JP4537818B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP4537818B2
JP4537818B2 JP2004285752A JP2004285752A JP4537818B2 JP 4537818 B2 JP4537818 B2 JP 4537818B2 JP 2004285752 A JP2004285752 A JP 2004285752A JP 2004285752 A JP2004285752 A JP 2004285752A JP 4537818 B2 JP4537818 B2 JP 4537818B2
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Japan
Prior art keywords
etching
film
plasma
gas
plasma processing
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JP2004285752A
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Japanese (ja)
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JP2006100628A (ja
JP2006100628A5 (enExample
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誠浩 角屋
豊 大本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2004285752A 2004-09-30 2004-09-30 プラズマ処理方法 Expired - Fee Related JP4537818B2 (ja)

Priority Applications (1)

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JP2004285752A JP4537818B2 (ja) 2004-09-30 2004-09-30 プラズマ処理方法

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JP2004285752A JP4537818B2 (ja) 2004-09-30 2004-09-30 プラズマ処理方法

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JP2006100628A JP2006100628A (ja) 2006-04-13
JP2006100628A5 JP2006100628A5 (enExample) 2007-07-05
JP4537818B2 true JP4537818B2 (ja) 2010-09-08

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JP2004285752A Expired - Fee Related JP4537818B2 (ja) 2004-09-30 2004-09-30 プラズマ処理方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278517A (ja) * 2005-03-28 2006-10-12 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP4599212B2 (ja) * 2005-04-15 2010-12-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
TWI437633B (zh) * 2006-05-24 2014-05-11 Ulvac Inc Dry etching method for interlayer insulating film
JP2017092142A (ja) * 2015-11-05 2017-05-25 東京エレクトロン株式会社 被処理体を処理する方法
CN108417526B (zh) * 2017-02-09 2020-11-03 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4173454B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001015479A (ja) * 1999-06-29 2001-01-19 Toshiba Corp 半導体装置の製造方法
JP4381526B2 (ja) * 1999-10-26 2009-12-09 東京エレクトロン株式会社 プラズマエッチング方法
AU2003244166A1 (en) * 2002-06-27 2004-01-19 Tokyo Electron Limited Plasma processing method
JP4067357B2 (ja) * 2002-08-05 2008-03-26 株式会社アルバック エッチング方法
JP2004071774A (ja) * 2002-08-05 2004-03-04 Tokyo Electron Ltd マルチチャンバシステムを用いたプラズマ処理方法
JP2004158821A (ja) * 2002-09-10 2004-06-03 Hitachi Ltd 半導体装置の製造方法

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