JP2006100821A - 選択可能キャパシタンス回路 - Google Patents
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Abstract
【解決手段】
電圧によって制御されるキャパシタについて及び該キャパシタを形成するための方法について説明されている。該電圧によって制御されるキャパシタの機械的導体膜は、第1の位置及び第2の位置まで移動可能でありさらに第1の位置及び第2の位置から移動可能である。キャパシタンス量は、該機械的導体膜の移動に応じて変化することができる。微小電気機械(MEMS)電圧によって制御されるキャパシタは、様々な用途(例えば、RFスイッチ及びRF減衰器、等であるがこれらの用途に限定するものではない)において使用することができる。
【選択図】 図7D
Description
1つの実施形態においては、ドライバコントローラ29、アレイドライバ22、及びアレイ30は、本出願明細書において説明されているあらゆる型のディスプレイに関して適している。例えば、1つの実施形態においては、ドライバコントローラ29は、従来のディスプレイコントローラ又は双安定表示ディスプレイコントローラ(例えば、インターフェロメトリックモジュレータコントローラ、等)である。もう1つの実施形態においては、アレイドライバ22は、従来のドライバ又は双安定表示ディスプレイドライバ(インターフェロメトリックモジュレータディスプレイ、等)である。1つの実施形態においては、ドライバコントローラ29は、アレイドライバ22と一体化されている。該1つの実施形態は、携帯電話、腕時計、及びその他の小型ディスプレイ等のような高度に一体化されたシステムにおいて共通する実施形態である。さらに別の実施形態においては、アレイ30は、典型的なディスプレイアレイ又は双安定表示ディスプレイアレイ(インターフェロメトリックモジュレータアレイを含むディスプレイ、等)である。
Claims (60)
- 選択可能なキャパシタンス量を有する装置であって、
少なくとも2つの電極であって、前記少なくとも2つの電極のうちの少なくとも1方は、前記少なくとも2つの電極の間に規定された間隙を調整可能にするために他方の電極に関して制御可能な形で移動可能であり、前記電極のうちの少なくとも1方は、RF信号を搬送する少なくとも2つの電極と、
前記少なくとも2つの電極の間に配置されるとともに、前記電極のうちの少なくとも1方に電圧を供給するように構成されている、装置。 - 2つの電極の間に選択的にDCバイアスを印加するように構成された回路をさらに具備し、前記回路が前記2つの電極の間における前記間隙の大きさを調整するようにするために、前記2つの電極のうちの少なくとも一方は、移動可能な電極である、請求項1に記載の装置。
- 前記少なくとも2つの電極と電気的に通じているプロセッサであって、データを処理するように構成されたプロセッサと、
前記プロセッサと電気的に通じているメモリデバイスと、を具備する、請求項1に記載の装置。 - 少なくとも1つの信号を前記少なくとも2つの電極に送るように構成されたドライバ回路をさらに具備する、請求項3に記載の装置。
- 前記データの少なくとも一部分を前記ドライバ回路に伝送するように構成されたコントローラをさらに具備する、請求項4に記載の装置。
- 前記データを前記プロセッサに伝送するように構成されたデータソースモジュールをさらに具備する、請求項3に記載の装置。
- 前記データソースモジュールは、受信機、トランシーバ、及び送信機のうちの少なくとも1つを具備する、請求項6に記載の装置。
- 入力データを受け取りさらに前記入力データを前記プロセッサに伝達するように構成された入力デバイスをさらに具備する、請求項3に記載の装置。
- 選択可能なキャパシタンス量を有するキャパシタであって、
RF信号を搬送するための手段であって、制御可能な形で調整可能な間隙を有する搬送手段と、
前記搬送するための手段の少なくとも一部分に電圧を供給するための手段と、を具備するキャパシタ。 - 前記搬送するための手段は、少なくとも2つの電極を具備し、前記少なくとも2つの電極のうちの一方は、他方に関して移動可能である、請求項9に記載のキャパシタ。
- 前記電圧を供給するための手段は、前記搬送するための手段の移動可能な部分に隣接して配置された1つ以上の柱を具備する、請求項9に記載のキャパシタ。
- 前記搬送するための手段は、変形可能な膜を具備する、請求項9に記載のキャパシタ。
- 前記搬送するための手段は、DCバイアスを選択的に印加するように構成された回路をさらに具備する、請求項12に記載のキャパシタ。
- 前記搬送するための手段は、RF信号を搬送するように構成された伝導ラインと伝導膜との間に複数の間隙を具備する、請求項13に記載のキャパシタ。
- 前記搬送するための手段は、DCバイアスを選択するための手段と、前記DCバイアスを前記少なくとも2つの電極に印加するための手段と、をさらに具備する、請求項13に記載のキャパシタ。
- 前記選択するための手段は、プロセッサ又は論理回路を具備する、請求項15に記載のキャパシタ。
- 前記印加するための手段は、スイッチを具備する、請求項16に記載のキャパシタ。
- キャパシタンスを選択する方法であって、
少なくとも2つの電極の間の間隙を調整することであって、前記少なくとも2つの電極のうちの少なくとも一方はRF信号を搬送することと、
前記少なくとも一方の電極に電圧を印加すること、とを具備する方法。 - 前記間隙を調整することは、DCバイアスを選択することと、前記DCバイアスを前記少なくとも2つの電極に印加すること、とをさらに具備する、請求項18に記載の方法。
- 前記間隙を調整することは、前記RF信号を搬送するように構成された伝導ラインと複数の電極との間における複数の間隙を調整することを具備する、請求項18に記載の方法。
- 選択可能キャパシタンスを有するキャパシタを製造する方法であって、
第1の電極を形成することと、
第2の電極を形成することであって、前記第2の電極は、前記第1の電極と前記第2の電極との間における定められた間隙を調整可能にするために前記第1の電極に関して移動可能にすることと、
少なくとも前記第2の電極に電圧を供給するように構成された複数の柱を形成することであって、前記柱は前記電極の間に配置されていること、とを具備する方法。 - 透明でない材料から前記第1の電極を形成することをさらに具備する、請求項21に記載の方法。
- 請求項21に記載の方法に従って製造されたキャパシタ。
- RFデバイスであって、
RF信号を搬送するための第1の導体と、
前記第1の導体から所定の間隔をもたせて配置された変形可能膜であって、前記RF信号を選択的にフィルタリングするように構成されておりさらに前記RF信号を選択的にフィルタリングするための少なくとも3つの個別の作動可能な位置を有する変形可能膜と、を具備するRFデバイス。 - 前記変形可能膜は、単一の膜を具備する、請求項24に記載のRFデバイス。
- 前記変形可能膜は、2つ以上の別個の膜を具備する、請求項24に記載のRFデバイス。
- 選択可能キャパシタンスを有するキャパシタであって、
基板アセンブリと、
前記基板アセンブリ上の信号導体であって、前記キャパシタに関する第1の電極を形成する信号導体と、
前記信号導体の少なくとも上面を被覆する誘電材料層と、
1つ以上の機械的導体膜であって、前記基板アセンブリと前記1つ以上の機械的導体膜との間に前記信号導体を配置するために該基板アセンブリの上方において所定の間隔をもたせて配置された1つ以上の機械的導体膜と、を含み、前記1つ以上の機械的導体膜は、前記キャパシタに関する第2の電極を形成しており、前記1つ以上の機械的導体膜の少なくとも2つ以上の部分は、低キャパシタンス位置及び高キャパシタンス位置から少なくとも部分的に独立して移動することが可能であり、該達成可能な位置は、該機械的導体膜の少なくとも選択された2つの部分に関する個別の第1のキャパシタンス位置と、前記機械的導体膜の前記選択された2つの部分に関する個別の第2のキャパシタンス位置であって、前記個別の第1のキャパシタンス位置よりも多量のキャパシタンスを有する個別の第2のキャパシタンス位置と、前記個別の第1のキャパシタンス位置よりもキャパシタンス量が多いが前記個別の第2のキャパシタンス位置よりもキャパシタンス量が少ない個別の第3のキャパシタンス構成と、を含み、前記個別の第3のキャパシタンス構成において、前記選択された2つの部分のうちの1方は、前記個別の第2のキャパシタンス位置にあり、他方は、前記個別の第1のキャパシタンス位置にあり、前記選択された位置は、少なくとも部分的には前記信号導体における電圧によって決定される、キャパシタをさらに具備する、請求項24に記載のRFデバイス。 - 少なくとも2つ以上の部分は、前記機械的導体膜の単一の連続的セグメントに対応しており、前記2つ以上の部分は、(a)前記基板アセンブリと前記機械的導体膜の前記セグメントとの間に配置された柱が存在するか又は存在していない、(b)柱の高さが異なる、(c)柱間の間隔が異なる、又は(d)これらの項目の組合せ、のうちの少なくとも1つに基づいて異なっている、請求項27に記載のRFデバイス。
- 前記1つ以上の機械的導体膜の少なくとも2つ以上の部分は、前記機械的導体膜のうちで信号アースに結合された共通の電極を形成する別個のセグメントに対応しており、前記別個のセグメントは、互いにDC隔離されておりさらに前記別個のセグメントを独立して制御するための別個のバイアスに結合されている、請求項27に記載のRFデバイス。
- 複数の信号導体及び前記機械的導体膜の複数の多重セグメントは、ロー及びコラムの形で配列されている、請求項27に記載のRFデバイス。
- 前記第1の導体及び前記変形可能膜のうちの少なくとも1つと電気的に通じているプロセッサであって、データを処理するように構成されているプロセッサと、
前記プロセッサと電気的に通じているメモリデバイスと、をさらに具備する、請求項24に記載のRFデバイス。 - 前記第1の導体及び前記変形可能膜のうちの少なくとも1つに少なくとも1つの信号を送るように構成されたドライバ回路をさらに具備する、請求項31に記載のRFデバイス。
- 前記データのうちの少なくとも一部分を前記ドライバ回路に伝送するように構成されたコントローラをさらに具備する、請求項32に記載のRFデバイス。
- 前記データを前記プロセッサに伝送するように構成されたデータソースモジュールをさらに具備する、請求項31に記載のRFデバイス。
- 前記データソースモジュールは、受信機、トランシーバ、及び送信機のうちの少なくとも1つを具備する、請求項34に記載のRFデバイス。
- 入力データを受け取りさらに前記入力データを前記プロセッサに伝達するように構成された入力デバイスをさらに具備する、請求項31に記載のRFデバイス。
- RF信号を搬送するための手段と、
前記RF信号をフィルタリングするための手段であって、前記RF信号を選択的にフィルタリングするために3つの個別の作動可能な位置のうちの少なくとも1つの位置まで変形可能であるフィルタリングするための手段と、をさらに具備する、RFデバイス。 - 前記搬送するための手段は、伝導ラインを具備する、請求項37に記載のRFデバイス。
- 前記フィルタリングするための手段は、1つ以上の変形可能膜のうちで2つ以上の少なくとも部分的に独立して作動させることが可能な部分を具備する、請求項38に記載のRFデバイス。
- 前記フィルタリングするための手段は、前記少なくとも2つの作動可能な部分が独立して作動されるように構成されている、請求項39に記載のRFデバイス。
- RF信号をフィルタリングする方法であって、
前記RF信号を伝導ラインで搬送することと、
前記RF信号を選択的にフィルタリングするための少なくとも3つの個別の作動可能な位置を有する変形可能膜を用いて前記RF信号を選択的にフィルタリングすることであって、前記変形可能膜は、前記伝導ラインに隣接すること、とを具備する方法。 - 選択的にフィルタリングすることは、1つ以上の変形可能膜のうちの2つ以上の少なくとも部分的に独立して作動される部分を作動させることを具備する、請求項41に記載の方法。
- 選択可能キャパシタンスを有するRFデバイスを製造する方法であって、
RF信号を搬送するための第1の導体を形成することと、
前記第1の導体から所定の間隔をもたせて配置された変形可能膜を形成することであって、前記変形可能膜は、前記RF信号を選択的にフィルタリングするように構成されており、さらに、前記変形可能膜は、前記RF信号を選択的にフィルタリングするための少なくとも3つの個別の作動可能な位置を有すること、とを具備する方法。 - 基板アセンブリを形成することと、
前記第1の導体を前記基板アセンブリ上に形成することと、
前記第1の導体の少なくとも上面を被覆する誘電材料層を形成することと、
変形可能膜を形成することであって、前記変形可能膜は、前記第1の導体が前記基板アセンブリと前記変形可能膜との間に配置されるように前記基板アセンブリの上方に配置されること、とをさらに具備する、請求項43に記載の方法。 - 前記変形可能膜は、機械的導体膜の単一の連続セグメントに対応する、請求項44に記載の方法。
- 前記変形可能膜のうちの少なくとも2つ以上のセグメントを形成することをさらに具備し、前記別個のセグメントは、互いにDC隔離されておりさらに前記別個のセグメントを独立して制御するために別個のバイアスに結合されている、請求項44に記載の方法。
- 請求項43に記載の方法に従って製造されたRFデバイス。
- 電圧によって制御されるキャパシタであって、
入力端子、制御端子、及び電圧基準端子を有する基板アセンブリと、
前記基板アセンブリ上に配置された電圧基準ラインであって、前記電圧基準ラインのうちの1つ以上が前記電圧基準端子に結合されている電圧基準ラインと、
前記基板アセンブリの上方に所定の間隔で配置されておりさらに反対側の端部が前記電圧基準ラインのうちの1つ以上に結合されている機械的導体膜と、
前記基板アセンブリと前記機械的導体膜との間に配置された1つ以上の柱であって、前記機械的導体膜を支える1つ以上の柱と、
前記基板アセンブリ上に配置された信号導体であって、前記制御端子における電圧は、前記機械的導体膜の位置を少なくとも部分的に制御する信号導体と、
前記信号導体の最上面と前記機械的導体膜との間に配置された誘電材料層と、
第1の端子及び第2の端子を有する結合キャパシタであって、前記第1の端子は、前記入力端子に結合されており、前記第2の端子は、前記信号導体に結合されている結合キャパシタと、を具備するキャパシタ。 - 前記信号導体は、透明でない材料を具備する、請求項48に記載のキャパシタ。
- 前記信号導体に関する材料は、銀、銅、金、アルミニウム、またはこれらの材料の組合せのうちの少なくとも1つを具備する、請求項48に記載のキャパシタ。
- 前記信号導体に関する材料は、1x10−6オーム−メートル(Ω−m)未満の抵抗率を有する、請求項48に記載のキャパシタ。
- 前記信号導体に関する材料は、0.1x10−6オーム−メートル(Ω−m)未満の抵抗率を有する、請求項48に記載のキャパシタ。
- 前記誘電材料層は、前記信号層の最上面に直接配置されている、請求項48に記載のキャパシタ。
- 前記機械的導体膜の少なくとも1つの端部と対応する電圧基準ラインとの間に配置された絶縁体をさらに具備する、請求項48に記載のキャパシタ。
- 前記電圧基準ラインは、信号アースに対応するが、DCバイアスを有するように構成されている、請求項54に記載のキャパシタ。
- 前記電圧基準端子は、信号アース基準に結合させるように構成されている、請求項48に記載のキャパシタ。
- 前記信号導体のうちの前記入力端子と反対側の端部に結合された出力端子をさらに具備する、請求項48に記載のキャパシタ。
- 前記キャパシタは、RF減衰器内において具体化されている、請求項48に記載のキャパシタ。
- 前記信号導体の前記最上面と前記機械的導体膜との間に配置された前記誘電材料層は、0.1乃至0.5マイクロメートルの範囲内の厚さを有する、請求項48に記載のキャパシタ。
- 前記信号導体は、0.5乃至5マイクロメートルの範囲内の厚さを有する、請求項48に記載のキャパシタ。
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2005
- 2005-08-30 US US11/216,955 patent/US7653371B2/en not_active Expired - Fee Related
- 2005-09-14 EP EP05255643A patent/EP1645902A3/en not_active Withdrawn
- 2005-09-20 AU AU2005211602A patent/AU2005211602A1/en not_active Abandoned
- 2005-09-21 TW TW094132578A patent/TW200625356A/zh unknown
- 2005-09-22 SG SG200506123A patent/SG121171A1/en unknown
- 2005-09-22 SG SG200906405-6A patent/SG155978A1/en unknown
- 2005-09-22 CA CA002520457A patent/CA2520457A1/en not_active Abandoned
- 2005-09-22 JP JP2005275828A patent/JP2006100821A/ja not_active Withdrawn
- 2005-09-26 MX MXPA05010307A patent/MXPA05010307A/es not_active Application Discontinuation
- 2005-09-27 KR KR1020050089958A patent/KR101238242B1/ko not_active IP Right Cessation
- 2005-09-27 BR BRPI0503905-3A patent/BRPI0503905A/pt not_active Application Discontinuation
-
2008
- 2008-02-28 JP JP2008047756A patent/JP2008147707A/ja active Pending
-
2010
- 2010-01-22 US US12/692,487 patent/US8340615B2/en not_active Expired - Fee Related
-
2012
- 2012-07-19 KR KR1020120078902A patent/KR101299616B1/ko not_active IP Right Cessation
-
2013
- 2013-02-06 KR KR1020130013334A patent/KR20130030278A/ko active IP Right Grant
- 2013-12-16 KR KR1020130156378A patent/KR20140006746A/ko not_active Application Discontinuation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007038394A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 微小構造体、マイクロマシン、有機トランジスタ、並びに電子機器及びこれらの作製方法 |
JP4587320B2 (ja) * | 2005-06-30 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 微小構造体、マイクロマシン、およびこれらの作製方法 |
US8053850B2 (en) | 2005-06-30 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Minute structure, micromachine, organic transistor, electric appliance, and manufacturing method thereof |
US8686405B2 (en) | 2005-06-30 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Minute structure, micromachine, organic transistor, electric appliance, and manufacturing method thereof |
JP2010245276A (ja) * | 2009-04-06 | 2010-10-28 | Fujitsu Ltd | 可変容量素子 |
TWI423283B (zh) * | 2009-04-06 | 2014-01-11 | Fujitsu Ltd | 可變電容元件及通訊裝置 |
JP2013519104A (ja) * | 2009-12-18 | 2013-05-23 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 2端子可変静電容量memsデバイス |
Also Published As
Publication number | Publication date |
---|---|
KR101299616B1 (ko) | 2013-08-23 |
KR101238242B1 (ko) | 2013-03-04 |
US7653371B2 (en) | 2010-01-26 |
SG121171A1 (en) | 2006-04-26 |
EP1645902A3 (en) | 2010-10-20 |
KR20140006746A (ko) | 2014-01-16 |
US8340615B2 (en) | 2012-12-25 |
EP1645902A2 (en) | 2006-04-12 |
US20100117761A1 (en) | 2010-05-13 |
TW200625356A (en) | 2006-07-16 |
JP2008147707A (ja) | 2008-06-26 |
AU2005211602A1 (en) | 2006-04-13 |
MXPA05010307A (es) | 2006-04-18 |
KR20130030278A (ko) | 2013-03-26 |
BRPI0503905A (pt) | 2006-05-09 |
KR20120102554A (ko) | 2012-09-18 |
CA2520457A1 (en) | 2006-03-27 |
SG155978A1 (en) | 2009-10-29 |
US20060077617A1 (en) | 2006-04-13 |
KR20060092925A (ko) | 2006-08-23 |
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