JP2004289140A5

JP2004289140A5 -

Info

Publication number: JP2004289140A5
Application number: JP2004058378A
Authority: JP
Filing date: 2004-03-03
Publication date: 2006-07-20
Anticipated expiration: 2024-03-03

Claims

The irradiation surface of the first continuous wave laser beam is a wavelength than that of visible light is incident, processing the first laser beam such that the elliptical beam, the continuous oscillation is basic wave 2 the laser beam is irradiated from an oblique at the same time as the previous SL first laser beam of,
It said first laser beam and said second laser beam, and the irradiation surface a relatively laser irradiation method of moving,
The first laser beam is cut at both ends in the major axis direction on the irradiation surface,
The laser irradiation method , wherein the second laser beam irradiates a region irradiated with the first laser beam on the irradiation surface.

The plurality of first laser beams are processed into an elliptical beam on an irradiation surface on which a plurality of continuous oscillation first laser beams having a wavelength shorter than or equal to visible light are incident. The second laser beam is irradiated at an angle simultaneously with the plurality of first laser beams,
A laser irradiation method for relatively moving the plurality of first laser beams and the second laser beam and the irradiation surface,
The plurality of first laser beams are superimposed on the irradiation surface so that the major axis is in a straight line,
In the irradiation surface, both ends of the superposed first laser beams in the major axis direction are cut off,
The laser irradiation method, wherein the second laser beam irradiates the irradiation surface in a region irradiated with the plurality of superimposed first laser beams.

The plurality of first laser beams are processed into an elliptical beam on an irradiation surface on which a plurality of continuous oscillation first laser beams having a wavelength shorter than or equal to visible light are incident. Irradiating the plurality of second laser beams at a time simultaneously with the plurality of first laser beams,
A laser irradiation method for relatively moving the plurality of first laser beams and the plurality of second laser beams and the irradiation surface,
The plurality of first laser beams are superimposed on the irradiation surface so that the major axis is in a straight line,
In the irradiation surface, both ends of the superposed first laser beams in the major axis direction are cut off,
The laser irradiation method, wherein the plurality of second laser beams irradiate a region irradiated with the first laser beam with both ends cut off on the irradiation surface.

In any one of Claim 1 thru | or 3,
The laser irradiation method, wherein the irradiation surface is irradiated with the second laser beam using an optical fiber.

In any one of Claims 1 thru | or 4,
The laser irradiation method according to claim 1, wherein both ends of the major axis direction of the first laser beam are cut off by a slit disposed above the irradiation surface.

In any one of Claims 1 thru | or 5,
The first laser beam or the second laser beam, a laser irradiation method, wherein the emitted gas body laser, a solid laser or a metal laser.

In any one of Claims 1 thru | or 6,
The first laser beam or the second laser beam, Ar laser, Kr laser, CO ₂ laser, YAG _laser, Y 2 _{O 3} laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, alexandrite wells laser, Ti : A laser irradiation method of emitting from a sapphire laser or a helium cadmium laser.

In any one of Claims 1 thru | or 7,
The laser irradiation method, wherein the irradiation surface is a surface of a semiconductor film formed on a light-transmitting substrate.

In any one of Claims 1 thru | or 8,
The irradiation surface is a surface of a semiconductor film formed on a substrate having a thickness d that is transparent to the first laser beam, and the length of the major axis or minor axis of the long beam is W. , The incident angle φ of the first laser beam with respect to the irradiation surface is
φ ≧ arctan (W / 2d)
The laser irradiation method characterized by satisfy | filling.

In any one of Claims 1 thru | or 9,
The irradiation surface is a surface of a semiconductor film formed on a substrate having a thickness d that is transparent to the second laser beam, and the length of the major axis or minor axis of the long beam is W. , The incident angle φ of the second laser beam with respect to the irradiation surface is
φ ≧ arctan (W / 2d)
The laser irradiation method characterized by satisfy | filling.