TW201532154A - Adhesive film, wafer-slicing wafer-adhering film, semiconductor device manufacturing method and semiconductor device - Google Patents

Abstract

The subject of the present invention is to provide a high reliable adhesive film for a semiconductor device and the application thereof in which the film can be manufactured at good yield. The present invention is an adhesive film which is used to embed a first semiconductor device fixed to an adhered body and fix a second semiconductor device distinct from the first semiconductor device to the adhered body while the dielectric constant is below 4.00 under 1MHz after thermal hardening. After thermal hardening, the tangent of dielectric loss under 1MHz is below 0.06. Under 120 DEG C and shearing speed 50s -1, a better example of the melting viscosity is between 50pa.S and 3000Pa.S.

Description

Film, dicing die, film manufacturing method, and semiconductor device

The present invention relates to an adhesive film, a crystal cut crystal film, a method of manufacturing a semiconductor device, and a semiconductor device.

Previously, in order to fix a semiconductor wafer to a substrate or an electrode member at the time of manufacturing a semiconductor device, a silver paste was used. This fixing treatment is performed by applying a paste-like adhesive to a semiconductor wafer or a lead frame, mounting the semiconductor wafer on the substrate via a paste-like adhesive, and finally curing the paste-like adhesive layer.

However, the paste-like adhesive may cause a large deviation in coating amount or coating shape, etc., and it becomes difficult to homogenize, or coating requires special equipment or for a long time. Therefore, there has been proposed a dicing die-bonding film which subsequently holds a semiconductor wafer in a dicing step and also provides a bonding film for wafer fixing required for a mounting step (see Patent Document 1).

The diced crystal film has a structure in which a viscous film (subsequent film) is laminated on the dicing film. Further, the dicing film is a structure in which an adhesive layer is laminated on a support substrate. The crystal cut crystal film was used in the following manner. That is, the semiconductor wafer and the bonding film are cut by using the adhesive film, and then the supporting substrate is stretched, and the semiconductor wafer is peeled off together with the adhesive film and collected separately. Further, the semiconductor wafer is then fixed to BT via a bonding film (bismaleimide triazine, bismaleimide-three a substrate, or a lead frame or the like. In the case where a plurality of semiconductor wafers are laminated, the semiconductor wafer to which the film is attached is further attached to the semiconductor wafer fixed via the bonding film.

In addition, it is further demanding that the semiconductor device and its package are highly functional and thin. And miniaturization. As one of the countermeasures, a three-dimensional mounting technique has been developed in which a plurality of layers are stacked in a thickness direction of a semiconductor element to realize high-density integration of semiconductor elements.

As a general three-dimensional mounting method, a semiconductor device is mounted on a substrate such as a substrate, and a semiconductor device is sequentially laminated on the lowermost semiconductor device. Electrical connection is mainly made between the semiconductor elements and between the semiconductor element and the object to be bonded by a bonding wire (hereinafter also referred to as "wire"). Further, a film-like adhesive is widely used for fixing a semiconductor element.

In such a semiconductor device, a semiconductor element for control is disposed on the uppermost semiconductor element for the purpose of controlling the operation of each of the plurality of semiconductor elements or controlling communication between the semiconductor elements (hereinafter also referred to as "controller" )") (refer to Patent Document 2).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-074144

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-096071

The controller is electrically connected to the object to be bonded by wires as well as the semiconductor elements of the lower layer. However, as the number of layers of the semiconductor element increases, the distance between the controller and the object to be bonded becomes longer, and the wire required for electrical connection becomes longer. As a result, there is a case where the communication speed of the semiconductor package is lowered or the quality of the semiconductor package is lowered due to a failure of a wire due to an external factor (heat or impact, etc.), or the bonding step of the wire bonding is complicated, and the semiconductor device is manufactured well. The rate is reduced.

Therefore, the inventors of the present invention have developed an adhesive film for embedding the controller to the adherend, embedding the controller, and fixing other semiconductor elements, and applied for the same (in the case of the present application) Not yet published). By using such an adhesive film as a crystal-cutting paste The adhesive film of the crystal film can improve the manufacturing efficiency of the semiconductor device and the high quality of the semiconductor device.

However, in the above procedure, the semiconductor element on the lowermost layer of the bonding body or the connection structure (for example, bonding wires or surface electrodes, etc.) for electrically connecting the semiconductor element and the substrate to be bonded is all embedded. The film is embedded, so that the semiconductor element or the connection structure of the lowermost layer is corroded by the contact between the two. Further, there is a case where an adhesive film is embedded as a conduction path between the surface electrodes or between the wirings to cause a failure of an electronic signal. As a result of such corrosion or conduction, there is a risk of impairing the reliability of the semiconductor device.

The present invention has been made in view of the above problems, and an object thereof is to provide an adhesive film of a semiconductor device capable of producing high reliability with good yield and use thereof.

The inventors of the present invention have intensively studied the characteristics of the adhesive film in order to solve the above-mentioned previous problems. As a result, it was found that the above object can be attained by adopting the following constitution, and the present invention has been completed.

In other words, the present invention is an adhesive film for embedding a first semiconductor element fixed to a substrate and fixing a second semiconductor element different from the first semiconductor element to an adhesive film of the adherend. (hereinafter also referred to as "embedded film for embedding"), and the dielectric constant at 1 MHz after thermal curing is 4.00 or less.

In the adhesive film, since the dielectric constant at 1 MHz is set to be 4.00 or less after thermal curing, it is possible to suppress ions which may cause corrosion of the first semiconductor element or a connection structure such as a bonding wire or a surface electrode. The movement (polarization) of a charge or charge-like structure such as a polar functional group (hereinafter, collectively referred to as "charge or the like") can suppress corrosion of the connection structure and manufacture a highly reliable semiconductor device. Moreover, since the insulation property after the heat curing is high, it is possible to prevent conduction between the wirings formed on the surface of the substrate or the semiconductor element, and it is possible to manufacture a highly reliable semiconductor device from the viewpoint of electrical characteristics. If the dielectric constant exceeds 4.00, the degree of charge transfer in the film increases. There is a problem that corrosion of the connection structure occurs or conduction between wirings is generated to lower the reliability of the semiconductor device. Furthermore, the method of measuring the dielectric constant is based on the description of the examples.

In the adhesive film, the dielectric loss tangent at 1 MHz after heat curing is preferably 0.06 or less. By setting the dielectric loss tangent and the dielectric constant together in a specific range, the movement of the electric charge or the like as a loss of electric energy in the film is suppressed at a higher level, and as a result, the corrosion of the connection structure is suppressed, and the manufacturing can be made high. A reliable semiconductor device. When the dielectric loss tangent exceeds 0.06, the degree of charge transfer in the film increases as in the case of the dielectric constant, and corrosion of the connection structure occurs to lower the reliability of the semiconductor device. Furthermore, the method of measuring the dielectric loss tangent is based on the description of the examples.

In the adhesive film, the melt viscosity at 120 ° C and a shear rate of 50 s ^-1 is preferably 50 Pa. s above and 3000Pa. s below. When the second semiconductor element is fixed to the adherend by the adhesive film, the adhesion of the adhesive film to the surface structure of the adherend including the first semiconductor element can be improved, thereby improving the embedding. The adhesion between the adhesive film and the adherend is used. As a result, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured. Moreover, when the second semiconductor element is fixed to the object to be bonded by the adhesive film by using the lower limit, the protrusion of the adhesive film in a plan view from the region of the second semiconductor element can be reduced.

The storage elastic modulus of the adhesive film before thermosetting at 25 ° C is preferably 10 MPa or more and 10000 MPa or less. In the form of a dicing die-bonded film in which the film is bonded to the dicing tape, the semiconductor wafer bonded to the bonding film is diced into a semiconductor wafer by dicing, and the film is then singulated. By setting the storage elastic modulus of the adhesive film to the above lower limit or more, it is possible to prevent the adjacent adhesive films from being re-attached. Moreover, by setting it as the said upper limit or less, it can exhibit the favorable adhesiveness with a semiconductor wafer.

The adhesive film contains an inorganic filler, and the content of the inorganic filler is preferably from 10 to 80% by weight. By including a specific amount of the inorganic filler in the adhesive film, charge movement prevention, embedding ease, stretch prevention, and work easiness can be exhibited at a higher level.

The present invention also includes a dicing die-bonding film comprising: a dicing film having a substrate and an adhesive layer formed on the substrate, and the bonding film laminated on the adhesive layer.

Since the dicing crystal film of the present invention includes the adhesive film, it is possible to manufacture a highly reliable semiconductor device with good yield.

Moreover, the present invention also includes a method of fabricating a semiconductor device, comprising the steps of: preparing a substrate to be prepared, wherein a substrate to be bonded with a first semiconductor element is mounted; and a bonding step of: dicing the die-cut film Then, the film is bonded to the semiconductor wafer; a dicing step is performed to form the second semiconductor element by cutting the semiconductor wafer and the bonding film; and a picking step of picking up the second semiconductor element together with the bonding film; and fixing step The first semiconductor element fixed to the object to be bonded is embedded by the bonding film picked up together with the second semiconductor element, and the second semiconductor element is fixed to the object to be bonded.

In the manufacturing method of the present invention, since the semiconductor device is manufactured using the dicing die-bonding film, it is possible to prevent corrosion of the first semiconductor element or the connection structure in the semiconductor device, which should be embedded in the film for embedding. Moreover, it is possible to prevent conduction between wirings, and it is possible to manufacture a highly reliable semiconductor device. Moreover, the step of self-crystallizing to pick-up can be performed favorably, and a semiconductor device can be manufactured efficiently. Further, since the first semiconductor element such as the controller can be fixed to the object to be bonded by the adhesive film, the wire required for electrical connection can be shortened, whereby the communication speed of the semiconductor package can be prevented from being lowered, and the manufacturing can be reduced. A high-quality semiconductor device that causes a failure of a wire due to external factors. Further, in the manufacturing method, since the first semiconductor element can be embedded in the bonded body by using the adhesive film, the bonding between the first semiconductor element and the adherend is facilitated, whereby the semiconductor device can be improved. Manufacturing yield.

In the manufacturing method, it is preferable that the adhesive film has a thickness T that is thicker than a thickness T ₁ of the first semiconductor element, and the adherend is bonded to the first semiconductor element by a wire bonding, and the thickness T and the thickness are The difference of T ₁ is 40 μm or more and 260 μm or less. Alternatively, it is preferable that the adhesive film has a thickness T which is thicker than a thickness T ₁ of the first semiconductor element, and the adherend is connected to the first semiconductor element, and the difference between the thickness T and the thickness T ₁ is It is 10 μm or more and 200 μm or less. The first semiconductor element can be preferably embedded in accordance with the connection pattern between the first semiconductor element and the object to be bonded.

The present invention also includes a semiconductor device obtained by the method of fabricating the semiconductor device.

1‧‧‧Exposed body

2‧‧‧Semiconductor wafer

3‧‧‧Adhesive layer

3a‧‧‧corresponding to the portion of the adhesive layer 3 of the semiconductor wafer attaching portion 22a

3b‧‧‧ corresponds to the portion other than the portion 3a of the adhesive layer 3 of the semiconductor wafer attaching portion 22a

4‧‧‧Substrate

5‧‧‧Cut film

10‧‧‧Cut crystal film

10'‧‧‧Cut crystal film

11‧‧‧1st semiconductor component

12‧‧‧2nd semiconductor component

13‧‧‧3rd semiconductor component

21‧‧‧1st film

22‧‧‧Next film

22'‧‧‧Next film

22a‧‧‧Semiconductor Wafer Attachment

23‧‧‧3rd follow-up film

31‧‧‧Connected wire

32‧‧‧Connected wire

41‧‧‧1st semiconductor component

43‧‧‧ protruding electrode

44‧‧‧ bottom filling material

80‧‧‧Comb copper wiring board

81‧‧‧Bronze wiring

82‧‧‧Next film

100‧‧‧Semiconductor device

200‧‧‧Semiconductor device

T‧‧‧The thickness of the film

T ₁ ‧‧‧The thickness of the first semiconductor component

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing a crystal cut crystal film according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view schematically showing a crystal cut crystal film according to another embodiment of the present invention.

Fig. 3A is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3B is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3C is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3D is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3E is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3F is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3G is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3H is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

4A is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

4B is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

4C is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

4D is a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

Fig. 5 is a schematic view showing the measurement procedure of the migration test.

The embodiment of the adhesive film of the present invention will be described below with reference to the drawings. In addition, some or all of the parts which are unnecessary in the description are omitted in the part or all of the drawings, and for the sake of convenience of explanation, there are portions which are enlarged or reduced, and the like.

[First Embodiment]

In the first embodiment, as shown in Fig. 1, a state of a diced die film in which an adhesive film 22 for embedding is laminated on a diced film 5 formed by laminating an adhesive layer 3 on a substrate 4 is used. The following is an example. In the present embodiment, an aspect in which the connection between the adherend and the first semiconductor element is realized by wire bonding is described.

<Next film>

In the adhesive film 22, the dielectric constant at 1 MHz after heat curing was set to 4.00 or less. The dielectric constant is preferably 3.50 or less, more preferably 3.00 or less. By setting the dielectric constant after thermal hardening to such a range, it is possible to suppress the possibility of becoming the first semiconductor in the semiconductor device. Corrosion of a bulk element or a connection structure (bonding wire or surface electrode, etc.) causes a movement of a charge or a charge similar to a structure such as an ion or a polar functional group in the film, and as a result, corrosion of the connection structure or conduction between wirings can be suppressed. Manufacturing high reliability semiconductor devices. The countermeasure for lowering the dielectric constant is not particularly limited, and from the viewpoint of suppressing charge transfer (inhibition of polarization) in the adhesive film, for example, by introducing a crosslinkable functional group, the degree of crosslinking is increased. The ionic substance is replaced with a nonionic substance, a polar functional group is crosslinked, and an insulating electrodeless filler is added. Further, the lower the lower limit of the dielectric constant is, the more preferable it is. However, if the degree of crosslinking is excessively increased in order to suppress the polarization, for example, warpage or peeling of the adhesive film may occur, and therefore, it may be 2 or more in practical use.

The composition of the adhesive film is not particularly limited, and examples thereof include an adhesive film consisting of only a single film of a bonding film, or a bonding film having a laminated structure in which a single film is laminated, or a single side of the core material or On both sides, an adhesive film or the like having a multilayer structure of a film is formed. Here, examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), and a use thereof. A resin substrate, a ruthenium substrate, or a glass substrate reinforced with glass fiber or plastic non-woven fibers. Further, the adhesive film and the cut wafer may be used in the form of an integrated one-piece film.

Next, the film system has a layer having a function as a function, and as a constituent material thereof, a thermoplastic resin and a thermosetting resin are used in combination. Further, the thermoplastic resin can also be used alone.

(thermoplastic resin)

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Polyene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, or polyamide resin such as 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate, polyterephthalic acid) A saturated polyester resin such as ethylene glycol) or PBT (polybutylene terephthalate), a polyamidoximine resin or a fluororesin. These thermoplastic resins can be used alone or in combination Use with more than two types. Among these thermoplastic resins, an acrylic resin which is less ionic impurities, has high heat resistance, and ensures reliability of a semiconductor element is particularly preferable.

The acrylic resin is not particularly limited, and one or more of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be mentioned. A polymer or the like as a component. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, a cyclohexyl group, and 2 -ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl Alkyl, or eicosyl, and the like.

In the case where the adhesive film contains an acrylic resin, the acrylic resin is usually dispersed in a state in which the crosslinked structure of the thermosetting resin such as an epoxy resin or a phenol resin is released, and has a sparse structure which is relatively easy to be polarized. Since the dielectric constant tends to increase due to the presence of such an acrylic resin, it is preferred to introduce a crosslinkable functional group into the acrylic resin to increase the degree of crosslinking of the acrylic resin itself or by using an epoxy resin. Crosslinking of a resin or the like to increase the degree of crosslinking, thereby reducing or suppressing polarization in the acrylic resin.

The introduction of the crosslinkable functional group into the acrylic resin can be preferably carried out by using an acrylic monomer having a crosslinkable functional group as a constituent monomer. The acrylic monomer having a crosslinkable functional group is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, maleic acid, and fumaric acid. a carboxyl group-containing monomer such as crotonic acid or the like; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate; 4-hydroxybutyl methacrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, (meth) acrylate 12- a hydroxyl group-containing monomer such as hydroxylauryl ester or acrylic acid (4-hydroxymethylcyclohexyl)-methyl ester; etc.; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamidamine-2- Sulfonic acid containing methyl propanesulfonic acid, (meth) acrylamide propyl sulfonic acid, sulfopropyl (meth) acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid a monomer having a phosphate group such as 2-hydroxyethyl acrylate or the like; a glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, or acrylic acid 3 -Methyl-3,4-epoxybutyl acrylate, 3-ethyl-3,4-epoxybutyl methacrylate, 5,6-epoxyhexyl (meth)acrylate, 5-methyl methacrylate 5-,6-epoxyhexyl ester, 5-ethyl-5,6-epoxyhexyl methacrylate, 6,7-epoxyheptyl (meth)acrylate, 3,4-cyclomethacrylate Oxycyclohexyl ester, 3,4-epoxycyclohexylmethyl methacrylate, 3,4-epoxycyclohexylethyl (meth)acrylate, 3,4-epoxycyclohexyl propyl methacrylate, A 3,4-epoxycyclohexyl butyl acrylate, 3,4-epoxycyclohexyl hexyl (meth) acrylate, 3,4-epoxycyclohexyl methacrylate, 3,4-epoxycyclohexyl acrylate Ethyl ester, 3,4-epoxycyclohexyl propyl acrylate, 3,4-epoxycyclohexyl acrylate, 3,4-epoxycyclohexyl acrylate, etc. Monomer; urethane acrylate monomer and the like.

(thermosetting resin)

Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a polyoxyxylene resin, or a thermosetting polyimide resin. These resins may be used singly or in combination of two or more. It is particularly preferable to use an epoxy resin which contains less ionic impurities such as corrosion semiconductor elements. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, and hydrogenated bisphenol A type can be used. Bifunctional epoxy such as bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolak type, o-cresol novolac type, trihydroxyphenylmethane type, tetrakisylethane type (Tetraphenylolethane type) An epoxy resin such as a resin or a polyfunctional epoxy resin; or a carbendazim type, a triglycidyl isocyanurate type or a glycidylamine type. These may be used singly or in combination of two or more. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferable. The reason is that the epoxy resins are rich in reactivity with the phenol resin as a hardener, and are resistant to heat. Excellent in sex.

Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a nonylphenol phenol aldehyde. A novolak type phenol resin such as a varnish resin; a polyphenolic phenol resin such as a novolac type phenol resin or a polyparaxyl styrene. These may be used singly or in combination of two or more. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferable. The reason for this is that the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin to the phenol resin is, for example, suitably adjusted so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitably, it is 0.8 to 1.2 equivalents. In other words, when the blending ratio of the two is out of the above range, a sufficient curing reaction is not performed, and the properties of the cured epoxy resin are easily deteriorated.

Further, in the present embodiment, it is particularly preferable to include an adhesive film of an epoxy resin, a phenol resin, and an acrylic resin. These resins have low ionic impurities and high heat resistance, so that the reliability of the semiconductor element can be ensured. In this case, a suitable blending ratio is 100 to 1300 parts by weight based on 100 parts by weight of the acrylic resin component.

(crosslinking agent)

In the case where the adhesive film of the present embodiment is crosslinked to some extent in advance, a polyfunctional compound which reacts with a functional group at the end of the molecular chain of the polymer or the like may be added as a crosslinking agent at the time of production. Thereby, the subsequent characteristics at a high temperature can be improved, and the improvement in heat resistance can be achieved.

As the above crosslinking agent, a previously known crosslinking agent can be used. In particular, polyisocyanate compounds such as methyl phenyl diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyhydric alcohol and a diisocyanate are more preferable. The amount of the crosslinking agent added is usually preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the crosslinking agent is more than 7 parts by weight, the subsequent force is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, the cohesive force is insufficient, which is not preferable. Further, in addition to the polyisocyanate compound, other polyfunctional compounds such as an epoxy resin may be contained as needed.

(inorganic filler)

Further, in the adhesive film of the present embodiment, an inorganic filler can be appropriately blended depending on the use thereof. The formulation of the inorganic filler can impart conductivity, or improve thermal conductivity, adjust the modulus of elasticity, and the like. Examples of the inorganic filler include ceramics such as ceria, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, and various inorganic powders of carbon. These may be used singly or in combination of two or more. Among them, cerium oxide, particularly molten cerium oxide, can be suitably used from the viewpoint of insulating properties. Further, the average particle diameter of the inorganic filler is preferably in the range of 0.1 to 80 μm.

The content of the inorganic filler is preferably set to 10 to 80% by weight, more preferably 20 to 60% by weight based on the total weight of the components (excluding the solvent) constituting the adhesive film.

(thermosetting catalyst)

As a constituent material of the adhesive film, a heat curing catalyst can also be used. When the adhesive film contains an acrylic resin, an epoxy resin, or a phenol resin, the content thereof is preferably 0.01 to 3 parts by weight, more preferably 0.05 to 1 part by weight, per 100 parts by weight of the acrylic resin component. By setting the content to the above lower limit or more, the epoxy groups which are not reacted at the time of die bonding can be polymerized in the subsequent step, and the unreacted epoxy group can be reduced or eliminated. As a result, the semiconductor element can be subsequently fixed to the object to be bonded, and a semiconductor device without peeling can be manufactured. On the other hand, by setting the blending ratio to be equal to or lower than the above upper limit, it is possible to prevent the occurrence of hardening inhibition.

The thermosetting catalyst is not particularly limited, and examples thereof include an imidazole compound, a triphenylphosphine compound, an amine compound, a triphenylborane compound, and a trihalide borane compound. These may be used singly or in combination of two or more.

Examples of the imidazole-based compound include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11Z), and 2-heptadecylimidazole (trade name: C17Z), and , 2-dimethylimidazole (trade name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4 -methylimidazole (trade name: 2P4MZ), 1-benzyl-2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-cyanoethyl -2-methylimidazole (trade name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenylimidazolium Triphenyl acid salt (trade name: 2PZCNS-PW), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl (trade name: 2MZ-A), 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl (trade name: C11Z-A), 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl (trade name: 2E4MZ-A), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl Isocyanuric acid adduct (trade name: 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name: 2PHZ-PW), 2-phenyl-4-methyl-5- Hydroxymethylimidazole (trade name: 2P4MHZ-PW), etc. (all manufactured by Shikoku Chemicals Co., Ltd.).

The triphenylphosphine-based compound is not particularly limited, and examples thereof include triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, and diphenyl. Triorganophosphine such as tolylphosphine, tetraphenylphosphonium bromide (trade name: TPP-PB), methyltriphenylphosphonium bromide (trade name: TPP-MB), methyltriphenylphosphonium chloride (product) Name: TPP-MC), methoxymethyltriphenylphosphonium (trade name: TPP-MOC), benzyltriphenylphosphonium chloride (trade name: TPP-ZC), etc. (all manufactured by Beixing Chemical Co., Ltd.) . Moreover, as the triphenylphosphine-based compound, it is preferred that the epoxy resin exhibits substantially no solubility. If the epoxy resin is insoluble, it is possible to suppress excessive heat hardening. The thermosetting catalyst having a triphenylphosphine structure and exhibiting insolubility to the epoxy resin is, for example, methyltriphenylphosphonium (trade name: TPP-MB). In addition, the above "insoluble" means that the thermosetting catalyst containing a triphenylphosphine-based compound is insoluble to a solvent containing an epoxy resin, and more specifically, is in a range of a temperature of 10 to 40 ° C. Will dissolve 10% by weight or more.

The triphenylborane-based compound is not particularly limited, and examples thereof include tris(p-methylphenyl)phosphine. Further, the triphenylborane-based compound also includes a structure having a triphenylphosphine structure. The compound having a triphenylphosphine structure and a triphenylborane structure is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K) and tetra-p-tolylboronic acid. Phenylhydrazine (trade name: TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S), etc. Both are manufactured by Beixing Chemical Company).

The amine-based compound is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Co., Ltd.), dicyandiamide (manufactured by Nacalai Tesque Co., Ltd.), and the like.

The trihalogenated borane-based compound is not particularly limited, and examples thereof include boron trichloride.

(other additives)

Further, in the adhesive film of the present embodiment, in addition to the above inorganic filler, other additives may be appropriately formulated as needed. Examples of other additives include a flame retardant, a decane coupling agent, an ion trapping agent, and the like.

Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These may be used singly or in combination of two or more.

Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropane. Methyl diethoxy decane, and the like. These compounds may be used singly or in combination of two or more.

Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These may be used singly or in combination of two or more.

The storage modulus at 25 ° C of the adhesive film before thermal curing is preferably 10 MPa or more and 10000 MPa or less, more preferably 50 MPa or more and 7,000 MPa or less, further preferably 100 MPa or more and 5000 MPa or less. By using the above upper limit, the semiconductor can be used Good adhesion of the wafer. At the same time, by using the above lower limit, it is possible to prevent the adhesion of the adjacent films adjacent to each other after the dicing. By setting the storage elastic modulus at 25 ° C to the above range as described above, the adhesion and adhesion as the adhesive film can be improved.

Further, the method for measuring the storage elastic modulus was carried out in accordance with the following procedure. For the adhesive film before thermosetting, the storage elastic modulus at 25 ° C was measured using a viscoelasticity measuring device (manufactured by Rheometric Co., Ltd., model: RSA-II). More specifically, the film having a thickness of 120 μm was cut so that the sample size was 30 mm long by 10 mm wide, and the measurement sample was attached to a film extension measuring jig at a temperature of -30 to 100 ° C at a frequency of 1.0 Hz and a strain of 0.025. The measurement was carried out under the conditions of a temperature increase rate of 10 ° C/min, and the measurement value at 25 ° C was read, thereby obtaining.

In the film 22, the melt viscosity at 120 ° C and a shear rate of 50 s ^-1 is preferably 50 Pa. s above and 3000Pa. s below. The lower limit of the above melt viscosity is preferably 60 Pa. s or more, and further preferably 70 Pa. s above. The upper limit of the above melt viscosity is more preferably 2000 Pa. s is below, and further preferably 1000 Pa. s below. When the second semiconductor element is fixed to the object to be bonded by the adhesive film, the adhesion of the adhesive film to the surface structure of the adherend can be improved, and the adhesion between the adhesive film and the adherend can be improved. Sex. As a result, generation of voids in the semiconductor device can be prevented, and a highly reliable semiconductor device can be manufactured. At the same time, when the second semiconductor element is fixed to the object to be bonded by the adhesive film by using the lower limit, the protrusion of the adhesive film in a plan view from the region of the second semiconductor element can be reduced.

Further, the method for measuring the melt viscosity at 120 ° C and a shear rate of 50 s ^-1 before the thermal curing is as follows. Specifically, it was measured by a parallel plate method using a rheometer (manufactured by HAAKE Co., Ltd., RS-1). 0.1 g of the sample was taken from the film, and it was poured into a plate which was previously heated at 120 °C. The shear rate was set to 50 s ^-1 , and the value after 300 seconds from the start of the measurement was defined as the melt viscosity. The gap between the plates was set to 0.1 mm.

<Cut crystal film>

As the above-mentioned dicing film, for example, an adhesive layer 3 is laminated on the substrate 4. Next, the film 22 is laminated on the adhesive layer 3. Further, as shown in FIG. 2, the film 22' may be formed only on the semiconductor wafer attaching portion 22a (see FIG. 1).

(substrate)

The base material 4 serves as a strength matrix of the crystal cut crystal films 10 and 10'. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolypropylene, block copolymer, homopolypropylene, polybutene, poly Polyolefin such as methylpentene; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene- Polyesters such as butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, etc.; polycarbonate, polyimine, polyether Ether ketone, polythenimine, polyether phthalimide, polyamidamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, polyvinyl chloride , polyvinylidene chloride, cellulose resin, polyoxyn resin, metal (foil), paper, and the like. In the case where the adhesive layer 3 is of an ultraviolet curing type, the substrate 4 is preferably transparent to ultraviolet rays.

Moreover, as a material of the base material 4, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film may be used without extension, and a one-axis or two-axis extension processor may be used as needed. When the resin sheet to which heat shrinkability is imparted by the stretching treatment or the like is used, the substrate 4 can be thermally shrunk after dicing, whereby the adhesion area between the adhesive layer 3 and the adhesive film 22 can be reduced, and the semiconductor wafer can be recovered. It's easy to make.

In order to improve adhesion to adjacent layers, retention, etc., the surface of the substrate 4 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, free radiation treatment, or the like. A coating treatment using a primer (for example, an adhesive substance described later).

The substrate 4 can be appropriately selected from the same species or different species, and can be obtained by blending a plurality of species as needed. Further, in order to impart an antistatic ability to the substrate 4, a conductive layer having a thickness of about 30 to 500 Å including a metal, an alloy, or the like may be provided on the substrate 4. Evaporation of a substance. The substrate 4 may be a single layer or a multilayer of two or more.

The thickness of the base material 4 is not particularly limited and can be appropriately determined, and is usually about 5 to 200 μm.

Further, the substrate 4 may contain various additives (for example, a color former, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) within a range not impairing the effects of the present invention and the like. ).

(adhesive layer)

The adhesive for forming the adhesive layer 3 is not particularly limited as long as it can control the peelable film 3 to be peelable. For example, a usual pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. The pressure-sensitive adhesive is preferably polymerized on the basis of an acrylic polymer in terms of cleaning and cleaning properties of an organic solvent such as a semiconductor wafer or glass, which is contaminated with an ultra-pure water or an organic solvent such as an alcohol. Acrylic adhesive for the substance.

Examples of the acrylic polymer include those in which an acrylate is used as a main monomer component. Examples of the acrylate include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester, Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, decyl, decyl, isodecyl, undecyl, dodecyl, ten The alkyl group such as a trialkyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester has a carbon number of 1 to 30, especially a linear chain having a carbon number of 4 to 18. One or more of a cycloalkyl (meth) acrylate (such as a cyclopentyl ester, a cyclohexyl ester, etc.), or an acrylic polymer used as a monomer component, etc. . Further, (meth) acrylate means acrylate and/or methacrylate, and all (meth) of the present invention have the same meaning.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the above alkyl (meth)acrylate or cycloalkyl ester as needed for the purpose of modification such as cohesive force and heat resistance. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, and Ikon. a carboxyl group-containing monomer such as acid, maleic acid, fumaric acid or crotonic acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate and 2-hydroxyl (meth)acrylate Propyl ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, (methyl) a hydroxyl group-containing monomer such as 12-hydroxylauryl acrylate or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylic acid hydrazine a sulfonic acid group-containing monomer such as amine-2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate, or (meth)acryloxynaphthalenesulfonic acid; a phosphate group-containing monomer such as 2-hydroxyethyl acrylate or hydroxyamine; acrylamide or acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of the copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components in terms of adhesion characteristics and the like.

The above acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more kinds of monomers. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization. It is preferable that the content of the low molecular weight substance is small in terms of preventing contamination of the cleaned adherend or the like. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

Further, in the above-mentioned adhesive, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used. External cross-linking Specific examples of the method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent is added and reacted. In the case of using an external crosslinking agent, the amount used is appropriately determined depending on the balance with the base polymer to be crosslinked, and further depending on the use as the adhesive. It is usually preferably 10 parts by weight or less, more preferably 0.1 to 10 parts by weight, based on 100 parts by weight of the base polymer. Further, in the adhesive, if necessary, in addition to the above components, additives such as various conventionally known adhesion-imparting agents and anti-aging agents may be used.

The adhesive layer 3 can be formed using a radiation hardening type adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiating radiation such as ultraviolet rays, and the adhesion can be easily lowered. For example, by irradiating only the portion 3a of the adhesive layer 3 shown in Fig. 2 with radiation, the difference in adhesion to the portion 3b can be set.

Further, by curing the radiation-curable pressure-sensitive adhesive layer 3 together with the adhesive film 22', the portion 3a in which the adhesion is remarkably lowered can be easily formed. Since the adhesive film 22' is attached to the portion 3a for lowering the adhesion by hardening, the interface between the portion 3a and the adhesive film 22' has a property of being easily peeled off at the time of picking up. On the other hand, the portion where the radiation is not irradiated has a sufficient adhesive force to form the portion 3b.

As described above, in the adhesive layer 3 of the dicing die-bonding film 10 shown in Fig. 1, the portion 3b formed of the uncured radiation-curable adhesive adheres to the adhesive film 22, thereby ensuring retention during dicing. force. In this manner, the radiation-curable adhesive can support the adhesive film 22 for fixing the semiconductor wafer to the adherend such as the substrate in a well-balanced/peelable balance. In the adhesive layer 3 of the diced crystal film 10' shown in Fig. 2, the above portion 3b can fix the wafer ring.

The radiation-curable adhesive is not particularly limited as long as it has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. The radiation-curable adhesive agent is, for example, an additive type in which a radioactive monomer component or an oligomer component is blended in a usual pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Radiation hardening adhesive.

Examples of the radiation curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and the like. Methyl hydroxymethane tetra(meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate Ester, 1,4-butanediol di(meth)acrylate, and the like. In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the weight average molecular weight thereof is 100. Those in the range of ~30000 or so are more appropriate. The amount of the radiation-hardening monomer component or the oligomer component can be appropriately determined depending on the type of the above-mentioned adhesive layer to reduce the adhesion of the adhesive layer. In general, it is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

In addition, as the radiation-curable adhesive, in addition to the above-described additive-type radiation-curable adhesive, it is possible to use a carbon-carbon double bond in a polymer side chain or a main chain or at a main chain terminal. An intrinsic type radiation curable adhesive for polymers. Since the intrinsic type radiation curable adhesive does not need to contain or contain a large amount of an oligomer component as a low molecular component, the oligomer component or the like does not move over the adhesive layer with time, and a stable layer structure can be formed. The adhesive layer is preferred.

The base polymer having a carbon-carbon double bond described above can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The method of introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, when a carbon-carbon double bond is introduced into the polymer side chain, molecular design is easily performed. For example, a method of preliminarily bringing an acrylic polymer and having a functional group The monomer is copolymerized, and then a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is subjected to a condensation or addition reaction while maintaining the radiation hardenability of the carbon-carbon double bond.

Examples of combinations of such functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferred in terms of the ease of tracking the reaction. Further, as long as a combination of the above-mentioned acrylic polymer having a carbon-carbon double bond is produced by a combination of the functional groups, the functional group may be located on either side of the acrylic polymer and the above compound, In a preferred combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylonitrile isocyanate, 2-methylpropenyloxyethyl isocyanate, m-isopropenyl-α, α- Dimethylbenzyl isocyanate and the like. Further, as the acrylic polymer, an ether compound of the above-exemplified hydroxyl group-containing monomer or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. Copolymerization.

The above-mentioned intrinsic radiation curable adhesive can be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or can be blended with the above-mentioned radiation curable monomer component without deteriorating the properties. Or oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

The radiation curable adhesive preferably contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone and α-hydroxy-α,α'-dimethylacetophenone. An α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone An acetophenone-based compound such as 2,2-diethoxyacetophenone or 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropan-1-one; a benzoin ether compound such as benzoin ethyl ether, benzoin isopropyl ether, fennel aceton methyl ether; a ketal compound such as benzoin dimethyl ketal; 2-naphthalene sulfonium chloride, etc. Aromatic sulfonium chloride compound; photoactive lanthanide compound such as 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl) hydrazine; benzophenone, benzhydrazinobenzoic acid a benzophenone compound such as 3,3'-dimethyl-4-methoxybenzophenone; 9-oxygen sulfur 2-chloro 9-oxosulfur 2-methyl 9-oxosulfur 2,4-dimethyl 9-oxosulfur Isopropyl 9-oxosulfur 2,4-dichloro 9-oxosulfur 2,4-diethyl 9-oxosulfur 2,4-diisopropyl 9-oxosulfur 9-oxosulfur a compound; camphorquinone; a halogenated ketone; a fluorenylphosphine oxide; a decylphosphonate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

When the adhesive layer 3 is formed by a radiation-curable adhesive, it is preferable to irradiate a part of the adhesive layer 3 with radiation so that the adhesive force of the portion 3a is different from that of the portion 3b. In the dicing die-bonding film of FIG. 2, for example, the relationship of the adhesion of the portion 3a to the SUS304 plate (#2000 polishing) is the adhesion of the portion 3b.

The method of forming the above-described portion 3a on the above-mentioned adhesive layer 3 is a method in which the radiation-curable adhesive layer 3 is formed on the substrate 4, and the portion 3a is locally irradiated with radiation to be cured. The local radiation irradiation can be performed by a photomask formed with a pattern corresponding to a portion 3b or the like other than the portion 3a of the adhesive layer 3 of the semiconductor wafer attaching portion 22a. Further, a method of curing by irradiation with ultraviolet rays in a dot shape or the like can be mentioned. The formation of the radiation hardening type adhesive layer 3 can be carried out by transferring the film provided on the separator to the substrate 4. The local radiation hardening can also be performed on the radiation-curable adhesive layer 3 provided on the separator.

Further, in the case where the adhesive layer 3 is formed by the radiation-curable adhesive, all or a part of the portion other than the portion 3a corresponding to the semiconductor wafer attaching portion 22a of at least one side of the substrate 4 can be used. After the shading is performed, the radiation-curable adhesive layer 3 is formed thereon, and the radiation is irradiated to the portion corresponding to the semiconductor wafer attaching portion 22a. The portion 3a is hardened to form the above-mentioned portion 3a which lowers the adhesion. The light-shielding material can be produced by printing or vapor-depositing a material which can be a photomask on a support film. According to this production method, the crystal cut crystal film 10 of the present invention can be efficiently produced.

Further, when radiation is irradiated, when it is caused by hardening by oxygen, it is preferable to block oxygen (air) from the surface of the radiation-curable adhesive layer 3 by a certain method. For example, a method of coating the surface of the pressure-sensitive adhesive layer 3 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

The thickness of the pressure-sensitive adhesive layer 3 is not particularly limited, and is preferably about 1 to 50 μm from the viewpoint of preventing the defect of the cut surface of the wafer or the compatibility of the adhesion of the subsequent layer. It is preferably 2 to 30 μm, more preferably 5 to 25 μm.

Further, the adhesive layer 3 may contain various additives (for example, coloring agents, tackifiers, extenders, fillers, adhesion-imparting agents, plasticizers, anti-aging) within a range not impairing the effects of the present invention and the like. Agents, antioxidants, surfactants, crosslinkers, etc.).

(Following the method of manufacturing the film)

The adhesive film of this embodiment is produced, for example, as follows. First, an adhesive composition for film formation is formed. The preparation method is not particularly limited. For example, a thermosetting resin, a thermoplastic resin, and other additives described in the following film can be placed in a container, dissolved in an organic solvent, and stirred until uniform. It is obtained in the form of a solution of the subsequent composition.

The organic solvent is not particularly limited as long as it can uniformly dissolve, knead or disperse the components constituting the adhesive film, and a conventionally known one can be used. Examples of such a solvent include ketone solvent such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone or cyclohexanone, toluene, xylene, and the like. Methyl ethyl ketone, cyclohexanone or the like is preferably used in terms of a fast drying speed and a low cost.

The adhesive composition solution prepared as described above is applied to the separator to form a coating film in a specific thickness, and then the coating film is dried under specific conditions. As a partition For the release film, polyethylene terephthalate (PET), polyethylene, polypropylene, or a plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent may be used. Or paper, etc. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Thereby, the adhesive film of this embodiment can be obtained.

(Method of manufacturing a crystal-cutting film)

The dicing crystal films 10 and 10' can be produced, for example, by separately preparing a dicing film and a bonding film in advance, and finally bonding them together. Specifically, it can be produced in accordance with the following procedures.

First, the substrate 4 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like. .

Then, an adhesive composition for forming an adhesive layer is prepared. A resin or an additive described in the section of the adhesive layer is formulated in the adhesive composition. After the prepared adhesive composition solution is applied onto the substrate 4 to form a coating film, the coating film is dried under specific conditions (heat-crosslinking as needed) to form an adhesive layer 3. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, after the pressure-sensitive adhesive composition is applied onto the separator to form a coating film, the coating film is dried under the above drying conditions to form the pressure-sensitive adhesive layer 3. Thereafter, the adhesive layer 3 is attached to the substrate 4 together with the separator. Thereby, a dicing film including the substrate 4 and the adhesive layer 3 can be produced.

Then, the separator is peeled off from the dicing film so that the adhesive film and the pressure-sensitive adhesive layer are bonded to each other. The bonding can be performed by, for example, crimping. In this case, the lamination temperature is not particularly limited, and is, for example, preferably 30 to 50 ° C, more preferably 35 to 45 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm. Then, the separator on the film was peeled off to obtain a crystal cut crystal film of the present embodiment.

<Method of Manufacturing Semiconductor Device>

In the method of manufacturing a semiconductor device according to the present embodiment, the adherend (attachment preparation step) in which at least one first semiconductor element is mounted (fixed) is prepared in advance via the first fixing step and the first bonding step. The first semiconductor element is embedded by the dicing and pick-up film, and the second semiconductor element different from the first semiconductor element is fixed to the object to be bonded. 3A to 3H are each a cross-sectional view schematically showing one step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

(1st fixing step)

As shown in FIG. 3A, in the first fixing step, at least one first semiconductor element 11 is fixed to the object to be bonded 1. The first semiconductor element 11 is fixed to the adherend 1 via the first adhesive film 21 . In FIG. 3A, only one first semiconductor element 11 is shown. However, two, three, four, or five or more plural first semiconductor elements 11 may be fixed to each other according to the specifications of the target semiconductor device. The body 1 is attached.

(first semiconductor element)

The first semiconductor element 11 is not particularly limited as long as it is smaller than the semiconductor element (second semiconductor element 12; see FIG. 3F) laminated in the second layer in plan view. For example, it can be suitably used as a semiconductor element. A controller or memory chip or logic chip. The controller controls the operation of each of the stacked semiconductor elements, so that a plurality of wires are usually connected. The communication speed of the semiconductor package is affected by the length of the wire. In the present embodiment, since the first semiconductor element 11 is fixed to the object to be bonded 1 and is located at the lowermost layer, the length of the wire can be shortened, and even if the number of layers of the semiconductor element is increased, It is also possible to suppress a decrease in the communication speed of the semiconductor package (semiconductor device).

The thickness of the first semiconductor element 11 is not particularly limited, but is usually 100 μm or less. Moreover, with the thinning of the semiconductor package in recent years, the first semiconductor element 11 of 75 μm or less and further 50 μm or less is gradually used.

(by the body)

Examples of the adherend 1 include a substrate, a lead frame, and other semiconductor elements. As the substrate, a conventionally known substrate such as a printed wiring board can be used. Further, as the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame or a glass epoxy resin or BT (Bismaleimide-III) may be used. ), an organic substrate such as polyimide. However, the present embodiment is not limited thereto, and includes a circuit board that can be mounted with a semiconductor element and electrically connected to the semiconductor element.

(1st film)

As the first adhesive film 21, the above-mentioned adhesive underlayer film can be used, and a conventionally known adhesive film for fixing a semiconductor element can be used. In the case where the adhesive film for embedding is used, the first adhesive film 21 does not need to be embedded in the semiconductor element, and therefore the thickness may be reduced to about 5 μm to 60 μm.

(fixed method)

As shown in FIG. 3A, the first semiconductor element 11 is bonded to the adherend 1 via the first adhesive film 21. As a method of fixing the first semiconductor element 11 to the adherend 1, for example, the first adhesive film 21 is laminated on the adherend 1, and then the first bonding film is placed on the first bonding film. A method of laminating the first semiconductor element 11 on 21. Moreover, the first semiconductor element 11 to which the first adhesive film 21 is attached in advance may be placed on the adherend 1 to be laminated.

Since the first adhesive film 21 is in a semi-hardened state, the first adhesive film 21 is placed on the adherend 1 and then subjected to heat treatment under specific conditions, whereby the first adhesive film 21 is thermally cured to fix the first semiconductor element 11 . On the body 1 to be attached. The temperature at the time of heat treatment is preferably from 100 to 200 ° C, more preferably from 120 ° C to 180 ° C. Further, the heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(1st wire bonding step)

The first bonding step is a step of electrically connecting the front end of the terminal portion (for example, the internal lead) of the adherend 1 to the electrode pad (not shown) on the first semiconductor element 11 by the bonding wire 31 (refer to FIG. 3B). . As the bonding wire 31, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding can be carried out at 80 to 250 ° C, preferably 80 to 220 ° C. Further, the heating time can be performed in seconds to minutes. The wiring can be performed by heating the vibration energy generated by the ultrasonic wave and the pressure of the pressing force generated by the application of the pressure in a state where the temperature is within the above temperature range.

(wafer bonding step)

Further, as shown in FIG. 3C, the semiconductor wafer 2 is pressure-bonded to the embedding adhesive film 22 in the crystal cut film 10, and then held and fixed (bonding step). This step is carried out while pressing on one side by a pressing means such as a pressure roller.

(Cut step)

Then, as shown in FIG. 3D, the dicing of the semiconductor wafer 2 is performed. Thereby, the semiconductor wafer 2 is cut into a specific size and singulated, and the semiconductor wafer 12 is manufactured (the dicing step). The dicing can be performed, for example, from the circuit surface side of the semiconductor wafer 2 in accordance with a conventional method. Further, in this step, for example, a cutting method called a full cut which is cut into the crystal cutting film 5 or the like can be employed. The crystal cutting device used in this step is not particularly limited, and those known in the prior art can be used. Further, since the semiconductor wafer is subsequently fixed by the dicing die-bonding film 10, it is possible to suppress not only wafer defects or wafer scattering but also damage of the semiconductor wafer 2. Moreover, since the adhesive film 22 for embedding is used, it is possible to prevent the subsequent dicing, and the next picking step can be performed satisfactorily.

(pickup step)

As shown in FIG. 3E, in order to peel off the semiconductor wafer 12 which is subsequently fixed to the crystal cut film 10, the semiconductor wafer 12 is picked up together with the embedding film 22 (pickup step). The method of picking up is not particularly limited, and various methods known in the prior art can be employed. For example, each semiconductor wafer 12 is lifted up from the side of the substrate 4 by a needle, and picked up by a pick-up device. A method of taking the semiconductor wafer 12 that is lifted up, and the like.

Here, in the case where the adhesive layer 3 is of an ultraviolet curing type, the pickup is performed by irradiating the adhesive layer 3 with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 3 to the adhesive film 22 is lowered, and peeling of the semiconductor wafer 12 becomes easy. As a result, pickup can be performed without damaging the semiconductor wafer. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. Moreover, as a light source used for ultraviolet irradiation, a high pressure mercury lamp, a microwave excitation type lamp, a chemical lamp, etc. can be used.

(2nd fixing step)

In the second fixing step, the first semiconductor element 11 that is separately fixed to the adherend 1 is embedded by the embedding adhesive film 22 picked up together with the second semiconductor element 12, and the first semiconductor element 11 is bonded to the first semiconductor element 11 The second semiconductor element 12 is different from the above-described adherend 1 (see FIG. 3F). The embedding adhesive film 22 has a thickness T that is thicker than the thickness T _{1 of} the first semiconductor element 11 described above. In the present embodiment, the electrical connection between the adherend 1 and the first semiconductor element 11 is achieved by wire bonding, and therefore the difference between the thickness T and the thickness T ₁ is preferably 40 μm or more and 260 μm or less. The lower limit of the difference between the thickness T and the thickness T ₁ is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably 60 μm or more. Further, the upper limit of the difference between the thickness T and the thickness T ₁ is preferably 260 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less. In this way, the thickness of the semiconductor device as a whole can be reduced, and the contact between the first semiconductor element 11 and the second semiconductor element 12 can be prevented, and the entire first semiconductor element 11 can be embedded in the interior of the embedding film 22, thereby realizing The first semiconductor element 11 as a controller is fixed to the adherend 1 (i.e., fixed on the lowermost layer where the length of the wire is the shortest).

The thickness T of the adhesive film 22 to be used may be appropriately set as long as the thickness T ₁ of the first semiconductor element 11 and the amount of wire protrusion are considered so as to be able to embed the first semiconductor element 11 , and the lower limit thereof is preferably 80 μm or more. It is 100 μm or more, and more preferably 120 μm or more. On the other hand, the upper limit of the thickness T is preferably 300 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less. By thus making the adhesive film relatively thick, the thickness of the normal controller can be substantially covered, and the first semiconductor element 11 can be easily embedded in the adhesive film 22 for embedding.

(second semiconductor element)

The second semiconductor element 12 is not particularly limited, and for example, a memory chip that is controlled by the operation of the first semiconductor element 11 as a controller can be used.

(fixed method)

As a method of fixing the second semiconductor element 12 to the object to be bonded 1, as in the case of the first fixing step, for example, the bonding film 22 for lamination is laminated on the object 1 to be bonded, and then the wire bonding surface is formed. The method of stacking the second semiconductor element 12 on the embedding adhesive film 22 is performed on the upper side. Moreover, the second semiconductor element 12 to which the embedding adhesive film 22 is attached may be placed on the adherend 1 to be laminated.

In order to allow the first semiconductor element 11 to easily enter and be embedded in the embedding film 22, it is preferable to heat the embedding film 22 at the time of die bonding. The heating temperature is preferably a temperature of 80 ° C or more and 150 ° C or less, more preferably 100 ° C or more and 130 ° C or less, as long as the temperature for embedding the adhesive film 22 is softened and not completely thermally cured. At this time, it is also possible to pressurize at 0.1 MPa or more and 1.0 MPa or less.

Since the melt viscosity of the adhesive film 22 at 120 ° C and the shear rate of 50 s ^-1 is set to a specific range, the surface structure (surface unevenness) of the adhesive film 22 for the adherend ¹ can be improved. The followability improves the adhesion between the adhesive film 22 and the adherend 1 . When the second semiconductor element 12 is fixed to the adherend 1 by the embedding adhesive film 22, the amount of protrusion of the embedding adhesive film 22 in the plan view from the region of the second semiconductor element 12 can be reduced.

Since the adhesive film 22 is in a semi-hardened state, the adhesive film 22 is placed on the adherend 1 and then subjected to heat treatment under specific conditions, whereby the adhesive film 22 is thermally cured to form the second semiconductor. The element 12 is fixed to the adherend 1 . About the temperature at which heat treatment is performed The degree is preferably from 100 to 200 ° C, more preferably from 120 ° C to 180 ° C. Further, the heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

At this time, the shearing adhesion force of the embedding film 22 for thermal embedding with respect to the adherend 1 is preferably 0.1 MPa or more, more preferably 0.2 to 10 MPa at 25 to 250 °C. When the shearing force of the embedding film 22 is set to 0.1 MPa or more, the ultrasonic film for the second semiconductor element 12 can be suppressed from being subjected to ultrasonic vibration or heating in the wire bonding step. Shear deformation occurs in the second semiconductor element 12 or on the adhesion surface of the bonding body 1. In other words, it is possible to prevent the second semiconductor element 12 from moving due to ultrasonic vibration during wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

In the adhesive underlayer film 22, since the dielectric constant after thermal curing is set to a specific range, the first semiconductor element 11 or its associated electrode pad, bonding wire 31, and wiring are used even by the adhesive bonding film 22. By embedding, it is possible to suppress such corrosion and prevent conduction between wirings, thereby manufacturing a highly reliable semiconductor device.

Thereafter, similarly to the first bonding step, the step of electrically connecting the second semiconductor element and the object to be bonded by the bonding wires can be appropriately provided.

(3rd fixing step)

In the third fixing step, the third semiconductor element 13 of the same type or different type as the second semiconductor element is fixed to the second semiconductor element 12 (see FIG. 3G). The third semiconductor element 13 is fixed to the second semiconductor element 12 via the third adhesive film 23 .

(third semiconductor element)

The third semiconductor element 13 may be a memory wafer of the same type as the second semiconductor element 12 or a memory wafer different from the second semiconductor element 12. The thickness of the third semiconductor element 13 can also be appropriately set according to the specifications of the target semiconductor device.

(3rd follow-up film)

As the third adhesive film 23, the first adhesive film in the first fixing step can be suitably used. 21 the same. When the embedding adhesive film 22 is used as the third adhesive film 23, since it is not necessary to embed other semiconductor elements, the thickness may be reduced to about 5 μm to 60 μm.

(fixed method)

As shown in FIG. 3G, the third semiconductor element 13 is bonded to the second semiconductor element 12 via the third bonding film 23. As a method of fixing the third semiconductor element 13 to the second semiconductor element 12, for example, the third bonding film 23 is laminated on the second semiconductor element 12, and then the third bonding film 23 is placed on the third side. Next, a method of laminating the third semiconductor element 13 on the film 23 is performed. Further, the third semiconductor element 13 to which the third adhesive film 23 is attached in advance may be placed on the second semiconductor element 12 to be laminated. In order to wire-bond the second semiconductor element 12 and the third semiconductor element 13 to be described later, the third semiconductor element 13 is opposed to the electrode pad of the wire bonding surface (upper surface) of the second semiconductor element 12 so as to avoid it. The second semiconductor element 12 is staggered and fixed. In this case, when the third adhesive film 23 is attached to the upper surface of the second semiconductor element 12 in advance, the portion of the third adhesive film 23 that protrudes from the upper surface of the second semiconductor element 12 (so-called overhang) The (overhang) portion is bent to adhere to the side surface of the second semiconductor element 12 or the side surface of the buried adhesive film 22, causing an unexpected failure. Therefore, in the third fixing step, it is preferable that the third bonding film 23 is attached to the third semiconductor element 13 in advance, and is placed on the second semiconductor element 12 to be laminated.

Since the third adhesive film 23 is also in a semi-hardened state, the third adhesive film 23 is placed on the second semiconductor element 12, and then heat treatment under specific conditions is performed to thermally cure the third adhesive film 23 to form the third semiconductor. The element 13 is fixed to the second semiconductor element 12. Further, in consideration of the elastic modulus of the third adhesive film 23 or the process efficiency, the third semiconductor element 13 may be fixed without heat treatment. The temperature at the time of heat treatment is preferably from 100 to 200 ° C, more preferably from 120 ° C to 180 ° C. Further, the heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(2nd wire bonding step)

The second bonding step is a step of electrically connecting an electrode pad (not shown) on the second semiconductor element 12 and an electrode pad (not shown) on the third semiconductor element 13 by a bonding wire 32 (see FIG. 3H). . The material of the wire or the wire bonding condition can be appropriately the same as the first wire bonding step.

(semiconductor device)

By the above steps, the semiconductor device 100 in which three semiconductor elements are stacked in a plurality of specific bonding films can be manufactured. Further, by repeating the same procedure as the third fixing step and the second bonding step, a semiconductor device in which four or more semiconductor elements are stacked can be manufactured.

(sealing step)

After laminating a specific number of semiconductor elements, a sealing step of resin sealing the entire semiconductor device 100 may be performed. The sealing step is a step (not shown) of sealing the semiconductor device 100 with a sealing resin. This step is performed to protect the semiconductor element mounted on the adherend 1 or the bonding wires. This step is performed, for example, by molding a resin for sealing using a mold. As the sealing resin, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually 60 to 90 seconds at 175 ° C. However, the present embodiment is not limited thereto, and for example, it may be cured at 165 to 185 ° C for several minutes. Further, in this step, the resin may be pressurized at the time of sealing. At this time, the pressure of the pressurization is preferably from 1 to 15 MPa, more preferably from 3 to 10 MPa.

(post-hardening step)

In the present embodiment, the hardening step after the post-curing of the sealing resin may be performed after the sealing step. In this step, the sealing resin which is insufficiently hardened in the sealing step described above is completely cured. The heating temperature in this step varies depending on the type of the sealing resin, and is, for example, in the range of 165 to 185 ° C, and the heating time is about 0.5 to 8 hours. The semiconductor package can be fabricated by a sealing step or a post-hardening step.

[Second embodiment]

In the first embodiment, the first semiconductor element is fixed to be attached by the bonding film. The body is electrically connected to each other by wire bonding. However, in the second embodiment, the connection and the electrical connection between the two are achieved by using a flip chip connection provided on the bump electrode of the first semiconductor element. Therefore, in the second embodiment, only the fixed pattern in the first fixing step is different from that in the first embodiment. Therefore, the differences will be mainly described below.

(1st fixing step)

In the first embodiment, in the first fixing step, the first semiconductor element 41 is fixed to the object to be bonded 1 by a flip chip connection (see FIG. 4A). In the flip chip connection, the circuit surface of the first semiconductor element 41 and the so-called facedown mounting which faces the adherend 1 are formed. The first semiconductor element 41 is provided with a plurality of bump electrodes 43 such as bumps, and the bump electrodes 43 are connected to electrodes (not shown) on the adherend 1. Further, between the adherend 1 and the first semiconductor element 41, the underfill material 44 is filled for the purpose of relaxing the difference in thermal expansion coefficient between the two and the space therebetween.

The connection method is not particularly limited, and it can be connected by a conventionally known flip chip bonder. For example, the conductive material is melted while contacting and pressing the bump electrode 43 such as the bump formed on the first semiconductor element 41 with the conductive material (solder or the like) for bonding the connection pad of the adherend 1 The electrical conduction between the first semiconductor element 41 and the adherend 1 can be ensured, and the first semiconductor element 41 can be fixed to the adherend 1 (flip-chip bonding). Usually, the heating conditions at the time of flip chip bonding are 240 to 300 ° C, and the pressurization conditions are 0.5 to 490 N.

The material for forming the bump as the bump electrode 43 is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal material. Solder (alloy) such as tin-zinc-bismuth metal material, gold metal material, or copper metal material.

As the underfill material 44, a previously known liquid or film-like underfill material can be used.

(2nd fixing step)

In the second fixing step, the first semiconductor element 41 is embedded by the embedding adhesive film 22, and the second semiconductor element 12 different from the first semiconductor element 41 is fixed to the above. The adherend 1 (see Fig. 4B). The conditions in this step are the same as those in the second fixing step in the first embodiment. In the present embodiment, since the embedding adhesive film 22 having a specific melt viscosity is used, it is possible to prevent the film from protruding from the second semiconductor element 12 and to improve the adhesion of the embedding adhesive film 22 to the adherend 1 Sex, to prevent the occurrence of voids.

The embedding adhesive film 22 has a thickness T that is thicker than the thickness T _{1 of} the first semiconductor element 41 described above. In the present embodiment, since the adherend 1 and the first semiconductor element 41 are connected by a crystal, the difference between the thickness T and the thickness T ₁ is preferably 10 μm or more and 200 μm or less. The lower limit of the difference between the thickness T and the thickness T ₁ is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more. Further, the upper limit of the difference between the thickness T and the thickness T ₁ is preferably 200 μm or less, more preferably 150 μm or less, still more preferably 100 μm or less. With such a configuration, the entire semiconductor device can be made thinner, and the first semiconductor element 41 can be prevented from coming into contact with the second semiconductor element 12, and the entire first semiconductor element 41 can be embedded in the interior of the embedding film 22. The fixing of the first semiconductor element 41 as the controller to the adherend 1 (that is, the fixing on the lowermost layer having the shortest communication path length) is realized.

The thickness T of the buried adhesive film 22 may be appropriately set in consideration of the thickness T _{1 of the} first semiconductor element 41 and the height of the bump electrode so as to be able to embed the first semiconductor element 41, and the lower limit thereof is preferably 50 μm or more. It is 60 μm or more, and more preferably 70 μm or more. On the other hand, the upper limit of the thickness T is preferably 250 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less. By making the embedding adhesive film 22 relatively thick as described above, the thickness of the normal controller can be substantially covered, and the first semiconductor element 41 can be easily embedded in the embedding adhesive film 22.

Then, as in the first embodiment, by passing through the second semiconductor element 12 The third fixing step (see FIG. 4C) of fixing the third semiconductor element 13 of the same or different type to the second semiconductor element 12, and the second semiconductor element 12 and the third semiconductor element 13 are electrically connected by the bonding wires 32. The second bonding step (see FIG. 4D) of the connection can be performed on the lowermost layer controller and the semiconductor device 200 in which a plurality of semiconductor elements are stacked.

(Other embodiments)

In the first embodiment, the second semiconductor element 12 is formed through a dicing step and a picking step using a diced die. Further, the first semiconductor element 11 can also be produced by using a diced die-bonding film in the same manner. In this case, the semiconductor wafer for cutting out the first semiconductor element 11 is separately prepared, and then the first semiconductor element 11 is fixed to the object to be bonded 1 through the wafer bonding step, the dicing step, and the pick-up step. . The third semiconductor element 13 and the semiconductor element laminated on the upper layer can also be fabricated in the same manner.

When the semiconductor element is three-dimensionally mounted on the substrate, a buffer coating film may be formed on the side of the semiconductor element on which the circuit is formed. Examples of the buffer coating film include a tantalum nitride film or a heat resistant resin such as a polyimide resin.

In each of the embodiments, the wire bonding step is performed every time the semiconductor element after the second semiconductor element is laminated. However, the wire bonding step may be performed once after stacking a plurality of semiconductor elements. In addition, since the first semiconductor element is embedded in the adhesive film for embedding, it cannot be used as a target for one-time wire bonding.

The aspect of the flip chip connection is not limited to the connection using the bumps as the bump electrodes described in the second embodiment, and the connection by the conductive adhesive composition or the use of the combined bumps and conductivity may be employed. The connection of the protrusion structure and the like of the composition of the subsequent composition. Further, in the present invention, as long as the circuit surface of the first semiconductor element and the substrate to be bonded are attached to face down, the connection pattern of the bump electrode or the protrusion structure is called a flip chip connection. As a conductive adhesive composition, it is possible to use a conductive filler such as gold, silver or copper in a thermosetting resin such as an epoxy resin. Know the conductive paste and so on. When the conductive adhesive composition is used, the first semiconductor element can be fixed by performing a heat hardening treatment at 80 to 150 ° C for about 0.5 to 10 hours after the first semiconductor element is mounted on the object to be bonded.

[Examples]

Hereinafter, preferred embodiments of the present invention will be exemplarily described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the present invention, and are merely illustrative examples, unless otherwise specified.

[Examples 1 to 2 and Comparative Example 1]

(following the production of the film)

The acrylic resin A to C, the epoxy resins A and B, the phenol resin, the ceria, and the thermosetting catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 1 to prepare an adhesive composition having a concentration of 40 to 50% by weight. Solution.

Further, the details of the abbreviations and components in Table 1 below are as follows.

Carboxyl group-containing acrylic resin A: manufactured by Nagase ChemteX, SG-70L (acid value: 5 mg KOH/g)

Carboxyl group-containing acrylic resin B: manufactured by Nagase ChemteX, WS-023 KE30 (acid value: 20 mg KOH/g)

Carboxyl group-containing acrylic resin C: manufactured by Nagase ChemteX, SG-280 KE23 (acid value: 30 mg KOH/g)

Epoxy Resin A: Manufactured by Dongdu Chemical Co., Ltd., KI-3000

Epoxy resin B: manufactured by Mitsubishi Chemical Corporation, JER YL980

Phenol resin: manufactured by Minghe Chemical Co., Ltd., MEH-7800H

Ceria: Made by Admatechs Co., Ltd., SE-2050MC

Thermal curing catalyst: manufactured by Beixing Chemical Co., Ltd., TPP-K

The prepared adhesive composition solution was applied to a release film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to polyfluorination release treatment as a release liner. Then, it was dried at 130 ° C for 2 minutes to prepare an adhesive coating film having a thickness of 40 μm. Further, three sheets of the formed adhesive film were laminated under the following lamination conditions to prepare a film having a thickness of 120 μm.

<Lamination conditions>

Laminator device: roll laminator

Laminating speed: 10mm/min

Laminating pressure: 0.15MPa

Laminator temperature: 60 ° C

(Measurement of dielectric constant and dielectric loss tangent after thermosetting)

The produced film was heated at 130 ° C for 4 hours, and further heated at 175 ° C for 1 hour to be thermally cured. The hardened sample was sandwiched between the copper foil and the electrode, and the dielectric at 1 MHz was measured by the following apparatus. Electrical constant and dielectric loss tangent. Three samples were prepared in the measurement system, and the average of the measured values of the three samples was taken as the dielectric constant. Further, the measurement was carried out under the following conditions in accordance with JIS K 6911.

<Measurement conditions>

Determination method: volume method (device: using Agilent Technologies 4294A precision impedance analyzer)

Electrode composition: 12.1mm , 0.5mm thick aluminum plate

Counter electrode: 3oz copper plate

Measurement environment: 23±1°C, 52±1% RH

(Production of the crystal film)

As the substrate, a polyethylene terephthalate film (PET film) having a thickness of 50 μm was prepared.

86.4 parts of 2-ethylhexyl acrylate (hereinafter also referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter also referred to as "HEA") were placed in a reaction vessel equipped with a cooling tube, a nitrogen gas introduction tube, a thermometer, and a stirring device. ") 13.6 parts, 0.2 parts of benzamidine peroxide and toluene 65 The mixture was subjected to polymerization treatment at 61 ° C for 6 hours in a nitrogen gas stream to obtain an acrylic polymer A.

14.6 parts of 2-methylpropenyloxyethyl isocyanate (hereinafter also referred to as "MOI") was added to the acrylic polymer A, and an addition reaction was carried out at 50 ° C for 48 hours in an air stream to obtain acrylic acid. Is a polymer A'.

Then, 8 parts of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name "IRGACURE 651", Ciba Specialty) were added to 100 parts of the acrylic polymer A'. 5 parts, manufactured by Chemicals, to obtain a solution of the adhesive composition.

The obtained adhesive composition solution was applied onto the prepared substrate and dried to form an adhesive layer having a thickness of 30 μm, whereby a diced film was obtained.

(Production of a crystal-cutting film)

The adhesive film produced in each of the examples and the comparative examples was transferred onto the adhesive layer of the above-mentioned dicing film to obtain a crystal cut adhesive film. Further, the conditions for lamination are as follows.

<Lamination conditions>

Laminator device: roll laminator

Laminating speed: 10mm/min

Laminating pressure: 0.15MPa

Laminator temperature: 30 ° C

(production of controller mounting substrate)

The adhesive film of the composition of Example 1 was produced at a thickness of 10 μm, and was used as a film for the controller wafer. This was attached to a controller wafer of 2 mm square and 50 μm in thickness at a temperature of 40 °C. Further, the semiconductor wafer is attached to a BGA (Ball Grid Array) substrate via a bonding film. The conditions at this time were set to a temperature of 120 ° C, a pressure of 0.1 MPa, and 1 second. Further, the BGA substrate with the controller wafer was heat-treated at 130 ° C for 4 hours in a dryer to thermally cure the adhesive film.

Then, the controller wafer was wire-bonded under the following conditions using a wire bonding device (Nippon Co., Ltd., trade name "UTC-1000"). Thereby, a controller mounting substrate on which a controller wafer is mounted on a BGA substrate is obtained.

<wire bonding conditions>

Temperature: 175 ° C

Au-wire: 23μm

S-LEVEL: 50μm

S-SPEED: 10mm/s

TIME: 15ms

US-POWER: 100

FORCE: 20gf

S-FORCE: 15gf

Wire spacing: 100μm

Wire loop height: 30μm

(Production of semiconductor device)

The above-mentioned diced die-bonding film was separately used, and after the dicing of the semiconductor wafer was actually performed in accordance with the following points, the semiconductor device was fabricated by picking up the semiconductor wafer, and the corrosion resistance at this time was evaluated.

The dicing die-bonding films of the examples and the comparative examples were bonded to the surface of the wafer opposite to the circuit surface on the side of the wafer with one side of the bump. As a single-sided bumped wafer, the following is used. Further, the bonding conditions are as follows.

<Single wafer with bumps on one side>

矽 Wafer thickness: 100μm

Low dielectric material layer material: SiN film

Thickness of low dielectric material layer: 0.3μm

Height of the bump: 60μm

The distance between the bumps: 150μm

Material of the bump: solder

<Finishing conditions>

Laminating device: DR-3000III (made by Nitto Seiki Co., Ltd.)

Laminating speed: 10mm/s

Laminating pressure: 0.15MPa

Laminator temperature: 60 ° C

After the bonding, the crystal was cut according to the following conditions. Further, the dicing system was completely cut so as to have a wafer size of 10 mm square.

<Cutting conditions>

Crystal cutting device: trade name "DFD-6361", manufactured by DISCO

Cleavage ring: "2-8-1" (manufactured by DISCO)

Cleavation speed: 30mm/sec

Cutting crystal blade:

Z1: "203O-SE 27HCDD" manufactured by DISCO

Z2: "203O-SE 27HCBB" manufactured by DISCO

Cutting edge rotation number:

Z1: 40,000 rpm

Z2: 45,000 rpm

Cutting method: step cut

Wafer wafer size: 10.0mm square

Then, ultraviolet rays are irradiated from the substrate side to harden the adhesive layer. For the ultraviolet irradiation, an ultraviolet irradiation device (product name: UM810, manufacturer: manufactured by Nitto Seiki Co., Ltd.) was used, and the ultraviolet radiation amount was set to 400 mJ/cm ² .

Then, the laminate of the adhesive film and the semiconductor wafer is picked up by the top of the substrate from the side of each of the dicing films. The pickup conditions are as follows.

<Picking conditions>

Bonding device: manufactured by Shinkawa Co., Ltd., device name: SPA-300

Number of needles: 9

Needle top amount: 350μm (0.35mm)

Needle jacking speed: 5mm / sec

Adsorption retention time: 80ms

Then, the controller wafer of the controller mounting substrate is embedded by the adhesive film of the picked-up laminated body, and the semiconductor wafer is attached to the BGA substrate. The conditions at this time were set to 120 ° C, a pressure of 0.1 MPa, and 2 seconds. Further, the BGA substrate having the semiconductor wafer was heat-treated at 130 ° C for 4 hours in a dryer to thermally cure the adhesive film to fabricate a semiconductor device.

(migration test)

The migration was evaluated by measuring the inter-wiring resistance after attaching the bonding film using the comb-shaped copper wiring substrate 80 shown in FIG. 5. The migration phenomenon is caused by a potential difference between the copper wirings, a contact between the copper wiring and the bonding film, and the like, and a copper wiring and a component (a polymer component having a polar functional group or an organic solvent component) in the adhesive film are generated. The chemical reaction forms a copper component of the copper wiring to cause corrosion or dissolution. The adhesive film 82 was bonded to the copper wiring 81 having a wiring line distance of 20 μm and a wiring width of 20 μm, heated at 130 ° C for 4 hours, and further heated at 175 ° C for 5 hours to be thermally cured. Then, a voltage of 5 V was applied between the terminals in an environment of 130 ° C and 85% RH, and the volume resistance of the film 82 was measured. When the volume resistance after 196 hours was 1.0 × 10 ⁶ or more, the evaluation was "○". If it is less than 1.0×10 ^{6 ,} it is evaluated as “×”.

In the semiconductor device fabricated using the adhesive film of the example, it is understood that the corrosion of each member to be buried by the film is suppressed, and the insulation between the copper wirings is maintained, whereby a highly reliable semiconductor device can be manufactured. On the other hand, in Comparative Example 1, it was found that corrosion and migration occurred, and the reliability of the semiconductor device was lowered. This is considered to be because the acrylic resin contained in the adhesive film of Comparative Example 1 has less crosslinkable functional groups, and the polarization of the acrylic resin is generated to increase the dielectric constant.

1‧‧‧Exposed body

11‧‧‧1st semiconductor component

12‧‧‧2nd semiconductor component

21‧‧‧1st film

22‧‧‧Next film

31‧‧‧Connected wire

T‧‧‧The thickness of the film

T ₁ ‧‧‧The thickness of the first semiconductor component

Claims (10)

An adhesive film for embedding a first semiconductor element fixed on a substrate to be bonded, and fixing a second semiconductor element different from the first semiconductor element to a member to be bonded, and thermally curing at 1 MHz The lower dielectric constant is 4.00 or less. The adhesive film of claim 1, wherein the dielectric loss tangent at 1 MHz after heat hardening is 0.06 or less. Such as the film of claim 1, wherein the melt viscosity at 120 ° C and a shear rate of 50 s ^-1 is 50 Pa. s above and 3000Pa. s below. The film according to claim 1 has a storage elastic modulus at 25 ° C of 10 MPa or more and 10000 MPa or less before thermal curing. The adhesive film of claim 1, which comprises an inorganic filler, and the inorganic filler is contained in an amount of 10 to 80% by weight. A dicing die-bonding film comprising: a dicing film having a substrate and an adhesive layer formed on the substrate; and an adhesive film according to any one of claims 1 to 5, laminated to the adhesion On the agent layer. A method of manufacturing a semiconductor device, comprising: a substrate preparation step of preparing a substrate to which a first semiconductor element is fixed; and a bonding step of bonding a film of a dicing die film as claimed in claim 6 Bonding to a semiconductor wafer; a dicing step of dicing the semiconductor wafer and the bonding film to form a second semiconductor element; and a picking step of picking up the second semiconductor element together with the bonding film; In the fixing step, the first semiconductor element fixed to the adherend is embedded by the adhesive film picked up together with the second semiconductor element, and the second semiconductor element is fixed to the adherend. The method of manufacturing a semiconductor device according to claim 7, wherein the adhesive film has a thickness T that is thicker than a thickness T _{1 of} the first semiconductor element, and the adherend is bonded to the first semiconductor element by a wire bonding and the thickness The difference between T and the above thickness T ₁ is 40 μm or more and 260 μm or less. The method of manufacturing a semiconductor device according to claim 7, wherein the adhesive film has a thickness T that is thicker than a thickness T ₁ of the first semiconductor element, and the adherend is a crystal-chip bonded to the first semiconductor element, and the thickness is the thickness The difference between T and the above thickness T ₁ is 10 μm or more and 200 μm or less. A semiconductor device obtained by the method of manufacturing a semiconductor device according to any one of claims 7 to 9.