JP2006128594A5 - - Google Patents

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Publication number
JP2006128594A5
JP2006128594A5 JP2005030972A JP2005030972A JP2006128594A5 JP 2006128594 A5 JP2006128594 A5 JP 2006128594A5 JP 2005030972 A JP2005030972 A JP 2005030972A JP 2005030972 A JP2005030972 A JP 2005030972A JP 2006128594 A5 JP2006128594 A5 JP 2006128594A5
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JP
Japan
Prior art keywords
memory device
voltage
semiconductor memory
region
type well
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JP2005030972A
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English (en)
Japanese (ja)
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JP2006128594A (ja
JP4522879B2 (ja
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Priority to JP2005030972A priority Critical patent/JP4522879B2/ja
Priority claimed from JP2005030972A external-priority patent/JP4522879B2/ja
Publication of JP2006128594A publication Critical patent/JP2006128594A/ja
Publication of JP2006128594A5 publication Critical patent/JP2006128594A5/ja
Application granted granted Critical
Publication of JP4522879B2 publication Critical patent/JP4522879B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005030972A 2005-02-07 2005-02-07 不揮発性半導体記憶装置 Expired - Fee Related JP4522879B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005030972A JP4522879B2 (ja) 2005-02-07 2005-02-07 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005030972A JP4522879B2 (ja) 2005-02-07 2005-02-07 不揮発性半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004318333 Division 2004-11-01 2004-11-01

Publications (3)

Publication Number Publication Date
JP2006128594A JP2006128594A (ja) 2006-05-18
JP2006128594A5 true JP2006128594A5 (enrdf_load_stackoverflow) 2008-03-27
JP4522879B2 JP4522879B2 (ja) 2010-08-11

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ID=36722917

Family Applications (1)

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JP2005030972A Expired - Fee Related JP4522879B2 (ja) 2005-02-07 2005-02-07 不揮発性半導体記憶装置

Country Status (1)

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JP (1) JP4522879B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7505325B2 (en) * 2006-09-28 2009-03-17 Chingis Technology Corporation Low voltage low capacitance flash memory array
JP5059437B2 (ja) 2007-02-06 2012-10-24 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置
JP2008257783A (ja) 2007-04-03 2008-10-23 Spansion Llc 不揮発性記憶装置、不揮発性記憶システムおよび不揮発性記憶装置の制御方法
JP5684966B2 (ja) * 2007-10-09 2015-03-18 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその製造方法
US8492826B2 (en) 2007-10-09 2013-07-23 Genusion, Inc. Non-volatile semiconductor memory device and manufacturing method thereof
US8339862B2 (en) 2007-12-25 2012-12-25 Genusion, Inc. Nonvolatile semiconductor memory device
US8559229B2 (en) 2010-09-30 2013-10-15 Samsung Electronics Co., Ltd. Flash memory device and wordline voltage generating method thereof
JP5853853B2 (ja) 2012-05-09 2016-02-09 富士通セミコンダクター株式会社 半導体記憶装置及びその駆動方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291332A (ja) * 1993-04-06 1994-10-18 Nippon Steel Corp 半導体記憶装置及びその使用方法
JP3878681B2 (ja) * 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US5687118A (en) * 1995-11-14 1997-11-11 Programmable Microelectronics Corporation PMOS memory cell with hot electron injection programming and tunnelling erasing
JP2000307088A (ja) * 1999-03-31 2000-11-02 Lucent Technol Inc 電気的消去可能リードオンリメモリデバイス
JP2001102553A (ja) * 1999-09-29 2001-04-13 Sony Corp 半導体装置、その駆動方法および製造方法
JP2002118184A (ja) * 2000-10-11 2002-04-19 Sony Corp 不揮発性半導体記憶装置の動作方法
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
JP4696383B2 (ja) * 2001-03-28 2011-06-08 ソニー株式会社 不揮発性半導体記憶装置の製造方法

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