JP2006135100A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reliably suppress the formation of resin thin burrs on an exposed surface and thereby to improve hygroscopic property and mounting reliability, and to reduce manufacturing costs of a semiconductor device in which one surface of a die pad forms an exposed surface that extends from a resin sealing body. <P>SOLUTION: The semiconductor device comprises at least a die pad 101 and a semiconductor element 102 mounted on the die pad 101; and a resin sealing body 107 formed to seal the die pad 101 and the semiconductor element 102, wherein the back surface of the surface of the die pad 101 where the semiconductor element 102 is mounted is an exposure surface 101a extending in a square form from the resin sealing body 107, a resin receiving groove 109 shaped to extend along the outer peripheral end of the exposed surface 101a is formed on the periphery of the exposed surface 101a, and the resin receiving groove 109 becomes a corner groove 109a having a larger width at a bent section than at other parts. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a resin-sealed semiconductor device for surface mounting.

  2. Description of the Related Art With recent multifunctionalization, miniaturization, and thinning of electronic devices, there has been a demand for semiconductor devices that are thin and have good heat dissipation.

  Hereinafter, as such a conventional example, a semiconductor device disclosed in Patent Document 1 will be described with reference to the drawings.

  FIGS. 16A and 16B are diagrams schematically showing a conventional resin-encapsulated semiconductor device having a configuration in which one surface of a die pad is exposed. (A) is a sectional view, (b) is a rear view, (b) shows a state seen in the direction of arrow B in (a), and (a) shows XVIa-XVIa in (b). 'Shows a cross-section by lines.

  The semiconductor device 10 includes a die pad 11, and a semiconductor element 13 is fixed on the die pad 11 with an adhesive 12 applied to the die pad 11. A plurality of internal leads 14 are disposed around the die pad 11, and each of the internal leads 14 and the semiconductor element 13 are electrically connected by a thin metal wire 15.

  The die pad 11, the adhesive 12, the semiconductor element 13, the internal lead 14, and the fine metal wire 15 are sealed with a resin sealing body 16. Further, a plurality of external leads 17 are formed individually and continuously with the internal leads 14 so as to extend to the outside of the resin sealing body 16.

  In addition, the die pad 11 has a surface opposite to the surface to which the semiconductor element 13 is fixed exposed from the resin sealing body 16 in a square shape, thereby forming an exposed surface 11a.

  In addition, a resin receiving groove 18 having a shape along the outer peripheral end is formed at a predetermined distance from the outer peripheral end at the peripheral edge portion of the exposed surface 11a in the die pad 11. The resin receiving groove 18 has a continuous ring shape, and the exposed surface 11a has a square shape. Therefore, the resin receiving groove 18 has a square shape.

  Here, a manufacturing process of the semiconductor device 10 will be briefly described.

  First, a lead frame (at least) including a die pad 11, internal leads 14 disposed around the die pad 11, external leads 17 individually connected to the internal leads 14, and support leads (not shown) that support the die pad 11. Prepare (not shown). It is assumed that a resin receiving groove 18 is provided in advance on the exposed surface 11 a of the die pad 11.

  Next, the semiconductor element 13 is mounted on the die pad 11.

  Next, the semiconductor element 13 and the internal lead 14 are individually electrically connected by the fine metal wires 15.

  Next, the lead frame having the semiconductor element 13 and the fine metal wires 15 is set in a sealing mold (not shown). At this time, the die pad 11 supported by the support lead protrudes from the lead frame to the exposed surface 11a side because the support lead is bent. Thus, the die pad 11 is pressed against the sealing mold on the exposed surface 11a.

  Next, resin is supplied to the sealing mold, and the die pad 11, the semiconductor element 13, the internal lead 14, and the fine metal wire 15 are sealed. At this time, since the die pad 11 is pressed against the sealing mold on the exposed surface 11 a, the exposed surface 11 a is exposed to the outside from the resin sealing body 16.

  Here, since a part of the sealing resin enters between the exposed surface 11a and the sealing mold, a resin thin burr formed on the exposed surface 11a by hardening the entering sealing resin into a thin plate. appear. If a thin resin burr exists on the exposed surface 11a, for example, when the semiconductor device is mounted on a mounting substrate such as a printed circuit board, the exposed surface 11a becomes poorly soldered, causing a decrease in heat dissipation.

  However, since the resin receiving groove 18 is formed, the sealing resin that has entered the exposed surface 11 a is received by the resin receiving groove 18, and the resin thin burr is prevented from entering inside the resin receiving groove 18. It has become.

  Next, the lead frame is cut at a predetermined position, and a semiconductor device is completed through a predetermined process.

Thus, since the die pad 11 has the resin receiving groove 18 in the peripheral portion of the exposed surface 11a, the resin that enters between the back surface (exposed surface 11a) of the die pad 11 and the sealing mold in the resin sealing step is It can be received by the resin receiving groove 18. As a result, it is possible to prevent the resin from entering the resin receiving groove 18 and forming a resin thin burr, and when the semiconductor device 10 is mounted on the printed board or the like, the back surface of the die pad 11 is applied to the printed board or the like. Heat can be dissipated stably. Also, the mounting reliability is improved.
JP-A-11-220075

  However, when the conventional semiconductor device described above is manufactured, the resin receiving groove 18 is provided in spite of the provision of the resin receiving groove 18 when the die pad 11 is pressed against the sealing mold to perform resin sealing. In some cases, a thin resin burr of the sealing resin infiltrated inside the portion 18.

  As described above, when the resin thin burr is formed inside the resin receiving groove 18 on the exposed surface 11a, a process of removing the resin thin burr using a chemical or a water jet becomes necessary. If such a resin thin burr removal step exists, the cost required for the step leads to an increase in the cost of the semiconductor device. In addition, water or chemicals used in this step penetrates the resin sealing body 16 and the moisture resistance deteriorates, which causes a decrease in reliability.

  In view of the above-described problems, the present invention more reliably prevents the resin thin burr from entering the inside of the resin receiving groove, thereby improving the mounting reliability, and from the die pad to the printed circuit board and the like. An object of the present invention is to provide a semiconductor device capable of stably dissipating heat. It is another object of the present invention to provide a manufacturing method for manufacturing such a semiconductor device while eliminating the need for resin thin burr removal.

  When manufacturing a conventional semiconductor device, the reason why the resin thin burr of the sealing resin may enter inside the resin receiving groove is explained as follows.

  When forming the resin sealing body, the die pad is pressed against the sealing mold by the support lead. However, the support lead is pushed up by the pressure of injecting the resin, and the sealing resin that enters between the sealing mold and the die pad may increase. As a result, more sealing resin flows between the die pad and the sealing mold than the capacity of the resin receiving groove (the limit of the amount of the sealing resin that can be received by the resin receiving groove). Also penetrates to the inside and becomes a thin resin burr. This is the reason.

  Based on this, the first semiconductor device of the present invention is a semiconductor device that includes at least a die pad and a semiconductor element mounted on the die pad, and is formed with a resin sealing body that seals the die pad and the semiconductor element. The surface of the die pad opposite to the element mounting surface on which the semiconductor element is mounted is an exposed surface that is exposed in a square shape from the resin sealing body, and is along the outer peripheral edge of the exposed surface at the peripheral edge of the exposed surface. A resin receiving groove having a shape is formed, and the width of the bent portion of the resin receiving groove is wider than the width of other portions.

  According to the first semiconductor device, the resin receiving groove in which the width of the bent portion is wider than the width of the other portion is formed in the outer edge portion of the exposed surface of the die pad. For this reason, the capacity of the resin receiving groove is increased in the vicinity of the corner of the die pad, and more resin can be received than in other portions.

  Therefore, when resin sealing is performed, even when more sealing resin enters between the die pad and the sealing mold near the corner of the die pad, It can be reliably received by the resin receiving groove. As a result, it is possible to reliably prevent the resin thin burr from entering inside the resin receiving groove, and the resin thin burr removing step is not necessary, so that cost reduction and improved reliability can be realized.

  Furthermore, the width of the resin receiving groove is increased only in the vicinity of the corner of the die pad where the amount of sealing resin that enters the die pad increases. As a result, when the semiconductor device is mounted on a printed board or the like as a mounting board, the connection area due to solder or the like between the die pad and the printed board is prevented from being greatly reduced. In other words, in areas other than near the corner, the width of the resin receiving groove is avoided to be unnecessarily wide, and an area for connecting the die pad and the printed circuit board with solder or the like is secured. By doing in this way, the fall of heat dissipation is prevented.

  As described above, according to the semiconductor device of the present invention, it is possible to reliably prevent the formation of a resin thin burr on the die pad exposed from the resin sealing body, and to reduce the connection area due to solder or the like to the printed circuit board. By suppressing the heat dissipation, heat dissipation from the die pad to the printed circuit board can be reliably improved. Furthermore, since a thin resin deburring process is not required, cost reduction and improved reliability can be realized.

  Here, the fact that the exposed surface is exposed in a square shape means that the exposed shape can be strictly a square, but this is not necessarily required. For example, a support lead that supports the die pad is connected to the die pad, and its end is exposed from the resin sealing body together with the die pad, so that it may be shaped like a small protrusion attached to a square. It is also possible that the side has a gentle curve.

  The planar shape at the bent portion of the resin receiving groove is preferably a chamfered shape.

  Here, the chamfered shape refers to a shape that is bent at a predetermined angle by two or more secondary bendings so that the bending angle becomes gentle. For example, it bends 90 degrees as a whole by bending twice in the same direction at 45 degrees.

  In this way, the area of the flat surface of the die pad outside the resin receiving groove can be increased near the corner of the die pad where the resin easily enters between the die pad and the sealing mold. For this reason, the distance from the outer peripheral end of the die pad to the resin receiving groove is increased, and the die pad and the sealing mold are in contact with each other during this distance. For this reason, there is an effect of preventing the resin from entering between the die pad and the sealing mold by the sealing forming pressure (pressure when injecting the sealing resin) in the resin sealing process and reaching the resin receiving groove. Get higher.

  From the above, the effect of preventing the formation of resin thin burrs on the exposed surface of the die pad can be more reliably realized.

  Moreover, it is also preferable that the planar shape at the bent portion of the resin receiving groove is constituted by a curve.

  In this way, the area of the flat surface of the die pad outside the resin receiving groove can be increased in the vicinity of the corner of the die pad, as in the case where the bent portion is formed in a chamfered shape.

  Furthermore, since the resin receiving groove is configured by a curve and there are no corners, concentration of the sealing pressure can be prevented. That is, when the concentration of the sealing formation pressure occurs, a place where the resin easily enters is generated. Therefore, the penetration of the resin can be suppressed by preventing the concentration of the sealing formation pressure.

  From the above, it is possible to more reliably prevent the resin from entering the exposed surface of the die pad due to the sealing forming pressure in the resin sealing step.

  Moreover, it is preferable that the resin receiving groove is formed at least twice.

  In this way, since more resin can be received by the resin receiving groove, it is possible to reliably prevent the resin thin burr from entering the inside of the resin receiving groove on the exposed surface of the die pad.

  Furthermore, by providing the double resin receiving groove, a particularly remarkable effect can be obtained when the infiltration of the sealing resin is concentrated and generated at a specific position. This is due to the following reason.

  The sealing resin that has infiltrated a lot from a specific position is once received by the outer resin receiving groove, and then diffused inside the outer resin receiving groove by the flat portion of the die pad that exists between the two resin receiving grooves. Is done. Thereafter, the sealing resin can be further received by the inner resin receiving groove, and the sealing forming pressure is dispersed at this time. Thus, since the sealing formation pressure can be dispersed by providing the double resin receiving grooves, the effect can be obtained more significantly than the case of providing the single wide resin receiving grooves.

  In addition, the outer peripheral end of the die pad is preferably formed in a tapered shape in which the area of the exposed surface is larger than the area of the element mounting surface.

  In other words, the die pad has a shape that is obliquely cut from the end of the exposed surface toward the center of the device mounting surface, and the exposed surface has a larger area than the device mounting surface. Yes. As a result, for example, assuming that the exposed surface and the element mounting surface are parallel, the cross-sectional shape of the die pad perpendicular to the exposed surface is a trapezoid having a long side on the exposed surface side and a short side on the element mounting surface side.

  If it does in this way, when performing resin sealing, the sealing formation pressure added to the inclined outer peripheral end surface will work to press the die pad against the sealing mold. As a result, since the force with which the die pad is pressed against the sealing mold is improved, it is possible to more reliably prevent the resin thin burr from entering the exposed surface of the die pad.

  Moreover, it is preferable that at least a part of the outer peripheral end portion of the die pad is bent toward the element mounting surface side so as to be embedded inside the resin sealing body.

  If it does in this way, the adhesiveness of a die pad and a resin sealing body will improve because the bent part of the die pad is embedded inside the resin sealing body. For this reason, the moisture resistance of the semiconductor device is improved.

  Moreover, it is preferable that at least one hole penetrating the die pad is formed at a bent portion of the die pad.

  When a part of the outer peripheral edge of the die pad is bent and embedded inside the resin sealing body, when the moisture accumulated in the semiconductor device is vaporized, the vapor is exposed to the outside of the device. It may become difficult to be discharged. However, by forming a hole penetrating the bent portion of the die pad, a path through which the vapor escapes from the semiconductor device is secured, so that the vapor can be easily released. For this reason, it is possible to prevent the die pad from being distorted (expanded) due to the vapor pressure, and it is possible to realize a stable and favorable mountability when the semiconductor device is mounted on the printed board.

  In order to achieve the above object, a method of manufacturing a semiconductor device of the present invention includes a step of forming a lead frame including a die pad, a step of mounting a semiconductor element on an element mounting surface which is one surface of the die pad, Sealing the semiconductor element with a sealing resin so that an exposed surface that is the surface opposite to the element mounting surface of the die pad is exposed, and the step of forming the lead frame includes a peripheral portion of the exposed surface of the die pad. And a step of forming a resin receiving groove having a shape along the outer peripheral edge of the exposed surface and having a bent portion wider than other portion widths.

  According to the semiconductor device manufacturing method of the present invention, the resin receiving groove having a shape along the outer peripheral edge and having a wider width at the bent portion than the other portion is formed at the peripheral portion of the exposed surface of the die pad. The lead frame is used. For this reason, in a resin sealing process, which is one of the processes for manufacturing a semiconductor device, the sealing resin enters between the exposed surface of the die pad and the sealing mold, and a thin resin burr is formed on the exposed surface of the die pad. Can be prevented. In particular, in the vicinity of the corner of the die pad where the infiltration of the sealing resin is likely to occur, the resin receiving groove is wider than the other parts, so that the resin enters the inside of the resin receiving groove from the corner and the resin. It is possible to reliably prevent the occurrence of thin burrs.

  This eliminates the step of removing the resin thin burr, thereby reducing the cost required for the step and preventing deterioration of the quality of the semiconductor device (deterioration of moisture resistance, etc.) due to chemicals or moisture in the step. be able to.

  In addition, since the width of the resin receiving groove is wide only in the vicinity of the corner, the reduction of the contact area between the exposed surface and the printed circuit board is minimized, and the heat dissipation from the exposed surface to the printed circuit board is reduced. It is suppressed.

  As a result, the mountability and reliability of the semiconductor device can be improved, and the manufacturing cost can be reduced.

  The resin receiving groove formed on the die pad is preferably formed by etching.

  When etching is used, a resin receiving groove having a desirable configuration can be reliably formed.

  According to the present invention, the resin receiving groove is formed at the peripheral edge portion of the exposed surface of the die pad, and in particular, the resin receiving groove having a wider width than the other portions in the vicinity of the corner of the die pad. For this reason, the support lead for pressing the die pad against the sealing mold is pushed up by the sealing forming pressure, so that the resin can be reliably prevented from entering even in the vicinity of the corner where the resin easily enters the exposed surface. In addition, it is possible to minimize a reduction in connection area due to solder or the like between the die pad and the printed board when the semiconductor device is mounted on the printed board.

  From the above, it is possible to reliably prevent the occurrence of a resin thin burr on the exposed surface of the die pad, and the mounting reliability of the semiconductor device and the heat dissipation during mounting are improved.

  In addition, since the thin resin deburring process using chemicals or water jet is not required, the cost can be reduced and a semiconductor device having excellent moisture resistance can be manufactured.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
1 and 2A to 2C are views for explaining a semiconductor device according to the first embodiment of the present invention.

  FIG. 1 is a diagram showing a planar configuration of the semiconductor device according to the present embodiment, and shows an internal configuration cut open. This will be specifically described below.

  The semiconductor device includes a die pad 101, a semiconductor element 102 mounted on the die pad 101, a support lead 103 that supports the die pad 101 in the vicinity of the corner, an internal lead 104 disposed around the die pad 101, and an internal lead 104. The external lead 105 formed continuously is provided. Further, the semiconductor element 102 and the internal lead 104 are electrically connected to each other by a fine metal wire 106 (see FIG. 2A, which will be described later, since illustration is omitted in FIG. 1).

  Further, the die pad 101, the semiconductor element 102, the support lead 103, the internal lead 104, and the fine metal wire 106 are sealed with a resin sealing body 107. However, in FIG. 1, the resin sealing body 107 is cut open to show the internal structure.

  The die pad 101, the support lead 103, the internal lead 104, and the external lead 105 are all made of a Cu alloy. The external lead 105 is bent in a gull wing shape (see FIG. 2A).

  Next, FIG. 2A is a diagram showing a cross section in a plane of cutting the internal lead 104 and the external lead 105 indicated by the aa ′ line in FIG.

  As shown in FIG. 2A, the semiconductor element 102 is fixed on the die pad 101 with an adhesive 108. Although not shown in FIG. 1, the semiconductor element 102 and the internal lead 104 are electrically connected by a thin metal wire 106. The external lead 105 is bent in a gull wing shape.

  Further, one surface of the die pad 101 is exposed as an exposed surface 101a from the resin sealing body 107 formed in a flat plate shape. Further, a resin receiving groove 109 is formed on the outer peripheral portion of the exposed surface 101a.

  Next, FIG. 2B is a diagram showing a cross section taken along the line bb ′ of FIG. This is a cross section of the semiconductor device cut along a diagonal line, and is a cut surface for cutting the support lead 103.

  FIG. 2B shows a state where the die pad 101 is supported by the support lead 103. The support lead 103 is bent toward the exposed surface 101 a in the middle from the outer end of the semiconductor device to the die pad 101, and supports the die pad 101 so that the exposed surface 101 a is exposed from the resin sealing body 107.

  Further, it is shown that the resin receiving groove 109 is formed as a wide corner groove 109a near the corner of the exposed surface 101a. Other components are the same as those in FIG.

  Next, FIG. 2C is a diagram illustrating a state in which the semiconductor device is viewed from the back surface. 2A is a plan view of the semiconductor device viewed in the direction of arrow C in FIG.

  FIG. 2C shows a state where the exposed surface 101 a of the die pad 101 is exposed in a square shape from the resin sealing body 107. A part of the support lead 103 connected near the corner of the exposed surface 101 a is exposed from the resin sealing body 107.

  An annular resin receiving groove 109 having a certain distance from the outer peripheral end of the exposed surface 101a and having no gap is formed at the peripheral edge of the exposed surface 101a. Since the exposed surface 101a has a rectangular shape, the resin receiving groove 109 also has a rectangular shape.

  Furthermore, in the vicinity of the corner of the exposed surface 101a, the width of the resin receiving groove 109 is wider than that of the other portions, forming a corner groove 109a. This is realized by the fact that the outer contour of the corner groove 109a has a right-angled shape, whereas the inner contour has a shape that swells in the direction toward the inner side of the exposed surface 101a. Yes. However, the present invention is not limited to this.

  In addition, external leads 105 are arranged around the resin sealing body 107.

  When the resin sealing body 107 is formed, the resin is injected into the sealing mold while the exposed surface 101a of the die pad 101 is pressed against the sealing mold. At this time, if resin enters between the exposed surface 101a and the sealing mold, a resin thin burr is formed. However, since the resin receiving groove 109 is formed, the resin does not enter inside the resin receiving groove 109.

  In particular, in the vicinity of the corner of the die pad 101, a corner groove 109a having a width wider than that of other portions is formed. More specifically, the outer contour of the corner groove 109a is refracted at a right angle, while the inner contour has a shape in which the corner portion is widened toward the inner side (the central side of the exposed surface 101a). ing. Thereby, the effects described below are realized.

  In the vicinity of the corner of the die pad 101, the support lead 103 is lifted by the molding pressure of the sealing resin, and the force pressing the die pad 101 against the sealing mold is likely to be weakened. Therefore, the resin that enters between the exposed surface 101a and the sealing mold The amount of is likely to increase. However, since the wide corner groove 109a is formed in the vicinity of the corner, it is possible to reliably receive the resin that penetrates more than other portions, and a thin resin burr is generated inside the resin receiving groove 109. Can be prevented.

  In addition, the width of the resin receiving groove 109 is increased only in the vicinity of the corner, and the area for connecting the exposed surface 101a and the printed board by solder or the like when the semiconductor device is mounted on a printed board or the like as a mounting board is large. The decline is kept to a minimum. Therefore, a decrease in heat dissipation from the exposed surface 101a to the printed board is also suppressed.

  As described above, according to the semiconductor device of the first embodiment, it is possible to prevent the formation of a thin resin burr on the exposed surface 101a. For this reason, the process of removing the resin thin burr is unnecessary.

  As a result, it is possible to ensure the heat dissipation of the semiconductor device and to prevent quality deterioration such as deterioration of moisture resistance that occurs in the resin thin burr removing process using chemicals or water jet. Furthermore, the cost required for the resin thin burr removing step is not required, and thus the cost can be reduced.

  As an example of the dimensions of each part, the die pad 101 has a rectangular shape with a side of about 8 mm. On the other hand, the resin receiving groove 109 is formed from a position inside the outer peripheral end of the die pad 101 by about 0.1 to 0.5 mm, and has a width of about 0.1 mm to 0.5 mm. Furthermore, the width of the corner groove 109a is about 0.2 mm to 0.5 mm. However, these dimensions are merely examples, and are not particularly limited, and may be set as appropriate.

(Second Embodiment)
Next, a semiconductor device according to a second embodiment of the present invention will be described with reference to the drawings.

  The semiconductor device of the present embodiment has the planar configuration shown in FIG. 1 like the semiconductor device of the first embodiment. Further, FIG. 3A shows a cross section taken along the line aa ′ in FIG. 1 of the semiconductor device of this embodiment, and FIG. 3B shows a cross section taken along the line bb ′. Furthermore, a back view of the semiconductor device of this embodiment is shown in FIG.

  The configuration shown in FIGS. 3A to 3C is the same as the configuration of the semiconductor device of the first embodiment shown in FIGS. 2A to 2C except for the configuration of the corner groove 109a. . For this reason, about the component which is the same, in FIG.3 (a)-(c), detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol as FIG.2 (a)-(c).

  In the semiconductor device of the second embodiment, as shown in FIG. 3C, the corner portion (corner groove 109a) of the resin receiving groove 109 has a chamfered planar shape. That is, in the case of the first embodiment, the outer contour of the corner groove 109a is refracted once almost at right angles, whereas in the case of the second embodiment, the corner groove 109a. The outer contour of is configured to bend twice at about 45 degrees. As a result, the portion corresponding to the outer corner of the corner groove 109a is narrower than the case where the outline is refracted at a right angle, and is located outside the resin receiving groove 109 by that area. The area of the exposed surface 101a is widened.

  As described above, since the area outside the resin receiving groove 109 on the exposed surface 101a pressed against the sealing mold when performing resin sealing is wider, the resin receiving groove 109 is formed by the sealing forming pressure. The effect which suppresses that sealing resin permeates into the inside becomes high.

  For this reason, the effect of this invention which prevents that a resin thin burr | flash is formed inside the resin receiving groove 109 of the exposed surface 101a is implement | achieved more reliably.

(Third embodiment)
Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to the drawings.

  The semiconductor device of the present embodiment has the planar configuration shown in FIG. 1 like the semiconductor device of the first embodiment. Further, FIG. 4A shows a cross section taken along the line aa ′ in FIG. 1 and FIG. 4B shows a cross section taken along the line bb ′ in FIG. Furthermore, a back view of the semiconductor device of this embodiment is shown in FIG.

  The configuration shown in FIGS. 4A to 4C is the same as the configuration of the semiconductor device of the first embodiment shown in FIGS. 2A to 2C except for the configuration of the corner groove 109a. . For this reason, about the component which is the same, in FIG.4 (a)-(c), detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol as FIG.2 (a)-(c).

  In the semiconductor device of the third embodiment, as shown in FIG. 4C, the corner portion (corner groove 109a) of the resin receiving groove 109 has a planar shape constituted by a curve. That is, in the case of the first embodiment, the outer contour of the corner groove 109a is refracted once almost at a right angle, whereas in the case of the third embodiment, the corner groove 109a. The outer contour of is a smoothly rounded configuration. As a result, the portion corresponding to the outer corner of the corner groove 109a is narrower than the case where the outline is refracted at a right angle, and is located outside the resin receiving groove 109 by that area. The area of the exposed surface 101a is widened.

  As described above, since the area outside the resin receiving groove 109 on the exposed surface 101a pressed against the sealing mold when performing resin sealing is wider, the resin receiving groove 109 is formed by the sealing forming pressure. The effect which suppresses that sealing resin permeates into the inside becomes high.

  Furthermore, since the outer contour of the corner groove 109a is a curve, concentration of sealing formation pressure can be prevented. The concentration of the sealing formation pressure is one of the causes that the resin easily enters the exposed surface 101a. Therefore, by preventing this, the infiltration of the resin can be effectively suppressed.

  For this reason, the effect of this invention which prevents that a resin thin burr | flash is formed inside the resin receiving groove 109 of the exposed surface 101a is implement | achieved more reliably.

(Fourth embodiment)
Next, a semiconductor device according to a fourth embodiment of the present invention will be described with reference to the drawings.

  The semiconductor device of the present embodiment has the planar configuration shown in FIG. 1 like the semiconductor device of the first embodiment. Further, FIG. 5A shows a cross section taken along the line aa ′ in FIG. 1 of the semiconductor device of this embodiment, and FIG. 5B shows a cross section taken along the line bb ′. Further, FIG. 5C shows a back view of the semiconductor device of this embodiment.

  The configuration shown in FIGS. 3A to 3C is the same as the configuration of the semiconductor device according to the first embodiment shown in FIGS. 2A to 2C except for points described later. For this reason, about the same component, in FIG. 5 (a)-(c), detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol as FIG. 2 (a)-(c).

  In the semiconductor device of the fourth embodiment, as shown in FIGS. 5A to 5C, the resin receiving groove 109 is a double groove including a first groove 109x and a second groove 109y. . For this reason, the capacity | capacitance of a groove | channel is large and the penetration | invasion of sealing resin to the inner side rather than the resin receiving groove 109 at the time of resin sealing can be prevented reliably. Here, with respect to at least one of the first groove 109x and the second groove 109y, the groove width is wider than the other part in the vicinity of the corner, and the resin intrusion also occurs in the vicinity of the corner where the resin easily enters. Is surely prevented.

  In addition, by setting it as such a double groove | channel, the effect which prevents the penetration | invasion of resin is high compared with the case where the single wide groove | channel which is wide as a whole is formed. This is because even when a large amount of resin intrusion occurs at a specific position, the flat portion of the die pad that exists in the middle of the double resin receiving groove seals the sealing resin that has entered the outer resin receiving groove. This is because the static pressure can be dispersed.

  Further, the configuration in the vicinity of the corner of the resin receiving groove 109 (first groove 109x and second groove 109y) of the present embodiment is formed by a curve as in the case of the third embodiment. This achieves the effect of suppressing the resin from entering inside the resin receiving groove 109, as in the case of the third embodiment.

  As described above, according to the semiconductor device of the present embodiment, formation of a resin thin burr on the inner side of the exposed surface 101a with respect to the resin receiving groove 109 is suppressed, so that the reliability of the device can be improved and the cost can be reduced.

  The resin receiving groove 109 of the present embodiment is configured by a curve as in the case of the third embodiment, but instead of this, it may be formed in a chamfered shape as in the case of the second embodiment. .

  In the present embodiment, the first groove 109x and the second groove 109y are both annular grooves without interruption. However, instead of this, for example, the second groove 109y which is the inner groove of the two grooves may be formed only near the corner.

(Fifth embodiment)
Next, a semiconductor device according to a fifth embodiment of the present invention will be described with reference to the drawings.

  The semiconductor device of the present embodiment has the planar configuration shown in FIG. 1 like the semiconductor device of the first embodiment. Further, FIG. 6A shows a cross section taken along the line aa ′ in FIG. 1 of the semiconductor device of the present embodiment, and FIG. 6B shows a cross section taken along the line bb ′. Further, FIG. 6C shows a back view of the semiconductor device of this embodiment.

  The configuration shown in FIGS. 6A to 6C is the same as the configuration of the semiconductor device according to the first embodiment shown in FIGS. 2A to 2C except for points described later. For this reason, about the component which is the same, in FIG. 6 (a)-(c), detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol as FIG. 2 (a)-(c).

  The difference between the semiconductor device of the present embodiment and the semiconductor device of the first embodiment is that the outer peripheral end surface 101b of the die pad 101 is inclined as shown in FIG. That is, the outer peripheral end surface 101b of the die pad 101 is formed in a tapered shape in which the area of the exposed surface 101a of the die pad 101 is larger than the area of the opposite surface (surface on which the semiconductor element is mounted).

  Here, the outer peripheral end surface 101b is a side surface of the die pad 101, and is a surface connecting the outer peripheral end of the surface on which the semiconductor element 102 is mounted in the die pad 101 and the outer peripheral end of the exposed surface 101a.

  As described above, as shown in FIG. 6A, when the resin receiving groove 109 is ignored, the cross-sectional shape of the die pad 101 is a trapezoid whose longer side is the exposed surface 101a side.

  In this way, when the resin sealing body 107 is formed, the sealing forming pressure applied perpendicularly to the inclined outer peripheral end surface 101b is applied in the direction in which the die pad 101 is pressed against the sealing mold. That is, the die pad 101 is pressed against the sealing mold by the sealing forming pressure. Thereby, it is possible to suppress the sealing resin from entering the exposed surface 101a of the die pad 101.

  Unlike the case of the present embodiment, when the outer peripheral end surface 101b is not inclined, that is, when it is perpendicular to the exposed surface 101a, the sealing pressure applied to the outer peripheral end surface 101b is applied to the exposed surface 101a. Work in parallel. In this case, the die pad 101 is not pressed against the sealing mold.

  As a result, the formation of thin resin burrs on the exposed surface 101a can be suppressed, and the reliability and cost reduction of the semiconductor device can be realized.

  In the semiconductor device of this embodiment, the resin receiving groove 109 is a wide corner groove 109a in the vicinity of the corner as in the case of the first embodiment. For this reason, as in the semiconductor device of the first embodiment, the effect of preventing the intrusion of the sealing resin into the inside of the exposed surface 101a from the resin receiving groove 109 is realized particularly near the corner. Further, the resin receiving groove 109 may have the same configuration as in the second, third, and fourth embodiments, and by doing so, the respective effects can be realized.

(Sixth embodiment)
Next, a semiconductor device according to a sixth embodiment of the present invention will be described with reference to the drawings.

  7 and 8A to 8C are diagrams illustrating the semiconductor device according to the first embodiment of the present invention.

  FIG. 7 is a diagram showing a planar configuration of the semiconductor device according to the present embodiment, and shows an internal configuration cut open. 8A is a cross section taken along line VIIIa-VIIIa ′ of the semiconductor device of FIG. 7, FIG. 8B is a cross section taken along line VIIIb-VIIIb ′ of the semiconductor device of FIG. 7, and FIG. 9 is a rear view of the semiconductor device (that is, a view seen from the direction of arrow C in FIG. 8A).

  Here, the semiconductor device shown in FIGS. 7 and 8A to 8C is the same as that of the first embodiment shown in FIGS. 1 and 2A to 2C except for points described later. It is the same as the semiconductor device. Therefore, the same components as those in FIGS. 7 and 8A to 8C are denoted by the same reference numerals as those in FIGS. 1 and 2A to 2C, and detailed description thereof is omitted.

  Differences between the semiconductor device of this embodiment and the semiconductor device of the first embodiment will be described below.

  In addition to the configuration of the semiconductor device of the first embodiment, the semiconductor device of this embodiment has a buried portion 110 connected to the outer peripheral end of the die pad 101 as shown in FIG. Further, a hole 111 penetrating the die pad 101 and the buried portion 110 is formed across the die pad 101 and the buried portion 110.

  As shown in FIG. 8A, the buried portion 110 is bent toward the inside of the resin sealing body (the side on which the semiconductor element 102 is mounted) at the connection portion with the die pad 101, and the resin sealing body 107. Embedded in. For this reason, as shown in FIG. 8C, only the protrusion 101 c of the die pad 101 where the die pad 101 is connected to the buried portion 110 is exposed from the resin sealing body 107.

  Here, although the buried portion 110 and the die pad 101 are described as separate members, the buried portion 110 is a part of the die pad 101 and a part of the outer peripheral end of the die pad 101 is extended. You may think. Further, a part of the outer peripheral end portion of such a die pad 101 is bent inside the resin sealing body 107, and the die pad (in this case, the die pad 101 in FIG. 7 is buried in the bent portion (on the folding line). It is considered that a hole penetrating both the portion 110 and the portion 110 is formed as a die pad. This can also be explained. The same applies to the following.

  As described above, by providing the buried portion 110 connected to the die pad 101 and embedded in the resin sealing body 107, the adhesion between the die pad 101 and the resin sealing body 107 is improved. For this reason, the moisture resistance of the semiconductor device is improved.

  Further, since the hole 111 is formed so as to extend over the die pad 101 and the buried portion 110 and pass through the die pad 101 and the buried portion 110, the vapor is generated outside the semiconductor device when the vapor is generated inside the semiconductor device. A route to escape is secured. For this reason, when mounting on a semiconductor device and a printed circuit board etc., it can prevent that a vapor | steam generate | occur | produces in a semiconductor device and the die pad 101 deform | transforms (for example, swells to the exposed surface 101a side). For this reason, the mountability of the semiconductor device is improved.

  As described above, according to the semiconductor device of this embodiment, improvement in moisture resistance and mountability is realized.

  In the semiconductor device of this embodiment, the resin receiving groove 109 shown in FIG. 8C has the same configuration as the resin receiving groove 109 of the semiconductor device of the first embodiment shown in FIG. . However, the same structure as the resin receiving groove 109 in the second, third, and fourth embodiments can be adopted. In such a case, the same effect as described in each embodiment is realized.

(Seventh embodiment)
Next, a lead frame 200 and a semiconductor device manufacturing method using the lead frame 200 according to the seventh embodiment of the present invention will be described with reference to the drawings. Note that the semiconductor device of the sixth embodiment is manufactured by the method of manufacturing a semiconductor device of this embodiment.

  9A and 9B are diagrams showing the configuration of the lead frame 200, where FIG. 9A is a plan view, and FIG. 9B is an IXb-IXb ′ line for showing the unevenness of the lead frame 200. FIG. It is a figure which shows the cross-sectional shape in.

  The lead frame 200 is formed continuously from the die pad 101, the support leads 103 that support the die pad 101 in the vicinity of the corner, the internal leads 104 arranged around the die pad 101, and the internal leads 104 via the dam bar 112. And an outer lead 105.

  Of the plurality of outer leads 105 arranged in four directions, the opposite two-direction arrangement is connected to the inner frame 113, and the other two-direction arrangement and the inner frame 113 of the outer lead 105 are connected to the outer frame 114. It is connected. A guide hole 115 is provided in the outer frame 114.

  A buried part 110 is connected to the outer peripheral end of the die pad 101, and a hole 111 is formed so as to extend over the die pad 101 and the buried part 110.

  One surface of the die pad 101 is a surface on which a semiconductor element is mounted, and the other surface is an exposed surface 101a exposed to the outside of the resin sealing body when resin sealing is performed. Here, a resin receiving groove 109 is formed on the exposed surface 101a, and the resin receiving groove 109 is a corner groove 109a having a width wider than other portions in the vicinity of the corner of the exposed surface 101a.

  Further, as shown in FIG. 9B, the die pad 101 is located so as to protrude from the surface of the lead frame 200 where the internal leads 104 and the like are formed toward the exposed surface 101a. This is realized by bending the support lead 103 toward the exposed surface 101a.

  The buried portion 110 is bent from the die pad 101 to the side opposite to the exposed surface 101a. The bending position is on the hole 111.

  Next, the manufacturing process of the lead frame 200 will be described.

  As a material of the lead frame 200, for example, a Cu alloy thin plate having a thickness of about 0.15 mm is used. The Cu alloy has a relatively good thermal conductivity. By using such a material having a good thermal conductivity, the heat from the die pad 101 can be efficiently transferred. However, it is naturally possible to use a material other than the Cu alloy.

  First, etching processing is performed on a Cu alloy thin plate, which is a material, and the die pad 101, the support lead 103, the inner lead 104, the outer lead 105, the buried portion 110, the dam bar 112, the inner frame 113, the outer frame 114, and the guide hole 115. Are integrally formed. At the same time, a resin receiving groove 109 (including a corner groove 109a) is formed on the exposed surface 101a. At this time, the corner groove 109 a is formed so as to be wider than other portions of the resin receiving groove 109. Furthermore, a hole 111 is also formed at a position straddling the die pad 101 and the buried portion 110.

  Here, in order to make the width of the corner groove 109a wider than the other part of the resin receiving groove 109, the shape of the mask used for etching is changed from the resin receiving groove 109 to the corner groove 109a. What is necessary is just to make it wider than this part. The shape of the corner groove 109a may be a chamfered shape as in the case of the second embodiment, or may be configured by a curve as in the case of the third embodiment. This can be easily realized by setting the shape of the etching mask according to the shape to be obtained.

  Next, plating is performed on at least a part of the internal lead 104. Specifically, a thin metal wire is connected to the internal lead 104 and is electrically connected to a semiconductor element mounted on the die pad 101, but at least such a thin metal wire of the internal lead 104 is connected. Plate the area.

  As the type of plating, Ag plating or Pd plating is used. When using Pd plating, before performing Pd plating, Ni plating is performed as a base to form a barrier metal, thereby preventing Cu contained in the material of the lead frame 200 from diffusing with respect to Pd plating. it can.

  Further, if the Au plating is further performed after the Pd plating, the solder wettability when mounted on a semiconductor device and a printed board can be improved.

  At the end of this step, the lead frame 200 has a planar shape with no part protruding from the Cu alloy thin plate that was the material.

  Next, the support lead 103 is bent at a position close to the die pad 101 (indicated by two lines placed so as to divide the support lead 103), and the die pad 101 protrudes toward the exposed surface 101a. This is called downsetting. The amount to be set down (projecting distance) is set to be slightly larger than the depth of the lower mold of the sealing mold so that the exposed surface 101a can be pressed against the sealing mold when resin sealing is performed. . For example, when the depth of the lower mold of the sealing mold is 0.4 mm, the amount to be downset is about 0.47 mm.

  Next, the buried portion 110 connected to the outer peripheral end of the die pad 101 is bent to the side opposite to the exposed surface 101a at a position passing over the hole 111. Thus, the buried surface 110 is embedded in the resin sealing body 107 by pressing the exposed surface 101a against the sealing mold to perform resin sealing. As a result, the adhesion between the die pad 101 and the resin sealing body 107 is improved, so that the moisture resistance of the semiconductor device is improved.

  Further, since the hole 111 is formed at a position straddling the die pad 101 and the buried portion 110, even if the moisture accumulated inside the resin sealing body 107 is vaporized when the semiconductor device is mounted, It can be easily escaped from the semiconductor device. For this reason, it is possible to avoid deformation such as the die pad 101 bulging due to the pressure of steam. As a result, the mountability of the semiconductor device is improved.

  Through the above steps, the lead frame 200 used in the semiconductor device of this embodiment can be manufactured.

  Next, a method for manufacturing a semiconductor device using the lead frame 200 described above will be described with reference to the drawings.

  FIG. 10 is a process cross-sectional view illustrating a pre-process of the die bonding process, and FIG. 11 is a process cross-sectional view illustrating the die bonding process. Hereinafter, the die bonding process will be described.

  First, as shown in FIG. 10, the lead frame 200 is set on the stage 201, and the adhesive 108 is applied onto the die pad 101 having the lead frame 200 by using a dispenser 202 or the like. As an example, the adhesive 108 may include a silver paste in which Ag powder is mixed with a thermosetting epoxy resin.

  Next, as shown in FIG. 12, the semiconductor element 102 is mounted on the die pad 101 coated with the adhesive 108 using a collet 203. Next, the adhesive 108 is cured by heating on a heat stage (not shown).

  Here, the semiconductor element 102 is formed as a silicon single crystal having a thickness of about 0.2 to 0.4 mm, for example. The condition for curing the adhesive 108 is, for example, heating at 200 to 250 ° C. for 30 to 60 seconds.

  Next, FIG. 12 is a process cross-sectional view for explaining the wire bonding process, and shows a state where the wire bonding process is cut open vertically. Hereinafter, the wire bonding process will be described.

  The lead frame 200 on which the semiconductor element 102 is mounted is installed on the heat stage 204 of the wire bonding apparatus. Although not shown, the heat stage 204 is provided with a vacuum hole, and the die pad 101 can be sucked and fixed. Further, the outer edge portion of the lead frame 200 where wire bonding is performed is fixed using a fixing jig 205.

  In a state where the lead frame 200 is fixed in this manner, the bonding pads 206 which are portions to which the fine metal wires 106 provided on the semiconductor element 102 are connected and the internal leads 104 are electrically connected by the fine metal wires 106. In this way, wire bonding is performed. Here, an Au wire having a diameter of 20 to 35 μm, for example, is used for the metal thin wire 106.

  Next, FIG. 13 is a process cross-sectional view for explaining the resin sealing process, and shows a state in which the lead frame 200 that has been completed up to the wire bonding process is installed in the transfer molding apparatus by being cut vertically.

  First, the configuration of the transfer molding apparatus will be described below.

  As shown in FIG. 13, the transfer molding apparatus includes a pair of sealing molds 207 including an upper mold 207a and a lower mold 207b. Although not shown, the upper mold 207a and the lower mold 207b are clamped by a cylinder device.

  When the upper mold 207a and the lower mold 207b are combined, a cavity 208 is formed by the upper mold cavity 208a and the lower mold cavity 208b.

  The upper mold 207a is provided with a pot 209 for supplying sealing resin, and a plunger 210 is inserted into the pot 209 for advancing and retreating by a cylinder device (not shown) and feeding the molding resin. A cull portion 211 is arranged at a position facing the pot 209 of the lower mold 207b, and a runner portion 212 is provided as a passage for supplying sealing resin from the pot 209 to the cavity 208. More specifically, the runner portion 212 is connected to the lower mold cavity 208 b at the end opposite to the pot 209, and the connection portion is a gate 213.

  Further, an escape portion 214 is formed on the mating surface of the lower die 207b with the upper die 207a so as to escape the thickness of the lead frame 200 that has been completed up to the wire bonding step. The escape portion 214 has a slightly larger planar shape than the lead frame 200 and a thickness slightly smaller than the lead frame 200.

  Although only a portion corresponding to one cavity 208 is shown in FIG. 13, normally, a plurality of resin seals are simultaneously formed by using a sealing mold 207 having a plurality of cavities in the transfer molding apparatus. The stop body 107 can be formed.

  Using the transfer molding apparatus configured as described above, the resin sealing step is performed as follows.

  First, the upper mold 207a and the lower mold 207b of the transfer molding apparatus are heated to, for example, about 180 ° C., the lead frame 200 is mounted by the escape portion 214, and the sealing mold is clamped.

  Next, for example, a resin compressed into a conical shape is supplied from the pot 209. Further, by applying pressure using the plunger 210, resin is injected into the cavity 208 through the cull part 211, the runner part 212, and the gate 213 in this order.

  Thereafter, when the resin is thermally cured to form the resin sealing body 107, the upper mold 207a and the lower mold 207b are opened. Further, the resin sealing body 107 is released by an ejector pin (not shown), and the lead frame 200 formed with the resin sealing is removed from the transfer molding apparatus.

  In this manner, the die pad 101, the semiconductor element 102, the support lead 103, the internal lead 104, the metal thin wire 106, and the like are resin-sealed inside the resin sealing body 107.

  At this time, the die pad 101 is downset slightly larger than the depth of the lower mold 207b (for example, as shown in FIGS. 9A and 9B, the die pad 101 protrudes from the surface of the outer frame 114 toward the exposed surface 101a. Therefore, when the lead frame 200 is set on the sealing mold 207 and clamped, the exposed surface 101a is pressed against the bottom surface of the lower mold 207b. Since the resin is injected in this way, the resin is prevented from entering between the exposed surface 101a and the lower mold 207b, and the resin sealing is performed so that the exposed surface 101a is exposed from the resin sealing body 107. Can do.

  However, a small amount of resin enters between the exposed surface 101a and the lower mold 207b. This is the cause of the formation of resin thin burrs.

  FIG. 14 is a rear view for explaining the resin thin burr formed on the exposed surface 101a. This is a view showing a state in which the resin sealing process for manufacturing the semiconductor device shown in FIG. 8C is completed using the lead frame 200 shown in FIG. The same components as in a) and FIG. 8C are denoted by the same reference numerals in FIG.

  FIG. 14 shows a state in which a thin resin burr 215 is formed outside the resin receiving groove 109 on the exposed surface 101a. The resin that enters from the outer peripheral end of the exposed surface 101 a is received by the resin receiving groove 109, and does not enter the resin receiving groove 109. In particular, a large amount of resin penetrates in the vicinity of the corner of the exposed surface 101a, but the corner groove 109a is a corner groove 109a having a width wider than that of the other portions, and therefore has a large capacity. The resin is prevented from entering inside the groove 109.

  Thereafter, the external leads 105 are packaged by solder plating or the like (not shown). However, when Pd plating is applied to the external lead 105, the exterior by such solder plating or the like is not necessary.

  Subsequently, the dam bar 112 is cut using a cutting device (not shown). A state after cutting the dam bar 112 is shown in FIG. However, FIG. 14 is a back view seen from the exposed surface 101a side of the die pad 101, whereas FIG. 15 is a plan view seen from the opposite side.

  Further, using a lead molding device (not shown), the joint between the tip of the external lead 105 and the inner frame 113 or the outer frame 114 is cut to separate the lead frame 200 from the semiconductor device, and the external lead 105 is formed in a gull wing shape. Bently formed.

  As described above, the semiconductor device according to the sixth embodiment shown in FIGS. 7 and 8A to 8C is manufactured.

  The semiconductor devices according to the first to fifth embodiments can also be manufactured by the same process. However, since the buried portion 110 and the hole 111 are not provided in the semiconductor device according to the first to fifth embodiments, these portions are not formed when the lead frame is formed, and the buried portion The process of bending 110 is not performed.

  In the above description, the exposed surface 101a is exposed in a square shape from the resin sealing body 107. However, the present invention is not limited to this, and the exposed surface 101a may be in other shapes. The effects of the invention can be obtained. For this purpose, the width of the resin receiving groove in the vicinity of the position where the die pad and the support lead are connected should be wider than the width of the resin receiving groove in the other part. This increases the capacity of the resin receiving groove in the vicinity of the connecting portion with the support lead where the thin resin burrs are likely to enter the exposed surface. It is possible to prevent burrs from entering.

  The semiconductor device of the present invention realizes improvement in moisture resistance and mounting reliability and cost reduction in order to suppress the formation of resin thin burrs on the exposed surface of the die pad without degrading heat dissipation. Or it is useful as a semiconductor device used also for household appliances.

It is a top view which shows schematic structure common to the semiconductor device which concerns on the 1st-5th embodiment of this invention. (A)-(c) shows schematic structure of the semiconductor device which concerns on the 1st Embodiment of this invention, (a) is sectional drawing by the aa 'line in FIG. 1, (b) is a figure. Sectional drawing by the bb 'line of 1 and (c) are back views. (A)-(c) shows the schematic structure of the semiconductor device based on the 2nd Embodiment of this invention, (a) is sectional drawing by the aa 'line in FIG. 1, (b) is a figure. Sectional drawing by the bb 'line of 1 and (c) are back views. (A)-(c) shows schematic structure of the semiconductor device based on the 3rd Embodiment of this invention, (a) is sectional drawing by the aa 'line in FIG. 1, (b) is a figure. Sectional drawing by the bb 'line of 1 and (c) are back views. (A)-(c) shows schematic structure of the semiconductor device based on the 4th Embodiment of this invention, (a) is sectional drawing by the aa 'line in FIG. 1, (b) is a figure. Sectional drawing by the bb 'line of 1 and (c) are back views. (A)-(c) shows schematic structure of the semiconductor device which concerns on the 5th Embodiment of this invention, (a) is sectional drawing by the aa 'line in FIG. 1, (b) is a figure. Sectional drawing by the bb 'line of 1 and (c) are back views. It is a top view which shows schematic structure of the semiconductor device which concerns on the 6th Embodiment of this invention. (A)-(c) shows schematic structure of the semiconductor device which concerns on the 6th Embodiment of this invention, (a) is sectional drawing by the VIIIa-VIIIa 'line in FIG. 7, (b) is a figure. Sectional drawing by the VIIIb-VIIIb 'line of 1 and (c) are back views. (A) And (b) is a figure which shows schematic structure of the lead frame which concerns on the 7th Embodiment of this invention, (a) is a top view, (b) is the XIb-XIb 'line | wire in (a). It is sectional drawing by. It is process sectional drawing which shows the pre-process of the die-bonding process in the manufacturing method of the semiconductor device which concerns on the 7th Embodiment of this invention. It is process sectional drawing which shows the die bonding process in the manufacturing method of the semiconductor device which concerns on the 7th Embodiment of this invention. It is process sectional drawing which shows the wire bonding process in the manufacturing method of the semiconductor device which concerns on the 7th Embodiment of this invention. It is process sectional drawing which shows the resin sealing process in the manufacturing method of the semiconductor device which concerns on the 7th Embodiment of this invention. It is a rear view which shows a mode that the resin thin burr | flash has arisen after the resin sealing process in the manufacturing method of the semiconductor device which concerns on the 7th Embodiment of this invention. It is a top view which shows the mode after the cutting process of the dam bar in the manufacturing method of the semiconductor device which concerns on the 7th Embodiment of this invention. (A) And (b) is a figure which shows schematic structure of the semiconductor device of a prior art example, (a) is sectional drawing by the XVIa-XVIa 'line in (b), (b) is a rear view. .

Explanation of symbols

101 Die pad 101a Exposed surface 101b Outer peripheral end surface 101c Protrusion 102 Semiconductor element 103 Support lead 104 Internal lead 105 External lead 106 Metal thin wire 107 Resin sealing body 108 Adhesive 109 Resin receiving groove 109a Corner groove 109x First groove 109y Second Groove 110 buried portion 111 hole 112 dam bar 113 inner frame 114 outer frame 115 guide hole 200 lead frame 201 stage 202 dispenser 203 collet 204 heat stage 205 fixing jig 206 bonding pad 207 sealing mold 207a upper mold 207b lower mold 208 cavity 208a Upper mold cavity 208b Lower mold cavity 209 Pot 210 Plunger 211 Cull part 212 Liner part 213 Gate 214 Relief part 215 Resin thin burr

Claims (9)

A semiconductor device comprising at least a die pad and a semiconductor element mounted on the die pad, and a resin sealing body for sealing the die pad and the semiconductor element formed thereon,
The surface opposite to the element mounting surface on which the semiconductor element is mounted in the die pad is an exposed surface exposed in a square shape from the resin sealing body,
In the peripheral portion of the exposed surface, a resin receiving groove having a shape along the outer peripheral end of the exposed surface is formed,
In the semiconductor device, the width of the bent portion of the resin receiving groove is wider than the width of other portions.   The semiconductor device according to claim 1, wherein a planar shape of the bent portion of the resin receiving groove is a chamfered shape.   The semiconductor device according to claim 1, wherein the planar shape of the bent portion of the resin receiving groove is configured by a curve.   The semiconductor device according to claim 1, wherein the resin receiving groove is formed at least twice.   5. The semiconductor according to claim 1, wherein an outer peripheral end portion of the die pad is formed in a tapered shape in which an area of the exposed surface is larger than an area of the element mounting surface. apparatus   6. The device according to claim 1, wherein at least a part of an outer peripheral end portion of the die pad is bent toward the element mounting surface so as to be embedded inside the resin sealing body. The semiconductor device described.   The semiconductor device according to claim 6, wherein at least one hole penetrating the die pad is formed at a bent portion of the die pad. Forming a lead frame comprising a die pad;
Mounting a semiconductor element on an element mounting surface which is one surface of the die pad;
Sealing the die pad and the semiconductor element with a sealing resin so that an exposed surface that is a surface opposite to the element mounting surface of the die pad is exposed.
The step of forming the lead frame includes a resin receiver having a shape along the outer peripheral edge of the exposed surface at the peripheral edge of the exposed surface of the die pad, and the width of the bent portion is wider than the width of the other portion. A method of manufacturing a semiconductor device comprising a step of forming a groove.   9. The method of manufacturing a semiconductor device according to claim 8, wherein the resin receiving groove formed in the die pad is formed by etching.

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