JP2006148086A5 - - Google Patents

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Publication number
JP2006148086A5
JP2006148086A5 JP2005305339A JP2005305339A JP2006148086A5 JP 2006148086 A5 JP2006148086 A5 JP 2006148086A5 JP 2005305339 A JP2005305339 A JP 2005305339A JP 2005305339 A JP2005305339 A JP 2005305339A JP 2006148086 A5 JP2006148086 A5 JP 2006148086A5
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JP
Japan
Prior art keywords
laser beam
semiconductor film
laser
semiconductor device
manufacturing
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Application number
JP2005305339A
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English (en)
Japanese (ja)
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JP2006148086A (ja
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Priority to JP2005305339A priority Critical patent/JP2006148086A/ja
Priority claimed from JP2005305339A external-priority patent/JP2006148086A/ja
Publication of JP2006148086A publication Critical patent/JP2006148086A/ja
Publication of JP2006148086A5 publication Critical patent/JP2006148086A5/ja
Withdrawn legal-status Critical Current

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JP2005305339A 2004-10-20 2005-10-20 レーザ照射方法、レーザ照射装置、および半導体装置の作製方法 Withdrawn JP2006148086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005305339A JP2006148086A (ja) 2004-10-20 2005-10-20 レーザ照射方法、レーザ照射装置、および半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004306140 2004-10-20
JP2005305339A JP2006148086A (ja) 2004-10-20 2005-10-20 レーザ照射方法、レーザ照射装置、および半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2006148086A JP2006148086A (ja) 2006-06-08
JP2006148086A5 true JP2006148086A5 (enrdf_load_stackoverflow) 2008-09-18

Family

ID=36627361

Family Applications (1)

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JP2005305339A Withdrawn JP2006148086A (ja) 2004-10-20 2005-10-20 レーザ照射方法、レーザ照射装置、および半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2006148086A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7960261B2 (en) 2007-03-23 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
WO2008128080A2 (en) * 2007-04-13 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative stage for use in forming lcd products
KR20100065145A (ko) * 2007-09-14 2010-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
EP2304776A1 (en) * 2008-07-16 2011-04-06 Sionyx, Inc. Thin sacrificial masking films for protecting semiconductors from pulsed laser process
KR101865222B1 (ko) 2011-10-18 2018-06-08 삼성디스플레이 주식회사 레이저 결정화 장치 및 레이저 결정화 방법
JP5865303B2 (ja) 2013-07-12 2016-02-17 アイシン精機株式会社 レーザ処理装置、およびレーザ処理方法
KR102587626B1 (ko) * 2018-09-10 2023-10-11 삼성전자주식회사 건식 세정 장치 및 건식 세정 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150203A (ja) * 1996-11-20 1998-06-02 Sony Corp 薄膜半導体装置の製造方法
JPH1126389A (ja) * 1997-06-30 1999-01-29 Sumitomo Electric Ind Ltd ダイヤモンドの改質方法
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002299629A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ポリシリコン薄膜半導体およびポリシリコン薄膜半導体の製造方法
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
JP2002176008A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 照射レーザビームの測定方法とその測定装置
JP2002329911A (ja) * 2001-04-27 2002-11-15 Komatsu Ltd レーザ装置、増幅器、及び紫外線レーザ装置
JP2004064064A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP2004158627A (ja) * 2002-11-06 2004-06-03 Renesas Technology Corp 半導体装置の製造方法
JP2004165530A (ja) * 2002-11-15 2004-06-10 Sangaku Renkei Kiko Kyushu:Kk レーザー装置及び電気光学分散を用いた同調方法
JP4515088B2 (ja) * 2002-12-25 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20070043028A (ko) * 2004-08-06 2007-04-24 스미토모덴키고교가부시키가이샤 ｐ형 반도체 영역을 형성하는 방법 및 반도체 소자

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