JP2006100628A5 - - Google Patents

Download PDF

Info

Publication number
JP2006100628A5
JP2006100628A5 JP2004285752A JP2004285752A JP2006100628A5 JP 2006100628 A5 JP2006100628 A5 JP 2006100628A5 JP 2004285752 A JP2004285752 A JP 2004285752A JP 2004285752 A JP2004285752 A JP 2004285752A JP 2006100628 A5 JP2006100628 A5 JP 2006100628A5
Authority
JP
Japan
Prior art keywords
plasma processing
processing method
plasma
mixed gas
chf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004285752A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006100628A (ja
JP4537818B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004285752A priority Critical patent/JP4537818B2/ja
Priority claimed from JP2004285752A external-priority patent/JP4537818B2/ja
Publication of JP2006100628A publication Critical patent/JP2006100628A/ja
Publication of JP2006100628A5 publication Critical patent/JP2006100628A5/ja
Application granted granted Critical
Publication of JP4537818B2 publication Critical patent/JP4537818B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004285752A 2004-09-30 2004-09-30 プラズマ処理方法 Expired - Fee Related JP4537818B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004285752A JP4537818B2 (ja) 2004-09-30 2004-09-30 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004285752A JP4537818B2 (ja) 2004-09-30 2004-09-30 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2006100628A JP2006100628A (ja) 2006-04-13
JP2006100628A5 true JP2006100628A5 (enExample) 2007-07-05
JP4537818B2 JP4537818B2 (ja) 2010-09-08

Family

ID=36240131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004285752A Expired - Fee Related JP4537818B2 (ja) 2004-09-30 2004-09-30 プラズマ処理方法

Country Status (1)

Country Link
JP (1) JP4537818B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278517A (ja) * 2005-03-28 2006-10-12 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP4599212B2 (ja) * 2005-04-15 2010-12-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
TWI437633B (zh) * 2006-05-24 2014-05-11 Ulvac Inc Dry etching method for interlayer insulating film
JP2017092142A (ja) * 2015-11-05 2017-05-25 東京エレクトロン株式会社 被処理体を処理する方法
CN108417526B (zh) * 2017-02-09 2020-11-03 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4173454B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001015479A (ja) * 1999-06-29 2001-01-19 Toshiba Corp 半導体装置の製造方法
JP4381526B2 (ja) * 1999-10-26 2009-12-09 東京エレクトロン株式会社 プラズマエッチング方法
AU2003244166A1 (en) * 2002-06-27 2004-01-19 Tokyo Electron Limited Plasma processing method
JP4067357B2 (ja) * 2002-08-05 2008-03-26 株式会社アルバック エッチング方法
JP2004071774A (ja) * 2002-08-05 2004-03-04 Tokyo Electron Ltd マルチチャンバシステムを用いたプラズマ処理方法
JP2004158821A (ja) * 2002-09-10 2004-06-03 Hitachi Ltd 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
TWI375991B (en) Method for multi-layer resist plasma etch
US20110027999A1 (en) Etch method in the manufacture of an integrated circuit
TW200746293A (en) Plasma etching method
JP2016525788A5 (enExample)
JP2009530863A5 (enExample)
JP2006073722A5 (enExample)
WO2003085172A3 (en) Method of etching a magnetic material and for fabricating a mram device
WO2003030238A1 (en) Processing method
JP2006100628A5 (enExample)
WO2015029817A1 (ja) エッチング方法
JP2013518446A5 (enExample)
US7049052B2 (en) Method providing an improved bi-layer photoresist pattern
JP2007503728A5 (enExample)
WO2004073025A3 (en) Methods of reducing photoresist distortion while etching in a plasma processing system
CN110970282B (zh) 气体生成方法及蚀刻装置
CN104471686B (zh) 等离子体蚀刻方法和等离子体蚀刻装置
JP2006108484A (ja) 層間絶縁膜のドライエッチング方法
CN103035508B (zh) 特征尺寸收缩方法
TW200537580A (en) Line edge roughness control
JP2006302924A5 (enExample)
JPH05251399A (ja) 枚葉式エッチャーによるシリコン窒化膜のエッチング方法
JP2008511167A5 (enExample)
JPH0885887A (ja) エッチング後処理方法
TW200725732A (en) Making method for semiconductor apparatus, making device for semiconductor apparatus, control program and computer memory media
US20090311871A1 (en) Organic arc etch selective for immersion photoresist