JP2006106118A5 - - Google Patents
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- Publication number
- JP2006106118A5 JP2006106118A5 JP2004289069A JP2004289069A JP2006106118A5 JP 2006106118 A5 JP2006106118 A5 JP 2006106118A5 JP 2004289069 A JP2004289069 A JP 2004289069A JP 2004289069 A JP2004289069 A JP 2004289069A JP 2006106118 A5 JP2006106118 A5 JP 2006106118A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- forming
- semiconductor
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 276
- 239000004065 semiconductor Substances 0.000 claims 72
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 239000011241 protective layer Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 238000000059 patterning Methods 0.000 claims 12
- 238000007599 discharging Methods 0.000 claims 9
- 239000004020 conductor Substances 0.000 claims 8
- 238000002425 crystallisation Methods 0.000 claims 8
- 230000008025 crystallization Effects 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 8
- 230000001737 promoting effect Effects 0.000 claims 8
- 239000004973 liquid crystal related substance Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- -1 osnium Chemical compound 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004289069A JP4698998B2 (ja) | 2004-09-30 | 2004-09-30 | 液晶表示装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004289069A JP4698998B2 (ja) | 2004-09-30 | 2004-09-30 | 液晶表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006106118A JP2006106118A (ja) | 2006-04-20 |
| JP2006106118A5 true JP2006106118A5 (enExample) | 2007-11-08 |
| JP4698998B2 JP4698998B2 (ja) | 2011-06-08 |
Family
ID=36375965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004289069A Expired - Fee Related JP4698998B2 (ja) | 2004-09-30 | 2004-09-30 | 液晶表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4698998B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008176095A (ja) * | 2007-01-19 | 2008-07-31 | Semiconductor Energy Lab Co Ltd | パターン形成方法及び薄膜トランジスタの作製方法 |
| JP5357493B2 (ja) | 2007-10-23 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5525224B2 (ja) * | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| KR101751560B1 (ko) * | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102714029B (zh) * | 2010-01-20 | 2016-03-23 | 株式会社半导体能源研究所 | 显示装置的显示方法 |
| JP2014120527A (ja) * | 2012-12-13 | 2014-06-30 | Shi Exaination & Inspection Ltd | 半導体装置の製造方法、及び半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3464287B2 (ja) * | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4656685B2 (ja) * | 1999-01-14 | 2011-03-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3420135B2 (ja) * | 1999-10-26 | 2003-06-23 | 日本電気株式会社 | アクティブマトリクス基板の製造方法 |
| TW456048B (en) * | 2000-06-30 | 2001-09-21 | Hannstar Display Corp | Manufacturing method for polysilicon thin film transistor liquid crystal display panel |
| JP2002324808A (ja) * | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4141138B2 (ja) * | 2001-12-21 | 2008-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7118943B2 (en) * | 2002-04-22 | 2006-10-10 | Seiko Epson Corporation | Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment |
| JP4781066B2 (ja) * | 2004-09-30 | 2011-09-28 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
-
2004
- 2004-09-30 JP JP2004289069A patent/JP4698998B2/ja not_active Expired - Fee Related
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