JP2006135336A - 薄膜トランジスタ表示板 - Google Patents
薄膜トランジスタ表示板 Download PDFInfo
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- JP2006135336A JP2006135336A JP2005321563A JP2005321563A JP2006135336A JP 2006135336 A JP2006135336 A JP 2006135336A JP 2005321563 A JP2005321563 A JP 2005321563A JP 2005321563 A JP2005321563 A JP 2005321563A JP 2006135336 A JP2006135336 A JP 2006135336A
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- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 239000010408 film Substances 0.000 claims abstract description 84
- 230000001681 protective effect Effects 0.000 claims abstract description 28
- 238000003860 storage Methods 0.000 claims description 46
- 239000003990 capacitor Substances 0.000 claims description 25
- 230000003071 parasitic effect Effects 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 78
- 239000004065 semiconductor Substances 0.000 description 37
- 239000004020 conductor Substances 0.000 description 15
- 230000005684 electric field Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000004397 blinking Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013039 cover film Substances 0.000 description 3
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】薄膜トランジスタ表示板には、ゲート線(121)及びゲート線と絶縁されて交差しているデータ線(171)が形成されている。各々のゲート線のゲート電極(124)及びデータ線のソース電極(173)と連結されており、ゲート電極と絶縁されて重なり、2本の分枝を有するドレイン電極(175)と連結された薄膜トランジスタとゲート線、データ線及び薄膜トランジスタを覆う保護膜(180)が形成されている。保護膜の上部にはドレイン電極と連結されている画素電極(190)が形成されている。この時、2本の分枝は一直線上に所定の距離をおいて離隔された形態で配置されている。
【選択図】図3
Description
11、21 配向膜、
12、22 偏光板、
81、82 接触補助部材、
100、200 表示板、
110、210 絶縁基板、
121 ゲート線、
124 ゲート電極、
131 維持電極線、
135、133a、133b、133c、133d 維持電極、
140 ゲート絶縁膜、
151、154 半導体、
161、163、165 抵抗性接触部材、
171、179 データ線、
173 ソース電極、
175 ドレイン電極、
180 保護膜、
181、182、185 接触孔、
190a、190b 画素電極、
220 遮光部材、
250 蓋膜、
270 共通電極、
310 液晶分子。
Claims (12)
- ゲート電極を有するゲート線と、
前記ゲート線と絶縁されて交差しソース電極を有するデータ線と、
前記ゲート電極及び前記ソース電極と連結されており、前記ゲート電極と絶縁されて重なって2本の分枝を有するドレイン電極と連結された薄膜トランジスタと、
前記ゲート線、前記データ線及び前記薄膜トランジスタを覆う保護膜と、
前記ドレイン電極と連結されている画素電極とを含み、
前記2本の分枝は一直線上に所定の距離をおいて離隔された形態で配置されていることを特徴とする薄膜トランジスタ表示板。 - 前記2本の分枝は、前記ゲート線または前記データ線と平行な前記ゲート電極の中心線に対して対称であることを特徴とする請求項1に記載の薄膜トランジスタ表示板。
- 前記ソース電極は、前記2本の分枝を囲んでいることを特徴とする請求項2に記載の薄膜トランジスタ表示板。
- 前記ソース電極は、前記ゲート線または前記データ線と平行な前記ゲート電極の中心線に対して対称であることを特徴とする請求項3に記載の薄膜トランジスタ表示板。
- 前記ソース電極は、前記ゲート線と重ならないことを特徴とする請求項4に記載の薄膜トランジスタ表示板。
- 前記ソース電極は、90度回転した“H”字型または“H”字型模様であることを特徴とする請求項4に記載の薄膜トランジスタ表示板。
- 前記ソース電極が“H”字型である時、前記画素電極は、前記ゲート線を中心に下半面と上半面に分かれていることを特徴とする請求項6に記載の薄膜トランジスタ表示板。
- 前記ドレイン電極は、前記ゲート線の中心線に対して対称構造からなることを特徴とする請求項7に記載の薄膜トランジスタ表示板。
- 前記画素電極及び前記ドレイン電極のうちの少なくとも一つと重なって保持容量を形成する維持電極を有する維持電極線をさらに含むことを特徴津する請求項1に記載の薄膜トランジスタ表示板。
- 前記維持電極線は互いに隣接する前記画素電極の間に配置されていることを特徴とする請求項9に記載の薄膜トランジスタ表示板。
- ゲート電極を有するゲート線と、
前記ゲート線と絶縁されて交差し、ソース電極を有するデータ線と、
前記ゲート電極及び前記ソース電極と連結されており、前記ゲート電極と絶縁されて重なり、2本の分枝を有するドレイン電極と連結された薄膜トランジスタと、
前記ゲート線、前記データ線及び前記薄膜トランジスタを覆う保護膜と、
前記ドレイン電極と連結されている画素電極とを含み、
前記ドレイン電極の2本の分枝は互いに対向せず、前記2本の分枝を囲む前記ソース電極は“S”字型または上部横辺を除いた“S”字型模様をなすことを特徴とする薄膜トランジスタ表示板。 - 前記データ線に連結される前記ソース電極の一部は前記ゲート線と重ならないことを特徴とする請求項11に記載の薄膜トランジスタ表示板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0088812 | 2004-11-03 | ||
KR1020040088812A KR101061856B1 (ko) | 2004-11-03 | 2004-11-03 | 박막 트랜지스터 표시판 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006135336A true JP2006135336A (ja) | 2006-05-25 |
JP5295483B2 JP5295483B2 (ja) | 2013-09-18 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005321563A Active JP5295483B2 (ja) | 2004-11-03 | 2005-11-04 | 薄膜トランジスタ表示板 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20060091389A1 (ja) |
JP (1) | JP5295483B2 (ja) |
KR (1) | KR101061856B1 (ja) |
CN (1) | CN100517727C (ja) |
TW (1) | TWI394280B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018182339A (ja) * | 2009-07-17 | 2018-11-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101294269B1 (ko) * | 2006-05-24 | 2013-08-08 | 삼성디스플레이 주식회사 | 표시기판과 그 제조방법 및 이를 갖는 액정표시장치 |
KR20080038590A (ko) * | 2006-10-30 | 2008-05-07 | 삼성전자주식회사 | 박막트랜지스터 기판 및 그 제조방법 |
TWI363240B (en) * | 2008-03-31 | 2012-05-01 | Au Optronics Corp | Active array substrate, electrode substrate, and liquid crystal display panel |
KR101893992B1 (ko) * | 2011-12-15 | 2018-08-31 | 삼성코닝어드밴스드글라스 유한회사 | 5성분계 물질로 이루어진 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치 |
KR102308188B1 (ko) * | 2015-02-04 | 2021-10-01 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN205427404U (zh) * | 2016-03-30 | 2016-08-03 | 京东方科技集团股份有限公司 | 阵列基板、显示装置 |
KR102490895B1 (ko) * | 2017-12-14 | 2023-01-25 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
US11489085B1 (en) * | 2021-07-26 | 2022-11-01 | Hannstouch Solution Incorporated | Light sensing device having offset gate electrode and light sensing panel using the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285326A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | アクティブマトリックス型液晶表示素子 |
JP2004134504A (ja) * | 2002-10-09 | 2004-04-30 | Sanyo Electric Co Ltd | 液晶表示素子 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
JP3002518B2 (ja) * | 1990-10-17 | 2000-01-24 | 株式会社日立製作所 | 液晶表示装置 |
KR960014823B1 (ko) * | 1991-03-15 | 1996-10-21 | 가부시기가이샤 히다찌세이사구쇼 | 액정표시장치 |
US6215541B1 (en) * | 1997-11-20 | 2001-04-10 | Samsung Electronics Co., Ltd. | Liquid crystal displays and manufacturing methods thereof |
KR100590742B1 (ko) * | 1998-05-11 | 2007-04-25 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
CN1139837C (zh) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
US6838696B2 (en) * | 2000-03-15 | 2005-01-04 | Advanced Display Inc. | Liquid crystal display |
KR100370800B1 (ko) * | 2000-06-09 | 2003-02-05 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제작방법 |
KR100685914B1 (ko) * | 2000-09-05 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 멀티 도메인 액정표시소자 및 그 제조방법 |
JP3668122B2 (ja) * | 2000-11-07 | 2005-07-06 | 三洋電機株式会社 | 薄膜トランジスタ基板及びそれを備える液晶表示装置 |
JP2004527124A (ja) * | 2001-04-10 | 2004-09-02 | サーノフ コーポレイション | 有機薄膜トランジスタを使用する高性能アクティブマトリクスピクセルを提供する方法及び装置 |
US6583043B2 (en) * | 2001-07-27 | 2003-06-24 | Motorola, Inc. | Dielectric between metal structures and method therefor |
KR100740938B1 (ko) | 2001-08-30 | 2007-07-19 | 삼성전자주식회사 | 레이저 조사 표지를 가지는 박막 트랜지스터 기판 |
JP2005506575A (ja) | 2001-09-26 | 2005-03-03 | サムスン エレクトロニクス カンパニー リミテッド | 薄膜トランジスタ基板及びその製造方法と液晶表示装置 |
KR100391157B1 (ko) * | 2001-10-25 | 2003-07-16 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 |
US6933568B2 (en) * | 2002-05-17 | 2005-08-23 | Samsung Electronics Co., Ltd. | Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
KR100892087B1 (ko) * | 2002-10-28 | 2009-04-06 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
KR100920348B1 (ko) * | 2003-02-27 | 2009-10-07 | 삼성전자주식회사 | 액정 표시 장치 |
TW595005B (en) * | 2003-08-04 | 2004-06-21 | Au Optronics Corp | Thin film transistor and pixel structure with the same |
KR100980021B1 (ko) * | 2003-09-04 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7894026B2 (en) * | 2003-10-01 | 2011-02-22 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and liquid crystal display including light shield |
US9070647B2 (en) * | 2004-08-05 | 2015-06-30 | Au Optronics Corporation | Dual emitting method and device for active matrix organic electroluminescence |
-
2004
- 2004-11-03 KR KR1020040088812A patent/KR101061856B1/ko active IP Right Grant
-
2005
- 2005-11-03 TW TW094138639A patent/TWI394280B/zh active
- 2005-11-03 CN CNB2005101191685A patent/CN100517727C/zh active Active
- 2005-11-03 US US11/266,680 patent/US20060091389A1/en not_active Abandoned
- 2005-11-04 JP JP2005321563A patent/JP5295483B2/ja active Active
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2008
- 2008-08-20 US US12/195,239 patent/US8247816B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285326A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | アクティブマトリックス型液晶表示素子 |
JP2004134504A (ja) * | 2002-10-09 | 2004-04-30 | Sanyo Electric Co Ltd | 液晶表示素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018182339A (ja) * | 2009-07-17 | 2018-11-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
Also Published As
Publication number | Publication date |
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CN100517727C (zh) | 2009-07-22 |
TWI394280B (zh) | 2013-04-21 |
US8247816B2 (en) | 2012-08-21 |
KR101061856B1 (ko) | 2011-09-02 |
KR20060039634A (ko) | 2006-05-09 |
US20060091389A1 (en) | 2006-05-04 |
CN1805147A (zh) | 2006-07-19 |
US20080303025A1 (en) | 2008-12-11 |
TW200629564A (en) | 2006-08-16 |
JP5295483B2 (ja) | 2013-09-18 |
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