JP2006194875A - Misfetの寿命予測方法 - Google Patents
Misfetの寿命予測方法 Download PDFInfo
- Publication number
- JP2006194875A JP2006194875A JP2005374490A JP2005374490A JP2006194875A JP 2006194875 A JP2006194875 A JP 2006194875A JP 2005374490 A JP2005374490 A JP 2005374490A JP 2005374490 A JP2005374490 A JP 2005374490A JP 2006194875 A JP2006194875 A JP 2006194875A
- Authority
- JP
- Japan
- Prior art keywords
- lifetime
- misfet
- voltage
- load
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 230000005669 field effect Effects 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 title description 2
- 239000002184 metal Substances 0.000 title description 2
- 239000012212 insulator Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims description 12
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002707 nanocrystalline material Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 28
- 238000006731 degradation reaction Methods 0.000 abstract description 28
- 230000000694 effects Effects 0.000 abstract description 7
- 238000007405 data analysis Methods 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000010998 test method Methods 0.000 abstract description 3
- 239000003989 dielectric material Substances 0.000 description 20
- 238000005259 measurement Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- -1 Al 2 O 3 Chemical compound 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000005264 electron capture Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical class [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000611 regression analysis Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
【解決手段】本発明は、集積回路寿命におけるホットキャリア注入の効果を決定するためのMISFETの試験方法を提供する。本方法は、ドレイン電圧を前記負荷電圧に等しい値に維持する間中、高誘電率誘電体を有するゲートへ正の負荷電圧を印加する。通常の動作電圧よりも大きい負荷電圧の使用が、集積回路の故障及び劣化を加速させる。スレッショルド電圧,トランスコンダクタンス,リニアドレイン電流,飽和ドレイン電流などの電気的パラメータを観測する。観測された電気的パラメータにおけるシフトがデバイス故障を示す。ゲート負荷電圧に対する被加速デバイス寿命の対数をプロットすることによるデータ解析が行われる。動作条件下でのデバイス寿命は、所定のデバイス動作電圧に関するプロットを基に推定することにより予測される。
【選択図】図1
Description
Claims (13)
- 高誘電率ゲート誘電体を備えたMISFETの寿命予測方法であって、前記MISFETのゲートへ負荷バイアスを印加し、前記MISFETのドレイン電圧を前記負荷バイアスより大きい又は等しい値に維持し、前記負荷バイアスが予め選択された電気的な前記MISFETのパラメータシフトを引き起こすために必要とされた累積時間から被加速デバイス寿命を測定し、前記被加速デバイス寿命と前記負荷バイアスとの間の関数関係を導き出し、前記被加速デバイス寿命と前記負荷バイアスとの間の前記関数関係へ前記MISFETの動作電圧を入力すると共に前記MISFETの前記動作電圧に対応する時間を推定することにより寿命を予測することを特徴とするMISFETの寿命予測方法。
- 前記ドレイン電圧は前記負荷電圧に等しいものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記負荷電圧は正の電圧であることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 負荷電圧に対する前記被加速デバイス寿命の対数をプロットすることから前記関数関係を導き出すものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- y軸が被加速デバイス寿命の対数を表し、x軸が正のゲート負荷電圧を表すものであって、前記x軸に対する前記y軸をグラフ化することから前記関数関係を導き出すものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記高誘電率ゲート誘電体は、約7より十分大きいk値を有するものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記高誘電率ゲート誘電体は、ハフニウム系材料からなるものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記高誘電率ゲート誘電体は、アルミニウム系材料からなるものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記高誘電率ゲート誘電体は、ナノ結晶材料からなるものであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記予め選択された電気的なMISFETのパラメータシフトは、スレッショルド電圧におけるシフトであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記予め選択された電気的なMISFETのパラメータシフトは、リニアドレイン電流におけるシフトであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 前記予め選択された電気的なMISFETのパラメータシフトは、飽和ドレイン電流におけるシフトであることを特徴とする請求項1記載のMISFETの寿命予測方法。
- 負荷周期の間、当該高誘電率半導体デバイスの温度を、約85℃と約125℃との間へ上昇させることを特徴とする請求項1記載のMISFETの寿命予測方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64257405P | 2005-01-10 | 2005-01-10 | |
US11/077,463 US7106088B2 (en) | 2005-01-10 | 2005-03-10 | Method of predicting high-k semiconductor device lifetime |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006194875A true JP2006194875A (ja) | 2006-07-27 |
Family
ID=36844517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005374490A Pending JP2006194875A (ja) | 2005-01-10 | 2005-12-27 | Misfetの寿命予測方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7106088B2 (ja) |
JP (1) | JP2006194875A (ja) |
KR (1) | KR100711556B1 (ja) |
CN (1) | CN100412557C (ja) |
SG (1) | SG124324A1 (ja) |
TW (1) | TWI267950B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014203467A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | メモリシステム、制御システムおよび寿命予測方法 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100695150B1 (ko) * | 2005-05-12 | 2007-03-14 | 삼성전자주식회사 | 금속-절연체 변환 물질을 이용한 트랜지스터 및 그 제조방법 |
US7340360B1 (en) * | 2006-02-08 | 2008-03-04 | Advanced Micro Devices, Inc. | Method for determining projected lifetime of semiconductor devices with analytical extension of stress voltage window by scaling of oxide thickness |
US7853851B1 (en) * | 2006-11-06 | 2010-12-14 | Oracle America, Inc. | Method and apparatus for detecting degradation in an integrated circuit chip |
US8362793B2 (en) * | 2006-11-07 | 2013-01-29 | Apple Inc. | Circuit boards including removable test point portions and configurable testing platforms |
US7616021B2 (en) * | 2007-01-18 | 2009-11-10 | Advanced Micro Devices, Inc. | Method and device for determining an operational lifetime of an integrated circuit device |
FR2912257B1 (fr) | 2007-02-02 | 2009-03-06 | Commissariat Energie Atomique | Procede et circuit pour ameliorer la duree de vie des transistors a effet de champ |
US7656182B2 (en) * | 2007-03-21 | 2010-02-02 | International Business Machines Corporation | Testing method using a scalable parametric measurement macro |
US7495519B2 (en) * | 2007-04-30 | 2009-02-24 | International Business Machines Corporation | System and method for monitoring reliability of a digital system |
KR101356425B1 (ko) * | 2007-09-20 | 2014-01-28 | 삼성전자주식회사 | 모스 트랜지스터의 열화도 추정 방법 및 회로 특성 열화도추정 방법 |
US7642864B2 (en) * | 2008-01-29 | 2010-01-05 | International Business Machines Corporation | Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect |
US7898277B2 (en) * | 2008-12-24 | 2011-03-01 | Agere Systems Inc. | Hot-electronic injection testing of transistors on a wafer |
US8362794B2 (en) * | 2009-07-23 | 2013-01-29 | International Business Machines Corporation | Method and system for assessing reliability of integrated circuit |
CN102508146B (zh) * | 2011-11-25 | 2016-01-27 | 上海集成电路研发中心有限公司 | 确定热载流子注入应力测试条件的方法 |
CN102692593A (zh) * | 2012-06-06 | 2012-09-26 | 复旦大学 | 一种提高快速Id-Vg测试精度的测试系统 |
CN103576066B (zh) * | 2012-07-26 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件热载流子寿命的测量方法 |
US8775994B2 (en) * | 2012-10-03 | 2014-07-08 | Lsi Corporation | Using entire area of chip in TDDB checking |
CN103852700B (zh) * | 2012-11-29 | 2016-08-03 | 无锡华润上华半导体有限公司 | 一种ldmos器件热载流子注入效应的测试方法 |
CN107293501B (zh) | 2016-03-31 | 2019-12-31 | 中芯国际集成电路制造(上海)有限公司 | 用于预测芯片高温操作寿命的方法及装置 |
US9866221B2 (en) | 2016-05-24 | 2018-01-09 | International Business Machines Corporation | Test circuit to isolate HCI degradation |
CN117031237B (zh) * | 2023-10-08 | 2023-12-15 | 江苏摩派半导体有限公司 | 半导体器件使用寿命测试方法及系统 |
CN117269712B (zh) * | 2023-11-22 | 2024-01-30 | 墨研计算科学(南京)有限公司 | 晶体管热载流子注入寿命的预估方法、装置、设备及介质 |
CN117669221A (zh) * | 2023-12-08 | 2024-03-08 | 重庆理工大学 | 一种等效加速预测固体电介质寿命的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215667A (ja) * | 1988-07-04 | 1990-01-19 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
JP2000266803A (ja) * | 1999-03-16 | 2000-09-29 | Matsushita Electronics Industry Corp | 半導体装置の評価方法 |
JP2001077111A (ja) * | 1999-07-19 | 2001-03-23 | Sharp Corp | アルミニウムをドープしたジルコニウム誘電体膜のトランジスタ構造およびその堆積方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6312168A (ja) | 1986-07-03 | 1988-01-19 | Oki Electric Ind Co Ltd | Lddmis型電界効果トランジスタ |
US5028554A (en) | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US4816753A (en) * | 1987-05-21 | 1989-03-28 | Advanced Research And Applications Corporation | Method for reliability testing of integrated circuits |
US5600578A (en) | 1993-08-02 | 1997-02-04 | Advanced Micro Devices, Inc. | Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results |
JP2736501B2 (ja) * | 1993-09-28 | 1998-04-02 | 三菱電機株式会社 | Mos型トランジスタのホットキャリア劣化のシミュレーション方法 |
JP3380054B2 (ja) * | 1994-08-19 | 2003-02-24 | 三菱電機株式会社 | P−mosトランジスタのホットキャリア劣化のシミュレーション方法 |
JP3444693B2 (ja) * | 1995-04-25 | 2003-09-08 | 三菱電機株式会社 | Tftの信頼性評価方法 |
JP3484462B2 (ja) * | 1996-04-11 | 2004-01-06 | 株式会社ルネサステクノロジ | フローティングsoi−mosfetの寿命を予測する方法 |
US6063698A (en) | 1997-06-30 | 2000-05-16 | Motorola, Inc. | Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits |
JP3789220B2 (ja) | 1997-12-25 | 2006-06-21 | 松下電器産業株式会社 | 絶縁膜評価方法および装置ならびにプロセス評価方法 |
US6049213A (en) * | 1998-01-27 | 2000-04-11 | International Business Machines Corporation | Method and system for testing the reliability of gate dielectric films |
US5999011A (en) | 1998-03-26 | 1999-12-07 | Taiwan Semiconductor Manufacturing Company | Method of fast testing of hot carrier effects |
US6587994B1 (en) | 1999-03-09 | 2003-07-01 | Fujitsu Limited | Hot-carrier degradation simulation of a semiconductor device |
WO2000075980A1 (fr) | 1999-06-02 | 2000-12-14 | Matsushita Electric Industrial Co., Ltd. | Procede d'estimation de la duree de vie d'un dispositif a circuit integre a semi-conducteur et son procede de commande |
US6525544B1 (en) * | 1999-06-15 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd. | Method for predicting lifetime of insulating film and method for reliability testing of semiconductor device |
JP3405713B2 (ja) * | 2000-06-27 | 2003-05-12 | 松下電器産業株式会社 | 半導体装置の寿命推定方法および信頼性シミュレーション方法 |
US6815970B2 (en) | 2001-08-31 | 2004-11-09 | Texas Instruments Incorporated | Method for measuring NBTI degradation effects on integrated circuits |
US6842381B2 (en) | 2002-01-25 | 2005-01-11 | Taiwan Semiconductor Manufacturing Co. | Method of marginal erasure for the testing of flash memories |
US6825684B1 (en) * | 2002-06-10 | 2004-11-30 | Advanced Micro Devices, Inc. | Hot carrier oxide qualification method |
US6724214B2 (en) * | 2002-09-13 | 2004-04-20 | Chartered Semiconductor Manufacturing Ltd. | Test structures for on-chip real-time reliability testing |
US6963215B1 (en) * | 2004-07-26 | 2005-11-08 | Agere Systems Inc. | Operation of semiconductor devices subject to hot carrier injection |
-
2005
- 2005-03-10 US US11/077,463 patent/US7106088B2/en not_active Expired - Fee Related
- 2005-03-30 SG SG200501993A patent/SG124324A1/en unknown
- 2005-11-28 KR KR1020050114147A patent/KR100711556B1/ko active IP Right Grant
- 2005-12-27 JP JP2005374490A patent/JP2006194875A/ja active Pending
-
2006
- 2006-01-09 TW TW095100755A patent/TWI267950B/zh not_active IP Right Cessation
- 2006-01-10 CN CNB2006100006412A patent/CN100412557C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215667A (ja) * | 1988-07-04 | 1990-01-19 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
JP2000266803A (ja) * | 1999-03-16 | 2000-09-29 | Matsushita Electronics Industry Corp | 半導体装置の評価方法 |
JP2001077111A (ja) * | 1999-07-19 | 2001-03-23 | Sharp Corp | アルミニウムをドープしたジルコニウム誘電体膜のトランジスタ構造およびその堆積方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014203467A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | メモリシステム、制御システムおよび寿命予測方法 |
Also Published As
Publication number | Publication date |
---|---|
US7106088B2 (en) | 2006-09-12 |
KR100711556B1 (ko) | 2007-04-27 |
CN1811478A (zh) | 2006-08-02 |
TW200625537A (en) | 2006-07-16 |
CN100412557C (zh) | 2008-08-20 |
SG124324A1 (en) | 2006-08-30 |
TWI267950B (en) | 2006-12-01 |
KR20060092995A (ko) | 2006-08-23 |
US20060158210A1 (en) | 2006-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2006194875A (ja) | Misfetの寿命予測方法 | |
Ribes et al. | Review on high-k dielectrics reliability issues | |
Cartier et al. | Stress-induced leakage current and defect generation in nFETs with HfO 2/TiN gate stacks during positive-bias temperature stress | |
Xu et al. | A study of relaxation current in high-/spl kappa/dielectric stacks | |
Oates | Reliability issues for high-k gate dielectrics | |
Ma et al. | Special reliability features for Hf-based high-/spl kappa/gate dielectrics | |
Mitard et al. | Large-scale time characterization and analysis of PBTI in HfO2/metal gate stacks | |
Zhang et al. | Dominant layer for stress-induced positive charges in Hf-based gate stacks | |
Wang et al. | Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment | |
Dueñas et al. | Electrical characterization of high-k dielectric gates for microelectronic devices | |
Crupi et al. | Energy and Spatial Distribution of Traps in $\hbox {SiO} _ {2}/\hbox {Al} _ {2}\hbox {O} _ {3} $ nMOSFETs | |
Shanware et al. | Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics | |
Tao et al. | TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics | |
O'Sullivan et al. | Gate stack engineering to enhance high-κ/metal gate reliability for DRAM I/O applications | |
US7106087B2 (en) | Method and apparatus for evaluating semiconductor device | |
Harris et al. | Electrical observation of deep traps in high-/spl kappa//metal gate stack transistors | |
US20060115910A1 (en) | Method for predicting lifetime of insulating film | |
JP2007258488A (ja) | 絶縁膜の絶縁破壊寿命推定方法 | |
Chiang et al. | A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric | |
Young et al. | Detection of electron trap generation due to constant voltage stress on high-κ gate stacks | |
Southwick et al. | Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO 2/SiO 2 and SiO 2 MOS Gate Stacks | |
JP4575271B2 (ja) | 半導体素子の評価方法 | |
Tzeng et al. | Physical and reliability characteristics of Hf-based gate dielectrics on strained-Si/sub 1-x/Ge/sub x/MOS devices | |
Yew et al. | Study of the multistep-deposited and UV-ozone-annealed HfZrO gate stack by scanning tunneling microscopy and pulse $ C $–$ V $ measurement | |
Aguirre et al. | Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091013 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100112 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100506 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120625 |