JP2002184927A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device whose cost can be reduced and manufacture time can be shortened, by stabilizing the flatness of a lead and a pad and saving a work process for removing resin stuck to an exposure face. SOLUTION: A semiconductor chip loading part and the lead of a lead frame are formed on a substrate by using a non-through groove. A semiconductor chip and the like are arranged and are resin-sealed. Then, the non-through groove is pierced and the semiconductor device is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device capable of preventing resin burrs from being formed on exposed surfaces of leads.

[0002]

2. Description of the Related Art In recent years, as semiconductor devices have become smaller and thinner, semiconductor devices having a structure in which a semiconductor chip mounting portion (pad) and leads are exposed on the lower surface of a package have been proposed (see FIG. 6).

A semiconductor device having this structure has been conventionally formed by using a method described below as shown in FIG.

First, a metal substrate is patterned to form leads 3 of a lead frame and semiconductor chip mounting portions (pads) 4 as shown in FIG.

[0005] Then, as shown in FIG. 5 (b), the semiconductor chip 5 is mounted on the semiconductor chip mounting portion 4 via an adhesive such as Ag paste, and the bonding between the electrode 6 of the semiconductor chip 5 and the lead 3 is performed. Bonding with the part 7 using a bonding wire 8 made of Au, Al, or the like;
The semiconductor chip 5 and the leads 3 are electrically connected.

Here, as shown in FIG. 5C, the semiconductor chip mounting portion 4 and the semiconductor chip mounting surface 9 of the leads 3 are formed.
Is sealed with an epoxy resin or the like, and the package 10
To form Thereafter, at the time of resin sealing, the resin burrs 16 formed on the exposed surfaces of the leads 3 and the semiconductor chip mounting portion 4 are removed by blasting or the like by the resin leaking from between the leads or the like to the back surface 11.

Then, as shown in FIG. 5D, the exposed surfaces of the semiconductor chip mounting portion 4 and the leads 3 are exposed, and the exposed surfaces are plated with a noble metal or the like, as shown in FIG. A semiconductor device having a structure in which a semiconductor chip mounting portion and a lead frame are exposed on a lower surface of a package has been manufactured.

[0008]

However, according to the conventional method, a series of assembling steps are performed after the formation of the leads and pads, so that the flatness of the leads and pads is unstable.

Further, since the shapes of the leads and the semiconductor chip mounting portion are formed before the resin sealing step, during the resin sealing step, the resin leaked from between the leads and the like adheres to the exposed surfaces of the leads and pads. However, there has been a problem that it is difficult to perform plating on the exposed surface (see FIG. 7).

For this reason, when performing resin sealing, the exposed surface of the lead is covered with a masking tape or the like to prevent the formation of resin burrs, or the step of removing resin burrs attached to the exposed surface using blasting or the like. For example, a process for preventing or removing resin burrs is required, and it has been difficult to reduce the manufacturing cost and the manufacturing time of the semiconductor device.

Therefore, in the present invention, the flatness of the leads and the pads is stabilized, and the operation step for removing the resin adhering to the exposed surface is omitted, thereby reducing the cost and the manufacturing time. It is an object of the present invention to provide a method of manufacturing a semiconductor device capable of performing the following.

[0012]

According to the method of manufacturing a semiconductor device of the present invention, a predetermined position of a substrate is removed from both surfaces of the substrate by a predetermined amount to form a lead and a semiconductor chip mounting portion surrounded by a non-through groove. Mounting a semiconductor chip on the semiconductor chip mounting portion, and electrically connecting the lead and the semiconductor chip, and sealing the semiconductor chip mounting surface of the substrate with a resin. Forming the leads and the semiconductor chip mounting portion through the non-through grooves after the resin sealing.

In this configuration, since the non-penetrating groove is made to penetrate after the resin sealing, the flatness of the lead and the semiconductor chip mounting portion is stabilized, and the formation of resin burrs can be prevented.

According to the second aspect of the invention, a predetermined position of the substrate is removed from both sides of the substrate by a predetermined amount to form a lead surrounded by a non-through groove, and a semiconductor chip is mounted on the lead. Mounting, and electrically connecting the leads to the semiconductor chip, sealing the semiconductor chip mounting surface of the substrate with a resin, and forming the non-through groove after the resin sealing. And forming the lead by penetrating through.

In this configuration, since the non-through groove is penetrated after resin sealing, formation of resin burrs due to resin leakage from between the leads is prevented, and the flatness of the leads is stabilized. Can be mounted stably.

By using a laser to penetrate the non-penetrating groove, a step of forming and removing a resist on the back surface of the substrate can be omitted.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view showing a manufacturing process of the semiconductor device according to the first embodiment.

First, as shown in FIG. 1A, the semiconductor chip mounting surface 9 of the conductive substrate 1 made of copper and the back surface 11 of the semiconductor chip mounting surface 9 are subjected to half etching, and the non-through grooves 2 are used. The lead 3 of the lead frame and the semiconductor chip mounting portion 4 are processed.

Then, as shown in FIG. 1B, the semiconductor chip 5 is mounted on the semiconductor chip mounting portion 4 via an adhesive such as Ag paste, and the bonding portion 7 between the electrode 6 of the semiconductor chip 5 and the lead 3 is mounted. Are electrically connected via a bonding wire 8 made of Au, Al or the like.

Here, as shown in FIG.
The semiconductor chip mounting surface 9 is resin-encapsulated using an epoxy resin or the like to form a package 10.

After resin sealing, as shown in FIG.
A resist 12 is formed in a region of the back surface 11 of the semiconductor chip mounting surface 9 except for the non-through groove 2.

Then, as shown in FIG. 1E, the non-through groove 2 is etched from the back surface 11 to form a through groove 13, and the lead 3 and the semiconductor chip mounting portion 4 are separated from each other. Form the leads.

Thereafter, as shown in FIG. 1F, the resist 12 is removed, and a semiconductor device is manufactured.

In this embodiment, a through groove is formed by etching after forming a resist.
For example, a method of selectively penetrating the non-penetrating groove using a laser or the like can be used.

Further, in this structure, the steps of forming and removing the resist can be omitted, so that the cost and the manufacturing time can be further reduced.

FIG. 2 is a sectional view showing a semiconductor device manufacturing process according to a second embodiment of the present invention.

First, as shown in FIG. 2A, the semiconductor chip mounting surface 9 of the conductive substrate 1 and the back surface 11 of the semiconductor chip mounting surface 9 are half-etched, and the leads 3 and The semiconductor chip mounting part 4 is shaped.

Then, as shown in FIG. 2B, the semiconductor chip 5 is mounted on the semiconductor chip mounting portion 4 via an adhesive, and the electrodes 6 of the semiconductor chip 5 and the bonding portions 7 of the leads 3 are bonded with bonding wires. 8 for electrical connection.

Here, as shown in FIG.
Of the semiconductor chip mounting surface 9 of the package
To form

After resin sealing, as shown in FIG.
The entire surface of the substrate 1 is etched from the back surface 11 of the semiconductor chip mounting surface 9 to form a through groove 13 as shown in FIG. 2E, and the lead 3 and the semiconductor chip mounting portion 4 are separated and shown in FIG. Not forming each lead.

In this embodiment, the through-groove is formed by etching the entire back surface of the substrate. However, a method of selectively penetrating the non-groove by using a laser or the like may be used. .

FIG. 3 is a sectional view showing a semiconductor device manufacturing process according to a third embodiment in a semiconductor device manufacturing method according to the present invention.

First, as shown in FIG. 3A, the semiconductor chip 5 is placed at a predetermined position on the semiconductor chip mounting surface 9 of the thin plate 14 made of copper to be the semiconductor chip mounting portion 4 with an adhesive.
And bonding wires 6 of electrodes 6 of semiconductor chip 5 and predetermined positions of bonding portions 7 of leads 3 to bonding wires 8
To make electrical connection.

Then, as shown in FIG.
4 is sealed with a resin to form a package 10. As shown in FIG. 3C, the leads 3 and the semiconductor chip mounting portion 4 are electrically conductive from the back surface 11 of the semiconductor chip mounting surface 9. It adheres to the thin plate 14 via the conductive adhesive 15.

Thereafter, as shown in FIG. 3D, the thin plate 14 is etched from the back surface 11 along the leads 3 and the semiconductor chip mounting portion 4 to form a semiconductor device.

Here, it is also possible to use a laser or the like instead of etching to penetrate the non-through groove.

In each of the above embodiments, copper is used as the material of the substrate and the thin plate, but an etchable conductive material such as a Ni—Fe alloy can be used.

Further, as shown in FIG. 4, a semiconductor device having a structure in which a semiconductor chip 5 is mounted on a lead 3 of a lead frame without providing a semiconductor chip mounting portion can also be used.

[0040]

According to the present invention, since the wiring pattern and the semiconductor chip mounting portion are finally separated, the flatness of the lead and the semiconductor chip mounting portion can be stabilized, and the formation of resin burrs can be prevented.

Further, the formation of the lead and the semiconductor chip mounting portion only requires dividing the non-penetrating groove, so that the productivity is good. Further, since the lead can be formed to protrude from the lower surface of the sealing resin, the mounting can be performed. The properties are good.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a manufacturing process of a semiconductor device according to a first embodiment.

FIG. 2 is a sectional view showing a manufacturing process of the semiconductor device according to the second embodiment;

FIG. 3 is a sectional view showing a manufacturing process of a semiconductor device according to a third embodiment;

FIG. 4 is a cross-sectional view illustrating an example of the structure of a semiconductor device according to the present invention.

FIG. 5 is a cross-sectional view showing a manufacturing process of a semiconductor device according to a conventional technique.

FIG. 6 is a cross-sectional view showing a semiconductor device according to a conventional technique.

FIG. 7 is a plan view showing a back surface of a semiconductor device according to a conventional technique.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Conductive board 2 ... Non-through-groove 3 ... Lead 4 ... Semiconductor chip mounting part 5 ... Semiconductor chip 6 ... Electrode 7 ... Bonding part 8 ... Bonding wire 9 ... Semiconductor chip mounting surface 10 ... Package 11 ... Back surface 12 ... Resist 13 ... Through groove 14 ... Thin plate 15 ... Conductive adhesive 16 ... Resin burr

Claims (2)

[Claims] A step of removing a predetermined amount of a predetermined position of the substrate from both surfaces of the substrate to form a lead and a semiconductor chip mounting portion surrounded by a non-through groove; and mounting a semiconductor chip on the semiconductor chip mounting portion. And electrically connecting the lead and the semiconductor chip; sealing the semiconductor chip mounting surface of the substrate with a resin; and sealing the non-through groove after the resin sealing. Forming the lead and the semiconductor chip mounting portion by penetrating the semiconductor device. A step of removing a predetermined position of the substrate from both sides of the substrate by a predetermined amount to form a lead surrounded by a non-through groove; mounting a semiconductor chip on the lead; A step of electrically connecting to a semiconductor chip; a step of resin sealing the semiconductor chip mounting surface of the substrate using a resin; and after the resin sealing, forming the leads by penetrating the non-through groove. Semiconductor device manufacturing method.