JP2004047975A5 - - Google Patents
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- Publication number
- JP2004047975A5 JP2004047975A5 JP2003137073A JP2003137073A JP2004047975A5 JP 2004047975 A5 JP2004047975 A5 JP 2004047975A5 JP 2003137073 A JP2003137073 A JP 2003137073A JP 2003137073 A JP2003137073 A JP 2003137073A JP 2004047975 A5 JP2004047975 A5 JP 2004047975A5
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- JP
- Japan
- Prior art keywords
- peeled
- peeling
- semiconductor device
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 37
- 239000010410 layer Substances 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000000853 adhesive Substances 0.000 claims 25
- 230000001070 adhesive effect Effects 0.000 claims 25
- 238000004519 manufacturing process Methods 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 12
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims 11
- 239000010408 film Substances 0.000 claims 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000004033 plastic Substances 0.000 claims 6
- 239000002356 single layer Substances 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- 229910052779 Neodymium Inorganic materials 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 239000011651 chromium Substances 0.000 claims 4
- 229910017052 cobalt Inorganic materials 0.000 claims 4
- 239000010941 cobalt Substances 0.000 claims 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 229910052741 iridium Inorganic materials 0.000 claims 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052762 osmium Inorganic materials 0.000 claims 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 4
- 229910052703 rhodium Inorganic materials 0.000 claims 4
- 239000010948 rhodium Substances 0.000 claims 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 4
- 238000005096 rolling process Methods 0.000 claims 4
- 229910052707 ruthenium Inorganic materials 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 239000004925 Acrylic resin Substances 0.000 claims 2
- 229920000178 Acrylic resin Polymers 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 229920002050 silicone resin Polymers 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- -1 nitride compound Chemical class 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 238000013518 transcription Methods 0.000 claims 1
- 230000035897 transcription Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003137073A JP2004047975A (ja) | 2002-05-17 | 2003-05-15 | 積層体の転写方法及び半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002143797 | 2002-05-17 | ||
| JP2003137073A JP2004047975A (ja) | 2002-05-17 | 2003-05-15 | 積層体の転写方法及び半導体装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004265298A Division JP4757469B2 (ja) | 2002-05-17 | 2004-09-13 | 半導体装置の作製方法 |
| JP2009092389A Division JP5094776B2 (ja) | 2002-05-17 | 2009-04-06 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004047975A JP2004047975A (ja) | 2004-02-12 |
| JP2004047975A5 true JP2004047975A5 (https=) | 2005-06-16 |
Family
ID=31719506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003137073A Withdrawn JP2004047975A (ja) | 2002-05-17 | 2003-05-15 | 積層体の転写方法及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004047975A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8872330B2 (en) | 2006-08-04 | 2014-10-28 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
| US9054141B2 (en) | 2006-09-29 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005311295A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR101197084B1 (ko) | 2004-05-21 | 2012-11-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| JP2006013462A (ja) * | 2004-05-21 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP5072196B2 (ja) * | 2004-06-14 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2005122280A1 (en) | 2004-06-14 | 2005-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and communication system |
| DE102005055293A1 (de) * | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
| WO2007018028A1 (ja) * | 2005-08-09 | 2007-02-15 | Asahi Glass Company, Limited | 薄板ガラス積層体及び薄板ガラス積層体を用いた表示装置の製造方法 |
| KR101255301B1 (ko) * | 2006-02-13 | 2013-04-15 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이의 제조 방법 |
| DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2010026938A1 (ja) * | 2008-09-08 | 2010-03-11 | 電気化学工業株式会社 | 半導体製品の製造方法 |
| JP5586920B2 (ja) | 2008-11-20 | 2014-09-10 | 株式会社半導体エネルギー研究所 | フレキシブル半導体装置の作製方法 |
| KR102369012B1 (ko) | 2009-09-16 | 2022-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
| JP5770542B2 (ja) * | 2011-06-14 | 2015-08-26 | キヤノン・コンポーネンツ株式会社 | 半導体装置の製造方法 |
| JP6244183B2 (ja) * | 2013-11-20 | 2017-12-06 | 東京応化工業株式会社 | 処理方法 |
| US10115747B2 (en) * | 2015-01-06 | 2018-10-30 | Sharp Kabushiki Kaisha | Method of producing component board |
| SG10201913156WA (en) * | 2017-07-14 | 2020-02-27 | Shinetsu Chemical Co | Device substrate with high thermal conductivity and method of manufacturing the same |
| CN115803122B (zh) * | 2020-07-31 | 2023-12-01 | 东丽株式会社 | 层叠体的制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JPH10150007A (ja) * | 1996-11-18 | 1998-06-02 | Toyo Chem Co Ltd | 半導体ウエハ固定用シート |
| JP3878288B2 (ja) * | 1997-07-28 | 2007-02-07 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JP3406207B2 (ja) * | 1997-11-12 | 2003-05-12 | シャープ株式会社 | 表示用トランジスタアレイパネルの形成方法 |
| JP3804349B2 (ja) * | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
| JP3994593B2 (ja) * | 1999-08-18 | 2007-10-24 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
| JP2002217391A (ja) * | 2001-01-23 | 2002-08-02 | Seiko Epson Corp | 積層体の製造方法及び半導体装置 |
-
2003
- 2003-05-15 JP JP2003137073A patent/JP2004047975A/ja not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8872330B2 (en) | 2006-08-04 | 2014-10-28 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor component and component assembly |
| US9054141B2 (en) | 2006-09-29 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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