JP2006191076A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006191076A5 JP2006191076A5 JP2005376492A JP2005376492A JP2006191076A5 JP 2006191076 A5 JP2006191076 A5 JP 2006191076A5 JP 2005376492 A JP2005376492 A JP 2005376492A JP 2005376492 A JP2005376492 A JP 2005376492A JP 2006191076 A5 JP2006191076 A5 JP 2006191076A5
- Authority
- JP
- Japan
- Prior art keywords
- ion
- reflective
- ultraviolet rays
- reflective layer
- photomask according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000002500 ions Chemical class 0.000 claims 16
- 239000011358 absorbing material Substances 0.000 claims 6
- 238000005468 ion implantation Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040115074A KR100630728B1 (ko) | 2004-12-29 | 2004-12-29 | 반사 포토마스크 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006191076A JP2006191076A (ja) | 2006-07-20 |
| JP2006191076A5 true JP2006191076A5 (enExample) | 2009-02-12 |
Family
ID=36612032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005376492A Withdrawn JP2006191076A (ja) | 2004-12-29 | 2005-12-27 | 反射フォトマスク及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20060141370A1 (enExample) |
| JP (1) | JP2006191076A (enExample) |
| KR (1) | KR100630728B1 (enExample) |
| CN (1) | CN1797192A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2894346B1 (fr) * | 2005-12-02 | 2012-03-30 | Commissariat Energie Atomique | Masque de photolithographie en extreme ultra-violet, a cavites absorbantes |
| JP5521714B2 (ja) * | 2010-04-06 | 2014-06-18 | 凸版印刷株式会社 | Ｅｕｖ用反射型マスク製造方法 |
| JP5830089B2 (ja) | 2010-06-15 | 2015-12-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法 |
| DE102011003357A1 (de) * | 2011-01-31 | 2012-08-02 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| WO2013156328A2 (en) * | 2012-04-18 | 2013-10-24 | Asml Netherlands B.V. | Mask for lithographic apparatus and methods of inspection |
| TWI835896B (zh) * | 2018-10-26 | 2024-03-21 | 美商應用材料股份有限公司 | 具有後側塗層的極紫外線掩模 |
| CN114859651A (zh) * | 2022-07-05 | 2022-08-05 | 上海传芯半导体有限公司 | 反射型掩模基板及制备方法、反射型掩模版及制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6346352B1 (en) * | 2000-02-25 | 2002-02-12 | International Business Machines Corporation | Quartz defect removal utilizing gallium staining and femtosecond ablation |
| DE10134231B4 (de) * | 2001-07-13 | 2006-06-14 | Infineon Technologies Ag | EUV-Reflektionsmaske |
| US20040159538A1 (en) * | 2003-02-13 | 2004-08-19 | Hans Becker | Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank |
-
2004
- 2004-12-29 KR KR1020040115074A patent/KR100630728B1/ko not_active Expired - Fee Related
-
2005
- 2005-11-15 CN CN200510124778.4A patent/CN1797192A/zh active Pending
- 2005-12-27 JP JP2005376492A patent/JP2006191076A/ja not_active Withdrawn
- 2005-12-29 US US11/319,725 patent/US20060141370A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005530338A5 (enExample) | ||
| JP2009539252A5 (enExample) | ||
| TW200745740A (en) | Mask pattern generating method | |
| EP2637062A3 (en) | Pattern forming method | |
| WO2003017002A1 (en) | Composition for forming antireflective film for use in lithography | |
| EP1667249A3 (en) | Laser irradiation device, pattering method and method of fabricating organic light emitting display ( oled ) using the patterning method. | |
| JP2009037023A5 (enExample) | ||
| WO2007136656A3 (en) | Colored masking for forming transparent structures | |
| JP2008053698A5 (enExample) | ||
| TW200636865A (en) | Method for etching a molybdenum layer suitable for photomask fabrication | |
| TW200608144A (en) | Photoresist undercoat-forming material and patterning process | |
| WO2008082942A3 (en) | High-z structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels | |
| WO2007103539A3 (en) | Fabrication of inorganic materials using templates with labile linkage | |
| JP2010165669A5 (ja) | 発光装置の作製方法 | |
| WO2008083197A3 (en) | Imaging post structures using x and y dipole optics and a single mask | |
| JP2006191076A5 (enExample) | ||
| JP2003156667A5 (enExample) | ||
| JP2008298962A5 (enExample) | ||
| JP2006100808A5 (enExample) | ||
| JP2009086384A5 (enExample) | ||
| SG130083A1 (en) | A system and method for photolithography in semiconductor manufacturing | |
| TW200632552A (en) | Process for producing resist pattern and conductor pattern | |
| EP1510863A3 (en) | Mask and method of fabricating the same, and method of machining material | |
| WO2009078341A1 (ja) | 光導波路及びその製造方法 | |
| JP2010027210A5 (enExample) |