JP2006179911A - セラミック厚膜素子アレイ形成方法 - Google Patents
セラミック厚膜素子アレイ形成方法 Download PDFInfo
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- JP2006179911A JP2006179911A JP2005364312A JP2005364312A JP2006179911A JP 2006179911 A JP2006179911 A JP 2006179911A JP 2005364312 A JP2005364312 A JP 2005364312A JP 2005364312 A JP2005364312 A JP 2005364312A JP 2006179911 A JP2006179911 A JP 2006179911A
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- 238000000034 method Methods 0.000 title claims abstract description 102
- 239000000919 ceramic Substances 0.000 title claims abstract description 92
- 238000003491 array Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 239000010410 layer Substances 0.000 claims abstract description 86
- 239000012790 adhesive layer Substances 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 26
- 230000007704 transition Effects 0.000 claims abstract description 11
- 230000008014 freezing Effects 0.000 claims abstract description 6
- 238000007710 freezing Methods 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 50
- 238000007639 printing Methods 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000007796 conventional method Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 47
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 47
- 239000010408 film Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 11
- 239000012071 phase Substances 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Laminated Bodies (AREA)
Abstract
【解決手段】仮基板上にセラミック素子を形成する。仮基板としては例えば剥離層を有する基板を準備し(12)その剥離層に搬送用被覆例えばビークル層を被着させ(14)搬送用被覆上に素子例えばPZT素子を形成する(16)。次に、水層等の仮接着層を有する焼成用基板上に素子を転写する。例えば、素子が仮接着層内に埋まるよう仮基板及び焼成用基板を一体化させ(20)仮接着層に凍結等の相転移を引き起こし(22)素子が仮接着層内に残るように仮基板及び剥離層を除去する(24)。次いで、例えば素子が焼成用基板上に残るように仮接着層を除去した上で(26)素子を焼成する(28)。そして素子を本基板に転写する(32)。これに前後して素子上に電極を堆積させてもよい(30,34)。
【選択図】図1
Description
Claims (4)
- 仮基板上にセラミック素子を形成する工程と、
仮接着層を有する焼成用基板上に当該仮接着層の相転移を通じてセラミック素子を転写する工程と、
セラミック素子を焼成する工程と、
セラミック素子を本基板に転写する工程と、
を有する方法。 - 請求項1記載の方法において、仮接着層が水である方法。
- 剥離層を有する印刷用基板を準備する工程と、
剥離層に搬送用被覆を被着させる工程と、
搬送用被覆上にセラミック素子を形成する工程と、
仮接着層を有する焼成用基板を準備する工程と、
セラミック素子が仮接着層内に埋まるよう印刷用基板及び焼成用基板を一体化させる工程と、
仮接着層を相転移させる工程と、
セラミック素子が仮接着層内に残るよう印刷用基板及び剥離層を除去する工程と、
セラミック素子が焼成用基板上に残るよう仮接着層を除去する工程と、
焼成用基板上のセラミック素子を焼成する工程と、
セラミック素子上に電極を堆積させる工程と、
セラミック素子を本基板に転写する工程と、
を有する厚膜セラミック素子アレイ形成方法。 - 剥離層を有する印刷用基板を準備する工程と、
剥離層にビークル層を被着させる工程と、
ビークル層上にPZT素子を形成する工程と、
水層を有する焼成用基板を準備する工程と、
PZT素子が水層に濡れるよう印刷用基板及び焼成用基板を一体化させる工程と、
水層を凍らせる工程と、
PZT素子が凍った水層内に残るよう印刷用基板及び剥離層を除去する工程と、
PZT素子が焼成用基板上に残るよう水層を溶融及び乾燥させる工程と、
焼成用基板上のPZT素子を焼成する工程と、
PZT素子上に電極を堆積させる工程と、
PZT素子を本基板に転写する工程と、
を有するPZT厚膜セラミック素子アレイ形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/017,325 | 2004-12-20 | ||
US11/017,325 US7070669B1 (en) | 2004-12-20 | 2004-12-20 | Method for forming ceramic thick film element arrays |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006179911A true JP2006179911A (ja) | 2006-07-06 |
JP5313431B2 JP5313431B2 (ja) | 2013-10-09 |
Family
ID=35874499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005364312A Expired - Fee Related JP5313431B2 (ja) | 2004-12-20 | 2005-12-19 | セラミック厚膜素子アレイ形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7070669B1 (ja) |
EP (1) | EP1672711B1 (ja) |
JP (1) | JP5313431B2 (ja) |
DE (1) | DE602005011745D1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008028372A (ja) * | 2006-07-19 | 2008-02-07 | Samsung Electro Mech Co Ltd | レーザリフトオフを用いた誘電体薄膜を有する薄膜キャパシタが内蔵された印刷回路基板の製造方法、及びこれから製造された薄膜キャパシタが内蔵された印刷回路基板 |
WO2023084678A1 (ja) * | 2021-11-11 | 2023-05-19 | 株式会社芝浦電子 | サーミスタ焼結体およびサーミスタ焼結体の製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7467928B2 (en) * | 2002-12-12 | 2008-12-23 | Board Of Trustees Of The University Of Arkansas | Microfluidic device utilizing magnetohydrodynamics and method for fabrication thereof |
US7401403B2 (en) * | 2004-12-20 | 2008-07-22 | Palo Alto Research Center Incorporated | Method for forming ceramic thick film element arrays with fine feature size, high-precision definition, and/or high aspect ratios |
WO2007084952A2 (en) * | 2006-01-18 | 2007-07-26 | Akrion Technologies, Inc. | Systems and methods for drying a rotating substrate |
US8623737B2 (en) * | 2006-03-31 | 2014-01-07 | Intel Corporation | Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same |
US7992287B2 (en) * | 2007-11-06 | 2011-08-09 | Xerox Corporation | System for thinning a transducer with improved thickness uniformity |
JP5399970B2 (ja) * | 2010-03-31 | 2014-01-29 | パナソニック株式会社 | 強誘電体デバイスの製造方法 |
WO2014142303A1 (ja) * | 2013-03-14 | 2014-09-18 | 富士電機株式会社 | 半導体デバイスの製造方法 |
EP3671161A1 (de) | 2018-12-21 | 2020-06-24 | Exentis Knowledge GmbH | Formkörper sowie verfahren zur herstellung eines formkörpers |
EP3671160B1 (de) | 2018-12-21 | 2024-07-31 | Exentis Knowledge GmbH | Formkörper sowie verfahren zur herstellung eines formkörpers |
EP3671159B1 (de) * | 2018-12-21 | 2022-12-21 | Exentis Knowledge GmbH | Körper hergestellt durch additives herstellungsverfahren und verfahren zur herstellung des körpers |
JP2021163799A (ja) * | 2020-03-31 | 2021-10-11 | 三菱重工業株式会社 | 誘電体膜の製造方法 |
Citations (4)
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JP2001085715A (ja) * | 1999-09-09 | 2001-03-30 | Canon Inc | 半導体層の分離方法および太陽電池の製造方法 |
JP2002134806A (ja) * | 2000-10-19 | 2002-05-10 | Canon Inc | 圧電膜型アクチュエータおよび液体噴射ヘッドとその製造方法 |
JP2002237626A (ja) * | 2000-12-04 | 2002-08-23 | Canon Inc | 膜の転写方法 |
JP2004111939A (ja) * | 2002-08-29 | 2004-04-08 | Ngk Insulators Ltd | 積層型圧電素子及びその製造方法 |
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US4345967A (en) * | 1980-03-04 | 1982-08-24 | Cook Melvin S | Method of producing thin single-crystal sheets |
US5480503A (en) * | 1993-12-30 | 1996-01-02 | International Business Machines Corporation | Process for producing circuitized layers and multilayer ceramic sub-laminates and composites thereof |
JP3642110B2 (ja) * | 1996-06-11 | 2005-04-27 | 松下電器産業株式会社 | 電子部品の製造方法 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US6335263B1 (en) * | 2000-03-22 | 2002-01-01 | The Regents Of The University Of California | Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
US6964201B2 (en) | 2003-02-25 | 2005-11-15 | Palo Alto Research Center Incorporated | Large dimension, flexible piezoelectric ceramic tapes |
-
2004
- 2004-12-20 US US11/017,325 patent/US7070669B1/en not_active Expired - Fee Related
-
2005
- 2005-12-19 JP JP2005364312A patent/JP5313431B2/ja not_active Expired - Fee Related
- 2005-12-19 EP EP05112382A patent/EP1672711B1/en not_active Not-in-force
- 2005-12-19 DE DE602005011745T patent/DE602005011745D1/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001085715A (ja) * | 1999-09-09 | 2001-03-30 | Canon Inc | 半導体層の分離方法および太陽電池の製造方法 |
JP2002134806A (ja) * | 2000-10-19 | 2002-05-10 | Canon Inc | 圧電膜型アクチュエータおよび液体噴射ヘッドとその製造方法 |
JP2002237626A (ja) * | 2000-12-04 | 2002-08-23 | Canon Inc | 膜の転写方法 |
JP2004111939A (ja) * | 2002-08-29 | 2004-04-08 | Ngk Insulators Ltd | 積層型圧電素子及びその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008028372A (ja) * | 2006-07-19 | 2008-02-07 | Samsung Electro Mech Co Ltd | レーザリフトオフを用いた誘電体薄膜を有する薄膜キャパシタが内蔵された印刷回路基板の製造方法、及びこれから製造された薄膜キャパシタが内蔵された印刷回路基板 |
US8039759B2 (en) | 2006-07-19 | 2011-10-18 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing a printed circuit board with a thin film capacitor embedded therein having a dielectric film by using laser lift-off, and printed circuit board with a thin film capacitor embedded therein manufactured thereby |
US8049117B2 (en) | 2006-07-19 | 2011-11-01 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing a printed circuit board with a thin film capacitor embedded therein having a dielectric film by using laser lift-off, and printed circuit board with a thin film capacitor embedded therein manufactured thereby |
WO2023084678A1 (ja) * | 2021-11-11 | 2023-05-19 | 株式会社芝浦電子 | サーミスタ焼結体およびサーミスタ焼結体の製造方法 |
JP7281142B1 (ja) * | 2021-11-11 | 2023-05-25 | 株式会社芝浦電子 | サーミスタ焼結体およびサーミスタ焼結体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060130956A1 (en) | 2006-06-22 |
EP1672711B1 (en) | 2008-12-17 |
EP1672711A3 (en) | 2007-02-07 |
DE602005011745D1 (de) | 2009-01-29 |
EP1672711A2 (en) | 2006-06-21 |
US7070669B1 (en) | 2006-07-04 |
JP5313431B2 (ja) | 2013-10-09 |
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