JP2000260731A5 - - Google Patents
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- JP2000260731A5 JP2000260731A5 JP1999063107A JP6310799A JP2000260731A5 JP 2000260731 A5 JP2000260731 A5 JP 2000260731A5 JP 1999063107 A JP1999063107 A JP 1999063107A JP 6310799 A JP6310799 A JP 6310799A JP 2000260731 A5 JP2000260731 A5 JP 2000260731A5
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- Prior art keywords
- laser
- harmonic
- heat treatment
- light source
- laser light
- Prior art date
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- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 6
- 230000001678 irradiating Effects 0.000 claims description 4
- 230000003287 optical Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000002887 superconductor Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Description
【００１８】
【課題を解決するための手段】
本発明に係るレーザ熱処理方法は、波長が350nm以上800nm以下であるパルスレーザ光源により発生されるレーザビームを線状ビームに成形して基板上に形成された基板上膜材料に、該基板上膜材料表面における照射エネルギー密度が1500mJ/cm 2 以下400mJ/ cm 2 以上になるように照射するものである。
0018
[Means for solving problems]
Engaging Relais chromatography The heat treatment method of the present invention, a laser beam generated by the pulse laser light source substrate film material formed on a substrate by forming a linear beam wavelength of 350nm or more 800nm or less, the irradiation energy density of the substrate on the surface of the membrane material is one which irradiates to be 1500 mJ / cm 2 or less 400 mJ / cm 2 or more.
本発明に係る別のレーザ熱処理方法は、パルスレーザ光源がNdイオンドープあるいはYbイオンドープの結晶またはガラスを励起媒質としたＱスイッチ発振固体レーザの高調波としたものである。 In another laser heat treatment method according to the present invention , the pulsed laser light source is a harmonic of a Q-switch oscillating solid-state laser using Nd ion-doped or Yb ion-doped crystal or glass as an excitation medium .
本発明に係る半導体デバイスは、波長が350nm以上800nm以下であるパルスレーザ光源により発生されるレーザビームを線状ビームに成形してに基板上膜材料に照射して熱処理された上記基板上膜材料を能動層として用いた複数のトランジスタを、より高周波で動作させる上記トランジスタのドレイン電流の方向が、上記線状ビームの幅方向になるよう作製したものである。 The semiconductor device according to the present invention is the substrate upper film material obtained by forming a laser beam generated by a pulsed laser light source having a wavelength of 350 nm or more and 800 nm or less into a linear beam and then irradiating the substrate upper film material with heat treatment. A plurality of transistors using the above as an active layer are manufactured so that the direction of the drain current of the transistors operating at a higher frequency is the width direction of the linear beam.
本発明に係るレーザ熱処理装置は、波長が350nm以上800nm以下であるパルスレーザ光源と、このパルスレーザ光源により発生されるレーザビームを線状ビームに成形するビーム整形光学系とを備え、該線状ビーム成形光学系は、上記線状ビームの被照射物表面における照射エネルギー密度が1500mJ/cm 2 以下400mJ/ cm 2 以上になるよう成形するものである。 The laser heat treatment apparatus according to the present invention includes a pulsed laser light source having a wavelength of 350 nm or more and 800 nm or less, and a beam shaping optical system for forming a laser beam generated by the pulsed laser light source into a linear beam. beam shaping optics is to irradiation energy density of the irradiated object surface of the linear beam shaping 1500 mJ / cm 2 or less 400 mJ / cm 2 or more so as.
本発明に係るレーザ熱処理装置は、パルスレーザ光源をNdイオンドープあるいはYbイオンドープの結晶またはガラスをレーザ励起媒質としたＱスイッチ発振固体レーザの高調波としたものである。 The laser heat treatment apparatus according to the present invention uses a pulsed laser light source as a harmonic of a Q-switch oscillating solid-state laser using Nd ion-doped or Yb ion-doped crystals or glass as a laser excitation medium .
【００５５】
【発明の効果】
以上説明したように、本発明に係るレーザ熱処理方法は、発振波長が350nm以上800nm以下であるパルスレーザ光を線状ビームに成形し、基板上に形成された基板上膜材料に、基板上膜材料表面における照射エネルギー密度が1500mJ/cm 2 以下400mJ/ cm 2 以上になるように照射して基板上膜材料を熱処理するもので、結晶の粒径が大きく、かつ高品質な薄膜が安定して得られる効果がある。
0055
【Effect of the invention】
As described above, in the laser heat treatment method according to the present invention, a pulsed laser beam having an oscillation wavelength of 350 nm or more and 800 nm or less is formed into a linear beam, and a substrate upper film is formed on the substrate upper film material. those irradiation energy density in the material surface is heat treated by irradiating the substrate film material so as to 1500 mJ / cm 2 or less 400 mJ / cm 2 or more, the particle size of the crystals is large, and high-quality thin film can stably There is an effect to be obtained.
本発明に係る別のレーザ熱処理方法は、パルスレーザ光源をNdイオンドープあるいはYbイオンドープの結晶またはガラスを励起媒質としたＱスイッチ発振固体レーザの高調波としたので、効率の良い、安定な熱処理ができる。 In another laser heat treatment method according to the present invention, since the pulsed laser light source is a harmonic of a Q-switch oscillating solid-state laser using Nd ion-doped or Yb ion-doped crystals or glass as an excitation medium, efficient and stable heat treatment is performed. Can be done .
本発明に係る半導体デバイスは、波長が350nm以上800nm以下であるパルスレーザ光源により発生されるレーザビームを線状ビームに成形して基板上膜材料に照射して熱処理された上記基板上膜材料を能動層として用いた複数のトランジスタが、より高周波で動作する上記トランジスタのドレイン電流の方向が、上記線状ビームの幅方向になるよう作製されたものであるので、高速に動作するデバイスを低コストで得られる。 The semiconductor device according to the present invention is the above-mentioned substrate upper film material which is heat-treated by forming a laser beam generated by a pulsed laser light source having a wavelength of 350 nm or more and 800 nm or less into a linear beam and irradiating the substrate upper film material with heat. Since the plurality of transistors used as the active layer are manufactured so that the direction of the drain current of the transistor operating at a higher frequency is the width direction of the linear beam, a device operating at high speed is inexpensive. Obtained at .
本発明に係るレーザ熱処理装置は、波長が350nm以上800nm以下であるパルスレーザ光源と、このパルスレーザ光源により発生されるレーザビームを線状ビームに成形するビーム整形光学系とを備え、該線状ビーム成形光学系は、上記線状ビームの被照射物表面における照射エネルギー密度が1500mJ/cm 2 以下400mJ/ cm 2 以上になるよう成形するものであり、多結晶薄膜の作製において、高品質な熱処理を提供する。 The laser heat treatment apparatus according to the present invention includes a pulsed laser light source having a wavelength of 350 nm or more and 800 nm or less, and a beam shaping optical system for forming a laser beam generated by the pulsed laser light source into a linear beam. beam shaping optics, which irradiation energy density of the irradiated object surface of the linear beam shaping 1500 mJ / cm 2 or less 400 mJ / cm 2 or more so as, in the preparation of the polycrystalline thin film, high-quality heat treatment To provide .
本発明に係る別のレーザ熱処理装置は、パルスレーザ光源をNdイオンドープあるいはYbイオンドープの結晶またはガラスをレーザ励起媒質としたＱスイッチ発振固体レーザの高調波としたので、安定な装置を提供する。 Another laser heat treatment apparatus according to the present invention provides a stable apparatus because the pulsed laser light source is a harmonic of a Q-switch oscillating solid-state laser using Nd ion-doped or Yb ion-doped crystal or glass as a laser excitation medium. ..
Claims (18)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11063107A JP2000260731A (en) | 1999-03-10 | 1999-03-10 | Method and equipment for laser heat treatment and semiconductor device |
| TW089103934A TW445545B (en) | 1999-03-10 | 2000-03-06 | Laser heat treatment method, laser heat treatment apparatus and semiconductor device |
| EP00907924A EP1087429B1 (en) | 1999-03-10 | 2000-03-08 | Method for laser heat treatment, and semiconductor device |
| CNB008008256A CN1179401C (en) | 1999-03-10 | 2000-03-08 | Method and apparatus for laser heat treatment, and semiconductor device |
| DE60030517T DE60030517T8 (en) | 1999-03-10 | 2000-03-08 | METHOD FOR HEAT TREATMENT THROUGH LASER RADIATION, AND SEMICONDUCTOR ARRANGEMENT |
| EP06014726A EP1748471B1 (en) | 1999-03-10 | 2000-03-08 | Laser heat treatment apparatus |
| PCT/JP2000/001375 WO2000054314A1 (en) | 1999-03-10 | 2000-03-08 | Method and apparatus for laser heat treatment, and semiconductor device |
| KR10-2000-7012341A KR100407748B1 (en) | 1999-03-10 | 2000-03-08 | Method and apparatus for laser heat treatment, and semiconductor device |
| US09/708,608 US6566683B1 (en) | 1999-03-10 | 2000-11-09 | Laser heat treatment method, laser heat treatment apparatus, and semiconductor device |
| US10/420,779 US6753548B2 (en) | 1999-03-10 | 2003-04-23 | Laser heat treatment method, laser heat treatment apparatus, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11063107A JP2000260731A (en) | 1999-03-10 | 1999-03-10 | Method and equipment for laser heat treatment and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000260731A JP2000260731A (en) | 2000-09-22 |
| JP2000260731A5 true JP2000260731A5 (en) | 2005-04-07 |
Family
ID=13219750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11063107A Pending JP2000260731A (en) | 1999-03-10 | 1999-03-10 | Method and equipment for laser heat treatment and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000260731A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5244274B2 (en) * | 2000-04-28 | 2013-07-24 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR100473245B1 (en) * | 2000-10-06 | 2005-03-10 | 미쓰비시덴키 가부시키가이샤 | Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof |
| JP2002158184A (en) * | 2000-11-16 | 2002-05-31 | Mitsubishi Electric Corp | Laser optical system for laser heat treatment |
| JP2002305146A (en) * | 2001-04-06 | 2002-10-18 | Seiko Epson Corp | Method and apparatus for manufacturing thin-film semiconductor device |
| JP4646894B2 (en) * | 2001-09-07 | 2011-03-09 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| US7470602B2 (en) | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
| JP2005085817A (en) * | 2003-09-04 | 2005-03-31 | Mitsubishi Electric Corp | Thin film semiconductor device and its manufacturing method |
| JP2005228819A (en) | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | Semiconductor device |
| JP2008135609A (en) * | 2006-11-29 | 2008-06-12 | Mitsubishi Electric Corp | Semiconductor film and thin-film transistor |
| JP5574312B2 (en) * | 2008-03-25 | 2014-08-20 | 国立大学法人山口大学 | Polycrystalline silicon grain boundary modification method and apparatus |
| JP6350106B2 (en) * | 2014-08-20 | 2018-07-04 | 住友電気工業株式会社 | Silicon carbide semiconductor device |
-
1999
- 1999-03-10 JP JP11063107A patent/JP2000260731A/en active Pending
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