JP2006165399A5 - - Google Patents
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- Publication number
- JP2006165399A5 JP2006165399A5 JP2004357292A JP2004357292A JP2006165399A5 JP 2006165399 A5 JP2006165399 A5 JP 2006165399A5 JP 2004357292 A JP2004357292 A JP 2004357292A JP 2004357292 A JP2004357292 A JP 2004357292A JP 2006165399 A5 JP2006165399 A5 JP 2006165399A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas supply
- branch pipe
- supply device
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 63
- 239000000758 substrate Substances 0.000 claims 10
- 238000005259 measurement Methods 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000002093 peripheral Effects 0.000 claims 1
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004357292A JP4358727B2 (ja) | 2004-12-09 | 2004-12-09 | ガス供給装置,基板処理装置及び供給ガス設定方法 |
TW094143443A TWI441254B (zh) | 2004-12-09 | 2005-12-08 | A gas supply device, a substrate processing device, and a supply gas setting method |
US11/296,209 US20060124169A1 (en) | 2004-12-09 | 2005-12-08 | Gas supply unit, substrate processing apparatus, and supply gas setting method |
KR1020050119216A KR100753692B1 (ko) | 2004-12-09 | 2005-12-08 | 가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법 |
CNB2005101303873A CN100390933C (zh) | 2004-12-09 | 2005-12-09 | 气体供给装置、基板处理装置及供给气体设定方法 |
US12/651,165 US8906193B2 (en) | 2004-12-09 | 2009-12-31 | Gas supply unit, substrate processing apparatus and supply gas setting method |
US13/691,125 US9441791B2 (en) | 2004-12-09 | 2012-11-30 | Gas supply unit, substrate processing apparatus and supply gas setting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004357292A JP4358727B2 (ja) | 2004-12-09 | 2004-12-09 | ガス供給装置,基板処理装置及び供給ガス設定方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006165399A JP2006165399A (ja) | 2006-06-22 |
JP2006165399A5 true JP2006165399A5 (de) | 2008-01-31 |
JP4358727B2 JP4358727B2 (ja) | 2009-11-04 |
Family
ID=36667053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004357292A Expired - Fee Related JP4358727B2 (ja) | 2004-12-09 | 2004-12-09 | ガス供給装置,基板処理装置及び供給ガス設定方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4358727B2 (de) |
KR (1) | KR100753692B1 (de) |
CN (1) | CN100390933C (de) |
TW (1) | TWI441254B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4550507B2 (ja) | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP4895167B2 (ja) * | 2006-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | ガス供給装置,基板処理装置,ガス供給方法 |
JP5211450B2 (ja) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
US20080078746A1 (en) | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
JP5192214B2 (ja) | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
JP5378706B2 (ja) * | 2008-05-22 | 2013-12-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びそれに用いられる処理ガス供給装置 |
JP5452133B2 (ja) * | 2009-08-27 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP5562712B2 (ja) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | 半導体製造装置用のガス供給装置 |
JP5689294B2 (ja) | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | 処理装置 |
JP5792563B2 (ja) | 2011-08-31 | 2015-10-14 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
JP2014003234A (ja) * | 2012-06-20 | 2014-01-09 | Tokyo Electron Ltd | プラズマ処理装置、及びプラズマ処理方法 |
JP6034655B2 (ja) | 2012-10-25 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6030994B2 (ja) | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
US9620417B2 (en) | 2014-09-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method of manufacturing fin-FET devices |
US20180149315A1 (en) * | 2015-05-17 | 2018-05-31 | Entegris, Inc. | Gas cabinets |
JP6502779B2 (ja) * | 2015-07-29 | 2019-04-17 | 東京エレクトロン株式会社 | ガス供給系のバルブのリークを検査する方法 |
JP7073710B2 (ja) | 2017-01-20 | 2022-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CH713539A1 (fr) * | 2017-03-03 | 2018-09-14 | Pelco Sarl | Mélangeur de gaz automatique. |
JP7296854B2 (ja) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給方法及び基板処理装置 |
CN117198848A (zh) * | 2022-06-01 | 2023-12-08 | 长鑫存储技术有限公司 | 气体分配装置、等离子体处理装置及方法 |
CN114774887A (zh) * | 2022-06-22 | 2022-07-22 | 拓荆科技(北京)有限公司 | 气体传输装置、方法和半导体沉积设备 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136098A (ja) * | 1991-11-15 | 1993-06-01 | Seiko Epson Corp | 半導体装置の製造装置及び半導体装置の製造方法 |
US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
JPH09289170A (ja) * | 1996-04-23 | 1997-11-04 | Sony Corp | 半導体製造装置 |
US6210482B1 (en) * | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
CN1240113C (zh) * | 2002-08-20 | 2006-02-01 | 东京毅力科创株式会社 | 等离子体蚀刻方法及装置 |
JP4127779B2 (ja) * | 2002-08-28 | 2008-07-30 | 株式会社神戸製鋼所 | 熱間等方圧加圧装置および熱間等方圧加圧方法 |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
-
2004
- 2004-12-09 JP JP2004357292A patent/JP4358727B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-08 KR KR1020050119216A patent/KR100753692B1/ko active IP Right Grant
- 2005-12-08 TW TW094143443A patent/TWI441254B/zh not_active IP Right Cessation
- 2005-12-09 CN CNB2005101303873A patent/CN100390933C/zh active Active
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