JP2006203220A5 - - Google Patents
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- Publication number
- JP2006203220A5 JP2006203220A5 JP2006037358A JP2006037358A JP2006203220A5 JP 2006203220 A5 JP2006203220 A5 JP 2006203220A5 JP 2006037358 A JP2006037358 A JP 2006037358A JP 2006037358 A JP2006037358 A JP 2006037358A JP 2006203220 A5 JP2006203220 A5 JP 2006203220A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- nitride
- oxide
- peeled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 91
- 229910052751 metal Inorganic materials 0.000 claims 16
- 239000002184 metal Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 150000004767 nitrides Chemical class 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 239000010408 film Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 239000002356 single layer Substances 0.000 claims 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- -1 tungsten nitride Chemical class 0.000 claims 3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006037358A JP4527068B2 (ja) | 2001-07-16 | 2006-02-15 | 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001216018 | 2001-07-16 | ||
| JP2001299620 | 2001-09-28 | ||
| JP2006037358A JP4527068B2 (ja) | 2001-07-16 | 2006-02-15 | 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002207536A Division JP4027740B2 (ja) | 2001-07-16 | 2002-07-16 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006203220A JP2006203220A (ja) | 2006-08-03 |
| JP2006203220A5 true JP2006203220A5 (https=) | 2010-02-04 |
| JP4527068B2 JP4527068B2 (ja) | 2010-08-18 |
Family
ID=36960865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006037358A Expired - Fee Related JP4527068B2 (ja) | 2001-07-16 | 2006-02-15 | 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4527068B2 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI433306B (zh) | 2006-09-29 | 2014-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US7968382B2 (en) * | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| KR20090017014A (ko) | 2007-08-13 | 2009-02-18 | 삼성전자주식회사 | 가요성 표시 장치의 제조 방법 |
| JP5368013B2 (ja) * | 2008-06-24 | 2013-12-18 | 共同印刷株式会社 | フレキシブル有機elディスプレイの製造方法 |
| JP5368014B2 (ja) * | 2008-06-24 | 2013-12-18 | 共同印刷株式会社 | フレキシブル有機elディスプレイの製造方法 |
| JP5131128B2 (ja) * | 2008-09-30 | 2013-01-30 | 大日本印刷株式会社 | 可撓性基板、可撓性基板の製造方法、及び製品 |
| KR101149433B1 (ko) * | 2009-08-28 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
| US9093397B2 (en) | 2011-07-06 | 2015-07-28 | Panasonic Corporation | Flexible device manufacturing method and flexible device |
| WO2013179881A1 (ja) * | 2012-05-29 | 2013-12-05 | 旭硝子株式会社 | ガラス積層体および電子デバイスの製造方法 |
| CN104451612A (zh) * | 2014-12-31 | 2015-03-25 | 长春迪高实业有限公司 | 透明导电氧化物膜及其制备方法 |
| JP6899477B2 (ja) * | 2019-07-26 | 2021-07-07 | 堺ディスプレイプロダクト株式会社 | フレキシブルoledデバイス、その製造方法及び支持基板 |
| WO2024236905A1 (ja) * | 2023-05-15 | 2024-11-21 | 株式会社ジャパンディスプレイ | 電波反射板 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142570A (ja) * | 1993-11-12 | 1995-06-02 | Ube Ind Ltd | 複合半導体基板及びその製造方法 |
| JP4619461B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| KR100342575B1 (ko) * | 1996-11-11 | 2002-07-04 | 우츠미 오사무 | 기재의 평탄화 방법, 피막 부착 기재 및 반도체 장치의 제조방법 |
| JPH1187799A (ja) * | 1997-09-12 | 1999-03-30 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子とその製造方法 |
| JPH11135882A (ja) * | 1997-10-28 | 1999-05-21 | Sharp Corp | 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子 |
| JP4009923B2 (ja) * | 1999-09-30 | 2007-11-21 | セイコーエプソン株式会社 | Elパネル |
| JP2001166301A (ja) * | 1999-12-06 | 2001-06-22 | Seiko Epson Corp | バックライト内蔵型液晶表示装置及びその製造方法 |
| JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
-
2006
- 2006-02-15 JP JP2006037358A patent/JP4527068B2/ja not_active Expired - Fee Related
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