SG11202002477YA - Manufacturing method of mounting structure, and laminate sheet therefor - Google Patents
Manufacturing method of mounting structure, and laminate sheet thereforInfo
- Publication number
- SG11202002477YA SG11202002477YA SG11202002477YA SG11202002477YA SG11202002477YA SG 11202002477Y A SG11202002477Y A SG 11202002477YA SG 11202002477Y A SG11202002477Y A SG 11202002477YA SG 11202002477Y A SG11202002477Y A SG 11202002477YA SG 11202002477Y A SG11202002477Y A SG 11202002477YA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- mounting structure
- laminate sheet
- sheet therefor
- therefor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Laminated Bodies (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017191944 | 2017-09-29 | ||
PCT/JP2018/036282 WO2019065976A1 (en) | 2017-09-29 | 2018-09-28 | Method for producing mounting structure, and layered sheet used in same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202002477YA true SG11202002477YA (en) | 2020-04-29 |
Family
ID=65901469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202002477YA SG11202002477YA (en) | 2017-09-29 | 2018-09-28 | Manufacturing method of mounting structure, and laminate sheet therefor |
Country Status (8)
Country | Link |
---|---|
US (1) | US11799442B2 (en) |
EP (1) | EP3690931A4 (en) |
JP (1) | JP7118985B2 (en) |
KR (1) | KR102522785B1 (en) |
CN (1) | CN111108595A (en) |
SG (1) | SG11202002477YA (en) |
TW (1) | TWI754103B (en) |
WO (1) | WO2019065976A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7224296B2 (en) * | 2017-10-31 | 2023-02-17 | ナガセケムテックス株式会社 | Mounting structure manufacturing method and sheet used therefor |
CN113992174A (en) * | 2021-11-03 | 2022-01-28 | 北京超材信息科技有限公司 | Acoustic device packaging structure |
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JP2001160607A (en) | 1999-12-02 | 2001-06-12 | Polymatech Co Ltd | Anisotropic heat conducting sheet |
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DE10136743B4 (en) * | 2001-07-27 | 2013-02-14 | Epcos Ag | Method for the hermetic encapsulation of a component |
JP4383768B2 (en) * | 2003-04-23 | 2009-12-16 | スリーエム イノベイティブ プロパティズ カンパニー | Film adhesive for sealing, film laminate for sealing, and sealing method |
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GB0700917D0 (en) * | 2007-01-17 | 2007-02-28 | Queen Mary & Westfield College | Structures with improved properties |
US7687895B2 (en) * | 2007-04-30 | 2010-03-30 | Infineon Technologies Ag | Workpiece with semiconductor chips and molding, semiconductor device and method for producing a workpiece with semiconductors chips |
DE102007020656B4 (en) * | 2007-04-30 | 2009-05-07 | Infineon Technologies Ag | Semiconductor chip workpiece, semiconductor device, and method of manufacturing a semiconductor chip workpiece |
JP2010034254A (en) | 2008-07-29 | 2010-02-12 | Mitsubishi Chemicals Corp | Three-dimensional large-scale integrated circuit (lsi) |
US8093106B2 (en) * | 2009-09-23 | 2012-01-10 | Chipmos Technologies Inc. | Method for manufacturing packaging structure |
JP5421751B2 (en) * | 2009-12-03 | 2014-02-19 | スタンレー電気株式会社 | Semiconductor light emitting device |
JP5349432B2 (en) * | 2010-09-06 | 2013-11-20 | 日東電工株式会社 | Manufacturing method of electronic component device and resin composition sheet for sealing electronic component used therefor |
US9165849B2 (en) * | 2010-10-28 | 2015-10-20 | Kyocera Corporation | Electronic device |
JP6119950B2 (en) * | 2011-12-02 | 2017-04-26 | ナガセケムテックス株式会社 | Hollow structure electronic components |
US9414530B1 (en) * | 2012-12-18 | 2016-08-09 | Amazon Technologies, Inc. | Altering thermal conductivity in devices |
JP5735036B2 (en) * | 2013-05-23 | 2015-06-17 | 日東電工株式会社 | Electronic component device manufacturing method and laminated sheet |
JP6393092B2 (en) * | 2013-08-07 | 2018-09-19 | 日東電工株式会社 | Hollow type electronic device sealing resin sheet and method for producing hollow type electronic device package |
JP6259608B2 (en) | 2013-08-09 | 2018-01-10 | 日東電工株式会社 | Resin sheet for sealing electronic device and method for manufacturing electronic device package |
JP2016001685A (en) * | 2014-06-12 | 2016-01-07 | 日東電工株式会社 | Electronic device equipment manufacturing method |
JP6584752B2 (en) * | 2014-06-12 | 2019-10-02 | 日東電工株式会社 | Resin sheet for sealing |
JP6375756B2 (en) * | 2014-07-28 | 2018-08-22 | 大日本印刷株式会社 | SEALING MATERIAL SHEET FOR SOLAR CELL MODULE AND METHOD FOR PRODUCING THE SAME |
JP6254509B2 (en) * | 2014-11-07 | 2017-12-27 | 信越化学工業株式会社 | Sealing material with electromagnetic shielding support base material, post-sealing semiconductor element mounting substrate, post-sealing semiconductor element forming wafer, and semiconductor device |
WO2016098697A1 (en) * | 2014-12-19 | 2016-06-23 | リンテック株式会社 | Sheet laminate for forming resin film |
WO2016123065A1 (en) * | 2015-01-26 | 2016-08-04 | Cooledge Lighting, Inc. | Systems and methods for adhesive bonding of electronic devices |
JP6520257B2 (en) * | 2015-03-18 | 2019-05-29 | 大日本印刷株式会社 | Sealant sheet for solar cell module, and solar cell module |
JP6282626B2 (en) | 2015-11-04 | 2018-02-21 | 日東電工株式会社 | Hollow type electronic device sealing sheet and method for manufacturing hollow type electronic device package |
JP6603174B2 (en) * | 2016-05-11 | 2019-11-06 | 信越化学工業株式会社 | Semiconductor device and manufacturing method of semiconductor device |
US20180062611A1 (en) * | 2016-08-26 | 2018-03-01 | Wisol Co., Ltd. | Rf module including saw device, method of manufacturing the rf module, the saw device, and method of manufacturing the saw device |
JP6467689B2 (en) * | 2017-03-13 | 2019-02-13 | ナガセケムテックス株式会社 | Hollow structure electronic components |
US10930633B2 (en) * | 2018-06-29 | 2021-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer design for package integration |
-
2018
- 2018-09-28 US US16/650,709 patent/US11799442B2/en active Active
- 2018-09-28 CN CN201880060735.XA patent/CN111108595A/en active Pending
- 2018-09-28 WO PCT/JP2018/036282 patent/WO2019065976A1/en unknown
- 2018-09-28 SG SG11202002477YA patent/SG11202002477YA/en unknown
- 2018-09-28 TW TW107134552A patent/TWI754103B/en active
- 2018-09-28 KR KR1020207007627A patent/KR102522785B1/en active IP Right Grant
- 2018-09-28 EP EP18861304.6A patent/EP3690931A4/en active Pending
- 2018-09-28 JP JP2019545688A patent/JP7118985B2/en active Active
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US20200287518A1 (en) | 2020-09-10 |
EP3690931A1 (en) | 2020-08-05 |
KR102522785B1 (en) | 2023-04-18 |
JPWO2019065976A1 (en) | 2020-11-26 |
CN111108595A (en) | 2020-05-05 |
EP3690931A4 (en) | 2021-02-17 |
KR20200066611A (en) | 2020-06-10 |
TW201921612A (en) | 2019-06-01 |
JP7118985B2 (en) | 2022-08-16 |
US11799442B2 (en) | 2023-10-24 |
TWI754103B (en) | 2022-02-01 |
WO2019065976A1 (en) | 2019-04-04 |
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