JP2006161120A - ホイスラー合金膜の成膜方法及びトンネル磁気抵抗素子 - Google Patents
ホイスラー合金膜の成膜方法及びトンネル磁気抵抗素子 Download PDFInfo
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- JP2006161120A JP2006161120A JP2004356203A JP2004356203A JP2006161120A JP 2006161120 A JP2006161120 A JP 2006161120A JP 2004356203 A JP2004356203 A JP 2004356203A JP 2004356203 A JP2004356203 A JP 2004356203A JP 2006161120 A JP2006161120 A JP 2006161120A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
【解決手段】 放電ガスとしてキセノンを用いて、Co2MnAl、Co2MnSi、CoCrAl、NiMnSb、SrLaMnO、PtMnSb、Mn2VAl、Fe2VAl、Co2FeSi、Co2MnGe、Co2FexCr(1-x)Alなどのホイスラー合金のターゲットをスパッタリングして被成膜体に成膜する。
【選択図】 図1
Description
すなわち、本発明のホイスラー合金膜の成膜方法は、放電ガスとしてキセノンを用いてホイスラー合金のターゲットをスパッタリングして被成膜体に成膜する。
Claims (6)
- 放電ガスとしてキセノンを用いてホイスラー合金のターゲットをスパッタリングして被成膜体に成膜することを特徴とするホイスラー合金膜の成膜方法。
- 前記ホイスラー合金は、Co2MnAl、Co2MnSi、CoCrAl、NiMnSb、SrLaMnO、PtMnSb、Mn2VAl、Fe2VAl、Co2FeSi、Co2MnGe、Co2FeXCr(1-X)Alの何れかである請求項1に記載のホイスラー合金膜の成膜方法。
- 前記スパッタリングによる成膜時に前記被成膜体の加熱を行わない請求項1または請求項2に記載のホイスラー合金膜の成膜方法。
- 前記スパッタリングによる成膜後に前記被成膜体を160℃〜250℃で加熱する請求項1または請求項2に記載のホイスラー合金膜の成膜方法。
- 放電ガスとしてキセノンを用いてホイスラー合金のターゲットをスパッタリングして成膜されたホイスラー合金膜を磁性層に含むトンネル磁気抵抗素子。
- 前記ホイスラー合金は、Co2MnAl、Co2MnSi、CoCrAl、NiMnSb、SrLaMnO、PtMnSb、Mn2VAl、Fe2VAl、Co2FeSi、Co2MnGe、Co2FeXCr(1-X)Alの何れかである請求項5に記載のトンネル磁気抵抗素子。
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047739A (ja) * | 2006-08-17 | 2008-02-28 | Nippon Hoso Kyokai <Nhk> | 磁気ランダムアクセスメモリ |
JP2008172680A (ja) * | 2007-01-15 | 2008-07-24 | Idex Co Ltd | 補聴器用収納ケース |
US7957106B2 (en) | 2007-04-30 | 2011-06-07 | Hitachi Global Storage Technologies Netherlands, B.V. | Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element |
WO2015121650A1 (en) * | 2014-02-12 | 2015-08-20 | The University Of York | Alloy crystallisation method |
CN105755303A (zh) * | 2016-04-06 | 2016-07-13 | 同济大学 | 一种MnAl合金磁性材料及其制备方法 |
CN106119801A (zh) * | 2016-09-20 | 2016-11-16 | 重庆师范大学 | 一种Cr‑Al二元合金材料及其制备方法 |
CN106498359A (zh) * | 2016-12-13 | 2017-03-15 | 东北大学 | 磁控共溅射制备面内磁化哈斯勒合金薄膜的方法 |
CN109913816A (zh) * | 2019-04-29 | 2019-06-21 | 天津城建大学 | 温度梯度化磁热材料及其制备方法 |
CN112522564A (zh) * | 2020-11-13 | 2021-03-19 | 吉林大学 | 一种TiB2颗粒增强镍基铸造高温合金及其制备方法 |
CN114093663A (zh) * | 2021-12-03 | 2022-02-25 | 天津城建大学 | 室温磁热材料及其制备方法 |
WO2022080011A1 (ja) * | 2020-10-14 | 2022-04-21 | 日東電工株式会社 | 金属層、タッチセンサ、調光素子、光電変換素子、熱線制御部材、アンテナ、電磁波シールド部材、画像表示装置および金属層の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022144071A (ja) | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 抵抗変化素子及び記憶装置 |
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JP2004260149A (ja) * | 2003-02-24 | 2004-09-16 | Hitachi Global Storage Technologies Netherlands Bv | 固定層に半金属強磁性体ホイスラー合金を有する交換結合構造の磁気抵抗素子 |
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JPH07147437A (ja) * | 1993-11-24 | 1995-06-06 | Toshiba Corp | 磁気抵抗効果素子 |
JPH0954949A (ja) * | 1995-08-11 | 1997-02-25 | Toshiba Corp | 磁気記録媒体 |
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JP2002026281A (ja) * | 2000-06-30 | 2002-01-25 | Toshiba Corp | 固体磁気メモリ |
JP2004214251A (ja) * | 2002-12-27 | 2004-07-29 | Hitachi Ltd | 磁気抵抗効果素子、及びそれを備える磁気ヘッド並びに磁気記録再生装置 |
JP2004234746A (ja) * | 2003-01-30 | 2004-08-19 | Hoya Corp | 垂直磁気記録媒体の製造方法 |
JP2004260149A (ja) * | 2003-02-24 | 2004-09-16 | Hitachi Global Storage Technologies Netherlands Bv | 固定層に半金属強磁性体ホイスラー合金を有する交換結合構造の磁気抵抗素子 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047739A (ja) * | 2006-08-17 | 2008-02-28 | Nippon Hoso Kyokai <Nhk> | 磁気ランダムアクセスメモリ |
JP2008172680A (ja) * | 2007-01-15 | 2008-07-24 | Idex Co Ltd | 補聴器用収納ケース |
US7957106B2 (en) | 2007-04-30 | 2011-06-07 | Hitachi Global Storage Technologies Netherlands, B.V. | Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element |
WO2015121650A1 (en) * | 2014-02-12 | 2015-08-20 | The University Of York | Alloy crystallisation method |
CN105755303A (zh) * | 2016-04-06 | 2016-07-13 | 同济大学 | 一种MnAl合金磁性材料及其制备方法 |
CN106119801A (zh) * | 2016-09-20 | 2016-11-16 | 重庆师范大学 | 一种Cr‑Al二元合金材料及其制备方法 |
CN106498359A (zh) * | 2016-12-13 | 2017-03-15 | 东北大学 | 磁控共溅射制备面内磁化哈斯勒合金薄膜的方法 |
CN109913816A (zh) * | 2019-04-29 | 2019-06-21 | 天津城建大学 | 温度梯度化磁热材料及其制备方法 |
CN109913816B (zh) * | 2019-04-29 | 2021-03-02 | 天津城建大学 | 温度梯度化磁热材料及其制备方法 |
WO2022080011A1 (ja) * | 2020-10-14 | 2022-04-21 | 日東電工株式会社 | 金属層、タッチセンサ、調光素子、光電変換素子、熱線制御部材、アンテナ、電磁波シールド部材、画像表示装置および金属層の製造方法 |
CN112522564A (zh) * | 2020-11-13 | 2021-03-19 | 吉林大学 | 一种TiB2颗粒增强镍基铸造高温合金及其制备方法 |
CN114093663A (zh) * | 2021-12-03 | 2022-02-25 | 天津城建大学 | 室温磁热材料及其制备方法 |
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