JP4698998B2 - 液晶表示装置の作製方法 - Google Patents

液晶表示装置の作製方法 Download PDF

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Publication number
JP4698998B2
JP4698998B2 JP2004289069A JP2004289069A JP4698998B2 JP 4698998 B2 JP4698998 B2 JP 4698998B2 JP 2004289069 A JP2004289069 A JP 2004289069A JP 2004289069 A JP2004289069 A JP 2004289069A JP 4698998 B2 JP4698998 B2 JP 4698998B2
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layer
electrode layer
semiconductor
forming
semiconductor layer
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Japanese (ja)
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JP2006106118A (ja
JP2006106118A5 (enExample
Inventor
舜平 山崎
厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2006106118A5 publication Critical patent/JP2006106118A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004289069A 2004-09-30 2004-09-30 液晶表示装置の作製方法 Expired - Fee Related JP4698998B2 (ja)

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JP2004289069A JP4698998B2 (ja) 2004-09-30 2004-09-30 液晶表示装置の作製方法

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JP2004289069A JP4698998B2 (ja) 2004-09-30 2004-09-30 液晶表示装置の作製方法

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JP2006106118A JP2006106118A (ja) 2006-04-20
JP2006106118A5 JP2006106118A5 (enExample) 2007-11-08
JP4698998B2 true JP4698998B2 (ja) 2011-06-08

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008176095A (ja) * 2007-01-19 2008-07-31 Semiconductor Energy Lab Co Ltd パターン形成方法及び薄膜トランジスタの作製方法
JP5357493B2 (ja) 2007-10-23 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5525224B2 (ja) * 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101751560B1 (ko) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
JP2014120527A (ja) * 2012-12-13 2014-06-30 Shi Exaination & Inspection Ltd 半導体装置の製造方法、及び半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3464287B2 (ja) * 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4656685B2 (ja) * 1999-01-14 2011-03-23 株式会社半導体エネルギー研究所 半導体装置
JP3420135B2 (ja) * 1999-10-26 2003-06-23 日本電気株式会社 アクティブマトリクス基板の製造方法
TW456048B (en) * 2000-06-30 2001-09-21 Hannstar Display Corp Manufacturing method for polysilicon thin film transistor liquid crystal display panel
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4141138B2 (ja) * 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7118943B2 (en) * 2002-04-22 2006-10-10 Seiko Epson Corporation Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment
JP4781066B2 (ja) * 2004-09-30 2011-09-28 株式会社半導体エネルギー研究所 表示装置の作製方法

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