CN1797192A - 反射光掩模及其制造方法 - Google Patents

反射光掩模及其制造方法 Download PDF

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Publication number
CN1797192A
CN1797192A CN200510124778.4A CN200510124778A CN1797192A CN 1797192 A CN1797192 A CN 1797192A CN 200510124778 A CN200510124778 A CN 200510124778A CN 1797192 A CN1797192 A CN 1797192A
Authority
CN
China
Prior art keywords
ion
reflective layer
reflective
absorber
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200510124778.4A
Other languages
English (en)
Chinese (zh)
Inventor
金锡必
宋利宪
金元柱
张丞爀
金勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1797192A publication Critical patent/CN1797192A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN200510124778.4A 2004-12-29 2005-11-15 反射光掩模及其制造方法 Pending CN1797192A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040115074A KR100630728B1 (ko) 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법
KR115074/04 2004-12-29

Publications (1)

Publication Number Publication Date
CN1797192A true CN1797192A (zh) 2006-07-05

Family

ID=36612032

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510124778.4A Pending CN1797192A (zh) 2004-12-29 2005-11-15 反射光掩模及其制造方法

Country Status (4)

Country Link
US (1) US20060141370A1 (enExample)
JP (1) JP2006191076A (enExample)
KR (1) KR100630728B1 (enExample)
CN (1) CN1797192A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114859651A (zh) * 2022-07-05 2022-08-05 上海传芯半导体有限公司 反射型掩模基板及制备方法、反射型掩模版及制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP5521714B2 (ja) * 2010-04-06 2014-06-18 凸版印刷株式会社 Ｅｕｖ用反射型マスク製造方法
JP5830089B2 (ja) 2010-06-15 2015-12-09 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
DE102011003357A1 (de) * 2011-01-31 2012-08-02 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2013156328A2 (en) * 2012-04-18 2013-10-24 Asml Netherlands B.V. Mask for lithographic apparatus and methods of inspection
TWI835896B (zh) * 2018-10-26 2024-03-21 美商應用材料股份有限公司 具有後側塗層的極紫外線掩模

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
DE10134231B4 (de) * 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US20040159538A1 (en) * 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114859651A (zh) * 2022-07-05 2022-08-05 上海传芯半导体有限公司 反射型掩模基板及制备方法、反射型掩模版及制备方法

Also Published As

Publication number Publication date
US20060141370A1 (en) 2006-06-29
KR100630728B1 (ko) 2006-10-02
KR20060076599A (ko) 2006-07-04
JP2006191076A (ja) 2006-07-20

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20060705