KR20150136471A - Resin sheet for electronic device sealing and production method for electronic device package - Google Patents

Resin sheet for electronic device sealing and production method for electronic device package Download PDF

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KR20150136471A
KR20150136471A KR1020157022301A KR20157022301A KR20150136471A KR 20150136471 A KR20150136471 A KR 20150136471A KR 1020157022301 A KR1020157022301 A KR 1020157022301A KR 20157022301 A KR20157022301 A KR 20157022301A KR 20150136471 A KR20150136471 A KR 20150136471A
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South Korea
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resin
electronic device
resin sheet
curing accelerator
temperature
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KR1020157022301A
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Korean (ko)
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에이지 도요다
유사쿠 시미즈
지에 이이노
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닛토덴코 가부시키가이샤
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Publication of KR20150136471A publication Critical patent/KR20150136471A/en

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    • C—CHEMISTRY; METALLURGY
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • C—CHEMISTRY; METALLURGY
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    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
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    • C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2361/00—Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
    • C08J2361/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2409/00—Characterised by the use of homopolymers or copolymers of conjugated diene hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2461/00—Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
    • C08J2461/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A resin sheet excellent in storage stability at room temperature is provided.
A heat generation starting temperature measured by a differential scanning calorimeter is 120 ° C or higher and an exothermic peak temperature is 150-200 ° C.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a resin sheet for encapsulating an electronic device,

The present invention relates to a resin sheet for encapsulating an electronic device and a method of manufacturing an electronic device package.

Typically, in order to manufacture an electronic device package, one or a plurality of electronic devices fixed on a substrate or the like is sealed with an encapsulating resin, and the encapsulation is diced so as to become a package of an electronic device unit, if necessary.

Such encapsulating resin is usually stored by refrigeration or freezing. This is because, if stored at room temperature, the curing reaction progresses slowly and the quality deteriorates. However, from the viewpoint of improvement in workability and the like, improvement in storage stability at room temperature is required.

Japanese Laid-Open Patent Publication No. 2013-7028 Japanese Laid-Open Patent Publication No. 2006-19714

Patent Document 1 discloses that a resin sheet is formed by kneading an epoxy resin, an inorganic filler, a curing accelerator or the like to prepare a kneaded product, and then subjecting the kneaded product to a plastic working process. However, in the production method of the resin sheet of Patent Document 1, some of the curing accelerator may be activated by the temperature rise of the kneaded product at the time of kneading. Once the curing accelerator is activated, the curing accelerator gradually becomes a reaction starting point and the curing reaction proceeds slowly even at room temperature, so that the preservability of the resin sheet at room temperature deteriorates.

In Patent Document 2, a varnish containing a solvent, an epoxy resin and a curing accelerator is coated on a film, and then the coated film is dried to form a resin sheet. However, in the process for producing a resin sheet (solvent coating) of Patent Document 2, since the curing accelerator is well compatible with the epoxy resin and the like, the curing accelerator becomes apt to react and some of the curing accelerator may be activated.

It is an object of the present invention to solve the above problems and to provide a resin sheet excellent in preservation at room temperature.

The present invention relates to a resin sheet for encapsulating electronic devices having a heat generation starting temperature measured by a differential scanning calorimeter of 120 ° C or higher and an exothermic peak temperature of 150-200 ° C.

The resin sheet for encapsulating an electronic device of the present invention satisfies such characteristics, and the curing reaction does not substantially progress at room temperature under the drought. Therefore, the preservation property at room temperature is excellent.

In the DSC curve measured by the differential scanning calorimeter, it is preferable that the area in the temperature range of the exothermic peak temperature ± 30 ° C is 70% or more with respect to the exothermic peak area as a whole. Since it is more than 70%, the DSC curve forms a sharp exothermic peak in the high temperature range. That is, the curing reaction does not proceed substantially at room temperature, and the storage stability at room temperature is excellent.

It is preferable that the minimum melt viscosity after storage for 4 weeks under the condition of 25 캜 is not more than twice the lowest melt viscosity before storage. 2 times or less, the curing reaction at room temperature is satisfactorily suppressed, and the preservation property at room temperature is excellent.

It is preferable that the content of the filler in the resin sheet for encapsulating an electronic device is 70 to 90% by volume.

The resin sheet for encapsulating an electronic device is preferably obtained by sintering a kneaded material obtained by kneading an epoxy resin, a phenol resin, a thermoplastic resin, a filler and a curing accelerator into a sheet form. According to this, the curing accelerator does not match well with the epoxy resin and the like, and the curing accelerator does not react relatively well, compared with the solvent coating method, so that the preservation property at room temperature can be improved.

It is preferable that the curing accelerator is an imidazole-based curing accelerator. It is preferable that the imidazole-based curing accelerator is a latent curing accelerator.

The present invention is also characterized by a lamination step of laminating the resin sheet for encapsulating an electronic device on the electronic device so as to cover one or a plurality of electronic devices and a step of curing the resin sheet for encapsulating the electronic device, And a method of manufacturing an electronic device package including a forming process.

1 is a cross-sectional view schematically showing a resin sheet according to an embodiment of the present invention.
2A is a diagram schematically showing a process of a method of manufacturing an electronic device package according to an embodiment of the present invention.
2B is a diagram schematically showing a process of a method of manufacturing an electronic device package according to an embodiment of the present invention.
FIG. 2C is a diagram schematically showing a process of a method of manufacturing an electronic device package according to an embodiment of the present invention. FIG.

Hereinafter, the present invention will be described in detail with reference to embodiments, but the present invention is not limited to these embodiments.

[Resin sheet for encapsulating electronic device]

1 is a cross-sectional view schematically showing a resin sheet 11 according to an embodiment of the present invention. The resin sheet 11 is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. The support 11a may be subjected to mold releasing treatment to easily peel the resin sheet 11 therefrom.

The resin sheet (11) has a heat generation starting temperature measured by a differential scanning calorimeter (DSC) of 120 ° C or higher and an exothermic peak temperature of 150-200 ° C.

The curing reaction does not substantially proceed at room temperature because the exothermic initiation temperature is 120 ° C or higher and the exothermic peak temperature is 150-200 ° C. Therefore, the resin sheet 11 is excellent in preservation at room temperature.

The upper limit of the heat generation starting temperature is not particularly limited, but is, for example, 170 占 폚 or less in view of the production cost of the resin sheet and the production efficiency.

The exothermic peak temperature is preferably 160 DEG C or higher, and more preferably 190 DEG C or lower.

The heat generation starting temperature and the exothermic peak temperature can be measured by the method described in the examples.

The exothermic onset temperature and exothermic peak temperature can be controlled depending on the kind of the curing accelerator.

In the DSC curve measured by a differential scanning calorimeter, the area in the temperature range of the exothermic peak temperature ± 30 ° C. is preferably 70% or more, more preferably 80% or more, with respect to the entire exothermic peak area. Above 70%, the DSC curve forms a steep exothermic peak in the high temperature range. That is, the curing reaction does not substantially proceed at room temperature, and the resin sheet 11 is excellent in keeping at room temperature.

The minimum melt viscosity after storage for 4 weeks under the condition of 25 캜 is preferably not more than twice the lowest melt viscosity before storage, and more preferably not more than 1.5 times. If it is 2 times or less, the curing reaction at room temperature is satisfactorily suppressed, and the preservation property at room temperature is excellent.

Further, the lowest melt viscosity can be measured by the method described in Examples.

The lowest melt viscosity before storage is not particularly limited, but is usually 20 to 20,000 Pa · s, preferably 3000 to 10000 Pa · s.

The production method of the resin sheet 11 is not particularly limited, but a method of calcining the kneaded material obtained by kneading an epoxy resin, a phenol resin, a thermoplastic resin, a filler and a curing accelerator into a sheet form is preferable. According to this, the curing accelerator does not match well with the epoxy resin and the like, and the curing accelerator does not react relatively well, compared with the solvent coating method, so that the preservation property at room temperature can be improved.

Specifically, a kneaded product is prepared by melt-kneading an epoxy resin, a phenolic resin, a thermoplastic resin, a filler and a curing accelerator with a known kneading machine such as a mixing roll, a pressurized kneader and an extruder, and the resulting kneaded product is sintered . As the kneading conditions, the upper limit of the temperature is preferably 140 占 폚 or lower, and more preferably 130 占 폚 or lower. 140 deg. C or lower, activation of the curing accelerator in the resin sheet production process can be suppressed, and good room temperature preservability can be obtained. The lower limit of the temperature is preferably at least the softening point of each component described above, and is, for example, at least 30 캜, and preferably at least 50 캜.

The epoxy resin is not particularly limited. Examples of the epoxy resin include triphenylmethane type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, Various epoxy resins such as dicyclopentadiene type epoxy resin, phenol novolak type epoxy resin and phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.

From the viewpoint of securing the toughness after curing of the epoxy resin and the reactivity of the epoxy resin, it is preferable that the epoxy resin is solid at room temperature with an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 캜, , Triphenylmethane type epoxy resin, cresol novolak type epoxy resin and biphenyl type epoxy resin are more preferable.

The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, phenol novolak resin, phenol aralkyl resin, biphenyl aralkyl resin, dicyclopentadiene type phenol resin, cresol novolak resin, resol resin and the like are used. These phenolic resins may be used alone or in combination of two or more.

As the phenol resin, from the viewpoint of reactivity with an epoxy resin, it is preferable to use a resin having a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C. Among them, phenol novolak resin Can be used. From the viewpoint of reliability, those having low hygroscopicity such as phenol aralkyl resin and biphenyl aralkyl resin can also be suitably used.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, Polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, fluororesins, styrene-isobutylene- , Methyl methacrylate-butadiene-styrene copolymer (MBS resin), and the like. These thermoplastic resins may be used alone or in combination of two or more. Among them, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption. MBS resin is preferable because it can be kneaded with mild temperature condition (relatively low temperature condition) with little friction with epoxy resin, phenol resin or the like.

The average particle diameter of the thermoplastic resin is not particularly limited, but it is preferable to use a relatively small material. For example, it is preferably 5 to 500 占 퐉, more preferably 50 to 200 占 퐉. Accordingly, kneading can be performed under mild temperature conditions (relatively low temperature conditions).

The average particle diameter can be determined by, for example, using a sample extracted arbitrarily from a mother population, and measuring using a laser diffraction scattering particle size distribution measuring apparatus.

The filler is not particularly limited, but an inorganic filler is preferable. Examples of the inorganic filler include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride. Of these, silica and alumina are preferable, and silica is more preferable because the coefficient of linear expansion can be satisfactorily reduced. As the silica, fused silica is preferable, and spherical fused silica is more preferable because of excellent fluidity.

The average particle diameter of the filler is preferably 1 占 퐉 or more, and more preferably 5 占 퐉 or more. If it is 1 m or more, the flexibility and flexibility of the resin sheet can be easily obtained. The average particle diameter of the filler is preferably 40 占 퐉 or less, and more preferably 30 占 퐉 or less. If it is 40 탆 or less, the filler tends to have a low charging rate.

The average particle size can be determined by, for example, using a sample extracted arbitrarily from a parent group and measuring it using a laser diffraction scattering type particle size distribution measuring apparatus.

The filler is preferably treated (pretreated) with a silane coupling agent. As a result, the wettability with the resin can be improved and kneading can be carried out under mild temperature conditions (relatively low temperature conditions).

The silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.

Examples of the hydrolyzable group include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group. Of these, a methoxy group is preferable because it is easy to remove volatile components such as alcohol generated by hydrolysis.

Examples of the organic functional group include a vinyl group, an epoxy group, a styryl group, a methacrylic group, an acryl group, an amino group, a ureide group, a mercapto group, a sulfide group and an isocyanate group. Among them, an epoxy group is preferable because it is easy to react with an epoxy resin and a phenol resin.

Examples of the silane coupling agent include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3- Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, epoxy group-containing silane coupling agents such as p- Styryl group-containing silane coupling agents such as styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3- Methacryloxy group-containing silane coupling agents such as methacryloxypropyltriethoxysilane, acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropylmethyl Dimethoxysilane, N-2- (aminoethyl) -3-amino Aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl Aminopropyltrimethoxysilane, N- (vinylbenzyl) -2-aminoethyl-3-aminopropyltrimethoxysilane, etc., amino group-containing silane coupling agents such as 3-ureidopropyltriethoxysilane, Containing silane coupling agent, mercapto group-containing silane coupling agents such as 3-mercaptopropylmethyl dimethoxysilane and 3-mercaptopropyltrimethoxysilane, bis (triethoxysilylpropyl) tetrasulfide, etc. Containing group-containing silane coupling agents such as 3-isocyanatopropyltriethoxysilane; and isocyanate group-containing silane coupling agents such as 3-isocyanatopropyltriethoxysilane.

The method of treating the filler with the silane coupling agent is not particularly limited, and examples thereof include a wet method in which a filler and a silane coupling agent are mixed in a solvent, and a dry method in which a filler and a silane coupling agent are treated in a gas phase.

The throughput of the silane coupling agent is not particularly limited, but it is preferable to treat the silane coupling agent in an amount of 0.1 to 1 part by weight with respect to 100 parts by weight of the untreated filler.

The curing accelerator is not particularly limited as long as it accelerates the curing of the epoxy resin and the phenol resin, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate Boron-based curing accelerators such as triphenylphosphine triphenylborane (trade name: TPP-MK) and triphenylphosphine triphenylborane (trade name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.).

Further, it is also possible to use 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11-Z), 2-heptadecylimidazole (Trade name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade name: 2E4MZ), 2-phenylimidazole , 1-benzyl-2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ) CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenylimidazolium trimellitate (trade name: 2PZCNS- -Diamino-6- [2'-methylimidazolyl- (1 ')] - ethyl-s-triazine (trade name 2MZ-A) (1 ')] - ethyl-s-triazine (C11Z-A), 2,4-diamino-6- [2'-ethyl-4'- methylimidazolyl- )] - ethyl-s-triazine (trade name: 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazolyl- 2-phenyl-4-methyl-5-hydroxymethyl-imidazole (trade name: 2PHZ-PW) (Trade name: 2P4MHZ-PW) and the like (all manufactured by Shikoku Chemical Industry Co., Ltd.).

As the imidazole-based curing accelerator, an inclusion complex consisting of 5-nitroisophthalic acid and an imidazole compound represented by the formula (1), an inclusion complex comprising 5-nitroisophthalic acid and an imidazole compound represented by the formula (2), 5 - Inclusion complexes composed of nitroisophthalic acid and an imidazole compound represented by formula (3) are also exemplified.

[Chemical Formula 1]

Figure pct00001

(2)

Figure pct00002

(3)

Figure pct00003

The inclusion complex means a complex in which a guest compound (an imidazole compound represented by the formulas (1) to (3)) is introduced (introduced) into a host compound (5-nitroisophthalic acid). In the present specification, the host compound means a compound that forms a compound by binding with a guest compound by an intermolecular force, which is a bond other than a covalent bond (other than a chemical bond), and forms a capturing lattice in such a compound. The inclusion lattice is a phenomenon in which the host compound is bonded to each other by a bond other than the covalent bond and the guest compound is surrounded by a bond (intermolecular force) other than the covalent bond in a space (gap) Compound.

These inclusion complexes are imbedded in 5-nitroisophthalic acid, which is a host compound, with imazazole compounds represented by the formulas (1) to (3) as guest compounds by physical force such as intermolecular force instead of chemical bonding. Therefore, these inclusion complexes do not act as curing accelerators at room temperature, but they are activated as curing accelerators by releasing the inclusion at high temperatures.

The inclusion complex can be prepared, for example, as follows. That is, at least one selected from the group consisting of 5-nitroisophthalic acid and an imidazole compound represented by the formulas (1) to (3) is added to a solvent and then subjected to heat treatment or heat reflux treatment with appropriate stirring, Can be produced by precipitating the aimed inclusion complex.

In consideration of the ease of dissolution in a solvent, it is preferable to dissolve 5-nitroisophthalic acid and imidazole compounds represented by formulas (1) to (3) in a solvent separately, and then mix these solutions . As the solvent, for example, water, methanol, ethanol, ethyl acetate, methyl acetate, diethyl ether, dimethyl ether, acetone, methyl ethyl ketone, acetonitrile and the like can be used.

In the production of the inclusion complex, the addition ratio of 5-nitroisophthalic acid and imidazole compounds represented by formulas (1) to (3) is, for example, 1 mole of 5-nitroisophthalic acid (host compound) , It is preferable to set the imidazole compound (guest compound) represented by the formulas (1) to (3) to a ratio of 0.1 to 5.0 mol, more preferably to a ratio of 0.5 to 3.0 mol.

The heating conditions at the time of producing the inclusion complex may be any temperature within a range in which the desired inclusion complex can be obtained. For example, the heating is preferably performed at a temperature in the range of 40 to 120 캜, Is more preferable.

Heating at the time of producing the inclusion complex is preferably carried out while stirring a solution or suspension containing 5-nitroisophthalic acid and an imidazole compound represented by the formulas (1) to (3), more preferably by heating under reflux Do.

After the heat treatment or the heating and reflux treatment, for example, the solution or suspension is allowed to stand overnight at room temperature to precipitate an inclusion complex, followed by filtration and drying, thereby obtaining a desired inclusion complex.

Of the imidazole-based curing accelerators, latent curing accelerators are preferable because they are not activated well at the kneading temperature, and 2-phenyl-4,5-dihydroxymethylimidazole, 5-nitroisophthalic acid and the formula (1 ), An inclusion complex composed of an imidazole compound represented by the formula (3), an inclusion complex comprising an imidazole compound represented by the formula (3), an inclusion complex comprising an imidazole compound represented by the general formula Is more preferable.

It is preferable to knead a flame retardant component, a pigment, a silane coupling agent and the like together with an epoxy resin, a phenol resin, a thermoplastic resin, a filler and a curing accelerator.

Examples of the flame retardant composition include various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide and complex metal hydroxide, and phosphazene compounds. Among them, a phosphazene compound is preferable because of its excellent flame retardancy and strength after curing.

The pigment is not particularly limited, and carbon black and the like can be mentioned.

The kneading time is preferably 1 minute or more, and more preferably 5 minutes or more. The kneading time is preferably 30 minutes or less, and more preferably 15 minutes or less.

The kneading is preferably carried out under reduced pressure (in a reduced pressure atmosphere). The pressure under the reduced pressure condition is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less. The lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 10 -4 kg / cm 2 or higher.

It is preferable that the kneaded product after the melt kneading is subjected to the plastic working while keeping the high temperature state without cooling. The plastic working method is not particularly limited, and examples thereof include a flat press method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a co-extrusion method and a calender molding method. The plastic working temperature is preferably not less than the softening point of each of the above-described components. In consideration of the thermosetting property and the moldability of the epoxy resin, the plastic working temperature is, for example, 40 to 150 캜, preferably 50 to 140 캜, 120 ° C.

The thickness of the resin sheet 11 is not particularly limited, but is preferably 100 占 퐉 or more, and more preferably 150 占 퐉 or more. The thickness of the resin sheet 11 is preferably 2000 占 퐉 or less, and more preferably 1000 占 퐉 or less. If it is within the above range, the electronic device can be preferably sealed.

The resin sheet 11 may have a single-layer structure or a multi-layer structure in which two or more resin sheets are laminated, but a single-layer structure is preferable because there is no fear of delamination between layers and the uniformity of sheet thickness is high.

Next, the composition of the resin sheet 11 will be described.

The total content of the epoxy resin and the phenolic resin in the resin sheet 11 is preferably 2.0 wt% or more, and more preferably 3.0 wt% or more. If it is 2.0% by weight or more, good adhesion to an electronic device, a substrate, and the like can be obtained. The total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 20% by weight or less, more preferably 10% by weight or less. If it is 20% by weight or less, hygroscopicity can be suppressed to a low level.

The blending ratio of the epoxy resin and the phenol resin is preferably such that the total amount of the hydroxyl groups in the phenol resin is from 0.7 to 1.5 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of the curing reactivity, 1.2 equivalents.

The content of the thermoplastic resin in the resin sheet (11) is preferably 1.0 wt% or more, and more preferably 1.5 wt% or more. If it is 1.0% by weight or more, kneading can be performed under mild temperature conditions (relatively low temperature conditions). The content of the thermoplastic resin in the resin sheet 11 is preferably 3.5 wt% or less, and more preferably 3 wt% or less. If it is less than 3.5% by weight, good adhesion to electronic devices, substrates and the like can be obtained.

The content of the filler in the resin sheet (11) is preferably 70 vol% or more, and more preferably 74 vol% or more. When it is 70 vol% or more, the coefficient of linear expansion can be designed to be low. On the other hand, the content of the filler is preferably not more than 90% by volume, more preferably not more than 85% by volume. When the content is 90% by volume or less, flexibility, fluidity and adhesiveness are satisfactorily obtained.

The content of the filler can be explained by "wt%" as a unit. Typically, the content of silica is described in terms of "% by weight".

Since the silica usually has a specific gravity of 2.2 g / cm 3, the preferable range of the content (% by weight) of silica is, for example, as follows.

That is, the content of silica in the resin sheet 11 is preferably 81 wt% or more, more preferably 84 wt% or more. The content of silica in the resin sheet 11 is preferably 94% by weight or less, and more preferably 91% by weight or less.

Since alumina usually has a specific gravity of 3.9 g / cm 3, the preferable range of the content (wt%) of alumina is, for example, as follows.

That is, the content of alumina in the resin sheet 11 is preferably 88% by weight or more, and more preferably 90% by weight or more. The content of alumina in the resin sheet 11 is preferably 97 wt% or less, and more preferably 95 wt% or less.

The content of the curing accelerator is preferably 0.1 parts by weight or more, more preferably 1 part by weight or more, and even more preferably 3 parts by weight or more, based on 100 parts by weight of the total amount of the epoxy resin and the phenol resin. When the amount is 0.1 parts by weight or more, curing is completed within a practical time. The content of the curing accelerator is preferably 15 parts by weight or less, more preferably 10 parts by weight or less, and still more preferably 8 parts by weight or less. When the amount is 15 parts by weight or less, the strength of the cured product is good.

The content of the flame retardant component is preferably 10% by weight or more, and more preferably 15% by weight or more, of 100% by weight of the organic component (all components excluding the filler). If it is 10% by weight or more, flame retardancy is satisfactorily obtained. The content of the flame retardant component is preferably 30% by weight or less, and more preferably 25% by weight or less. If it is 30% by weight or less, the physical properties of the cured product tend to be reduced (specifically, the physical properties such as the glass transition temperature and the high-temperature resin strength are lowered).

The content of the pigment in the resin sheet (11) is preferably 0.1 to 2% by weight.

The resin sheet 11 is made of a material such as a SAW (Surface Acoustic Wave) filter, a MEMS (Micro Electro Mechanical Systems) such as a pressure sensor and a vibration sensor, a semiconductor such as an IC Used to encapsulate devices. In particular, it can be suitably used for encapsulating an electronic device (specifically, a SAW filter, a MEMS) that requires a hollow bag, and can be particularly suitably used for encapsulating a SAW filter.

The sealing method is not particularly limited. For example, a method of laminating an uncured resin sheet 11 on a substrate so as to cover an electronic device on a substrate, and then curing the resin sheet 11 to seal the resin sheet 11 . The substrate is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a silicon substrate, and a metal substrate.

[Manufacturing method of electronic device package]

2A to 2C are diagrams schematically showing a process of a method of manufacturing an electronic device package according to an embodiment of the present invention. In the present embodiment, the SAW filter 13 mounted on the printed wiring board 12 is hollow-sealed with the resin sheet 11 to manufacture an electronic device package.

(SAW filter mounted board preparation process)

In the SAW filter mounting board preparation process, a printed wiring board 12 on which a plurality of SAW filters 13 are mounted is prepared (see FIG. 2A). The SAW filter 13 can be formed by dicing and separating piezoelectric crystals in which predetermined interdigital electrodes are formed by a known method. For mounting the SAW filter 13 on the printed wiring board 12, a known device such as a flip chip bond or a die bonder can be used. The SAW filter 13 and the printed wiring board 12 are electrically connected through protruding electrodes 13a such as bumps. Between the SAW filter 13 and the printed wiring board 12, the hollow portion 14 is held so as not to impede the propagation of surface acoustic waves on the surface of the SAW filter. The distance between the SAW filter 13 and the printed wiring board 12 can be appropriately set, and is generally about 15 to 50 mu m.

(Sealing process)

In the sealing step, the resin sheet 11 is laminated on the printed wiring board 12 so as to cover the SAW filter 13, and the SAW filter 13 is resin-sealed with the resin sheet 11 (see Fig. 2B). The resin sheet 11 functions as a sealing resin for protecting the SAW filter 13 and the components accompanying it from the external environment.

The method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited and can be carried out by a known method such as a hot press or a laminator. The heat press conditions include a temperature of, for example, 40 to 100 占 폚, preferably 50 to 90 占 폚, a pressure of, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, , For example 0.3 to 10 minutes, preferably 0.5 to 5 minutes. It is preferable that the resin sheet 11 be pressed under a reduced pressure condition (for example, 0.1 to 5 times) in consideration of the improvement in adhesion and followability of the resin sheet 11 to the SAW filter 13 and the printed wiring board 12 Do.

(Bag-forming step)

In the plugging step, the resin sheet 11 is heat-cured to form the plugs 15 (see Fig. 2B).

As the condition of the heat curing treatment, the heating temperature is preferably 100 占 폚 or higher, and more preferably 120 占 폚 or higher. On the other hand, the upper limit of the heating temperature is preferably 200 占 폚 or lower, more preferably 180 占 폚 or lower. The heating time is preferably 10 minutes or more, and more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less. It may also be pressurized if necessary, preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.

(Dicing step)

Subsequently, the bag 15 may be diced (see Fig. 2C). Thereby, the electronic device package 18 can be obtained by the unit of the SAW filter 13.

(Substrate mounting step)

If necessary, a substrate mounting process may be performed in which re-wiring and bumps are formed on the electronic device package 18, and the electronic device package 18 is mounted on a separate substrate (not shown). For mounting the electronic device package 18 on the substrate, a known device such as a flip chip bond or a die bonder can be used.

Example

Hereinafter, a preferred embodiment of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this embodiment are not intended to limit the scope of the present invention to them, unless otherwise specified.

The components used in the examples are described below.

Epoxy resin: YSLV-80XY (bisphenol F type epoxy resin, epoxy equivalent: 200 g / eq, softening point: 80 캜) manufactured by Shinnitetsu Chemical Co.,

Phenol resin: MEH-7851-SS (a phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent: 203 g / eq, softening point: 67 ° C) manufactured by Meiwa Chemical Co.,

Thermoplastic resin: Metabrene C-132E (MBS resin, average particle diameter 120 탆) manufactured by Mitsubishi Rayon Co.,

Filler: FB-9454FC (fused spherical silica, average particle diameter 20 mu m) manufactured by Denki Kagaku Kogyo Co.,

Silane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co.,

Silane coupling agent-treated filler: FB-9454FC (fused spherical silica, average primary particle diameter 20 占 퐉) manufactured by Denki Kagaku Kogyo Co., Ltd. was treated with KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., (87.9 parts by weight of FB-9454FC, 0.5 parts by weight of KBM-403)

Carbon black: # 20 manufactured by Mitsubishi Chemical Corporation

Flame retardant: FP-100 (phosphazene compound) manufactured by Fushimi Pharmaceutical Co.,

Curing accelerator 1: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemical Industry Co.,

Curing accelerator 2 (Inclusion complex): Inclusion complex consisting of 5-nitroisophthalic acid and 2-ethyl-4-methylimidazole represented by formula (1)

Curing accelerator 3 (Inclusion complex): Inclusion complex consisting of 5-nitroisophthalic acid and 2-phenyl-4,5-dihydroxymethylimidazole represented by formula (2)

Curing accelerator 4 (inclusion complex): Inclusion complex consisting of 5-nitroisophthalic acid and 2-phenyl-4-methyl-5-hydroxymethylimidazole represented by formula (3)

Curing accelerator 5: TPP (triphenylphosphine) manufactured by Hokko Chemical Industry Co.,

Curing accelerator 6: 2E4MZ (2-ethyl-4-methylimidazole) manufactured by Shikoku Chemical Industry Co.,

Examples and Comparative Examples

Each component was blended according to the compounding ratio shown in Table 1 and melt kneaded by a roll kneader at 60 to 120 DEG C for 10 minutes under reduced pressure (0.01 kg / cm2) to prepare a kneaded product. Subsequently, the obtained kneaded product was formed into a sheet-like shape by a flat plate pressing method to produce a resin sheet having a thickness of 200 mu m.

The following evaluations were carried out using the obtained resin sheet (uncured). The results are shown in Table 1.

[Heat generation start temperature and exothermic peak temperature]

The resin sheet was kneaded in a circular shape having a diameter of 4 mm to prepare a sample. This sample was subjected to a DSC curve by raising the temperature from -50 ° C to 300 ° C at 10 ° C / min using a differential scanning calorimeter (manufactured by TA Instrument, DSCQ2000). From the green DSC curve, the heat generation starting temperature and the exothermic peak temperature . Further, a tangent line was drawn to the heating curve at a temperature at which the secondary differential value of the heating curve became zero, and the temperature at the intersection with the base line was read, and this was regarded as the heat generation starting temperature.

[Ratio of calorific value at exothermic peak temperature ± 30 ° C]

From the green DSC curve, the area (area A) and the exothermic peak area (area B) in the temperature range of exothermic peak temperature ± 30 ° C were obtained. The ratio of the calorific value at the exothermic peak temperature ± 30 ° C was calculated by the following formula.

(%) Of calorific value at an exothermic peak temperature of 占 0 占 폚 = area A / area B 占 100

[Minimum melt viscosity before storage]

The minimum melt viscosity of the resin sheet was measured using a dynamic viscoelasticity measuring apparatus (ARES, manufactured by TA Instruments Inc.) (measurement conditions: gap 1 mm, parallel plate diameter 8 mm, measurement frequency 0.1 Hz, Lt; / RTI > / min).

[Minimum melt viscosity after storage]

The minimum melt viscosity of the resin sheet after being stored at 25 占 폚 for 4 weeks was measured in the same manner as before storage.

Figure pct00004

The resin sheets of Examples 1 to 5, in which the heat generation starting temperature was 120 占 폚 or higher and the exothermic peak temperature was 150 占 폚 to 200 占 폚, showed a small change in minimum melt viscosity before and after storage at room temperature and excellent storability at room temperature. On the other hand, the resin sheets of Comparative Examples 1 and 2 having a heat generation starting temperature of lower than 120 占 폚 had undergone curing reaction during storage at room temperature, and the lowest melt viscosity could not be measured.

Further, by using a silane coupling agent-treated filler in place of the untreated filler, the change in minimum melt viscosity before and after storage could be suppressed (Example 5).

11: Resin sheet
11a: Support
13: SAW filter
14: hollow portion
15:
18: Electronic device package

Claims (8)

Wherein the heat generation starting temperature measured by the differential scanning calorimeter is 120 占 폚 or higher and the exothermic peak temperature is 150-200 占 폚. The method according to claim 1,
Wherein the area in the temperature range of the exothermic peak temperature ± 30 ° C. in the DSC curve measured by the differential scanning calorimeter is 70% or more with respect to the exothermic peak area as a whole. 3. The method according to claim 1 or 2,
Wherein the minimum melt viscosity after storage for 4 weeks under the condition of 25 占 폚 is not more than twice the lowest melt viscosity before storage. 4. The method according to any one of claims 1 to 3,
Wherein the resin sheet for electronic device encapsulation has a filler content of 70 to 90% by volume. 5. The method according to any one of claims 1 to 4,
A resin sheet for encapsulating an electronic device obtained by kneading a kneaded material obtained by kneading an epoxy resin, a phenol resin, a thermoplastic resin, a filler and a curing accelerator into a sheet. 6. The method according to any one of claims 1 to 5,
Wherein the curing accelerator is an imidazole-based curing accelerator. 7. The method according to any one of claims 1 to 6,
Wherein the imidazole-based curing accelerator is a latent curing accelerator. A lamination step of laminating the resin sheet for encapsulating an electronic device according to any one of claims 1 to 7 on the electronic device so as to cover one or a plurality of electronic devices,
And a bag-forming step of forming a bag by curing the resin sheet for encapsulating an electronic device.
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JP2018103584A (en) * 2016-12-28 2018-07-05 日東電工株式会社 Resin sheet
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KR20200098583A (en) * 2017-12-14 2020-08-20 나가세케무텍쿠스가부시키가이샤 Manufacturing method of mounting structure

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