JP2004289140A5 - - Google Patents

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Publication number
JP2004289140A5
JP2004289140A5 JP2004058378A JP2004058378A JP2004289140A5 JP 2004289140 A5 JP2004289140 A5 JP 2004289140A5 JP 2004058378 A JP2004058378 A JP 2004058378A JP 2004058378 A JP2004058378 A JP 2004058378A JP 2004289140 A5 JP2004289140 A5 JP 2004289140A5
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JP
Japan
Prior art keywords
laser
irradiation surface
laser beam
irradiation
beams
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Application number
JP2004058378A
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English (en)
Japanese (ja)
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JP4799825B2 (ja
JP2004289140A (ja
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Priority to JP2004058378A priority Critical patent/JP4799825B2/ja
Priority claimed from JP2004058378A external-priority patent/JP4799825B2/ja
Publication of JP2004289140A publication Critical patent/JP2004289140A/ja
Publication of JP2004289140A5 publication Critical patent/JP2004289140A5/ja
Application granted granted Critical
Publication of JP4799825B2 publication Critical patent/JP4799825B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004058378A 2003-03-03 2004-03-03 レーザ照射方法 Expired - Fee Related JP4799825B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004058378A JP4799825B2 (ja) 2003-03-03 2004-03-03 レーザ照射方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003055289 2003-03-03
JP2003055289 2003-03-03
JP2004058378A JP4799825B2 (ja) 2003-03-03 2004-03-03 レーザ照射方法

Publications (3)

Publication Number Publication Date
JP2004289140A JP2004289140A (ja) 2004-10-14
JP2004289140A5 true JP2004289140A5 (enrdf_load_stackoverflow) 2006-07-20
JP4799825B2 JP4799825B2 (ja) 2011-10-26

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Family Applications (1)

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JP2004058378A Expired - Fee Related JP4799825B2 (ja) 2003-03-03 2004-03-03 レーザ照射方法

Country Status (1)

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JP (1) JP4799825B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4429586B2 (ja) 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7160762B2 (en) 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP5068975B2 (ja) * 2006-09-29 2012-11-07 富士フイルム株式会社 レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
KR101391695B1 (ko) 2012-04-24 2014-05-07 삼성디스플레이 주식회사 레이저 결정화 장비 및 이를 이용한 박막 트랜지스터 기판 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183023A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPH04282869A (ja) * 1991-03-11 1992-10-07 G T C:Kk 薄膜半導体装置の製造方法及びこれを実施するための装置
JP3477888B2 (ja) * 1995-02-07 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法
JPH09270393A (ja) * 1996-03-29 1997-10-14 Sanyo Electric Co Ltd レーザー光照射装置
JPH11340160A (ja) * 1998-05-29 1999-12-10 Sumitomo Heavy Ind Ltd レーザアニーリング装置及び方法
JP2002139697A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp 複数レーザビームを用いたレーザ光学系とレーザアニーリング装置
JP4845309B2 (ja) * 2000-12-27 2011-12-28 株式会社半導体エネルギー研究所 レーザアニール方法及び半導体装置の作製方法
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus

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