JP2006196879A5 - - Google Patents

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Publication number
JP2006196879A5
JP2006196879A5 JP2005355668A JP2005355668A JP2006196879A5 JP 2006196879 A5 JP2006196879 A5 JP 2006196879A5 JP 2005355668 A JP2005355668 A JP 2005355668A JP 2005355668 A JP2005355668 A JP 2005355668A JP 2006196879 A5 JP2006196879 A5 JP 2006196879A5
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JP
Japan
Prior art keywords
layer
substance
semiconductor device
manufacturing
rough surface
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Application number
JP2005355668A
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English (en)
Japanese (ja)
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JP4700484B2 (ja
JP2006196879A (ja
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Priority to JP2005355668A priority Critical patent/JP4700484B2/ja
Priority claimed from JP2005355668A external-priority patent/JP4700484B2/ja
Publication of JP2006196879A publication Critical patent/JP2006196879A/ja
Publication of JP2006196879A5 publication Critical patent/JP2006196879A5/ja
Application granted granted Critical
Publication of JP4700484B2 publication Critical patent/JP4700484B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2005355668A 2004-12-17 2005-12-09 半導体装置の作製方法 Expired - Fee Related JP4700484B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005355668A JP4700484B2 (ja) 2004-12-17 2005-12-09 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004366430 2004-12-17
JP2004366430 2004-12-17
JP2005355668A JP4700484B2 (ja) 2004-12-17 2005-12-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006196879A JP2006196879A (ja) 2006-07-27
JP2006196879A5 true JP2006196879A5 (enrdf_load_stackoverflow) 2009-01-15
JP4700484B2 JP4700484B2 (ja) 2011-06-15

Family

ID=36802663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005355668A Expired - Fee Related JP4700484B2 (ja) 2004-12-17 2005-12-09 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4700484B2 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5110785B2 (ja) * 2004-10-08 2012-12-26 株式会社半導体エネルギー研究所 表示装置の作製方法
US8133546B2 (en) * 2006-07-31 2012-03-13 Nippon Soda Co., Ltd. Method for producing organic thin film by using film physical property improving process
JP5371240B2 (ja) * 2006-12-27 2013-12-18 株式会社半導体エネルギー研究所 配線の作製方法
JP5332145B2 (ja) * 2007-07-18 2013-11-06 株式会社リコー 積層構造体、電子素子、電子素子アレイ及び表示装置
JP2009026900A (ja) * 2007-07-18 2009-02-05 Ricoh Co Ltd 積層構造体、電子素子及びそれらの製造方法、表示装置
JP2009026901A (ja) * 2007-07-18 2009-02-05 Ricoh Co Ltd 積層構造体、電子素子、電子素子アレイ及び表示装置
JP2009038185A (ja) * 2007-08-01 2009-02-19 Konica Minolta Holdings Inc 導電膜パターンの形成方法、および配線基板、表示装置
JP2009054949A (ja) * 2007-08-29 2009-03-12 Seiko Instruments Inc 金属配線形成方法
JP2010157532A (ja) * 2008-12-26 2010-07-15 Hitachi Ltd 半導体装置の製造方法および半導体装置
KR101107158B1 (ko) * 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101107160B1 (ko) 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
JP2013105797A (ja) * 2011-11-11 2013-05-30 Fujifilm Corp パターン形成方法
JP2014107394A (ja) * 2012-11-27 2014-06-09 Toyota Motor Corp 金属化フィルムコンデンサ
KR101605884B1 (ko) 2014-04-21 2016-03-24 한국과학기술원 레이저를 이용한 박막 트랜지스터 제조 방법
JP7145243B2 (ja) * 2019-02-01 2022-09-30 富士フイルム株式会社 有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3870562B2 (ja) * 1998-07-16 2007-01-17 セイコーエプソン株式会社 パターン形成方法、およびパターン形成基板の製造方法
US6734029B2 (en) * 2000-06-30 2004-05-11 Seiko Epson Corporation Method for forming conductive film pattern, and electro-optical device and electronic apparatus
JP2003076004A (ja) * 2001-09-04 2003-03-14 Fuji Photo Film Co Ltd パターン形成方法
JP2004200365A (ja) * 2002-12-18 2004-07-15 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法

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