JP2006100662A5 - - Google Patents
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- Publication number
- JP2006100662A5 JP2006100662A5 JP2004286325A JP2004286325A JP2006100662A5 JP 2006100662 A5 JP2006100662 A5 JP 2006100662A5 JP 2004286325 A JP2004286325 A JP 2004286325A JP 2004286325 A JP2004286325 A JP 2004286325A JP 2006100662 A5 JP2006100662 A5 JP 2006100662A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor device
- manufacturing
- semiconductor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 44
- 239000010409 thin film Substances 0.000 claims 43
- 238000004519 manufacturing process Methods 0.000 claims 18
- 238000002425 crystallisation Methods 0.000 claims 4
- 230000008025 crystallization Effects 0.000 claims 4
- 239000010408 film Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004286325A JP4715149B2 (ja) | 2004-09-30 | 2004-09-30 | 薄膜半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004286325A JP4715149B2 (ja) | 2004-09-30 | 2004-09-30 | 薄膜半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006100662A JP2006100662A (ja) | 2006-04-13 |
JP2006100662A5 true JP2006100662A5 (enrdf_load_stackoverflow) | 2007-11-15 |
JP4715149B2 JP4715149B2 (ja) | 2011-07-06 |
Family
ID=36240159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004286325A Expired - Lifetime JP4715149B2 (ja) | 2004-09-30 | 2004-09-30 | 薄膜半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4715149B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI424499B (zh) | 2006-06-30 | 2014-01-21 | Semiconductor Energy Lab | 製造半導體裝置的方法 |
US7678701B2 (en) * | 2006-07-31 | 2010-03-16 | Eastman Kodak Company | Flexible substrate with electronic devices formed thereon |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936376A (ja) * | 1995-07-19 | 1997-02-07 | Sony Corp | 薄膜半導体装置の製造方法 |
JPH1012882A (ja) * | 1996-06-20 | 1998-01-16 | Toshiba Corp | 薄膜トランジスタ及びその製造方法 |
JP4566503B2 (ja) * | 2001-07-30 | 2010-10-20 | 株式会社半導体エネルギー研究所 | レーザー処理装置並びに半導体装置の作製方法 |
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2004
- 2004-09-30 JP JP2004286325A patent/JP4715149B2/ja not_active Expired - Lifetime