JP2006114732A - 半導体装置及びその製造方法、並びに半導体モジュール - Google Patents

半導体装置及びその製造方法、並びに半導体モジュール Download PDF

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JP2006114732A
JP2006114732A JP2004301225A JP2004301225A JP2006114732A JP 2006114732 A JP2006114732 A JP 2006114732A JP 2004301225 A JP2004301225 A JP 2004301225A JP 2004301225 A JP2004301225 A JP 2004301225A JP 2006114732 A JP2006114732 A JP 2006114732A
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semiconductor
semiconductor substrate
conductor layer
substrate
region
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JP2004301225A
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English (en)
Japanese (ja)
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JP2006114732A5 (enExample
Inventor
Kenichi Tanaka
健一 田中
Hidetoshi Matsumoto
秀俊 松本
Isao Obe
功 大部
Kazuhiro Mochizuki
和浩 望月
Tomonori Tagami
知紀 田上
Chisaki Takubo
千咲紀 田窪
Hiroyuki Uchiyama
博幸 内山
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2004301225A priority Critical patent/JP2006114732A/ja
Priority to US11/247,234 priority patent/US7547929B2/en
Publication of JP2006114732A publication Critical patent/JP2006114732A/ja
Publication of JP2006114732A5 publication Critical patent/JP2006114732A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004301225A 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール Pending JP2006114732A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004301225A JP2006114732A (ja) 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール
US11/247,234 US7547929B2 (en) 2004-10-15 2005-10-12 Semiconductor HBT MMIC device and semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004301225A JP2006114732A (ja) 2004-10-15 2004-10-15 半導体装置及びその製造方法、並びに半導体モジュール

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JP2006114732A true JP2006114732A (ja) 2006-04-27
JP2006114732A5 JP2006114732A5 (enExample) 2007-02-01

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US (1) US7547929B2 (enExample)
JP (1) JP2006114732A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038951A (ja) * 2010-08-09 2012-02-23 Mitsubishi Electric Corp 半導体装置、半導体回路基板および半導体回路基板の製造方法
JP2013516058A (ja) * 2009-12-23 2013-05-09 ユナイティッド モノリスィック セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子デバイスの製造方法および該方法により製造された電子デバイス

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007003182B4 (de) * 2007-01-22 2019-11-28 Snaptrack Inc. Elektrisches Bauelement
US8860092B1 (en) * 2008-09-22 2014-10-14 Hrl Laboratories, Llc Metallic sub-collector for HBT and BJT transistors
US10515872B1 (en) 2008-09-22 2019-12-24 Hrl Laboratories, Llc Metallic sub-collector for HBT and BJT transistors
JP4833307B2 (ja) * 2009-02-24 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法
JP2014187354A (ja) * 2013-02-21 2014-10-02 Ricoh Co Ltd デバイス、及びデバイスの作製方法
JP2021197473A (ja) * 2020-06-16 2021-12-27 株式会社村田製作所 半導体装置
CN114334918A (zh) * 2021-12-28 2022-04-12 厦门市三安集成电路有限公司 混合单片微波集成电路及其制作方法

Citations (3)

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JPH0421203A (ja) * 1990-05-16 1992-01-24 Nec Corp モノリシックマイクロ波ミリ波アレイアンテナモジュール
JP2000277530A (ja) * 1999-03-25 2000-10-06 Hitachi Ltd 半導体装置及びその製造方法
JP2004088062A (ja) * 2002-05-20 2004-03-18 Sumitomo Electric Ind Ltd ドライエッチング方法、ドライエッチング装置及び半導体装置の製造方法

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US4505799A (en) * 1983-12-08 1985-03-19 General Signal Corporation ISFET sensor and method of manufacture
JPH06204449A (ja) 1992-12-28 1994-07-22 Fujitsu Ltd 光検知装置およびその製造方法
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US5696466A (en) * 1995-12-08 1997-12-09 The Whitaker Corporation Heterolithic microwave integrated impedance matching circuitry and method of manufacture
JP3347145B2 (ja) * 1996-09-26 2002-11-20 サムソン・エレクトロニクス・カンパニー・リミテッド マイクロ波ハイブリッド集積回路
JP4328887B2 (ja) 1999-07-05 2009-09-09 竹中エンジニアリング株式会社 移動物体検出装置
US6856004B2 (en) * 2001-07-10 2005-02-15 Anadigics, Inc. Compact layout for a semiconductor device
JP4216634B2 (ja) * 2003-04-23 2009-01-28 株式会社日立製作所 半導体装置
US7230318B2 (en) * 2003-12-24 2007-06-12 Agency For Science, Technology And Research RF and MMIC stackable micro-modules

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH0421203A (ja) * 1990-05-16 1992-01-24 Nec Corp モノリシックマイクロ波ミリ波アレイアンテナモジュール
JP2000277530A (ja) * 1999-03-25 2000-10-06 Hitachi Ltd 半導体装置及びその製造方法
JP2004088062A (ja) * 2002-05-20 2004-03-18 Sumitomo Electric Ind Ltd ドライエッチング方法、ドライエッチング装置及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013516058A (ja) * 2009-12-23 2013-05-09 ユナイティッド モノリスィック セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子デバイスの製造方法および該方法により製造された電子デバイス
JP2012038951A (ja) * 2010-08-09 2012-02-23 Mitsubishi Electric Corp 半導体装置、半導体回路基板および半導体回路基板の製造方法

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US7547929B2 (en) 2009-06-16

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