlayer and the plated bumps that constitute of tin plating outer layer and ceramic substrate by electrical
Support connection.
4. the SAW resonator of wafer-level package according to claim 2, it is characterised in that：Described sound watch core piece
Piezoelectric substrate is included, piezoelectric substrate is provided with interdigital transducing grating array, reflecting grating array, ball electrode district is planted in input and ball electricity is planted in output
Polar region；Input is planted ball electrode district and is electrically connected with interdigital transducing grating array, and output is planted the reflected grating array of ball electrode district and is electrically connected with fork
Refer to transducing grating array.
5. the SAW resonator of wafer-level package according to claim 1, it is characterised in that：Described ceramic substrate
For HTCC ceramic substrates or LTCC ceramic substrates.
6. as described in any one of claim 1 to 5 SAW resonator of wafer-level package processing technology, it is characterised in that
The technique comprises the steps：
A）, make ceramic substrate, ceramic substrate top surface includes pad, and bottom surface includes and pad corresponds the electrically used company of wearing
The electrode terminal for connecing；
B）, on the electrode district of sound watch core piece implanted metal ball, formed raised support block；
C）, sound watch core piece is inverted in above ceramic substrate, make sound watch core piece by the weldering on metal ball and ceramic substrate top surface
Disk corresponds electric connection, sound watch core piece and ceramic substrate top surface shape cavity；
D）, cover one layer of resin film above the ceramic substrate, sound watch core piece is encapsulated on ceramic substrate；
E）, resin film and ceramic substrate split, obtain the SAW resonator of some single wafer-level packages into
Product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611109405.4A CN106549648A (en) | 2016-12-06 | 2016-12-06 | A kind of SAW resonator and processing technology of wafer-level package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611109405.4A CN106549648A (en) | 2016-12-06 | 2016-12-06 | A kind of SAW resonator and processing technology of wafer-level package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106549648A true CN106549648A (en) | 2017-03-29 |
Family
ID=58396420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611109405.4A Pending CN106549648A (en) | 2016-12-06 | 2016-12-06 | A kind of SAW resonator and processing technology of wafer-level package |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106549648A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107743022A (en) * | 2017-10-19 | 2018-02-27 | 深圳华远微电科技有限公司 | Ceramic CSP package substrate constructions |
| CN109148680A (en) * | 2018-09-26 | 2019-01-04 | 深圳市麦捷微电子科技股份有限公司 | Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture |
| CN109473539A (en) * | 2018-12-14 | 2019-03-15 | 苏州科阳光电科技有限公司 | A kind of filter chip mould group and preparation method thereof |
| CN109494164A (en) * | 2018-09-19 | 2019-03-19 | 中电科技德清华莹电子有限公司 | A method of preparing miniaturization switch filter |
| CN110535450A (en) * | 2019-08-29 | 2019-12-03 | 无锡嘉硕科技有限公司 | Surface acoustic wave filter ceramic package and method with special screen effect |
| CN111010788A (en) * | 2019-12-17 | 2020-04-14 | 深圳市麦捷微电子科技股份有限公司 | Method for eliminating electrostatic adsorption of surface acoustic wave filter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11122072A (en) * | 1997-10-14 | 1999-04-30 | Fujitsu Ltd | Surface acoustic wave device |
| JP2007116628A (en) * | 2005-10-24 | 2007-05-10 | Kyocera Corp | Surface acoustic-wave device and communication apparatus |
| JP2007184690A (en) * | 2006-01-05 | 2007-07-19 | Matsushita Electric Ind Co Ltd | Antenna duplexer |
| US20160049920A1 (en) * | 2013-02-27 | 2016-02-18 | Kyocera Corporation | Acoustic wave element, duplexer, and communication module |
| CN206323356U (en) * | 2016-12-06 | 2017-07-11 | 深圳市麦高锐科技有限公司 | A kind of SAW resonator of wafer-level package |
-
2016
- 2016-12-06 CN CN201611109405.4A patent/CN106549648A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11122072A (en) * | 1997-10-14 | 1999-04-30 | Fujitsu Ltd | Surface acoustic wave device |
| JP2007116628A (en) * | 2005-10-24 | 2007-05-10 | Kyocera Corp | Surface acoustic-wave device and communication apparatus |
| JP2007184690A (en) * | 2006-01-05 | 2007-07-19 | Matsushita Electric Ind Co Ltd | Antenna duplexer |
| US20160049920A1 (en) * | 2013-02-27 | 2016-02-18 | Kyocera Corporation | Acoustic wave element, duplexer, and communication module |
| CN206323356U (en) * | 2016-12-06 | 2017-07-11 | 深圳市麦高锐科技有限公司 | A kind of SAW resonator of wafer-level package |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107743022A (en) * | 2017-10-19 | 2018-02-27 | 深圳华远微电科技有限公司 | Ceramic CSP package substrate constructions |
| CN109494164A (en) * | 2018-09-19 | 2019-03-19 | 中电科技德清华莹电子有限公司 | A method of preparing miniaturization switch filter |
| CN109148680A (en) * | 2018-09-26 | 2019-01-04 | 深圳市麦捷微电子科技股份有限公司 | Epoxy resin packaging ceramic substrate warp degree supplementally takes process and supplementally takes fixture |
| CN109473539A (en) * | 2018-12-14 | 2019-03-15 | 苏州科阳光电科技有限公司 | A kind of filter chip mould group and preparation method thereof |
| CN109473539B (en) * | 2018-12-14 | 2024-04-12 | 苏州科阳半导体有限公司 | Filter chip module and preparation method thereof |
| CN110535450A (en) * | 2019-08-29 | 2019-12-03 | 无锡嘉硕科技有限公司 | Surface acoustic wave filter ceramic package and method with special screen effect |
| CN111010788A (en) * | 2019-12-17 | 2020-04-14 | 深圳市麦捷微电子科技股份有限公司 | Method for eliminating electrostatic adsorption of surface acoustic wave filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106549648A (en) | A kind of SAW resonator and processing technology of wafer-level package | |
| CN101018044B (en) | Filter module providing function related to multi band and method thereof | |
| US6518501B1 (en) | Electronic part and method of assembling the same | |
| EP1489736B1 (en) | Piezoelectric oscillator, manufacturing method therefor, mobile phone apparatus using piezoelectric oscillator, and electronic apparatus using piezoelectric oscillator | |
| US5594275A (en) | J-leaded semiconductor package having a plurality of stacked ball grid array packages | |
| KR101460401B1 (en) | Module and method of manufacturing a module | |
| CN106301283A (en) | The encapsulating structure of SAW filter and manufacture method | |
| TW200533059A (en) | Piezo-electric oscillator and method of manufacturing the same | |
| WO2006093078A1 (en) | Surface acoustic wave device | |
| JP2013546193A (en) | Packaged electronic devices | |
| CN105958963B (en) | A kind of encapsulating structure and its manufacturing method | |
| CN206195735U (en) | Encapsulation structure of sound surface wave filter | |
| CN206323356U (en) | A kind of SAW resonator of wafer-level package | |
| US8022594B2 (en) | Surface acoustic wave device | |
| CN100456635C (en) | Electronic device and method of fabricating the same | |
| CN111599789B (en) | Ceramic leadless chip type packaging structure | |
| JP4066952B2 (en) | Electronic component element, electronic component, and communication device | |
| CN102446775B (en) | Non-carrier semiconductor packaging component and manufacturing method thereof | |
| CN209000955U (en) | A kind of encapsulating structure of sound surface filtering chip | |
| US20070194430A1 (en) | Substrate of chip package and chip package structure thereof | |
| JP2007097075A (en) | Piezoelectric oscillator and method for manufacturing the same | |
| US20030080832A1 (en) | Single chip scale package | |
| CN101447443B (en) | Method for manufacturing high-frequency integrated circuit encapsulation structure | |
| CN100499097C (en) | High-frequency integrated circuit packaging construction for improving connectivity of embedded projection and manufacturing method thereof | |
| WO2004077559A1 (en) | Integrated circuit package and method for producing it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170329 |