JP2000260731A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000260731A5 JP2000260731A5 JP1999063107A JP6310799A JP2000260731A5 JP 2000260731 A5 JP2000260731 A5 JP 2000260731A5 JP 1999063107 A JP1999063107 A JP 1999063107A JP 6310799 A JP6310799 A JP 6310799A JP 2000260731 A5 JP2000260731 A5 JP 2000260731A5
- Authority
- JP
- Japan
- Prior art keywords
- laser
- harmonic
- heat treatment
- light source
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 230000005284 excitation Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000002887 superconductor Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11063107A JP2000260731A (ja) | 1999-03-10 | 1999-03-10 | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス |
| TW089103934A TW445545B (en) | 1999-03-10 | 2000-03-06 | Laser heat treatment method, laser heat treatment apparatus and semiconductor device |
| EP06014726A EP1748471B1 (en) | 1999-03-10 | 2000-03-08 | Laser heat treatment apparatus |
| CNB008008256A CN1179401C (zh) | 1999-03-10 | 2000-03-08 | 激光热处理方法,激光热处理装置以及半导体装置 |
| DE60030517T DE60030517T8 (de) | 1999-03-10 | 2000-03-08 | Verfahren zur wärmebehandlung durch laserstrahlen, und halbleiteranordnung |
| EP00907924A EP1087429B1 (en) | 1999-03-10 | 2000-03-08 | Method for laser heat treatment, and semiconductor device |
| PCT/JP2000/001375 WO2000054314A1 (en) | 1999-03-10 | 2000-03-08 | Method and apparatus for laser heat treatment, and semiconductor device |
| KR10-2000-7012341A KR100407748B1 (ko) | 1999-03-10 | 2000-03-08 | 레이저 열처리 방법, 레이저 열처리 장치 및 반도체디바이스 |
| US09/708,608 US6566683B1 (en) | 1999-03-10 | 2000-11-09 | Laser heat treatment method, laser heat treatment apparatus, and semiconductor device |
| US10/420,779 US6753548B2 (en) | 1999-03-10 | 2003-04-23 | Laser heat treatment method, laser heat treatment apparatus, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11063107A JP2000260731A (ja) | 1999-03-10 | 1999-03-10 | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000260731A JP2000260731A (ja) | 2000-09-22 |
| JP2000260731A5 true JP2000260731A5 (enrdf_load_stackoverflow) | 2005-04-07 |
Family
ID=13219750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11063107A Pending JP2000260731A (ja) | 1999-03-10 | 1999-03-10 | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000260731A (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5244274B2 (ja) * | 2000-04-28 | 2013-07-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2002031871A1 (en) * | 2000-10-06 | 2002-04-18 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof |
| JP2002158184A (ja) * | 2000-11-16 | 2002-05-31 | Mitsubishi Electric Corp | レーザ熱処理用のレーザ光学系 |
| JP2002305146A (ja) * | 2001-04-06 | 2002-10-18 | Seiko Epson Corp | 薄膜半導体装置の製造方法および製造装置 |
| JP4646894B2 (ja) * | 2001-09-07 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7470602B2 (en) | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
| JP2005085817A (ja) * | 2003-09-04 | 2005-03-31 | Mitsubishi Electric Corp | 薄膜半導体装置およびその製造方法 |
| JP2005228819A (ja) | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | 半導体装置 |
| JP2008135609A (ja) * | 2006-11-29 | 2008-06-12 | Mitsubishi Electric Corp | 半導体膜及び薄膜トランジスタ |
| JP5574312B2 (ja) * | 2008-03-25 | 2014-08-20 | 国立大学法人山口大学 | 多結晶シリコン結晶粒界改質方法及び装置 |
| JP6350106B2 (ja) * | 2014-08-20 | 2018-07-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
-
1999
- 1999-03-10 JP JP11063107A patent/JP2000260731A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW445545B (en) | Laser heat treatment method, laser heat treatment apparatus and semiconductor device | |
| KR0153823B1 (ko) | 반도체 소자 제조 방법 | |
| KR101228488B1 (ko) | 레이저 어닐링 장치 및 레이저 어닐링 방법 | |
| KR100968687B1 (ko) | 반도체 장치의 제조 방법 및 반도체 장치의 제조 장치 | |
| US4234356A (en) | Dual wavelength optical annealing of materials | |
| TWI322463B (en) | Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device | |
| JP2001110743A (ja) | 半導体デバイス及びその作製方法 | |
| US7232715B2 (en) | Method for fabricating semiconductor film and semiconductor device and laser processing apparatus | |
| TW200529449A (en) | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device | |
| JP2000260731A5 (enrdf_load_stackoverflow) | ||
| CN100426464C (zh) | 半导体装置的制造方法 | |
| JP2004207337A (ja) | 薄膜トランジスタ、その製造方法及び表示デバイス | |
| JPWO2006098513A1 (ja) | 熱処理方法及び半導体の結晶化方法 | |
| JP2000260731A (ja) | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス | |
| JP2004039984A (ja) | レーザ照射を用いた半導体装置の製造方法 | |
| JP3908405B2 (ja) | レーザ熱処理方法 | |
| JPH1041244A (ja) | レーザ処理装置及び半導体装置の製造方法 | |
| JP2000077333A (ja) | 薄膜トランジスタの製造方法およびレーザアニール装置 | |
| JPS6235571A (ja) | 半導体装置の製造方法 | |
| JP2012069748A (ja) | レーザアニール方法及びレーザアニール装置 | |
| CN100591458C (zh) | 激光加工方法以及激光加工装置 | |
| JPS6325913A (ja) | 半導体薄膜の製造方法 | |
| JP2000114172A5 (enrdf_load_stackoverflow) | ||
| JP2003257862A (ja) | 半導体装置の作製方法 | |
| JP2003115456A5 (enrdf_load_stackoverflow) |