TW201521162A - Resin sheet for hollow electronic device encapsulation and method for manufacturing hollow electronic device package - Google Patents

Resin sheet for hollow electronic device encapsulation and method for manufacturing hollow electronic device package Download PDF

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Publication number
TW201521162A
TW201521162A TW103126018A TW103126018A TW201521162A TW 201521162 A TW201521162 A TW 201521162A TW 103126018 A TW103126018 A TW 103126018A TW 103126018 A TW103126018 A TW 103126018A TW 201521162 A TW201521162 A TW 201521162A
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resin layer
resin
electronic device
filler
hollow
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TW103126018A
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Chinese (zh)
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Eiji Toyoda
Hiroyuki Senzai
Tsuyoshi Ishizaka
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Nitto Denko Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Acoustics & Sound (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Provided are: a resin sheet for hollow electronic device encapsulation, which is capable of securing the hollow portion of a hollow electronic device package and is also capable of suppressing warping of the hollow electronic device package; and a hollow electronic device package. The present invention relates to a resin sheet for hollow electronic device encapsulation, which is provided with a first resin layer and a second resin layer, and wherein the first resin layer and the second resin layer contain a filler and satisfy formula (1) and formula (2). [content of filler in first resin layer (vol%)] < [content of filler in second resin layer (vol%)] (1) [viscosity of first resin layer] > [viscosity of second resin layer] (2).

Description

中空型電子裝置密封用樹脂薄片及中空型電子裝置封裝體之製造方法 Resin sheet for sealing hollow electronic device and method for manufacturing hollow type electronic device package

本發明是有關中空型電子裝置密封用樹脂薄片及中空型電子裝置封裝體之製造方法。 The present invention relates to a resin sheet for sealing a hollow electronic device and a method of manufacturing a hollow type electronic device package.

以往作為用來製造使SAW(Surface Acoustic Wave:表面聲波)濾波器等之中空型電子裝置被樹脂密封的中空型電子裝置封裝體的方法,據知是一種將固定在基板的中空型電子裝置利用熱硬化性樹脂薄片進行密封的方法(例如:參照專利文獻1)。 A method for manufacturing a hollow type electronic device package in which a hollow type electronic device such as a SAW (Surface Acoustic Wave) filter is sealed with a resin is known as a hollow type electronic device to be fixed to a substrate. A method of sealing a thermosetting resin sheet (for example, refer to Patent Document 1).

〔先行技術文獻〕 [prior technical literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本特開第2006-19714號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-19714

在中空型電子裝置封裝體中,用來確保其中 空部分,或用來抑制中空型電子裝置封裝體的翹曲是很重要的。 In a hollow type electronic device package, to ensure that The empty portion, or the warpage used to suppress the package of the hollow type electronic device, is important.

本發明係解決前述課題,其目的在於提供一種可確保中空型電子裝置封裝體的中空部分,且能夠抑制中空型電子裝置封裝體之翹曲的中空型電子裝置密封用樹脂薄片及中空型電子裝置封裝體。 The present invention has been made in view of the above-mentioned problems, and an object of the invention is to provide a hollow electronic device sealing resin sheet and a hollow type electronic device capable of ensuring a hollow portion of a hollow type electronic device package and suppressing warpage of the hollow type electronic device package. Package.

本發明係有關一種具備第1樹脂層及第2樹脂層,前述第1樹脂層及前述第2樹脂層包含填充物,滿足下記式(1)及下記式(2)的中空型電子裝置密封用樹脂薄片,前述第1樹脂層中的前述填充物的含量(體積%)<前述第2樹脂層中的前述填充物的含量(體積%) (1) 前述第1樹脂層的黏度>前述第2樹脂層的黏度 (2)。 According to the present invention, the first resin layer and the second resin layer are provided, and the first resin layer and the second resin layer include a filler, and the hollow type electronic device that satisfies the following formula (1) and the following formula (2) is used for sealing In the resin sheet, the content (% by volume) of the filler in the first resin layer is less than the content (% by volume) of the filler in the second resin layer. (1) Viscosity of the first resin layer > the second The viscosity of the resin layer (2).

因第2樹脂層2中的填充物的含量稍多於第1樹脂層1中的填充物的含量,故可令第2樹脂層2達到用來抑制中空型電子裝置封裝體之翹曲的作用。另外,因第1樹脂層1的黏度稍高於第2樹脂層2的黏度,故可抑制第1樹脂層1侵入至中空型電子裝置封裝體的中空部分。 Since the content of the filler in the second resin layer 2 is slightly larger than the content of the filler in the first resin layer 1, the second resin layer 2 can be made to suppress the warpage of the package of the hollow electronic device. . Further, since the viscosity of the first resin layer 1 is slightly higher than the viscosity of the second resin layer 2, it is possible to prevent the first resin layer 1 from intruding into the hollow portion of the hollow electronic device package.

前述第1樹脂層的黏度相對於前述第2樹脂層的黏度之比(前述第1樹脂層的黏度/前述第2樹脂層的黏度),以3~1000為佳。 The ratio of the viscosity of the first resin layer to the viscosity of the second resin layer (the viscosity of the first resin layer / the viscosity of the second resin layer) is preferably from 3 to 1,000.

前述第1樹脂層的拉伸儲存彈性模數相對於前述第2樹脂層的拉伸儲存彈性模數之比(第1樹脂層的拉伸儲存彈性模數/第2樹脂層的拉伸儲存彈性模數),以5~500為佳。 The ratio of the tensile storage elastic modulus of the first resin layer to the tensile storage elastic modulus of the second resin layer (the tensile storage elastic modulus of the first resin layer / the tensile storage elasticity of the second resin layer) Modulus), preferably 5~500.

前述第1樹脂層中的前述填充物的平均粒徑相對於前述第2樹脂層中的前述填充物的平均粒徑之比(前述第1樹脂層中的前述填充物的平均粒徑/前述第2樹脂層中的前述填充物的平均粒徑),以0.01~0.5為佳。 a ratio of an average particle diameter of the filler in the first resin layer to an average particle diameter of the filler in the second resin layer (average particle diameter of the filler in the first resin layer / the first The average particle diameter of the filler in the resin layer is preferably 0.01 to 0.5.

前述第1樹脂層中的前述填充物的含量為69體積%以下,前述第2樹脂層中的前述填充物的含量超過69體積%為佳。 The content of the filler in the first resin layer is 69% by volume or less, and the content of the filler in the second resin layer is preferably 69% by volume.

前述第1樹脂層的厚度相對於前述第2樹脂層的厚度之比(前述第1樹脂層的厚度/前述第2樹脂層的厚度),以0.05~0.3為佳。 The ratio of the thickness of the first resin layer to the thickness of the second resin layer (the thickness of the first resin layer / the thickness of the second resin layer) is preferably 0.05 to 0.3.

前述第1樹脂層的黏度以10000Pa.s以上為佳。 The viscosity of the first resin layer is 10,000 Pa. Above s is better.

本發明是有關還包含:準備前述中空型電子裝置密封用樹脂薄片的工程;和準備用來搭載中空型電子裝置之基板的工程;和以前述第1樹脂層與前述中空型電子裝置及前述基板進行接觸的方式,將前述中空型電子裝置密封用樹脂薄片層積在前述基板之上的工程的中空型電子裝置封裝體之製造方法。 The present invention further includes: a process of preparing the resin sheet for sealing a hollow electronic device; and a process of preparing a substrate for mounting the hollow type electronic device; and the first resin layer, the hollow type electronic device, and the substrate A method of manufacturing a hollow type electronic device package in which a resin sheet for sealing a hollow electronic device is laminated on the substrate is formed by a contact method.

1‧‧‧第1樹脂層 1‧‧‧1st resin layer

2‧‧‧第2樹脂層 2‧‧‧2nd resin layer

11‧‧‧樹脂薄片 11‧‧‧Resin sheet

12‧‧‧印刷配線基板 12‧‧‧Printed wiring substrate

13‧‧‧SAW濾波器 13‧‧‧SAW filter

13a‧‧‧突起電極 13a‧‧‧protruding electrode

14‧‧‧中空部分 14‧‧‧ hollow part

15、16‧‧‧電子裝置封裝體 15, 16‧‧‧Electronic device package

17‧‧‧凸塊 17‧‧‧Bumps

18‧‧‧基板 18‧‧‧Substrate

21‧‧‧樹脂薄片 21‧‧‧Resin sheet

22‧‧‧氧化鈻基板 22‧‧‧Oxide substrate

23‧‧‧試驗工作台 23‧‧‧Test Workbench

24‧‧‧試驗工具 24‧‧‧Testing tools

[第1圖]實施形態1的樹脂薄片的剖面模式圖。 Fig. 1 is a schematic cross-sectional view showing a resin sheet of the first embodiment.

[第2圖]搭載著SAW濾波器的印刷配線基板的剖面模式圖。 [Fig. 2] A cross-sectional schematic view of a printed wiring board on which a SAW filter is mounted.

[第3圖]模式表示利用實施形態1的樹脂薄片來密封SAW濾波器之樣態的圖。 [Fig. 3] A view showing a state in which the SAW filter is sealed by the resin sheet of the first embodiment.

[第4圖]模式表示將SAW濾波器封裝體進行劃線之樣態的圖。 [Fig. 4] A mode showing a state in which a SAW filter package is scribed.

[第5圖]模式表示將晶片狀的SAW濾波器封裝體安裝在基板之樣態的圖。 [Fig. 5] A view showing a state in which a wafer-shaped SAW filter package is mounted on a substrate.

[第6圖]模式表示用來測定剪斷接著力之樣態的圖。 [Fig. 6] The mode shows a diagram for determining the state of the shearing force.

於以下揭示實施形態,詳細說明本發明,但本發明並不限於該些實施形態。 The present invention will be described in detail below with reference to the embodiments, but the invention is not limited thereto.

〔實施形態1〕 [Embodiment 1]

第1圖是實施形態1的樹脂薄片11的剖面模式圖。樹脂薄片11是用來層積第1樹脂層1與第2樹脂層2的構造。再者,在樹脂薄片11的兩面,可設置聚乙稀對苯二甲酯(PET)薄膜等的支持體。為了易於進行自樹脂薄片11的剝離,可對支持體施行脫模處理。 Fig. 1 is a schematic cross-sectional view showing a resin sheet 11 of the first embodiment. The resin sheet 11 is a structure for laminating the first resin layer 1 and the second resin layer 2. Further, a support such as a polyethylene terephthalate (PET) film may be provided on both surfaces of the resin sheet 11. In order to facilitate the peeling of the resin sheet 11, the release body can be subjected to a mold release treatment.

樹脂薄片11是滿足下記式(1)及下記式 (2)。 The resin sheet 11 satisfies the following formula (1) and the following formula (2).

第1樹脂層1中的填充物的含量(體積%)<第2樹脂層2中的填充物的含量(體積%) (1) Content (% by volume) of the filler in the first resin layer 1 <Content (% by volume) of the filler in the second resin layer 2 (1)

第1樹脂層1的黏度>第2樹脂層2的黏度 (2) Viscosity of the first resin layer 1 > Viscosity of the second resin layer 2 (2)

因第2樹脂層2中的填充物的含量稍多於第1樹脂層1中的填充物的含量,故可令第2樹脂層2達到抑制中空型電子裝置封裝體之翹曲的作用。並且因第1樹脂層1的黏度稍高於第2樹脂層2的黏度,故可抑制第1樹脂層1侵入至中空型電子裝置封裝體的中空部分。 Since the content of the filler in the second resin layer 2 is slightly larger than the content of the filler in the first resin layer 1, the second resin layer 2 can be made to suppress the warpage of the hollow electronic device package. Further, since the viscosity of the first resin layer 1 is slightly higher than the viscosity of the second resin layer 2, the first resin layer 1 can be prevented from intruding into the hollow portion of the hollow electronic device package.

第1樹脂層1的黏度相對於第2樹脂層2的黏度之比(第1樹脂層1的黏度/第2樹脂層2的黏度),佳為3以上、較佳為10以上。若為3以上,就能確保中空形成性。第1樹脂層1的黏度相對於第2樹脂層2的黏度之比,佳為1000以下、較佳為500以下。若為1000以下,對中空型電子裝置的樹脂填縫性良好。總之就是,可於成型時排除氣泡產生。 The ratio of the viscosity of the first resin layer 1 to the viscosity of the second resin layer 2 (the viscosity of the first resin layer 1 / the viscosity of the second resin layer 2) is preferably 3 or more, preferably 10 or more. If it is 3 or more, hollow formability can be ensured. The ratio of the viscosity of the first resin layer 1 to the viscosity of the second resin layer 2 is preferably 1,000 or less, preferably 500 or less. When it is 1000 or less, the resin sealing property of a hollow type electronic device is favorable. In short, the generation of bubbles can be eliminated during molding.

第1樹脂層1的拉伸儲存彈性模數相對於第2樹脂層2的拉伸儲存彈性模數之比(第1樹脂層1的拉伸儲存彈性模數/第2樹脂層2的拉伸儲存彈性模數),佳為5以上、較佳為10以上。若為5以上,樹脂薄片11不會過於柔軟,操作性良好。第1樹脂層1的拉伸儲存彈性模數相對於第2樹脂層2的拉伸儲存彈性模數之比,佳為500以下、較佳為300以下。若為500以下,操作時,就能防止樹脂薄片11的破裂和缺損。 The ratio of the tensile storage elastic modulus of the first resin layer 1 to the tensile storage elastic modulus of the second resin layer 2 (the tensile storage elastic modulus of the first resin layer 1 / the stretching of the second resin layer 2) The storage elastic modulus is preferably 5 or more, preferably 10 or more. When it is 5 or more, the resin sheet 11 is not too soft, and workability is favorable. The ratio of the tensile storage elastic modulus of the first resin layer 1 to the tensile storage elastic modulus of the second resin layer 2 is preferably 500 or less, preferably 300 or less. If it is 500 or less, the crack and the defect of the resin sheet 11 can be prevented at the time of operation.

第2樹脂層2中的填充物的平均粒徑,稍大於第1樹脂層1中的填充物的平均粒徑為佳。提高第2樹脂層2中的填充物充填量,就能提高電子裝置封裝體的可靠性。而且,對減低翹曲也很有效。 The average particle diameter of the filler in the second resin layer 2 is preferably slightly larger than the average particle diameter of the filler in the first resin layer 1. By increasing the filling amount of the filler in the second resin layer 2, the reliability of the electronic device package can be improved. Moreover, it is also effective for reducing warpage.

例如,第1樹脂層1中的填充物的平均粒徑相對於第2樹脂層2中的填充物的平均粒徑之比(第1樹脂層1中的填充物的平均粒徑/第2樹脂層2中的填充物的平均粒徑),佳為0.01以上、較佳為0.1以上。若為0.01以上,就可完成高可靠性與中空成形性之兩者兼備的密封薄片11之設計。第1樹脂層1中的填充物的平均粒徑相對於第2樹脂層2中的填充物的平均粒徑之比,佳為0.5以下、較佳為0.4以下。若為0.5以下,由於層間密著性良好,因此能夠防止層間的剝離等。 For example, the ratio of the average particle diameter of the filler in the first resin layer 1 to the average particle diameter of the filler in the second resin layer 2 (the average particle diameter of the filler in the first resin layer 1 / the second resin) The average particle diameter of the filler in the layer 2 is preferably 0.01 or more, preferably 0.1 or more. When it is 0.01 or more, the design of the sealing sheet 11 which has both high reliability and hollow formability can be completed. The ratio of the average particle diameter of the filler in the first resin layer 1 to the average particle diameter of the filler in the second resin layer 2 is preferably 0.5 or less, preferably 0.4 or less. When it is 0.5 or less, since the interlayer adhesion is good, peeling between layers and the like can be prevented.

第1樹脂層1的厚度相對於第2樹脂層2的厚度之比(第1樹脂層1的厚度/第2樹脂層2的厚度),佳為0.05以上。若為0.05以上,於中空型電子裝置封裝體之成形時,就能防止第1樹脂層1在晶片邊緣(chip edge)等被破壞。第1樹脂層1的厚度相對於第2樹脂層2的厚度之比,佳為0.3以下、較佳為0.15以下、更佳為0.1以下。若為0.3以下,就能抑制中空型電子裝置封裝體的翹曲。 The ratio of the thickness of the first resin layer 1 to the thickness of the second resin layer 2 (the thickness of the first resin layer 1 / the thickness of the second resin layer 2) is preferably 0.05 or more. When it is 0.05 or more, it is possible to prevent the first resin layer 1 from being broken at the chip edge or the like during molding of the hollow type electronic device package. The ratio of the thickness of the first resin layer 1 to the thickness of the second resin layer 2 is preferably 0.3 or less, preferably 0.15 or less, more preferably 0.1 or less. When it is 0.3 or less, the warpage of the hollow type electronic device package can be suppressed.

第1樹脂層1,係填充物含量比第2樹脂層2還少,但黏度比第2樹脂層2還高。例如:可藉由使第1樹脂層1含有比較多量的彈性體成份,就能得到高黏度的 第1樹脂層1。而且,藉由使第1樹脂層1含有平均粒徑小的填充物,就能得到高黏度的第1樹脂層1。 The first resin layer 1 has a smaller filler content than the second resin layer 2, but has a higher viscosity than the second resin layer 2. For example, a high viscosity can be obtained by making the first resin layer 1 contain a relatively large amount of elastomer component. The first resin layer 1. Further, by providing the first resin layer 1 with a filler having a small average particle diameter, the first resin layer 1 having a high viscosity can be obtained.

作為彈性體成份,可使用各種公知的材料。例如列舉有:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、6-尼龍和6-6尼龍之類的聚醯胺樹脂、苯氧基樹脂、丙烯酸系彈性體(丙烯酸樹脂)、PET和PBT等的飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異戊二烯-苯乙烯嵌段共聚物等等。當中,丙烯酸系彈性體為佳。 As the elastomer component, various known materials can be used. For example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, Saturated polycondensation of polycarbonate resin, thermoplastic polyimine resin, polyamide resin such as 6-nylon and 6-6 nylon, phenoxy resin, acrylic elastomer (acrylic resin), PET and PBT Ester resin, polyamidoximine resin, fluororesin, styrene-isoprene-styrene block copolymer, and the like. Among them, an acrylic elastomer is preferred.

作為丙烯酸系彈性體(丙烯酸樹脂),並未特別限定,列舉有:碳數30以下特別是碳數4~18的直鏈或具有分岐之烷基的丙烯酸或甲基丙烯酸之酯的1種或2種以上為成份的共聚物(丙烯酸共聚物)等等。作為前述烷基,例如列舉有:甲基、乙基、丙基、異丙基、n-丁基、t-丁基、異丁基、戊基、異戊基、己基、庚酸基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一基、月桂基、十三基、十四基、十八烷醯、十八基、或十二基等等。 The acrylic elastomer (acrylic resin) is not particularly limited, and examples thereof include one having a carbon number of 30 or less, particularly a linear or branched alkyl group of acrylic acid or methacrylic acid having a carbon number of 4 to 18 or Two or more kinds of copolymers (acrylic copolymers) and the like. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptanoic acid group, and a ring. Hexyl, 2-ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, eleven, lauryl, thirteen, tetradecyl, octadecyl, ten Eight bases, or twelve bases, and so on.

另外,作為形成共聚物(丙烯酸共聚物)的其他單體,並未特別限定,例如列舉有:如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、羥戊基丙烯酸酯、衣康酸、馬來酸、丁烯酸或巴豆酸等的羧基含有單體、如無水馬來酸或 無水衣康酸等的酸無水物單體、如(甲基)丙烯酸2-羥乙基、(甲基)丙烯酸2-羥丙基、(甲基)丙烯酸4-羥丁基、(甲基)丙烯酸6-羥己基、(甲基)丙烯酸8-羥辛基、(甲基)丙烯酸10-羥癸基、(甲基)丙烯酸12-月桂基羥或(4-羥基甲基環己基)-甲基丙烯酸酯等的羥胺基含有單體、如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、磺丙基(甲基)丙烯酸酯或(甲基)丙烯醯氧基萘磺酸等的磺酸基含有單體、或者如2-羥乙基丙烯磷酸等等的磷酸基含有單體。 Further, the other monomer forming the copolymer (acrylic acid copolymer) is not particularly limited, and examples thereof include, for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, hydroxypentyl acrylate, itaconic acid, and maleic acid. a carboxyl group such as crotonic acid or crotonic acid containing a monomer such as anhydrous maleic acid or An acid anhydride monomer such as anhydrous itaconic acid, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (methyl) 6-hydroxyhexyl acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-lauryl hydroxy (meth) acrylate or (4-hydroxymethylcyclohexyl)- The hydroxylamine group of the acrylate or the like contains a monomer such as styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methylpropanesulfonic acid, or (meth)acrylamide. The sulfonic acid group such as an acid, sulfopropyl (meth) acrylate or (meth) propylene decyl naphthalene sulfonic acid contains a monomer, or a phosphate group such as 2-hydroxyethyl propylene phosphate or the like contains a monomer.

丙烯酸樹脂之中,亦重量平均分子量10萬以上為佳,30萬~300萬較佳,50萬~200萬更佳。 Among the acrylic resins, the weight average molecular weight is preferably 100,000 or more, preferably 300,000 to 3,000,000, and more preferably 500,000 to 2,000,000.

再者,重量平均分子量是利用GPC(凝膠滲透層析法)進行測定,根據聚乙烯換算所算出的值。 In addition, the weight average molecular weight is a value calculated by GPC (gel permeation chromatography) and calculated from polyethylene conversion.

第1樹脂層1中的彈性體成份的含量較多為佳,例如:10重量%以上為佳,11重量%以上更佳。若為10重量%以上,就能提高第1樹脂層1的黏度,且能抑制第1樹脂層1侵入至中空型電子裝置封裝體的中空部分。一方面,第1樹脂層1中的彈性體成份的含量,50重量%以下為佳,20重量%以下更佳。若為50重量%以下,由於熱硬化後的硬度、強度提高,因此作為封裝體的可靠性很良好。 The content of the elastomer component in the first resin layer 1 is preferably large, and is preferably 10% by weight or more, more preferably 11% by weight or more. When the content is 10% by weight or more, the viscosity of the first resin layer 1 can be increased, and the first resin layer 1 can be prevented from intruding into the hollow portion of the hollow electronic device package. On the other hand, the content of the elastomer component in the first resin layer 1 is preferably 50% by weight or less, more preferably 20% by weight or less. When it is 50% by weight or less, since the hardness and strength after heat curing are improved, the reliability as a package is excellent.

第1樹脂層1,包含填充物。 The first resin layer 1 contains a filler.

作為填充物雖未特別限定,但以無機填充材 為佳。作為無機填充材,例如列舉有:石英玻璃、滑石、二氧化矽(溶融二氧化矽和結晶性二氧化矽等)、氧化鈻、氮化鈻、氮化矽、氮化硼等。當中,由能夠良好減少線膨脹係數的理由來看,以二氧化矽、氧化鈻為佳,以二氧化矽更佳。作為二氧化矽,由流動性優異的理由來看,以溶融二氧化矽為佳,以球狀溶融二氧化矽較佳。 The filler is not particularly limited, but is an inorganic filler. It is better. Examples of the inorganic filler include quartz glass, talc, cerium oxide (such as molten cerium oxide and crystalline cerium oxide), cerium oxide, cerium nitride, cerium nitride, and boron nitride. Among them, from the reason that the coefficient of linear expansion can be well reduced, it is preferable to use cerium oxide or cerium oxide, and cerium oxide is more preferable. As the cerium oxide, it is preferable to melt the cerium oxide and to melt the cerium oxide in a spherical shape from the viewpoint of excellent fluidity.

填充物的平均粒徑,理想為0.1μm以上、較好為0.5μm以上、更好為1μm以上。若為0.1μm以上,與其他的有機組成物的分散性良好,且易獲得均勻的組成物。填充物的平均粒徑,理想為15μm以下、較好為10μm以下。若為15μm以下,就能將第1樹脂層1的厚度薄化。而且,容易提高第1樹脂層1的黏度。 The average particle diameter of the filler is preferably 0.1 μm or more, preferably 0.5 μm or more, more preferably 1 μm or more. When it is 0.1 μm or more, the dispersibility with other organic compositions is good, and a uniform composition is easily obtained. The average particle diameter of the filler is preferably 15 μm or less, preferably 10 μm or less. When it is 15 μm or less, the thickness of the first resin layer 1 can be made thin. Moreover, it is easy to increase the viscosity of the first resin layer 1.

再者,平均粒徑,例如採用由母體任意抽出的試料,利用雷射繞射散射式粒度分布測定裝置進行測定就能導出。 Further, the average particle diameter can be derived by, for example, a sample which is arbitrarily extracted from the matrix and measured by a laser diffraction scattering type particle size distribution measuring apparatus.

第1樹脂層1中的填充物的含量,佳為69體積%以下,較佳為62體積%以下。若為69體積%以下,對中空型電子裝置的追從性(凹凸追從性)良好。另一方面,填充物的含量,佳為35體積%以上,較佳為45體積%以上。若為35體積%以上,就能得到良好的中空成形性。 The content of the filler in the first resin layer 1 is preferably 69% by volume or less, preferably 62% by volume or less. When it is 69% by volume or less, the followability (concave-convex followability) to the hollow type electronic device is good. On the other hand, the content of the filler is preferably 35 vol% or more, preferably 45 vol% or more. When it is 35 volume% or more, good hollow formability can be obtained.

填充物的含量,能以「重量%」為單位做說明。針對具代表性的二氧化矽的含量,以「重量%」為單位做說明。 The content of the filler can be described in terms of "% by weight". The content of representative cerium oxide is described in terms of "% by weight".

二氧化矽通常比重為2.2g/cm3,因此二氧化矽的含量(重量%)之最佳範圍例如為以下所述。 The cerium oxide usually has a specific gravity of 2.2 g/cm 3 , and therefore the optimum range of the content (% by weight) of cerium oxide is, for example, the following.

亦即,第1樹脂層1中的二氧化矽的含量,80重量%以下為佳,75重量%以下較佳。第1樹脂層1中的二氧化矽的含量,50重量%以上為佳,60重量%以上較佳。 In other words, the content of cerium oxide in the first resin layer 1 is preferably 80% by weight or less, and preferably 75% by weight or less. The content of cerium oxide in the first resin layer 1 is preferably 50% by weight or more, and more preferably 60% by weight or more.

再者,填充物含量69體積%,相當於80重量%。 Further, the filler content was 69% by volume, which was equivalent to 80% by weight.

氧化鈻通常比重為3.9g/cm3,因此氧化鈻的含量(重量%)的最佳範圍例如為以下所述。 The cerium oxide usually has a specific gravity of 3.9 g/cm 3 , and therefore the optimum range of the content (% by weight) of cerium oxide is, for example, the following.

亦即,第1樹脂層1中的氧化鈻的含量,88重量%以下為佳,84重量%以下較佳。第1樹脂層1中的氧化鈻的含量,64重量%以上為佳,73重量%以上較佳。 In other words, the content of cerium oxide in the first resin layer 1 is preferably 88% by weight or less, and preferably 84% by weight or less. The content of cerium oxide in the first resin layer 1 is preferably 64% by weight or more, and preferably 73% by weight or more.

第1樹脂層1,含有熱硬化性樹脂為佳。作為熱硬化性樹脂,列舉有:環氧樹脂、酚醛樹脂等等。第1樹脂層1,含有環氧樹脂較佳。 The first resin layer 1 preferably contains a thermosetting resin. Examples of the thermosetting resin include an epoxy resin, a phenol resin, and the like. The first resin layer 1 preferably contains an epoxy resin.

作為環氧樹脂,並未特別限定。例如可採用三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、改質雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、改質雙酚F型環氧樹脂、雙環戊二烯型環氧樹脂、苯酚酚醛清漆型環氧樹脂、苯氧基樹脂等的各種環氧樹脂。該環氧樹脂可單獨使用,或兩種以上併用。 The epoxy resin is not particularly limited. For example, a triphenylmethane type epoxy resin, a cresol novolac type epoxy resin, a biphenyl type epoxy resin, a modified bisphenol A type epoxy resin, a bisphenol A type epoxy resin, and a bisphenol F type may be used. Various epoxy resins such as epoxy resin, modified bisphenol F epoxy resin, dicyclopentadiene epoxy resin, phenol novolak epoxy resin, and phenoxy resin. The epoxy resins may be used singly or in combination of two or more.

由確保環氧樹脂之反應性的觀點來看,以環氧當量150~250、軟化點或融點50~130℃的常溫來固形的為佳。當中,由可靠性的觀點來看,三苯基甲烷型環氧 樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂較佳。 From the viewpoint of ensuring the reactivity of the epoxy resin, it is preferred to solidify at a normal temperature of an epoxy equivalent of 150 to 250, a softening point or a melting point of 50 to 130 °C. Among them, triphenylmethane type epoxy from the viewpoint of reliability A resin, a cresol novolak type epoxy resin, and a biphenyl type epoxy resin are preferable.

第1樹脂層1,含有酚醛樹脂為佳。 The first resin layer 1 preferably contains a phenol resin.

酚醛樹脂,只要是能在與環氧樹脂之間生起硬化反應就未特別限定。例如可使用苯酚酚醛樹脂、苯酚芳烷基樹脂、聯苯芳烷基樹脂、雙環戊二烯型酚醛樹脂、甲酚酚醛清漆樹脂、可溶酚醛樹脂等。該些酚醛樹脂可以單獨使用,或2種以上併用。 The phenol resin is not particularly limited as long as it can generate a curing reaction with the epoxy resin. For example, a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resol resin, or the like can be used. These phenol resins may be used singly or in combination of two or more.

作為酚醛樹脂,由與環氧樹脂之反應性的觀點來看,使用羥基當量70~250、軟化點50~110℃的為佳,當中若由硬化反應性高的觀點來看,最適合使用苯酚酚醛樹脂。另外,由可靠性的觀點來看,能使用像是苯酚芳烷基樹脂和聯苯芳烷基樹脂之類的低吸濕性樹脂最適合。 The phenolic resin is preferably a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C from the viewpoint of reactivity with an epoxy resin, and among them, phenol is most suitable from the viewpoint of high curing reactivity. Phenolic Resin. Further, from the viewpoint of reliability, a low hygroscopic resin such as a phenol aralkyl resin and a biphenyl aralkyl resin can be preferably used.

第1樹脂層1中的環氧樹脂及酚醛樹脂的合計含量,10重量%以上為佳。若為10重量%以上,對電子裝置、基板等而言可得到良好的接著力。第1樹脂層1中的環氧樹脂及酚醛樹脂的合計含量,50重量%以下為佳,35重量%以下較佳。若為50重量%以下,中空成形性良好。 The total content of the epoxy resin and the phenol resin in the first resin layer 1 is preferably 10% by weight or more. When it is 10% by weight or more, a good adhesion can be obtained for an electronic device, a substrate, or the like. The total content of the epoxy resin and the phenol resin in the first resin layer 1 is preferably 50% by weight or less, and preferably 35% by weight or less. When it is 50% by weight or less, the hollow moldability is good.

環氧樹脂與酚醛樹脂的配合比例,由硬化反應性的觀點來看,對環氧樹脂中的環氧基1當量而言,配合成酚醛樹脂中的羥基的合計為0.7~1.5當量為佳,較佳為0.9~1.2當量。 The mixing ratio of the epoxy resin to the phenol resin is preferably from 0.7 to 1.5 equivalents in terms of the curing reactivity, and the total amount of the hydroxyl groups in the phenolic resin is preferably from 0.7 to 1.5 equivalents per equivalent of the epoxy group in the epoxy resin. It is preferably 0.9 to 1.2 equivalents.

第1樹脂層1,含有硬化促進劑為佳。 The first resin layer 1 preferably contains a curing accelerator.

作為硬化促進劑,只要是能使環氧樹脂與酚醛樹脂進行硬化,就未特別限定,例如列舉有:三苯膦、四苯基鏻四苯基硼酸鹽等之有機磷系化合物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等之咪唑系化合物等等。 The curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organic phosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate, and 2-benzene. An imidazole compound such as benzyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole.

硬化促進劑的含量,相對於環氧樹脂及酚醛樹脂的合計100重量部,以0.1~5重量部為佳。 The content of the curing accelerator is preferably 0.1 to 5 parts by weight based on 100 parts by weight of the total of the epoxy resin and the phenol resin.

第1樹脂層1,除了前述成份以外,也可適宜的含有一般使用於密封樹脂之製造的配合劑,例如:難燃劑成份、矽烷耦合劑等。 The first resin layer 1 may suitably contain, in addition to the above-mentioned components, a compounding agent generally used for the production of a sealing resin, for example, a flame retardant component, a decane coupling agent, or the like.

第1樹脂層1可利用一般的製法製作。例如:將前述各成份溶解或分散於溶媒(例如:甲基乙基酮、乙酸乙酯等等)來調製塗佈液,將塗佈液塗佈到基材分隔件上之後,使塗佈膜乾燥。藉此,就能製作第1樹脂層1。 The first resin layer 1 can be produced by a general production method. For example, the above components are dissolved or dispersed in a solvent (for example, methyl ethyl ketone, ethyl acetate, etc.) to prepare a coating liquid, and after the coating liquid is applied onto the substrate separator, the coating film is applied. dry. Thereby, the first resin layer 1 can be produced.

第1樹脂層1的厚度,可配合中空部分的高度做適當設定。中空部分的高度,通常為15~50μm,因此第1樹脂層1的厚度,佳為15μm以上,較佳為20μm以上。若為15μm以上,在中空型電子裝置封裝體之成型時,能防止第1樹脂層1破損、第2樹脂層2侵入到中空部分。另外,第1樹脂層1的厚度,佳為70μm以下,較佳為50μm以下。若為70μm以下,可將樹脂薄片11全體的厚度薄化,製成薄型封裝體。 The thickness of the first resin layer 1 can be appropriately set in accordance with the height of the hollow portion. The height of the hollow portion is usually 15 to 50 μm. Therefore, the thickness of the first resin layer 1 is preferably 15 μm or more, and preferably 20 μm or more. When it is 15 μm or more, it is possible to prevent the first resin layer 1 from being damaged and the second resin layer 2 from entering the hollow portion during molding of the hollow type electronic device package. Further, the thickness of the first resin layer 1 is preferably 70 μm or less, and preferably 50 μm or less. When the thickness is 70 μm or less, the thickness of the entire resin sheet 11 can be reduced to form a thin package.

第1樹脂層1的黏度,佳為10000Pa.s以 上,較佳為20000Pa.s以上,更佳為20萬Pa.s以上。若為10000Pa.s以上,就能抑制第1樹脂層1侵入到中空型電子裝置封裝體的中空部分。第1樹脂層1的黏度,佳為50萬Pa.s以下,較佳為30萬Pa.s以下。若為50萬Pa.s以下,可得到良好的凹凸追從性。 The viscosity of the first resin layer 1 is preferably 10,000 Pa. s Preferably, it is 20000Pa. Above s, more preferably 200,000 Pa. s above. If it is 10000Pa. s or more, the first resin layer 1 can be prevented from intruding into the hollow portion of the hollow type electronic device package. The viscosity of the first resin layer 1 is preferably 500,000 Pa. Below s, preferably 300,000 Pa. s below. If it is 500,000 Pa. Below s, good bump followability can be obtained.

再者,第1樹脂層1的黏度,可根據實施例所記載的方法測定。 Further, the viscosity of the first resin layer 1 can be measured by the method described in the examples.

第1樹脂層1的黏度,可根據丙烯酸樹脂的含量、填充物的含量、填充物的粒徑控制。例如:藉由將丙烯酸樹脂增量、填充物增量或者縮小填充物的粒徑,就能提高第1樹脂層1的黏度。 The viscosity of the first resin layer 1 can be controlled according to the content of the acrylic resin, the content of the filler, and the particle diameter of the filler. For example, the viscosity of the first resin layer 1 can be increased by increasing the amount of the acrylic resin, increasing the filler, or reducing the particle size of the filler.

第1樹脂層1的拉伸儲存彈性模數,佳為2MPa以上。若為2MPa以上,就能抑制第1樹脂層1侵入至中空型電子裝置封裝體的中空部分。第1樹脂層1的拉伸儲存彈性模數,佳為10MPa以下。若為10MPa以下,可得到良好的凹凸追從性。 The tensile storage elastic modulus of the first resin layer 1 is preferably 2 MPa or more. When it is 2 MPa or more, the penetration of the first resin layer 1 into the hollow portion of the hollow type electronic device package can be suppressed. The tensile storage elastic modulus of the first resin layer 1 is preferably 10 MPa or less. When it is 10 MPa or less, good unevenness followability can be obtained.

再者,第1樹脂層1的拉伸儲存彈性模數,可根據實施例所記載的方法測定。 Further, the tensile storage elastic modulus of the first resin layer 1 can be measured by the method described in the examples.

第1樹脂層1的拉伸儲存彈性模數,可根據填充物的含量、填充物的粒徑、彈性體成份的組成及其含量、環氧樹脂的分子構造及其含量控制。 The tensile storage elastic modulus of the first resin layer 1 can be controlled according to the content of the filler, the particle diameter of the filler, the composition and content of the elastomer component, the molecular structure of the epoxy resin, and the content thereof.

第2樹脂層2,含有填充物。 The second resin layer 2 contains a filler.

作為填充物並未特別限定,但最適合使用以第1樹脂層1做說明的。 The filler is not particularly limited, but the first resin layer 1 is most preferably used.

配合第2樹脂層2的填充物的平均粒徑,佳為10μm以上,較佳為15μm以上。若為10μm以上,很容易提高填充物充填量。填充物的平均粒徑,佳為40μm以下,較佳為20μm以下。若為40μm以下,可將樹脂薄片11的厚度薄化,得到表面平滑性良好的樹脂薄片11。 The average particle diameter of the filler to be blended in the second resin layer 2 is preferably 10 μm or more, and preferably 15 μm or more. If it is 10 μm or more, it is easy to increase the filling amount of the filler. The average particle diameter of the filler is preferably 40 μm or less, preferably 20 μm or less. When the thickness is 40 μm or less, the thickness of the resin sheet 11 can be reduced, and the resin sheet 11 having good surface smoothness can be obtained.

填充物,藉由矽烷耦合劑進行處理(前處理)為佳。藉此,可提昇與樹脂的濕潤性,還可提高填充物的分散性。 The filler is preferably treated by a decane coupling agent (pretreatment). Thereby, the wettability with the resin can be improved, and the dispersibility of the filler can also be improved.

矽烷耦合劑,是於分子中具有水解性基及有機官能基的化合物。 A decane coupling agent is a compound having a hydrolyzable group and an organic functional group in a molecule.

作為水解性基,例如列舉有:甲氧基、乙氧基等之碳數1~6的烷氧基、乙醯氧基、2-甲氧基乙氧基等。當中,由易於除去因加水分解所產生的酒精等之揮發成份的理由來看,甲氧基為佳。 Examples of the hydrolyzable group include alkoxy groups having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an ethoxy group, a 2-methoxyethoxy group, and the like. Among them, a methoxy group is preferred because it is easy to remove volatile components such as alcohol generated by hydrolysis.

作為有機官能基,列舉有:乙烯基、環氧基、苯乙烯基、甲基丙烯基、丙烯醯基、胺基、脲基、巰基、硫醚基、異氰酸酯基等等。當中,由易於與環氧樹脂、酚醛樹脂反應的理由來看,環氧基為佳。 Examples of the organic functional group include a vinyl group, an epoxy group, a styryl group, a methacryl group, an acryl group, an amine group, a urea group, a mercapto group, a thioether group, an isocyanate group and the like. Among them, an epoxy group is preferred because it is easy to react with an epoxy resin or a phenol resin.

作為矽烷耦合劑,例如列舉有:乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷類之乙烯基含有矽烷耦合劑;2-(3,4-環氧環己基環氧乙烷)乙基三乙氧基矽烷、3-縮水甘油醚氧基丙基甲基二乙氧基矽烷、3-縮水甘油醚丙基三甲氧基矽烷、3-縮水甘油醚氧基丙基甲基二乙氧基矽烷、3-縮水甘油醚氧基丙基三甲氧基矽烷類之環氧基含 有矽烷耦合劑;p-苯乙烯基類之苯乙烯基含有矽烷耦合劑;3-甲基丙烯醯氧基甲基二甲氧基矽烷、3-甲基丙烯醯氧丙基三甲氧基矽烷、3-硫丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧丙基三乙氧基矽烷類之甲基丙烯基含有矽烷耦合劑;3-丙烯酸氧丙基三甲氧基矽烷類之丙烯醯基含有矽烷耦合劑;N-2-(氨基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基矽烷基-N-(1,3-二甲基-亞丁基)丙胺、N-苯基-3-胺基丙基三甲氧基矽烷、N-(乙烯苯甲基)-2-氨基乙基-3-胺基丙基三甲氧基矽烷類之胺基含有矽烷耦合劑、3-脲基丙基三乙氧矽烷類之脲基含有矽烷耦合劑、3-巰基甲基二甲氧基矽烷、3-巰丙基三甲氧基矽烷類之巰基含有矽烷耦合劑、雙(三乙氧基矽烷基)四硫化物類之硫醚基含有矽烷耦合劑、3-異氰酸酯丙基三乙氧基矽烷類之異氰酸酯基含有矽烷耦合劑等等。 Examples of the decane coupling agent include vinyl trimethoxy decane, vinyl triethoxy decane, vinyl containing decane coupling agent, and 2-(3,4-epoxycyclohexyl oxirane) ethyl group. Triethoxy decane, 3-glycidyloxypropylmethyldiethoxy decane, 3-glycidyl ether propyl trimethoxy decane, 3-glycidyloxypropyl methyl diethoxy Epoxy group of decane, 3-glycidoxypropyltrimethoxydecane a decane coupling agent; a styrene group of a p-styrene group containing a decane coupling agent; 3-methacryloxymethyl dimethoxy decane, 3-methyl propylene oxypropyl trimethoxy decane, a methacryl group of 3-thiopropylmethyldimethoxydecane, 3-methylpropenyloxypropyltriethoxydecane containing a decane coupling agent; 3-oxypropyltrimethoxydecane acrylate The acrylonitrile group contains a decane coupling agent; N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane, N-2-(aminoethyl)-3-aminopropyltrimethyl Oxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyltriethoxydecane, 3-triethoxydecyl-N-(1,3-dimethyl-butylene) The amine group of propylamine, N-phenyl-3-aminopropyltrimethoxydecane, N-(vinylbenzyl)-2-aminoethyl-3-aminopropyltrimethoxydecane contains decane coupling Agent, 3-ureidopropyltriethoxyoxane-based ureido group containing decane coupling agent, 3-mercaptomethyldimethoxydecane, 3-mercaptopropyltrimethoxydecane, fluorenyl group containing decane coupling agent, double (triethoxy decyl) tetrasulfide thioether group containing hydrazine Coupling agent, 3-isocyanate propyl triethoxy silane-based group of an isocyanate-containing silane-coupling agent and the like.

作為藉由矽烷耦合劑來處理填充物的方法並未特別限定,列舉有:在溶媒中混合填充物與矽烷耦合劑的濕式法、在氣相中處理填充物與矽烷耦合劑的乾式法等等。 The method for treating the filler by the decane coupling agent is not particularly limited, and examples thereof include a wet method in which a filler and a decane coupling agent are mixed in a solvent, a dry method in which a filler and a decane coupling agent are treated in a gas phase, and the like. Wait.

矽烷耦合劑的處理量並未特別限定,但相對於未處理的填充物100重量部,矽烷耦合劑以0.1~1重量部進行處理為佳。 The treatment amount of the decane coupling agent is not particularly limited, but it is preferably treated with 0.1 to 1 part by weight of the decane coupling agent per 100 parts by weight of the untreated filler.

第2樹脂層2中的填充物的含量,佳為超過 69體積%的值,較佳為71體積%以上。若超過69體積%,就能設計出低線膨脹係數。一方面,填充物的含量,佳為90體積%以下,較佳為85體積%以下,若為90體積%以下,可得到良好的柔軟性。 The content of the filler in the second resin layer 2 is preferably more than The value of 69% by volume is preferably 71% by volume or more. If it exceeds 69% by volume, a low coefficient of linear expansion can be designed. On the other hand, the content of the filler is preferably 90% by volume or less, preferably 85% by volume or less, and if it is 90% by volume or less, good flexibility can be obtained.

填充物的含量亦能以「重量%」為單位做說明。代表上針對二氧化矽的含量,以「重量%」為單位做說明。 The content of the filler can also be described in terms of "% by weight". The content of the cerium oxide is expressed in terms of "% by weight".

二氧化矽通常比重為2.2g/cm3,因此二氧化矽的含量(重量%)的最佳範圍例如:如下所示。 The cerium oxide usually has a specific gravity of 2.2 g/cm 3 , and therefore the optimum range of the content (% by weight) of cerium oxide is as follows, for example.

亦即,第2樹脂層2中的二氧化矽的含量,係超過80重量%的值為佳,82重量%以上較佳。第2樹脂層2中的二氧化矽的含量,係94重量%以下為佳。 In other words, the content of cerium oxide in the second resin layer 2 is preferably more than 80% by weight, and more preferably 82% by weight or more. The content of cerium oxide in the second resin layer 2 is preferably 94% by weight or less.

氧化鈻通常比重為3.9g/cm3,因此氧化鈻的含量(重量%)的最佳範圍例如:如下所示。 The cerium oxide usually has a specific gravity of 3.9 g/cm 3 , and therefore the optimum range of the content (% by weight) of cerium oxide is as follows, for example.

亦即,第2樹脂層2中的氧化鈻的含量,係超過88重量%的值為佳,90重量%以上較佳。第2樹脂層2中的氧化鈻的含量,係97重量%以下為佳。 In other words, the content of cerium oxide in the second resin layer 2 is preferably more than 88% by weight, and more preferably 90% by weight or more. The content of cerium oxide in the second resin layer 2 is preferably 97% by weight or less.

第2樹脂層2,係含有熱硬化性樹脂為佳。作為熱硬化性樹脂,列舉有:環氧樹脂、酚醛樹脂等等。第2樹脂層2,係含有環氧樹脂較佳。作為環氧樹脂,最適合使用以第1樹脂層1做說明的。 The second resin layer 2 is preferably a thermosetting resin. Examples of the thermosetting resin include an epoxy resin, a phenol resin, and the like. The second resin layer 2 preferably contains an epoxy resin. As the epoxy resin, the first resin layer 1 is most preferably used.

第2樹脂層2,係含有酚醛樹脂為佳。作為酚醛樹脂,最適合使用以第1樹脂層1做說明的。 The second resin layer 2 is preferably a phenol resin. As the phenol resin, the first resin layer 1 is most preferably used.

第2樹脂層2中的環氧樹脂及酚醛樹脂的合 計含量,係2重量%以上為佳,8重量%以上較佳。若為2重量%以上,可得到充分的硬化物強度。第2樹脂層2中的環氧樹脂及酚醛樹脂的合計含量,係20重量%以下為佳,15重量%以下為佳。若為20重量%以下,可減少硬化物的線膨脹係數,並且可完成低吸濕化。 Combination of epoxy resin and phenolic resin in the second resin layer 2 The content is preferably 2% by weight or more, and preferably 8% by weight or more. When it is 2% by weight or more, sufficient cured product strength can be obtained. The total content of the epoxy resin and the phenol resin in the second resin layer 2 is preferably 20% by weight or less, more preferably 15% by weight or less. If it is 20% by weight or less, the coefficient of linear expansion of the cured product can be reduced, and low moisture absorption can be achieved.

環氧樹脂與酚醛樹脂的配合比例,由硬化反應性的觀點來看,相對於環氧樹脂中的環氧基1當量,酚醛樹脂中的羥基的合計配合成0.7~1.5當量為佳,較佳為0.9~1.2當量。 The blending ratio of the epoxy resin to the phenol resin is preferably from 0.7 to 1.5 equivalents, more preferably from 0.7 to 1.5 equivalents, based on 1 equivalent of the epoxy group in the epoxy resin. It is 0.9 to 1.2 equivalents.

第2樹脂層2,係含有熱可塑性樹脂為佳。 The second resin layer 2 preferably contains a thermoplastic resin.

作為熱可塑性樹脂,列舉有:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、6-尼龍和6,6-尼龍之類的聚醯胺樹脂、苯氧基樹脂、丙烯酸樹脂、PET和PBT之類的飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異戊二烯-苯乙烯嵌段共聚物、甲基丙烯酸甲酯-丁二烯-乙烯共聚物(MBS樹脂)等等。該些熱可塑性樹脂可單獨使用,或2種以上併用。 Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, saturated polymer such as phenoxy resin, acrylic resin, PET and PBT Ester resin, polyamidoximine resin, fluororesin, styrene-isoprene-styrene block copolymer, methyl methacrylate-butadiene-ethylene copolymer (MBS resin) and the like. These thermoplastic resins may be used singly or in combination of two or more.

第2樹脂層2中的熱可塑性樹脂的含量,係1重量%以上為佳。第2樹脂層2中的熱可塑性樹脂的含量,係7重量%以下為佳,5重量%以下較佳,3.5重量%以下更佳。若為上記範圍內,可得到良好的可撓性。 The content of the thermoplastic resin in the second resin layer 2 is preferably 1% by weight or more. The content of the thermoplastic resin in the second resin layer 2 is preferably 7% by weight or less, more preferably 5% by weight or less, and still more preferably 3.5% by weight or less. If it is within the above range, good flexibility can be obtained.

第2樹脂層2,係含有硬化促進劑為佳。作為 硬化促進劑,最適合使用以第1樹脂層1做說明的。 The second resin layer 2 preferably contains a curing accelerator. As The hardening accelerator is most preferably used as the first resin layer 1.

硬化促進劑的含量,相對於環氧樹脂及酚醛樹脂的合計100重量部,0.1~5重量部為佳。 The content of the curing accelerator is preferably 0.1 to 5 parts by weight based on 100 parts by weight of the total of the epoxy resin and the phenol resin.

第2樹脂層2,除了前述成份以外,可適當含有一般使用在製造密封樹脂的配合劑,例如:難燃劑成份、顏料、矽烷耦合劑等等。 The second resin layer 2 may contain, in addition to the above components, a compounding agent generally used in the production of a sealing resin, for example, a flame retardant component, a pigment, a decane coupling agent, or the like.

作為難燃劑成份,可使用例如:氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合化金屬氫氧化物等等的各種金屬氫氧化物、磷腈化合物等等。當中,由難燃性、硬化後之強度優的理由來看,磷腈化合物為佳。 As the flame retardant component, various metal hydroxides, phosphazene compounds, and the like, such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, composite metal hydroxide, and the like can be used. . Among them, the phosphazene compound is preferred from the viewpoints of excellent flame retardancy and strength after hardening.

作為顏料並未特別限定,列舉有:碳黑等等。 The pigment is not particularly limited, and examples thereof include carbon black and the like.

第2樹脂層2的製造方法並未特別限定,以前述各成份(例如:環氧樹脂、酚醛樹脂、熱可塑性樹脂、填充物及硬化促進劑)混練所得到的混練物塑性加工成薄片狀的方法為佳。藉此,可高量填充填充物,還可設計低線膨脹係數。 The method for producing the second resin layer 2 is not particularly limited, and the kneaded material obtained by kneading each of the above components (for example, an epoxy resin, a phenol resin, a thermoplastic resin, a filler, and a curing accelerator) is plastically processed into a sheet shape. The method is better. Thereby, the filler can be filled with a high amount, and a low coefficient of linear expansion can also be designed.

具體上,係將環氧樹脂、酚醛樹脂、熱可塑性樹脂、填充物及硬化促進劑利用混合輥、加壓式揑合機、擠壓機之類的公知混練機進行溶融混練,藉此調製混練物,將所得到的混練物塑性加工成薄片狀。作為混練條件,溫度的上限,係140℃以下為佳,130℃以下較佳。溫度的下限,係上述之各成份的軟化點以上為佳,例如: 30℃以上,佳為50℃以上。混練的時間,係佳為1~30分鐘。另外,混練,係在減壓條件下(減壓環境氣體下)進行為佳,減壓條件下的壓力,例如:1×10-4~0.1kg/cm2Specifically, the epoxy resin, the phenol resin, the thermoplastic resin, the filler, and the hardening accelerator are melted and kneaded by a known kneading machine such as a mixing roll, a pressure kneader, or an extruder to prepare a kneaded product. The obtained kneaded material is plastically processed into a sheet shape. As the kneading conditions, the upper limit of the temperature is preferably 140 ° C or lower, and preferably 130 ° C or lower. The lower limit of the temperature is preferably at least the softening point of each of the above components, and is, for example, 30 ° C or more, preferably 50 ° C or more. The time of mixing is 1 to 30 minutes. Further, the kneading is preferably carried out under reduced pressure (under a reduced-pressure atmosphere), and the pressure under reduced pressure is, for example, 1 × 10 -4 to 0.1 kg/cm 2 .

溶融混練後的混練物,不必冷卻,直接以高溫狀態進行塑性加工為佳。作為塑性加工方法並未特別限制,列舉有:平板沖壓法、T模擠塑法、螺紋模擠壓法、滾軋壓延法、滾軋混練法、充氣擠壓法、共擠壓法、壓延成形法等等。作為塑性加工溫度,上述之各成份的軟化點以上為佳,若考慮到環氧樹脂的熱硬化性及成形性,例如為40~150℃,佳為50~140℃,更佳為70~120℃。 The kneaded material after the melt kneading is preferably cooled at a high temperature without being cooled. The plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a thread die extrusion method, a rolling calendering method, a rolling kneading method, a pneumatic extrusion method, a co-extrusion method, and a calendering molding. Law and so on. The plastic working temperature is preferably at least the softening point of each of the above components, and in consideration of thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C, preferably 50 to 140 ° C, more preferably 70 to 120 °C.

第2樹脂層2的厚度並未特別限定,但佳為100μm以上,較佳為150μm以上。另外,第2樹脂層2的厚度,佳為2000μm以下,較佳為1000μm以下,更佳為300μm以下。若為上記範圍內,就能抑制中空型電子裝置封裝體的翹曲。 The thickness of the second resin layer 2 is not particularly limited, but is preferably 100 μm or more, and preferably 150 μm or more. Further, the thickness of the second resin layer 2 is preferably 2000 μm or less, preferably 1,000 μm or less, and more preferably 300 μm or less. If it is within the above range, the warpage of the hollow type electronic device package can be suppressed.

第2樹脂層2的黏度係佳為20000Pa.s以下,較佳為5000Pa.s以下。若為20000Pa.s以下,密封後的表面平坦性良好。 The viscosity of the second resin layer 2 is preferably 20,000 Pa. Below s, preferably 5000 Pa. s below. If it is 20000Pa. Below s, the surface flatness after sealing is good.

再者,第2樹脂層2的黏度,可根據實施例所記載的方法測定。 Further, the viscosity of the second resin layer 2 can be measured by the method described in the examples.

第2樹脂層2的拉伸儲存彈性模數係佳為0.02MPa以上。若為0.02MPa以上,就能在中空型電子裝置封裝體之成形時防止樹脂漏流到基板外周。第2樹脂層 2的拉伸儲存彈性模數係佳為0.5MPa以下。若為0.5MPa以下,中空型電子裝置封裝體的平坦性良好。 The tensile storage elastic modulus of the second resin layer 2 is preferably 0.02 MPa or more. When it is 0.02 MPa or more, it is possible to prevent the resin from leaking to the outer periphery of the substrate during the molding of the hollow type electronic device package. Second resin layer The tensile storage elastic modulus of 2 is preferably 0.5 MPa or less. When it is 0.5 MPa or less, the flatness of the hollow type electronic device package is good.

再者,第2樹脂層2的拉伸儲存彈性模數,係可根據實施例所記載的方法測定。 Further, the tensile storage elastic modulus of the second resin layer 2 can be measured by the method described in the examples.

樹脂薄片11的製造方法並未特別限定,例如列舉有:貼合第1樹脂層1與第2樹脂層2的方法、將用以形成第1樹脂層1的塗佈液塗佈在第2樹脂層2上之後使塗佈液乾燥之方法等等。 The method for producing the resin sheet 11 is not particularly limited, and examples thereof include a method of bonding the first resin layer 1 and the second resin layer 2, and coating a coating liquid for forming the first resin layer 1 on the second resin. The method of drying the coating liquid after the layer 2 and the like.

再者,雖在第1圖中,表示第1樹脂層1為單層的情形,但第1樹脂層1並未限定於此,也可為複數層。另外,雖在第1圖中,表示第2樹脂層2為單層的情形下,但第2樹脂層2並未限定於此,可為複數層。 In the first embodiment, the first resin layer 1 is a single layer. However, the first resin layer 1 is not limited thereto, and may be a plurality of layers. In addition, in the case where the second resin layer 2 is a single layer in the first drawing, the second resin layer 2 is not limited thereto, and may be a plurality of layers.

樹脂薄片11,係使用於具有SAW(Surface Acoustic Wave)濾波器、壓力感測器、振動感測器之類的MEMS(Micro Electro Mechanical Systems)等等的中空構造的中空型電子裝置的密封。再者,中空構造,是所謂將電子裝置搭載在基板之際,形成在電子裝置和基板之間的中空部。當中,樹脂薄片11,最適合使用在SAW濾波器的密封。 The resin sheet 11 is used for sealing a hollow type hollow electronic device having a SAW (Surface Acoustic Wave) filter, a pressure sensor, a MEMS (Micro Electro Mechanical Systems) such as a vibration sensor, or the like. In addition, the hollow structure is a hollow portion formed between the electronic device and the substrate when the electronic device is mounted on the substrate. Among them, the resin sheet 11 is most suitably used for sealing in a SAW filter.

密封方法並未特別限定,例如:將搭載在基板的電子裝置利用樹脂薄片11覆蓋,藉此就能密封電子裝置。作為基板並未特別限定,例如列舉有:印刷配線基板、陶瓷基板、矽基板、金屬基板、半導體晶圓等等。 The sealing method is not particularly limited. For example, the electronic device mounted on the substrate is covered with the resin sheet 11, whereby the electronic device can be sealed. The substrate is not particularly limited, and examples thereof include a printed wiring substrate, a ceramic substrate, a tantalum substrate, a metal substrate, a semiconductor wafer, and the like.

〔中空型電子裝置封裝體之製造方法〕 [Method of Manufacturing Hollow Electronic Device Package]

作為中空型電子裝置封裝體之製造方法,是以利用實施形態1的樹脂薄片11,將搭載在印刷配線基板12上的SAW濾波器13進行中空密封,來製造SAW濾波器封裝體15、16的例子做說明。 In the manufacturing method of the hollow type electronic device package, the SAW filter packages 13 and 16 are manufactured by hollow sealing the SAW filter 13 mounted on the printed wiring board 12 by the resin sheet 11 of the first embodiment. Examples are explained.

(SAW濾波器搭載基板準備工程) (SAW filter mounting substrate preparation project)

在SAW濾波器搭載基板準備工程中,準備搭載著複數個SAW濾波器13的印刷配線基板12(參照第2圖)。SAW濾波器13,係將形成既定之梳形電極的壓電結晶利用公知方法進行切割而單片化,藉此就可形成。在對SAW濾波器13之印刷配線基板12的搭載,可使用倒裝晶片接合器和晶粒接合器之類的公知裝置。SAW濾波器13和印刷配線基板12,是經由凸塊類的突起電極13a而電性連接。另外,SAW濾波器13和印刷配線基板12之間,是將中空部分14維持成不會在SAW濾波器表面阻礙表面彈性波的傳播。SAW濾波器13和印刷配線基板12之間的距離可適當設定,一般為15~50μm左右。 In the SAW filter mounting substrate preparation project, a printed wiring board 12 on which a plurality of SAW filters 13 are mounted is prepared (see FIG. 2). The SAW filter 13 is formed by cutting a piezoelectric crystal forming a predetermined comb-shaped electrode by dicing by a known method. A known device such as a flip chip bonder and a die bonder can be used for mounting the printed wiring board 12 of the SAW filter 13. The SAW filter 13 and the printed wiring board 12 are electrically connected via the bump-like bump electrodes 13a. Further, between the SAW filter 13 and the printed wiring board 12, the hollow portion 14 is maintained so as not to hinder the propagation of the surface elastic wave on the surface of the SAW filter. The distance between the SAW filter 13 and the printed wiring board 12 can be appropriately set, and is generally about 15 to 50 μm.

(密封工程) (sealing engineering)

在密封工程中,在印刷配線基板12上將樹脂薄片11層積成第1樹脂層1與印刷配線基板12及SAW濾波器13接觸,且將SAW濾波器13利用樹脂薄片11進行密封(參照第3圖)。藉此,就可得到SAW濾波器13被樹脂 密封的SAW濾波器封裝體15。 In the sealing process, the resin sheet 11 is laminated on the printed wiring board 12 so that the first resin layer 1 comes into contact with the printed wiring board 12 and the SAW filter 13, and the SAW filter 13 is sealed by the resin sheet 11 (refer to 3)). Thereby, the SAW filter 13 can be obtained by the resin. Sealed SAW filter package 15.

將樹脂薄片11層積在印刷配線基板12上的方法並未特別限定,可利用加熱衝壓和層合機等公知的方法施行。作為加熱衝壓條件,溫度例如為40~100℃,佳為50~90℃,壓力例如為0.1~10MPa,佳為0.5~8MPa,時間例如為0.3~10分鐘,佳為0.5~5分鐘。另外,若考慮到對樹脂薄片11的SAW濾波器13及印刷配線基板12的密著性及追從性的提升,在減壓條件下(例如0.1~5kPa)進行衝壓為佳。 The method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited, and it can be carried out by a known method such as a hot press or a laminator. The temperature is, for example, 40 to 100 ° C, preferably 50 to 90 ° C, and the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. In addition, in consideration of the improvement in the adhesion and the followability of the SAW filter 13 and the printed wiring board 12 of the resin sheet 11, it is preferable to perform the pressing under reduced pressure conditions (for example, 0.1 to 5 kPa).

(熱硬化工程) (thermal hardening engineering)

配合需要,將SAW濾波器封裝體15的樹脂薄片11進行熱硬化。 The resin sheet 11 of the SAW filter package 15 is thermally cured as needed.

作為熱硬化處理的條件,加熱溫度佳為100℃以上,較佳為120℃以上。另一方面,加熱溫度的上限,佳為200℃以下,較佳為180℃以下。加熱時間,佳為10分鐘以上,較佳為30分鐘以上。另一方面,加熱時間的上限,佳為180分鐘以下,較佳為120分鐘以下。另外,也可配合需要進行加壓,佳為0.1MPa以上,較佳為0.5MPa以上。另一方面,上限係佳為10MPa以下,較佳為5MPa以下。 As a condition of the thermosetting treatment, the heating temperature is preferably 100 ° C or higher, preferably 120 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C or lower, preferably 180 ° C or lower. The heating time is preferably 10 minutes or longer, preferably 30 minutes or longer. On the other hand, the upper limit of the heating time is preferably 180 minutes or shorter, preferably 120 minutes or shorter. Further, it is also possible to carry out pressurization in accordance with the necessity, and it is preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, preferably 5 MPa or less.

(切割工程) (cutting engineering)

配合需要,進行SAW濾波器封裝體15的切割(參照 第4圖)。藉此,就能得到晶片狀的SAW濾波器封裝體16。 Cutting of the SAW filter package 15 is performed as needed (refer to Figure 4). Thereby, the wafer-shaped SAW filter package 16 can be obtained.

(基板實裝工程) (substrate mounting engineering)

配合需要,針對SAW濾波器封裝體15或SAW濾波器封裝體16再度形成配線及凸塊17,將此安裝在基板18(參照第5圖)。 For the purpose of the cooperation, the wiring and the bumps 17 are formed again for the SAW filter package 15 or the SAW filter package 16, and are mounted on the substrate 18 (see FIG. 5).

(變形例) (Modification)

在實施形態1中,針對具備:第1樹脂層1、和配置在第1樹脂層1上的第2樹脂層2的樹脂薄片11做說明。在變形例1中,樹脂薄片,具備:第1樹脂層1、和配置在第1樹脂層1上的第3層、和配置在第3層上的第2樹脂層2。在變形例2中,樹脂薄片,具備:第1樹脂層1、和配置在第1樹脂層1上的第2樹脂層2、和配置在第2樹脂層2上的第3層。作為第3層,例如:含有樹脂的層、金屬層等最適合。第3層可為單層,或複數層。 In the first embodiment, the resin sheet 11 including the first resin layer 1 and the second resin layer 2 disposed on the first resin layer 1 will be described. In the first modification, the resin sheet includes the first resin layer 1, the third layer disposed on the first resin layer 1, and the second resin layer 2 disposed on the third layer. In the second modification, the resin sheet includes the first resin layer 1 , the second resin layer 2 disposed on the first resin layer 1 , and the third layer disposed on the second resin layer 2 . As the third layer, for example, a resin-containing layer, a metal layer, or the like is most suitable. The third layer can be a single layer or a plurality of layers.

〔實施例〕 [Examples]

於以下,以本發明之最佳實施例為例示做詳細說明。然而,記載於此實施例的材料和配合量等,除了特別限定的記載,否則皆非將本發明之範圍僅限定於該等之意。 In the following, the preferred embodiments of the invention are illustrated by way of illustration. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention to the above, unless otherwise specified.

首先,針對實施例所使用的成份做說明。 First, the components used in the examples will be explained.

針對使用於為了製作第1樹脂層的成份做說明。 Description will be made on the components used for the production of the first resin layer.

環氧樹脂1:三菱化學公司製之YL-980(雙酚A型液狀環氧樹脂、環氧等量185g/eq.) Epoxy Resin 1: YL-980 manufactured by Mitsubishi Chemical Corporation (bisphenol A type liquid epoxy resin, epoxy equivalent 185g/eq.)

環氧樹脂2:日本化藥公司製之EPPN-501HY(環氧當量169g/eq.軟化點60℃) Epoxy Resin 2: EPPN-501HY manufactured by Nippon Kayaku Co., Ltd. (epoxy equivalent: 169 g/eq. softening point 60 ° C)

環氧樹脂3:三菱化學公司製之1001(雙酚A型、環氧等量470g/eq.軟化點64℃) Epoxy Resin 3: 1001 manufactured by Mitsubishi Chemical Corporation (bisphenol A type, epoxy equivalent 470 g/eq. softening point 64 ° C)

酚醛樹脂:群榮化學公司製之GS-180(苯酚酚醛型酚醛樹脂、酚性羥基當量105g/eq.軟化點83℃) Phenolic resin: GS-180 manufactured by Qun Rong Chemical Co., Ltd. (phenolic novolac type phenolic resin, phenolic hydroxyl equivalent: 105 g/eq. softening point: 83 ° C)

丙烯酸樹脂:Nagase ChemteX公司製之Teisan樹脂SG-70L(Mw:90萬) Acrylic resin: Siisan resin SG-70L manufactured by Nagase ChemteX Co., Ltd. (Mw: 900,000)

無機填充劑1:電氣化學工業公司製之FB-5SDC(溶融球狀二氧化矽、平均粒子徑5μm) Inorganic filler 1: FB-5SDC (melted spherical cerium oxide, average particle diameter 5 μm) manufactured by Electrochemical Industry Co., Ltd.

無機填充劑2:Admatechs公可製之SO-25R(溶融球狀二氧化矽、平均粒子徑0.5μm) Inorganic Filler 2: SO-25R (melt spherical cerium oxide, average particle diameter 0.5 μm) made by Admatechs

無機填充劑3:電氣化學工業公司製之FB-7SDC(溶融球狀二氧化矽、平均粒子徑7μm) Inorganic filler 3: FB-7SDC (melted spherical cerium oxide, average particle diameter 7 μm) manufactured by Denki Kagaku Kogyo Co., Ltd.

硬化促進劑:四國化成工業公司製之2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑) Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd.

針對使用於為了製作第2樹脂層的成份做說明。 The description will be made on the components used for the production of the second resin layer.

環氧樹脂1:新日鐵化學公司製之YSLV-80XY(雙酚F型環氧樹脂、環氧樹脂當量200g/eq.軟化點80℃) Epoxy Resin 1: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epoxy resin equivalent 200 g/eq. softening point 80 ° C)

環氧樹脂2:日本化藥公司製之EPPN-501HY(環氧 當量169g/eq.軟化點60℃) Epoxy Resin 2: EPPN-501HY (epoxy) manufactured by Nippon Kayaku Co., Ltd. Equivalent 169g/eq. Softening point 60°C)

酚醛樹脂:明和化成公司製之MEH-7851-SS(具有聯苯芳烷基骨架的酚醛樹脂、羥基當量203g/eq.軟化點67℃) Phenolic resin: MEH-7851-SS manufactured by Minghe Chemical Co., Ltd. (phenolic resin having a biphenyl aralkyl skeleton, hydroxyl equivalent 203 g/eq. softening point 67 ° C)

熱可塑性樹脂:Kaneka公司製之SIBSTER 072T(苯乙烯-異戊二烯-苯乙烯嵌段共聚物) Thermoplastic resin: SIBSTER 072T (styrene-isoprene-styrene block copolymer) manufactured by Kaneka

無機填充劑1:電氣化學工業公司製之FB-9454FC(溶融球狀二氧化矽、平均粒子徑20μm) Inorganic filler 1: FB-9454FC (melt spherical cerium oxide, average particle diameter 20 μm) manufactured by Electric Chemical Industry Co., Ltd.

無機填充劑2:Tokuyama公司製之SE-40(溶融球狀二氧化矽、平均粒子徑38μm) Inorganic filler 2: SE-40 (melted spherical cerium oxide, average particle diameter 38 μm) manufactured by Tokuyama Co., Ltd.

無機填充劑3:電氣化學工業公司製之FB-570(溶融球狀二氧化矽、平均粒子徑16μm) Inorganic filler 3: FB-570 (melt spherical cerium oxide, average particle diameter 16 μm) manufactured by Electrochemical Industry Co., Ltd.

無機填充劑4:電氣化學工業公司製之FB-5SDC(溶融球狀二氧化矽、平均粒子徑5μm) Inorganic filler 4: FB-5SDC manufactured by Electrochemical Industry Co., Ltd. (melted spherical cerium oxide, average particle diameter 5 μm)

矽烷耦合劑:信越化學公司製之KBM-403(3-縮水甘油醚丙基三甲氧基矽烷) 矽Case coupling agent: KBM-403 (3-glycidyl ether propyl trimethoxy decane) manufactured by Shin-Etsu Chemical Co., Ltd.

碳黑:三菱化學公司製之#20 Carbon black: #20 from Mitsubishi Chemical Corporation

難燃劑:伏見製藥所製之FP-100(磷腈化合物) Flame Retardant: FP-100 (phosphazene compound) manufactured by Fushimi Pharmaceutical Co., Ltd.

硬化促進劑:四國化成工業社製之2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑) Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co., Ltd.

〔實施例1~5及比較例1~2〕 [Examples 1 to 5 and Comparative Examples 1 to 2] (第1樹脂層之製作) (Production of the first resin layer)

按照表1所記載的配合比,配合各成份,在此添加各 成份的總量和同量的甲基乙基酮,來調製清漆。將所得到的清漆,利用缺角輪塗佈機,塗佈於厚50μm的聚酯薄膜A(三菱化學聚酯公司製:MRF-50)的剝離處理面上,且使其乾燥。接著,將厚38μm的聚酯薄膜B(三菱化學聚酯公司製:MRF-38)的剝離處理面,張貼在乾燥後的清漆上,製作第1樹脂層。 According to the mixing ratios shown in Table 1, each component is added, and each is added here. The total amount of the ingredients and the same amount of methyl ethyl ketone are used to prepare the varnish. The obtained varnish was applied onto a release-treated surface of a polyester film A (manufactured by Mitsubishi Chemical Polyester Co., Ltd.: MRF-50) having a thickness of 50 μm by a rug wheel coater, and dried. Next, a release-treated surface of a polyester film B (manufactured by Mitsubishi Chemical Co., Ltd.: MRF-38) having a thickness of 38 μm was applied to the dried varnish to prepare a first resin layer.

(第2樹脂層之製作) (Production of the second resin layer)

按照表2所記載的配合比,配合各成份,利用滾軋混練機以60~120℃、10分鐘、減壓條件下(0.01kg/cm2)進行溶融混練,來調製混練物。接著,將所得到的混練物,利用平板沖壓法,形成薄片狀,製作第2樹脂層。 According to the blending ratios shown in Table 2, the kneaded materials were prepared by blending and kneading at 60 to 120 ° C for 10 minutes under reduced pressure (0.01 kg/cm 2 ) in accordance with the blending ratio. Next, the obtained kneaded material was formed into a sheet shape by a flat plate press method to prepare a second resin layer.

(樹脂薄片之製作) (Production of resin sheet)

將第1樹脂層之聚酯薄膜A剝離之後,利用滾式層壓機,將第1樹脂層層積在第2樹脂層上。藉此,製成第1樹脂層層積在第2樹脂層上的樹脂薄片。 After the polyester film A of the first resin layer was peeled off, the first resin layer was laminated on the second resin layer by a roll laminator. Thereby, the resin sheet in which the first resin layer is laminated on the second resin layer is prepared.

〔比較例3〕 [Comparative Example 3] (第1樹脂層之製作) (Production of the first resin layer)

按照表1所記載的配合比,配合各成份,於此添加各成份的總量和同量的甲基乙基酮,來調製清漆。將所得到的清漆,利用缺角輪塗佈機,塗佈於厚50μm的聚酯薄膜A(三菱化學聚酯公司製:MRF-50)的剝離處理面上,且使其乾燥。接著,將厚38μm的聚酯薄膜B(三菱化學聚酯公司製:MRF-38)的剝離處理面,張貼在乾燥後的清漆上,製作第1樹脂層(僅由第1樹脂層製成的樹脂薄片)。 The varnish was prepared by adding the total amount of each component and the same amount of methyl ethyl ketone to each of the components in accordance with the mixing ratios shown in Table 1. The obtained varnish was applied onto a release-treated surface of a polyester film A (manufactured by Mitsubishi Chemical Polyester Co., Ltd.: MRF-50) having a thickness of 50 μm by a rug wheel coater, and dried. Next, a release-treated surface of a polyester film B (manufactured by Mitsubishi Chemical Co., Ltd.: MRF-38) having a thickness of 38 μm was applied to the dried varnish to prepare a first resin layer (only made of the first resin layer). Resin sheet).

〔比較例4〕 [Comparative Example 4] (第2樹脂層之製作) (Production of the second resin layer)

按照表2所記載的配合比,配合各成份,利用滾軋混練機以60~120℃、10分鐘、減壓條件下(0.01kg/cm2)進行溶融混練,來調製混練物。接著,將所得到的混練物,利用平板沖壓法,形成薄片狀,製作第2樹脂層(僅由第2樹脂層製成的樹脂薄片)。 According to the blending ratios shown in Table 2, the kneaded materials were prepared by blending and kneading at 60 to 120 ° C for 10 minutes under reduced pressure (0.01 kg/cm 2 ) in accordance with the blending ratio. Then, the obtained kneaded product was formed into a sheet shape by a flat plate press method to prepare a second resin layer (a resin sheet made only of the second resin layer).

〔評估〕 [assessment]

針對樹脂薄片進行以下評估。將結果標示於表3。 The following evaluation was performed for the resin sheet. The results are shown in Table 3.

(黏度) (viscosity)

由樹脂薄片切取第1樹脂層,製成厚1mm、直徑20mm的圓形試驗片,進行以下的測定。使用Rheometric公司製的黏彈性測定裝置ARES,在測定頻率0.1Hz、應變0.1%、昇溫速度5℃/分的條件,從50℃至150℃進行測定,讀取100℃的複數黏度(η*)。 The first resin layer was cut out from the resin sheet to prepare a circular test piece having a thickness of 1 mm and a diameter of 20 mm, and the following measurement was performed. Using a viscoelasticity measuring apparatus ARES manufactured by Rheometric Co., Ltd., the measurement was carried out at 50 ° C to 150 ° C under the conditions of a measurement frequency of 0.1 Hz, a strain of 0.1%, and a temperature increase rate of 5 ° C / min, and the complex viscosity (η*) at 100 ° C was read. .

另外,利用與第1樹脂層之測定方法相同的方法,來測定第2樹脂層的黏度。 Moreover, the viscosity of the second resin layer was measured by the same method as the measurement method of the first resin layer.

(拉伸儲存彈性模數) (stretch storage elastic modulus)

由樹脂薄片切取第1樹脂層,製作厚400μm、尺寸10mm×35mm的試驗片,進行以下的測定。使用黏彈性測定裝置(TAInstruments公司製的RSA II),在測定頻率1Hz、應變0.05%、夾具間距離22.6mm、昇溫速度5℃/分的條件,從20℃至130℃進行測定,讀取80℃的拉伸儲存彈性模數(G’)。 The first resin layer was cut out from the resin sheet to prepare a test piece having a thickness of 400 μm and a size of 10 mm × 35 mm, and the following measurement was performed. Using a viscoelasticity measuring apparatus (RSA II manufactured by TA Instruments), the measurement was performed at 20 ° C to 130 ° C at a measurement frequency of 1 Hz, a strain of 0.05%, a distance between grippers of 22.6 mm, and a temperature increase rate of 5 ° C/min. The tensile storage elastic modulus (G') of °C.

另外,利用與第1樹脂層之測定方法相同的方法,來測定第2樹脂層的拉伸儲存彈性模數。 Moreover, the tensile storage elastic modulus of the second resin layer was measured by the same method as the measurement method of the first resin layer.

(流入量) (inflow)

將樹脂薄片層積在SAW濾波器(晶片厚度200μm、凸塊高度20μm)配列成矩陣狀的陶瓷基板上,在溫度100℃、壓力300kPa的條件,進行1分鐘真空壓製(到達真空度6.65×102Pa)。大氣開放後,將SAW濾波器封裝體投入到130℃的烤箱經3小時,藉此使樹脂薄片硬化。然後,利用切割裝置,將SAW濾波器封裝體單片化,觀察所得到的晶片狀的SAW濾波器封裝體的斷面。並且,自晶片邊緣起測定樹脂流至中空部分的流入量。 The resin sheet was laminated on a ceramic substrate in which a SAW filter (wafer thickness: 200 μm, bump height: 20 μm) was arranged in a matrix, and vacuum pressing was performed for 1 minute under conditions of a temperature of 100 ° C and a pressure of 300 kPa (to reach a vacuum of 6.65 × 10). 2 Pa). After the atmosphere was opened, the SAW filter package was placed in an oven at 130 ° C for 3 hours to cure the resin sheet. Then, the SAW filter package was diced by a dicing apparatus, and the cross section of the obtained wafer-shaped SAW filter package was observed. Further, the inflow amount of the resin flow to the hollow portion was measured from the edge of the wafer.

再者,在實施例1~5及比較例1~2中,將樹脂薄片在陶瓷基板之上層積成第1樹脂層與SAW濾波器及陶瓷基板接觸。 Further, in Examples 1 to 5 and Comparative Examples 1 and 2, the resin sheet was laminated on the ceramic substrate so that the first resin layer was in contact with the SAW filter and the ceramic substrate.

(與氧化鈻基板的密著性(於常溫中的剪斷接著力)) (Adhesion to yttria substrate (shearing force at normal temperature)) .實施例1~5及比較例1~2的試驗片作成 . Test pieces of Examples 1 to 5 and Comparative Examples 1 and 2 were prepared.

將樹脂薄片衝壓成直徑3mm的圓形。以90℃的平板沖壓將樹脂薄片在氧化鈻基板(厚度0.5mm)壓著成圓形的樹脂薄片的第1樹脂層與氧化鈻基板接觸。然後,將由樹脂薄片及氧化鈻基板製成的層積體在熱風烤箱中,以150℃ 1小時的條件使其硬化,得到試驗片。 The resin sheet was punched into a circle having a diameter of 3 mm. The first resin layer in which the resin sheet was pressed into a circular resin sheet on a ruthenium oxide substrate (thickness: 0.5 mm) was brought into contact with the ruthenium oxide substrate by a flat plate press at 90 °C. Then, the laminate made of the resin sheet and the ruthenium oxide substrate was cured in a hot air oven at 150 ° C for 1 hour to obtain a test piece.

.作成比較例3~4的試驗片 . Test pieces of Comparative Examples 3 to 4

將樹脂薄片衝壓成直徑3mm的圓形。以90℃的平板沖壓將樹脂薄片在氧化鈻基板(厚度0.5mm)壓著成圓形的樹脂薄片與氧化鈻基板接觸。然後,將由樹脂薄片及氧 化鈻基板製成的層積體在熱風烤箱中,以150℃ 1小時的條件使其硬化,得到試驗片。 The resin sheet was punched into a circle having a diameter of 3 mm. The resin sheet was pressed into a circular resin sheet on a ruthenium oxide substrate (thickness: 0.5 mm) by a plate punch at 90 ° C to be in contact with the ruthenium oxide substrate. Then, it will be made of resin sheet and oxygen The laminate made of the ruthenium substrate was hardened in a hot air oven at 150 ° C for 1 hour to obtain a test piece.

.測定 . Determination

第6圖是模式表示測定剪斷接著力之樣態的圖。如第6圖所示,在可能加溫試驗工作台23上裝上試驗片(由樹脂薄片21及氧化鈻基板22製成的層積體),使其吸附。使試驗工具24向被黏著體22上面浮起0.1mm,以移動速度0.2mm/s將樹脂薄片21向著平行於氧化鈻基板22和樹脂薄片21的接著面的方向推押,測定此時的荷重。測定,係以樹脂薄片21為25℃之狀態來進行。測定樹脂薄片21的樹脂痕,來計算面積(mm2)。 Fig. 6 is a view showing a mode in which the shearing force is measured. As shown in Fig. 6, a test piece (a laminate made of the resin sheet 21 and the yttria substrate 22) is attached to the possible heating test stage 23 to be adsorbed. The test tool 24 was floated to the upper surface of the adherend 22 by 0.1 mm, and the resin sheet 21 was pushed in a direction parallel to the back surface of the yttrium oxide substrate 22 and the resin sheet 21 at a moving speed of 0.2 mm/s, and the load at this time was measured. . The measurement was carried out in a state where the resin sheet 21 was 25 °C. The resin trace of the resin sheet 21 was measured to calculate the area (mm 2 ).

.算出 . Calculate

剪斷接著力是根據下記式算出。 The shearing force is calculated according to the following formula.

剪斷荷重(N)/面積(mm2)=剪斷接著力(MPa) Shear load (N) / area (mm 2 ) = shearing force (MPa)

再者,剪斷接著力,係3MPa以上為佳。 Furthermore, it is preferable to cut the adhesion force to be 3 MPa or more.

(硬化後基板翹曲) (curing of the substrate after hardening)

在縱7cm×橫7cm×厚度0.2mm的氧化鈻基板,層積樹脂薄片之後,進行90℃、5kN、60秒鐘加熱加壓。然後,在烤箱中以150℃、1小時的條件使樹脂薄片硬化之後,放冷到室溫為止。使用可變溫度雷射三次元測定器((股)Ttec公司製),來測定硬化物的表面四角隅的高 度,最高的位置為翹曲量。再者,翹曲量,係1mm以下為佳。 After laminating a resin sheet on a yttria substrate having a length of 7 cm × a width of 7 cm × a thickness of 0.2 mm, it was heated and pressurized at 90 ° C, 5 kN, and 60 seconds. Then, the resin sheet was hardened in an oven at 150 ° C for 1 hour, and then allowed to cool to room temperature. The variable temperature laser three-dimensional measuring device (manufactured by Ttec Co., Ltd.) was used to measure the height of the surface of the hardened material. Degree, the highest position is the amount of warpage. Further, the amount of warpage is preferably 1 mm or less.

再者,在實施例1~5及比較例1~2中,將樹脂薄片在氧化鈻基板之上層積成第1樹脂層與氧化鈻基板接觸。 Further, in Examples 1 to 5 and Comparative Examples 1 and 2, the resin sheet was laminated on the ruthenium oxide substrate so that the first resin layer was in contact with the ruthenium oxide substrate.

(凹凸追從性) (concave tracking)

在氧化鈻基板形成深度0.2mm、寬度0.2mm的溝槽之後,將樹脂薄片在15torr的減壓條件下、120℃、0.5MPa、3分鐘的加壓條件,對形成氧化鈻基板之溝槽的面進行沖壓。此時,樹脂到達溝槽之底部全體的標記為◎、樹脂到達溝槽之底部的一部分的標記為○、樹脂完全未到達溝槽之底部的標記為×。 After forming a groove having a depth of 0.2 mm and a width of 0.2 mm on the ruthenium oxide substrate, the resin sheet was subjected to a pressure of 15 torr under a reduced pressure of 120 ° C, 0.5 MPa, and 3 minutes to form a groove of the ruthenium oxide substrate. The surface is stamped. At this time, the mark of the entire resin reaching the bottom of the groove is ◎, the mark of the resin reaching a part of the bottom of the groove is ○, and the mark of the resin which does not reach the bottom of the groove at all is ×.

再者,在實施例1~5及比較例1~2中,將樹脂薄片在氧化鈻基板之上層積成第1樹脂層與氧化鈻基板接觸。 Further, in Examples 1 to 5 and Comparative Examples 1 and 2, the resin sheet was laminated on the ruthenium oxide substrate so that the first resin layer was in contact with the ruthenium oxide substrate.

1‧‧‧第1樹脂層 1‧‧‧1st resin layer

2‧‧‧第2樹脂層 2‧‧‧2nd resin layer

11‧‧‧樹脂薄片 11‧‧‧Resin sheet

Claims (8)

一種中空型電子裝置密封用樹脂薄片,其具備第1樹脂層及第2樹脂層,前述第1樹脂層及前述第2樹脂層包含填充物,滿足下記式(1)及下記式(2)的中空型電子裝置密封用樹脂薄片,前述第1樹脂層中的前述填充物的含量(體積%)<前述第2樹脂層中的前述填充物的含量(體積%) (1) 前述第1樹脂層的黏度>前述第2樹脂層的黏度 (2)。 A resin sheet for sealing a hollow electronic device, comprising a first resin layer and a second resin layer, wherein the first resin layer and the second resin layer contain a filler, and satisfy the following formula (1) and the following formula (2); The resin sheet for sealing a hollow electronic device, the content (% by volume) of the filler in the first resin layer <the content (% by volume) of the filler in the second resin layer (1) The first resin layer Viscosity > viscosity of the second resin layer (2). 如申請專利範圍第1項所記載的中空型電子裝置密封用樹脂薄片,其中,前述第1樹脂層的黏度相對於前述第2樹脂層的黏度之比(前述第1樹脂層的黏度/前述第2樹脂層的黏度),為3~1000。 The resin sheet for sealing a hollow electronic device according to the first aspect of the invention, wherein a ratio of a viscosity of the first resin layer to a viscosity of the second resin layer (a viscosity of the first resin layer/the first 2 The viscosity of the resin layer) is 3 to 1000. 如申請專利範圍第1項所記載的中空型電子裝置密封用樹脂薄片,其中,前述第1樹脂層的拉伸儲存彈性模數相對於前述第2樹脂層的拉伸儲存彈性模數之比(第1樹脂層的拉伸儲存彈性模數/第2樹脂層的拉伸儲存彈性模數),為5~500。 The resin sheet for sealing a hollow electronic device according to the first aspect of the invention, wherein a ratio of a tensile storage elastic modulus of the first resin layer to a tensile storage elastic modulus of the second resin layer is The tensile storage elastic modulus of the first resin layer/the tensile storage elastic modulus of the second resin layer is 5 to 500. 如申請專利範圍第1項所記載的中空型電子裝置密封用樹脂薄片,其中,前述第1樹脂層中的前述填充物的平均粒徑相對於前 述第2樹脂層中的前述填充物的平均粒徑之比(前述第1樹脂層中的前述填充物的平均粒徑/前述第2樹脂層中的前述填充物的平均粒徑),為0.01~0.5。 The resin sheet for sealing a hollow electronic device according to the first aspect of the invention, wherein the average particle diameter of the filler in the first resin layer is relative to the front The ratio of the average particle diameter of the filler in the second resin layer (the average particle diameter of the filler in the first resin layer / the average particle diameter of the filler in the second resin layer) is 0.01 ~0.5. 如申請專利範圍第1項所記載的中空型電子裝置密封用樹脂薄片,其中,前述第1樹脂層中的前述填充物的含量為69體積%以下,前述第2樹脂層中的前述填充物的含量超過69體積%。 The resin sheet for sealing a hollow electronic device according to the first aspect of the invention, wherein the content of the filler in the first resin layer is 69% by volume or less, and the filler in the second resin layer The content exceeds 69% by volume. 如申請專利範圍第1項所記載的中空型電子裝置密封用樹脂薄片,其中,前述第1樹脂層的厚度相對於前述第2樹脂層的厚度之比(前述第1樹脂層的厚度/前述第2樹脂層的厚度),為0.05~0.3。 The resin sheet for sealing a hollow electronic device according to the first aspect of the invention, wherein a ratio of a thickness of the first resin layer to a thickness of the second resin layer (a thickness of the first resin layer / the first 2 The thickness of the resin layer) is 0.05 to 0.3. 如申請專利範圍第1項~第6項中之任一項所記載的中空型電子裝置密封用樹脂薄片,其中,前述第1樹脂層的黏度為10000Pa.s以上。 The resin sheet for sealing a hollow electronic device according to any one of claims 1 to 6, wherein the viscosity of the first resin layer is 10,000 Pa. s above. 一種中空型電子裝置封裝體之製造方法,其包含:準備申請專利範圍第1項~第7項中之任一項所記載的中空型電子裝置密封用樹脂薄片的工程;和準備用來搭載中空型電子裝置之基板的工程;和以前述第1樹脂層與前述中空型電子裝置及前述基板進行接觸的方式,將前述中空型電子裝置密封用樹脂薄片層積在前述基板之上的工程。 A method of manufacturing a hollow type electronic device package, comprising: preparing a hollow resin device sealing resin sheet according to any one of claims 1 to 7; In the process of the substrate of the electronic device, the resin sheet for sealing the hollow electronic device is laminated on the substrate so that the first resin layer is in contact with the hollow electronic device and the substrate.
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