CN105074907B - The manufacturing method of electronic component encapsulation resin sheet and electron device package body - Google Patents

The manufacturing method of electronic component encapsulation resin sheet and electron device package body Download PDF

Info

Publication number
CN105074907B
CN105074907B CN201480019069.7A CN201480019069A CN105074907B CN 105074907 B CN105074907 B CN 105074907B CN 201480019069 A CN201480019069 A CN 201480019069A CN 105074907 B CN105074907 B CN 105074907B
Authority
CN
China
Prior art keywords
resin sheet
electronic component
resin
component encapsulation
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480019069.7A
Other languages
Chinese (zh)
Other versions
CN105074907A (en
Inventor
丰田英志
清水祐作
饭野智绘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN105074907A publication Critical patent/CN105074907A/en
Application granted granted Critical
Publication of CN105074907B publication Critical patent/CN105074907B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2361/00—Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
    • C08J2361/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2409/00—Characterised by the use of homopolymers or copolymers of conjugated diene hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2461/00—Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
    • C08J2461/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

The present invention provides being stored at room temperature property excellent resin sheet.Relate to the use of differential scanning calorimetry (DSC) measurement Exotherm Onset Temperature be 120 DEG C or more, the electronic component encapsulation resin sheet that exothermic peak temperature is 150~200 DEG C.

Description

The manufacturing method of electronic component encapsulation resin sheet and electron device package body
Technical field
The present invention relates to the manufacturing methods of electronic component encapsulation resin sheet and electron device package body.
Background technique
Following steps are typically used in the production of electron device package body: being fixed on substrate etc. with sealing resin sealing On one or more electronic devices, as needed, cutting sealing body becomes the packaging body of Single Electron device.
Such sealing resin usually saves under refrigeration or freezing.This is because when saving at normal temperature, slowly into Row curing reaction, quality reduce.However, from the viewpoints such as operability are improved, it is desirable that the improvement of being stored at room temperature property.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2013-7028 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2006-19714 bulletin
Summary of the invention
Problems to be solved by the invention
It is described in patent document 1, is kneaded epoxy resin, inorganic filler and curing accelerator etc. and is kneaded to prepare Object then carries out plastic processing to mixture, to form resin sheet.However, in the preparation method of the resin sheet of patent document 1, The case where rising in the presence of the temperature due to mixture when being kneaded and activate a part of curing accelerator.Once curing accelerator When activation, which becomes reaction starting point, even if curing reaction is also slowly carried out at normal temperature, therefore resin sheet Being stored at room temperature property reduces.
In addition, being described in patent document 2, will be coated with containing the varnish of solvent, epoxy resin and curing accelerator etc. Onto film, then make coated film dry, to form resin sheet.However, (solvent applies the preparation method of the resin sheet of patent document 2 Cover) in, curing accelerator and epoxy resin etc. merge well, therefore curing accelerator becomes the state for being easy reaction, exists There is a situation where activate for a part of curing accelerator.
It is an object of the invention to solve aforementioned problems, provide being stored at room temperature property excellent resin sheet.
The solution to the problem
The Exotherm Onset Temperature that the present invention relates to the use of differential scanning calorimetry (DSC) measurement is 120 DEG C or more, exothermic peak temperature For 150~200 DEG C of electronic component encapsulation resin sheet.
Electronic component encapsulation resin sheet of the invention due to meeting such characteristic, at normal temperature substantially not into Row curing reaction.Therefore, being stored at room temperature property is excellent.
Preferably, in the DSC curve using the measurement of aforementioned differential scanning calorimetry (DSC), the temperature of exothermic peak temperature ± 30 DEG C Area in range is generally 70% or more relative to heat release peak area.Due to being 70% or more, DSC curve is in high-temperature region Domain forms precipitous exothermic peak.That is, being stored at room temperature property is excellent at normal temperature substantially without curing reaction is carried out.
Preferably, the lowest melt viscosity after saving under conditions of 25 DEG C 4 weeks is that the minimum melting before saving is viscous 2 times or less of degree.Since for 2 times, hereinafter, therefore inhibiting the curing reaction under room temperature well, being stored at room temperature property is excellent.
The content of filler in aforementioned electronic device sealing resin sheet is preferably 70~90 volume %.
Aforementioned electronic device sealing resin sheet will preferably be kneaded epoxy resin, phenolic resin, thermoplastic resin, filler And the obtained mixture plastic processing of curing accelerator obtains for sheet.Solidify compared with solvent coating method as a result, and promotees It is difficult to merge with epoxy resin etc. into agent, curing accelerator is relatively difficult to be reacted, therefore can improve being stored at room temperature property.
Said curing promotor is preferably imidazoles system curing accelerator.Aforementioned imidazoles system curing accelerator is preferably latency Curing accelerator.
The invention further relates to a kind of manufacturing methods of electron device package body comprising process below: lamination process, with Aforementioned electronic device sealing resin sheet is laminated in aforementioned electronic device by the mode for covering one or more electronic devices；With And seal formation process, so that aforementioned electronic device sealing resin sheet is solidified to form seal.
Detailed description of the invention
Fig. 1 is the sectional view for schematically showing the resin sheet of an embodiment of the invention.
Fig. 2A be schematically show the electron device package body of an embodiment of the invention manufacturing method one The figure of a process.
Fig. 2 B be schematically show the electron device package body of an embodiment of the invention manufacturing method one The figure of a process.
Fig. 2 C be schematically show the electron device package body of an embodiment of the invention manufacturing method one The figure of a process.
Specific embodiment
Embodiment described below explains the present invention in detail, and the present invention is not limited in these embodiments.
[electronic component encapsulation resin sheet]
Fig. 1 is the sectional view for schematically showing the resin sheet 11 of an embodiment of the invention.For resin sheet 11, Typically provided with the state that is laminated on the supporters 11a such as polyethylene terephthalate (PET) film.It needs It is bright, in order to be easy to carry out the removing of resin sheet 11, demoulding processing can be implemented to supporter 11a.
For resin sheet 11, the Exotherm Onset Temperature using differential scanning calorimetry (DSC) (DSC) measurement is 120 DEG C or more, puts Peak temperature is 150~200 DEG C.
It is real at normal temperature since Exotherm Onset Temperature is 120 DEG C or more and exothermic peak temperature is 150~200 DEG C Without curing reaction in matter.Therefore, the being stored at room temperature property of resin sheet 11 is excellent.
The upper limit of Exotherm Onset Temperature is not particularly limited, is gone out from manufacturing cost, the viewpoint of manufacture efficiency of resin sheet Hair, for example, 170 DEG C or less.
Exothermic peak temperature is preferably 160 DEG C or more and preferably 190 DEG C or less.
Exotherm Onset Temperature and exothermic peak temperature can be measured with the method recorded in embodiment.
Exotherm Onset Temperature and exothermic peak temperature can use the type of curing accelerator to control.
Face in the DSC curve using differential scanning calorimetry (DSC) measurement, within the temperature range of exothermic peak temperature ± 30 DEG C Product is totally preferably 70% or more, more preferably 80% or more relative to heat release peak area.When being 70% or more, DSC curve exists High-temperature area forms precipitous exothermic peak.That is, at normal temperature substantially without curing reaction, the being stored at room temperature property of resin sheet 11 It is excellent.
Lowest melt viscosity after saving under conditions of 25 DEG C 4 weeks is preferably 2 of the lowest melt viscosity before saving Times or less, more preferably 1.5 times or less.When being 2 times or less, the curing reaction under room temperature, being stored at room temperature property are inhibited well It is excellent.
It should be noted that lowest melt viscosity can be measured with the method recorded in embodiment.
Lowest melt viscosity before preservation is not particularly limited, usually 20~20000Pas, preferably 3000~ 10000Pa·s。
The manufacturing method of resin sheet 11 is not particularly limited, epoxy resin, phenolic resin, thermoplastic resin will be preferably kneaded Rouge, filler and the obtained mixture plastic processing of curing accelerator are the method for sheet.As a result, compared with solvent coating method Curing accelerator is difficult to merge with epoxy resin etc., and curing accelerator is relatively difficult to be reacted, therefore can improve room temperature guarantor Sustainability.
Specifically, the kneading machine well known to mixing mill, adding pressure type kneader, extruder etc. is to epoxy resin, phenolic aldehyde tree Rouge, thermoplastic resin, filler and curing accelerator carry out melting mixing to prepare mixture, and obtained mixture is moulded Property is processed as sheet.As compounding conditions, the upper limit of temperature is preferably 140 DEG C or less, more preferably 130 DEG C or less.Due to for 140 DEG C hereinafter, the activation of the curing accelerator in resin sheet manufacturing process therefore can be inhibited, obtain good be stored at room temperature Property.The lower limit of temperature is preferably the softening point of above-mentioned each ingredient or more, is, for example, 30 DEG C or more, preferably 50 DEG C or more.
It is not particularly limited as epoxy resin.It is, for example, possible to use triphenylmethane type epoxy resin, cresol novolac are clear Paint shaped epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy tree Rouge, modified bisphenol F type epoxy resin, dicyclopentadiene type epoxy resin, phenol novolak type epoxy resin, phenoxy resin Etc. various epoxy resin.These epoxy resin, which can be used alone, can also be applied in combination two or more.
From the viewpoint of the reactivity of toughness and epoxy resin after the solidification for ensuring epoxy resin, preferably epoxy is worked as It is the resin of solid under the room temperature that amount 150~250, softening point or fusing point are 50~130 DEG C, wherein go out from the viewpoint of reliability Hair, more preferable triphenylmethane type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin.
Phenolic resin as long as be cured between meeting and epoxy resin react as long as be not particularly limited.It is, for example, possible to use Phenol resol resins, phenol aralkyl resin, biphenyl aralkyl resin, dicyclopentadiene type phenolic resin, cresol novolac Varnish gum, resol (resol resin) etc..These phenolic resin can be used alone, can also be applied in combination 2 Kind or more.
As phenolic resin, from the viewpoint of the reactivity with epoxy resin, it is preferable to use hydroxyl equivalent be 70~ 250, the resin that softening point is 50~110 DEG C, wherein from the viewpoint of solidification reactivity height, phenol can be properly used Novolac resin.In addition, phenol aralkyl resin, biphenyl aralkyl can be properly used from the viewpoint of reliability The resin of agent of low hygroscopicity as resin.
As thermoplastic resin, natural rubber, butyl rubber, isoprene rubber, neoprene, second can be enumerated Alkene-vinyl acetate co-polymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, poly- carbonic acid The polyamides such as ester resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon, phenoxy resin, acrylic compounds tree The saturated polyester resins such as rouge, PET, PBT, polyamide-imide resin, fluororesin, styreneisobutylene-styrene Object, Methyl Methacrylate-Butadiene-Styrene Copolymer (MBS resin) etc..These thermoplastic resins can independent or group Close using two or more come using.Wherein, from the viewpoint of low stress, low water absorbable, optimization styrene-isobutene-benzene second Alkene block copolymer.In addition, it is small from the friction with epoxy resin, phenolic resin etc., it can be in stable temperature condition (compared with low temperature Condition) under the reasons why being kneaded set out, preferred MBS resin.
The average grain diameter of thermoplastic resin is not particularly limited the small partial size, it is preferable to use comparing, for example, 5~ 500 μm, preferably 50~200 μm.Thus, it is possible to be kneaded under stable temperature condition (compared with the condition of low temperature).
It should be noted that average grain diameter can for example export as follows: using the sample arbitrarily extracted from female group, It is measured using laser diffraction and scattering formula particle size distribution device, to export.
It is not particularly limited as filler, preferably inorganic filler.As inorganic filler, for example, quartz can be enumerated Glass, talcum, silica (fused silica, crystalline silica etc.), aluminium oxide, aluminium nitride, silicon nitride, boron nitride Deng.Wherein, from the reasons why can reducing linear expansion coefficient well, preferably silica, aluminium oxide, more preferable titanium dioxide Silicon.As silica, for the reason preferred molten silica that mobility is excellent, more preferable spheroidal fused silica.
The average grain diameter of filler is preferably 1 μm or more, more preferably 5 μm or more.When being 1 μm or more, it is easy to get resin Flexibility, the flexibility of piece.The average grain diameter of filler is preferably 40 μm or less, more preferably 30 μm or less.When being 40 μm or less, hold Easily make filler high fill-ratio.
It should be noted that average grain diameter can for example export as follows；Using the sample arbitrarily extracted from female group, It is measured using laser diffraction and scattering formula particle size distribution device, to export.
Filler is handled the filler of (pre-treatment) preferably by silane coupling agent.Thus, it is possible to improve and resin Wetability can be kneaded under mild temperature condition (compared with the condition of low temperature).
Silane coupling agent is the compound in the molecule with hydrolization group and organo-functional group.
As hydrolization group, for example, the alkoxy of the carbon numbers such as methoxyl group, ethyoxyl 1~6, acetyl oxygen can be enumerated Base, 2- methoxy ethoxy etc..Wherein, from the reasons why easily removing the volatile ingredients such as the alcohol generated by hydrolysis, preferably Methoxyl group.
As organo-functional group, vinyl, epoxy group, styryl, methylacryloyl, acryloyl can be enumerated Base, amino, urea groups, sulfydryl, thioether group, isocyanate group etc..Wherein, from the reason being easy with epoxy resin, reactive modified phenolic resin By, preferred epoxy group.
As silane coupling agent, for example, vinyltrimethoxysilane, vinyltriethoxysilane etc. can be enumerated Silane coupling agent containing vinyl；2- (3,4- epoxycyclohexyl) ethyl trimethoxy silane, 3- glycidoxypropyl Dimethoxysilane, 3- glycidoxypropyltrime,hoxysilane, 3- glycidoxypropyl diethoxy silane, 3- The silane coupling agent containing epoxy group such as epoxy propoxy propyl triethoxysilane；Benzene is contained to styryltrimethoxysilane etc. The silane coupling agent of vinyl；3- methacryloxypropylmethyl dimethoxysilane, 3- methacryloxypropyl Trimethoxy silane, 3- methacryloxypropyl methyl diethoxysilane, three ethoxy of 3- methacryloxypropyl The silane coupling agent containing methylacryloyl such as base silane；3- acryloyloxypropyltrimethoxysilane etc. is containing acryloyl group Silane coupling agent；N-2- (amino-ethyl) -3- aminopropylmethyldimethoxysilane, N-2- (amino-ethyl) -3- aminopropan Base trimethoxy silane, 3- TSL 8330,3-aminopropyltriethoxysilane, 3- triethoxy-silicane Base-N- (1,3- dimethyl-butane) propyl amine, N- phenyl -3- TSL 8330, N- (vinyl benzyl) - The amino-containing silane coupling agents such as 2- amino-ethyl -3- TSL 8330；3- ureidopropyltriethoxysilane Deng the silane coupling agent containing urea groups；3- mercapto propyl methyl dimethoxy silane, 3-mercaptopropyi trimethoxy silane etc. contain mercapto The silane coupling agent of base；The silane coupling agent of the sulfur-bearings ethers such as bis- (triethoxysilylpropyltetrasulfide) tetrasulfides；3- isocyanide The silane coupling agent etc. containing isocyanate group such as acid esters propyl-triethoxysilicane.
It as the method handled with silane coupling agent filler, is not particularly limited, can enumerate in a solvent The damp process of mixed fillers and silane coupling agent handles filler and the dry method of silane coupling agent etc. in the gas phase.
The treating capacity of silane coupling agent is not particularly limited, relative to the untreated filler of 100 parts by weight, preferred process The silane coupling agent of 0.1~1 parts by weight.
As curing accelerator, do not limited especially as long as to make epoxy resin carry out cured substance with phenolic resin It is fixed, for example, tetraphenylphosphoniphenolate tetraphenyl borate salts (trade name can be enumerated；TPP-K), four ptolylboronic acid salt of tetraphenylphosphoniphenolate (trade name；TPP-MK), triphenylphosphine triphenylborane (trade name；) etc. TPP-S phosphorus-boron system curing accelerator (is that north is emerging Chemical industry Co., Ltd. manufacture).
Furthermore, it is possible to enumerate 2-methylimidazole (trade name；2MZ), 2- undecyl imidazole (trade name；C11-Z),2- Heptadecyl imidazole (trade name；C17Z), DMIZ 1,2 dimethylimidazole (trade name；1.2DMZ), 2-ethyl-4-methylimidazole (quotient The name of an article；2E4MZ), 2- phenylimidazole (trade name；2PZ), 2- phenyl -4-methylimidazole (trade name；2P4MZ), 1- benzyl -2- Methylimidazole (trade name；1B2MZ), 1- benzyl -2- phenylimidazole (trade name；1B2PZ), 1- cyano ethyl -2-methylimidazole (trade name；2MZ-CN), 1- cyano ethyl -2- undecyl imidazole (trade name；C11Z-CN), 1- cyano ethyl -2- phenyl miaow Azoles trimellitic acid salt (trade name；2PZCNS-PW), 2,4- diamino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-equal three Piperazine (trade name；2MZ-A), 2,4- diamino -6- [2 '-undecyl imidazole base-(1 ')]-ethyl-s-triazine (trade name； C11Z-A), 2,4- diamino -6- [2 '-ethyls -4 '-methylimidazolyl-(1 ')]-ethyl-s-triazine (trade name；2E4MZ- A), 2,4- diamino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-s-triazine isocyanuric acid adduct (trade name；2MA- OK), 2- phenyl -4,5- bishydroxymethyl imidazoles (trade name；2PHZ-PW), 2- phenyl -4- methyl -5- hydroxymethylimidazole (quotient The name of an article；Imidazoles system curing accelerator (being Shikoku Chem's manufacture) such as 2P4MHZ-PW).
In addition, the miaow as shown in 5- nitroisophthalic acid and formula (1) can be enumerated as imidazoles system curing accelerator The inclusion that inclusion complex, the imidazolium compounds as shown in 5- nitroisophthalic acid and formula (2) of azole compounds formation are formed The inclusion complex that complex, the imidazolium compounds as shown in 5- nitroisophthalic acid and formula (3) are formed.
Inclusion complex refers to that guest compound (imidazolium compounds shown in formula (1)~(3)) is included (intake) to master The compound generated in body compound (5- nitroisophthalic acid).Also, in the present specification, host compound refer to Guest compound forms the substance of compound by the key in addition to covalent bond (in addition to chemical bond), that is, molecular separating force bonding, Refer to the compound that inclusion lattice is formed in such compound.In addition, inclusion lattice refer to: host compound each other by Key in addition to covalent bond and be bonded, by except covalent in the space (gap) more than 2 molecules of the host compound of bonding The compound of key (molecular separating force) inclusion guest compound other than key.
These inclusion complexs pass through the physics such as molecular separating force in the 5- nitroisophthalic acid as host compound Power and non-bonding inclusion has imidazolium compounds shown in formula (1)~(3) as guest compound.Therefore, these inclusions are matched Closing object will not work at normal temperature as curing accelerator, and inclusion is detached from high temperature, thus as curing accelerator And it activates.
Inclusion complex can for example be made in the following way.I.e., it is possible to by 5- nitroisophthalic acid and After at least one of the group for selecting imidazolium compounds shown in free style (1)~(3) to form is added in solvent, Bian Shiyi is stirred It mixes side and is heated or be heated to reflux processing, the inclusion complex of target is precipitated, to make.
It should be noted that in view of dissolve in a solvent easness when, preferably by 5- nitroisophthalic acid and After imidazolium compounds shown in formula (1)~(3) is respectively dissolved into solvent respectively, these lysates are mixed with each other.As Water, methanol, ethyl alcohol, ethyl acetate, methyl acetate, diethyl ether, dimethyl ether, acetone, methyl ethyl ketone, second can be used for example in solvent Nitrile etc..
In addition, in the manufacture of inclusion complex, as miaow shown in 5- nitroisophthalic acid and formula (1)~(3) The adding proportion of azole compounds, for example, relative to 1 mole of 5- nitroisophthalic acid (host compound), preferably by formula (1)~ (3) imidazolium compounds shown in (guest compound) is set as 0.1~5.0 mole of ratio, is more preferably set as 0.5~3.0 Mole ratio.
Heating condition when as manufacture inclusion complex, as long as the temperature range of the inclusion complex of target can be obtained , for example, it is preferable to heat in the range of 40~120 DEG C, more preferably heated in the range of 50~90 DEG C.
The preferred side stirring of heating when manufacturing inclusion complex is containing shown in 5- nitroisophthalic acid and formula (1)~(3) Imidazolium compounds solution or suspension side carry out, be more preferably heated to reflux.
After being heat-treated or being heated to reflux processing, for example, solution or suspension are placed a Dinner at room temperature, cooperate inclusion Object is precipitated, and then filters, is dry, thus obtaining the inclusion complex of target.
Among imidazoles system curing accelerator, even if from reason also not easily-activated under melting temperature, it is preferably latent Property curing accelerator, more preferable 2- phenyl -4,5- bishydroxymethyl imidazoles, shown in 5- nitroisophthalic acid and formula (1) Imidazolium compounds formed inclusion complex, the imidazolium compounds as shown in 5- nitroisophthalic acid and formula (2) formed The inclusion complex that inclusion complex, the imidazolium compounds as shown in 5- nitroisophthalic acid and formula (3) are formed.
It is preferred that be kneaded together with epoxy resin, phenolic resin, thermoplastic resin, filler and curing accelerator fire retardant at Point, pigment, silane coupling agent etc..
As fire retardant constituent, it is, for example, possible to use aluminium hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, The various metal hydroxides such as stannic hydroxide, Composite metal hydroxides；Phosphazene compound etc..Wherein, from anti-flammability, solidification The reasons why rear excellent strength, sets out, preferably phosphazene compound.
It is not particularly limited as pigment, carbon black etc. can be enumerated.
The time of mixing is preferably 1 minute or more, more preferably 5 minutes or more.In addition, the time being kneaded is preferably 30 points Below clock, it is more preferably 15 minutes or less.
It is kneaded and is carried out (under reduced atmosphere) preferably at reduced pressure conditions.Pressure under reduced pressure is preferably 0.1kg/cm2 Below, it is more preferably 0.05kg/cm2Below.The lower limit of pressure under decompression is not particularly limited, for example, being 1 × 10-4kg/ cm2More than.
Mixture after melting mixing is not preferably cooling and directly carries out plastic processing with the condition of high temperature.As plastic processing Method is not particularly limited, and can enumerate plate pressing, T mouth mold (T-die) extrusion molding, screw rod mouth mold (screw die) Extrusion molding, roll process, roller are kneaded method, inflation extrusion molding, coetrusion, rolling-molding method etc..As plastic processing temperature, preferably It is more than the softening point for above-mentioned each ingredient, when considering the Thermocurable and mouldability of epoxy resin, for example, 40~150 DEG C, preferably 50~140 DEG C, further preferably 70~120 DEG C.
The thickness of resin sheet 11 is not particularly limited, and preferably 100 μm or more, more preferably 150 μm or more.In addition, tree The thickness of rouge piece 11 is preferably 2000 μm or less, more preferably 1000 μm or less.When in above range, it can seal well Electronic device.
Resin sheet 11 for single layer structure or can be laminated with the multilayered structures of 2 or more resin sheets, from being not concerned about Splitting, the reason that the uniformity of piece thickness is high are set out, preferably single layer structure.
Then, the composition of resin sheet 11 is illustrated.
The total content of epoxy resin and phenolic resin in resin sheet 11 is preferably 2.0 weight % or more, is more preferably 3.0 weight % or more.When for 2.0 weight % or more, the bonding force to electronic device, substrate etc. can be obtained well.Resin sheet The total content of epoxy resin and phenolic resin in 11 is preferably 20 weight % or less, more preferably 10 weight % or less.For When 20 weight % or less, hygroscopicity can be inhibited lower.
From the viewpoint of solidification reactivity, the compounding ratio of epoxy resin and phenolic resin is preferably: relative to ring 1 equivalent of epoxy group in oxygen resin, is compounded in such a way that the hydroxyl in phenolic resin adds up to 0.7~1.5 equivalent, is more excellent It is selected as 0.9~1.2 equivalent.
The content of thermoplastic resin in resin sheet 11 be preferably 1.0 weight % or more, more preferably 1.5 weight % with On.When for 1.0 weight % or more, it can be kneaded under mild temperature condition (compared with the condition of low temperature).Heat in resin sheet 11 The content of plastic resin is preferably 3.5 weight % or less, more preferably 3 weight % or less.It, can be good when for 3.5 weight % or less The bonding force to electronic device, substrate etc. is obtained well.
The content of filler in resin sheet 11 is preferably 70 volume % or more, more preferably 74 volume % or more.For 70 bodies When product % or more, linear expansion coefficient can be lower designed.On the other hand, the content of filler is preferably 90 volume % hereinafter, more Preferably 85 volume % or less.When for 90 volume % or less, flexibility, mobility, bonding agent can be obtained well.
For the content of filler, " weight % " can also be illustrated as unit.Typically, for silica Content illustrates using " weight % " as unit.
The usual specific gravity of silica is 2.2g/cm3, therefore the optimum range of the content (weight %) of silica is for example such as It is as described below.
That is, the content of the silica in resin sheet 11 is preferably 81 weight % or more, more preferably 84 weight % or more. The content of silica in resin sheet 11 is preferably 94 weight % or less, more preferably 91 weight % or less.
The usual specific gravity of aluminium oxide is 3.9g/cm3, therefore the optimum range of the content (weight %) of aluminium oxide is for example as following It is described.
That is, the content of the aluminium oxide in resin sheet 11 is preferably 88 weight % or more, more preferably 90 weight % or more.Tree The content of aluminium oxide in rouge piece 11 is preferably 97 weight % or less, more preferably 95 weight % or less.
Relative to 100 parts by weight of total of epoxy resin and phenolic resin, the content of curing accelerator is preferably 0.1 weight It measures part or more, more preferably 1 parts by weight or more, be more preferably 3 parts by weight or more.When to be more than 0.1 parts by weight, practical Time in complete solidification.In addition, the content of curing accelerator be preferably 15 parts by weight or less, more preferably 10 parts by weight with Under, further preferably below 8 parts by weight.When for below 15 parts by weight, the intensity of solidfied material is good.
In organic principle (removing the whole components except filler) 100 weight %, the content of flame retardant constituent is preferably 10 weight % or more, more preferably 15 weight % or more.When for 10 weight % or more, anti-flammability can be obtained well.Fire retardant The content of ingredient is preferably 30 weight % or less, more preferably 25 weight % or less.When for 30 weight % or less, there are solidfied materials Physical property reduce (specifically, reduction of the physical property such as glass transition temperature, high-temperature resin intensity) few tendency.
The content of pigment in resin sheet 11 is preferably 0.1~2 weight %.
Resin sheet 11 is used for SAW (surface acoustic wave；Surface Acoustic Wave) filter；Pressure sensor, vibration MEMS (the microelectromechanical systems such as sensor；Micro Electro Mechanical Systems)；The IC such as LSI (integrated electricity Road), the semiconductors such as transistor；Capacitor；The sealing of the electronic devices such as resistance.Wherein, can be suitably used for must for hollow sealing The sealing for the electronic device (specifically, SAW filter, MEMS) wanted, can be particularly suitablely for the close of SAW filter Envelope.
It is not particularly limited as encapsulating method, for example, can enumerate: the side to cover the electronic device on substrate Uncured resin sheet 11 is laminated on substrate by formula, and resin sheet 11 is then made to solidify the method etc. being sealed.As substrate It is not particularly limited, for example, printed circuit board, ceramic substrate, silicon substrate, metal substrate etc. can be enumerated.
[manufacturing method of electron device package body]
Fig. 2A~2C is the manufacture for respectively schematically showing the electron device package body of an embodiment of the invention The figure of one process of method.In present embodiment, the SAW being mounted on printed circuit board 12 is filtered using resin sheet 11 Device 13 carries out hollow sealing, makes electron device package body.
(preparatory process for carrying the substrate of SAW filter)
In the preparatory process of substrate for carrying SAW filter, prepare the printed circuit equipped with multiple SAW filters 13 Substrate 12 (referring to Fig. 2A).SAW filter 13 can be formed: with well known method to comb poles as defined in being formed with Piezo-electric crystal cut, singualtion, to be formed.In SAW filter 13 into the carrying of printed circuit board 12, it can make The device well known to flip-chip bonder (flip chip bonder), die bonder (die bonder) etc..SAW filter 13 It is electrically connected with printed circuit board 12 by the projected electrodes such as convex block 13a.In addition, SAW filter 13 and printed circuit board Between 12, not hinder surface acoustic wave to maintain hollow space 14 in such a way that SAW filter surface is propagated.SAW filter 13 with Distance between printed circuit board 12 can be suitable for setting, and usually 15~50 μm or so.
(sealing process)
In sealing process, resin sheet 11 is laminated to printed circuit board 12 in a manner of covering SAW filter 13, with tree Rouge piece 11 carries out resin seal to SAW filter 13 (referring to Fig. 2 B).Resin sheet 11 as protect SAW filter 13 and Its subsidiary element from external environment influence sealing resin and work.
The method that resin sheet 11 is laminated on printed circuit board 12 is not particularly limited, can use hot pressing, layer The known methods such as press carry out.As hot pressing condition, temperature is, for example, 40~100 DEG C, preferably 50~90 DEG C, and pressure is for example For 0.1~10MPa, preferably 0.5~8MPa, the time is, for example, 0.3~10 minute, preferably 0.5~5 minute.Further, it is contemplated that When resin sheet 11 is to the raising of the adaptation of SAW filter 13 and printed circuit board 12 and tracing ability, preferably depressurizing Under the conditions of (such as at 0.1~5kPa) suppressed.
(seal formation process)
In seal formation process, heat cure processing is carried out to resin sheet 11, forms seal 15 (referring to Fig. 2 B).
As the condition of heat cure processing, heating temperature is preferably 100 DEG C or more, more preferably 120 DEG C or more.Another party Face, the upper limit of heating temperature are preferably 200 DEG C or less, more preferably 180 DEG C or less.Heating time is preferably 10 minutes or more, More preferably 30 minutes or more.On the other hand, the upper limit of heating time be preferably 180 minutes or less, more preferably 120 minutes with Under.In addition, as needed, can also pressurize, preferably 0.1MPa or more, more preferably 0.5MPa or more.On the other hand, the upper limit Preferably 10MPa or less, more preferably 5MPa or less.
(cutting action)
Then, the cutting of body 15 can also be sealed (referring to Fig. 2 C).Thus, it is possible to obtain single SAW filter 13 Electron device package body 18.
(substrate installation procedure)
It can carry out substrate installation procedure as needed, which is routed the formation of electron device package body 18 and convex again Block attaches it on other substrate (not shown).In installation of the electron device package body 18 to substrate, it can be used down Fill device well known to soldering apparatus, die bonder etc..
Embodiment
The property illustrated below ground suitable embodiment that the present invention will be described in detail.Wherein, about documented in the embodiment Material, compounding amount etc., as long as no particularly limitative record, then the scope of the present invention is not limited to these.
Ingredient used in embodiment is illustrated.
Epoxy resin: YSLV-80XY (bisphenol f type epoxy resin, epoxide equivalent of Nippon Steel Chemical Co., Ltd's manufacture 80 DEG C of 200g/eq. softening point)
Phenolic resin: bright and the manufacture of chemical conversion Co., Ltd. MEH-7851-SS (the phenolic aldehyde tree with biphenyl aralkyl skeleton Rouge, 67 DEG C of hydroxyl equivalent 203g/eq. softening point)
Thermoplastic resin: (MBS resin is averaged the METABLEN C-132E of Mitsubishi Rayon Co., Ltd manufacture 120 μm of partial size)
Filler: the FB-9454FC (melting spherical silicon dioxide, 20 μm of average grain diameter) of Deuki Kagaku Kogyo Co., Ltd's manufacture
Silane coupling agent: the KBM-403 (3- glycidoxypropyltrime,hoxysilane) of SHIN-ETSU HANTOTAI's Chemical Co., Ltd. manufacture
Silane coupling agent handles filler: KBM-403 (the 3- glycidoxypropyl group three manufactured with SHIN-ETSU HANTOTAI's Chemical Co., Ltd. Methoxy silane) to FB-9454FC (the melting spherical silicon dioxide, average primary grain of Deuki Kagaku Kogyo Co., Ltd's manufacture 20 μm of diameter) handled obtained from filler (take KBM-40 as the ratio of 0.5 parts by weight relative to FB-9454FC87.9 parts by weight Example is handled)
Carbon black: the #20 of Mitsubishi chemical Co., Ltd's manufacture
Fire retardant: volt is shown in FP-100 manufactured by pharmacy (phosphazene compound)
Curing accelerator 1: the 2PHZ-PW (2- phenyl -4,5- bishydroxymethyl imidazoles) of Shikoku Chem's manufacture
Curing accelerator 2 (inclusion complex): the 2- ethyl -4- methyl as shown in 5- nitroisophthalic acid and formula (1) The inclusion complex that imidazoles is formed
Curing accelerator 3 (inclusion complex): the 2- phenyl -4,5- two as shown in 5- nitroisophthalic acid and formula (2) The inclusion complex that hydroxymethylimidazole is formed
Curing accelerator 4 (inclusion complex): the 2- phenyl -4- methyl-as shown in 5- nitroisophthalic acid and formula (3) The inclusion complex that 5- hydroxymethylimidazole is formed
The TPP (triphenylphosphine) of curing accelerator 5:HOKKO CHEMICAL INDUSTRY CO., LTD. manufacture
Curing accelerator 6: the 2E4MZ (2-ethyl-4-methylimidazole) of Shikoku Chem's manufacture
Embodiment and comparative example
According to mix ratio recorded in table 1, it is compounded each ingredient, using roller kneading machine in 60~120 DEG C, 10 minutes, decompression Under the conditions of (0.01kg/cm2) under carry out melting mixing, prepare mixture.Then, using plate pressing by obtained mixing Object is formed as sheet, the resin sheet of 200 μm of thickness of production.
Following evaluations are carried out using obtained resin sheet (uncured object).Result is shown in table 1.
[Exotherm Onset Temperature and exothermic peak temperature]
Resin sheet is stamped into the round of diameter 4mm, makes sample.For the sample, differential scanning calorimetry (DSC) is used (TA Instrument manufacture, DSC Q2000), is warming up to 300 DEG C from -50 DEG C with 10 DEG C/min, describes DSC curve, from institute The DSC curve of description reads Exotherm Onset Temperature and exothermic peak temperature.It should be noted that in the second dervative of exotherm Value draws tangent line to exotherm at a temperature of being zero, the temperature with the intersection point of baseline is read, as Exotherm Onset Temperature.
[ratio of the thermal discharge of exothermic peak temperature ± 30 DEG C]
From the DSC curve of description, the area (area A) and exothermic peak within the temperature range of exothermic peak temperature ± 30 DEG C are found out Area is overall (area B).Also, according to following formula, calculate the ratio of the thermal discharge of exothermic peak temperature ± 30 DEG C.
The ratio (%) of the thermal discharge of exothermic peak temperature ± 30 DEG C=area B × 100 area A/
[lowest melt viscosity before preservation]
Using measurement of dynamic viscoelasticity device (manufacture of TA Instruments company, ARES), the minimum of resin sheet is measured Melt viscosity (determination condition: gap 1mm, parallel board diameter 8mm, measurement frequency 0.1Hz, from 50 DEG C to 150 DEG C with 10 DEG C/min Heating measurement).
[lowest melt viscosity after preservation]
For the resin sheet after being saved at 25 DEG C 4 weeks, with save before same method, measure lowest melt viscosity.
[table 1]
The resin sheet for the Examples 1 to 5 that Exotherm Onset Temperature is 120 DEG C or more, exothermic peak temperature is 150~200 DEG C The variation for being stored at room temperature the lowest melt viscosity of front and back is small, and being stored at room temperature property is excellent.On the other hand, Exotherm Onset Temperature is insufficient The resin sheet of 120 DEG C of Comparative Examples 1 and 2 carries out curing reaction in being stored at room temperature, and cannot measure lowest melt viscosity.
In addition, replacing untreated filler by using silane coupling agent processing filler, front and back is saved to inhibit The variation (embodiment 5) of lowest melt viscosity.
Description of symbols
11 resin sheets
11a supporter
13 SAW filters
14 hollow spaces
15 seals
18 electron device package bodies

Claims (7)

1. a kind of electronic component encapsulation resin sheet, wherein the Exotherm Onset Temperature using differential scanning calorimetry (DSC) measurement is 120 DEG C or more, exothermic peak temperature be 150~200 DEG C, using the differential scanning calorimetry (DSC) measurement DSC curve in, exothermic peak Area within the temperature range of temperature ± 30 DEG C is generally 70% or more relative to heat release peak area, contains in the resin sheet useful The filler that silane coupling agent is handled.
2. electronic component encapsulation resin sheet according to claim 1, wherein after being saved 4 weeks under conditions of 25 DEG C Lowest melt viscosity be 2 times or less of lowest melt viscosity before saving.
3. electronic component encapsulation resin sheet according to claim 1, wherein in the electronic component encapsulation resin sheet Filler content be 70~90 volume %.
4. electronic component encapsulation resin sheet according to claim 1 is will to be kneaded epoxy resin, phenolic resin, heat Plastic resin, filler and the obtained mixture plastic processing of curing accelerator are obtained from sheet.
5. electronic component encapsulation resin sheet according to claim 4, wherein the curing accelerator is the solidification of imidazoles system Promotor.
6. electronic component encapsulation resin sheet according to claim 5, wherein imidazoles system curing accelerator is latent Property curing accelerator.
7. a kind of manufacturing method of electron device package body comprising process below:
Lamination process, by electronics device according to any one of claims 1 to 6 in a manner of covering one or more electronic devices Part sealing resin sheet is laminated on the electronic device；And
Seal formation process makes the electronic component encapsulation be solidified to form seal with resin sheet.
CN201480019069.7A 2013-03-28 2014-03-20 The manufacturing method of electronic component encapsulation resin sheet and electron device package body Expired - Fee Related CN105074907B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013069860A JP5735029B2 (en) 2013-03-28 2013-03-28 Resin sheet for sealing electronic device and method for manufacturing electronic device package
JP2013-069860 2013-03-28
PCT/JP2014/057686 WO2014156925A1 (en) 2013-03-28 2014-03-20 Resin sheet for electronic device sealing and production method for electronic device package

Publications (2)

Publication Number Publication Date
CN105074907A CN105074907A (en) 2015-11-18
CN105074907B true CN105074907B (en) 2019-06-18

Family

ID=51623904

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480019069.7A Expired - Fee Related CN105074907B (en) 2013-03-28 2014-03-20 The manufacturing method of electronic component encapsulation resin sheet and electron device package body

Country Status (6)

Country Link
JP (1) JP5735029B2 (en)
KR (1) KR20150136471A (en)
CN (1) CN105074907B (en)
SG (1) SG11201507886UA (en)
TW (2) TW201446950A (en)
WO (1) WO2014156925A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6685080B2 (en) * 2014-11-07 2020-04-22 日東電工株式会社 Sheet for encapsulating electronic device and method for manufacturing electronic device package
JP5976073B2 (en) * 2014-11-07 2016-08-23 日東電工株式会社 Manufacturing method of semiconductor device
CN105778410A (en) * 2014-12-18 2016-07-20 北京首科化微电子有限公司 Epoxy molding compound containing triblock polymer
JP6533399B2 (en) * 2015-03-19 2019-06-19 日東電工株式会社 Method of manufacturing sealing sheet and package
TWI638845B (en) 2015-11-04 2018-10-21 日商琳得科股份有限公司 Kit for heat-curable resin film and second protective film forming film, heat-curable resin film, sheet for forming first protective film, and method of forming first protective film for conductive wafer
TWI761317B (en) * 2015-11-04 2022-04-21 日商琳得科股份有限公司 Heat-curable resin film, sheet for forming first protective film, and method of forming first protective film
JP6933463B2 (en) * 2016-12-28 2021-09-08 日東電工株式会社 Resin sheet
JP6718106B2 (en) * 2017-12-14 2020-07-08 ナガセケムテックス株式会社 Manufacturing method of mounting structure
JP7417008B2 (en) * 2021-03-24 2024-01-17 太陽ホールディングス株式会社 Thermosetting resin compositions, dry films, cured products, printed wiring boards, and electrical and electronic components

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200847354A (en) * 2007-05-17 2008-12-01 Nitto Denko Corp Epoxy resin composition for semiconductor sealing and semiconductor device sealed with the same
CN102786773A (en) * 2011-05-20 2012-11-21 日东电工株式会社 Encapsulating sheet and electronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3317784B2 (en) * 1994-08-10 2002-08-26 住友ベークライト株式会社 Epoxy resin composition for semiconductor encapsulation
JPH10168164A (en) * 1996-12-13 1998-06-23 Nitto Denko Corp Epoxy resin composition and semiconductor device using the same
JP2009275107A (en) * 2008-05-14 2009-11-26 Nitto Denko Corp Semiconductor-sealing epoxy resin composition and semiconductor device using the same
JP2012219134A (en) * 2011-04-06 2012-11-12 Hitachi Chemical Co Ltd Resin composition for electronic component, and liquid sealing material and electronic component device obtained by using the composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200847354A (en) * 2007-05-17 2008-12-01 Nitto Denko Corp Epoxy resin composition for semiconductor sealing and semiconductor device sealed with the same
CN102786773A (en) * 2011-05-20 2012-11-21 日东电工株式会社 Encapsulating sheet and electronic device

Also Published As

Publication number Publication date
WO2014156925A1 (en) 2014-10-02
JP2014189790A (en) 2014-10-06
TW201811973A (en) 2018-04-01
SG11201507886UA (en) 2015-10-29
CN105074907A (en) 2015-11-18
KR20150136471A (en) 2015-12-07
JP5735029B2 (en) 2015-06-17
TW201446950A (en) 2014-12-16

Similar Documents

Publication Publication Date Title
CN105074907B (en) The manufacturing method of electronic component encapsulation resin sheet and electron device package body
CN105555848B (en) The manufacturing method of semiconductor chip thermosetting encapsulation resin sheet and semiconductor package body
US20120296010A1 (en) Encapsulating sheet and electronic device
CN105960426B (en) Resin combination, resin film and semiconductor device and its manufacturing method
CN107636071B (en) Epoxy molding compounds having high adhesion to nickel surfaces, method for the production thereof and use thereof
CN105074906B (en) The manufacturing method of hollow sealing resin sheet and hollow package body
TW201521162A (en) Resin sheet for hollow electronic device encapsulation and method for manufacturing hollow electronic device package
JP6119950B2 (en) Hollow structure electronic components
JP6467689B2 (en) Hollow structure electronic components
CN106674911A (en) High-adhesion epoxy molding compound for packaging semiconductor
JP2016004841A (en) Metal foil-clad board, circuit board and heating element mounting board
CN105103285B (en) The manufacturing method of diaphragm seal, the manufacturing method of diaphragm seal and electronic component package
CN105102512A (en) Resin sheet for electronic device sealing and production method for electronic device package
JP2015065368A (en) Resin sheet, and method for manufacturing electronic device package
JP2014209567A (en) Hollow sealing resin sheet and method for manufacturing hollow package
CN108699423A (en) Composition epoxy resin for encapsulated semiconductor device and the semiconductor devices using its sealing
KR102184233B1 (en) Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same
JP6885068B2 (en) Encapsulating resin composition and semiconductor device
JP2018198337A (en) Hollow sealing resin sheet and production method for hollow package
CN105684143B (en) The manufacturing method of electronic component encapsulation resin sheet and electron device package body
CN105074905B (en) The manufacturing method of electronic component encapsulation resin sheet and electron device package body
CN105164802B (en) The manufacturing method of hollow sealing resin sheet and hollow package body
JP2016094575A (en) Encapsulation sheet with separator, and manufacturing method of semiconductor device
JP2019083342A (en) Sealing sheet with separator, and manufacturing method of semiconductor device
JP2014225635A (en) Hollow sealing sheet and method of producing hollow package

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190618

CF01 Termination of patent right due to non-payment of annual fee