JP2009530863A5 - - Google Patents

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Publication number
JP2009530863A5
JP2009530863A5 JP2009501539A JP2009501539A JP2009530863A5 JP 2009530863 A5 JP2009530863 A5 JP 2009530863A5 JP 2009501539 A JP2009501539 A JP 2009501539A JP 2009501539 A JP2009501539 A JP 2009501539A JP 2009530863 A5 JP2009530863 A5 JP 2009530863A5
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JP
Japan
Prior art keywords
etching
planarization layer
organic planarization
introducing
layer comprises
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009501539A
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English (en)
Japanese (ja)
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JP2009530863A (ja
Filing date
Publication date
Priority claimed from US11/385,256 external-priority patent/US7828987B2/en
Application filed filed Critical
Publication of JP2009530863A publication Critical patent/JP2009530863A/ja
Publication of JP2009530863A5 publication Critical patent/JP2009530863A5/ja
Pending legal-status Critical Current

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JP2009501539A 2006-03-20 2007-03-20 低ｋデュアルダマシン集積回路の形成に用いることのできる有機ｂａｒｃエッチングプロセス Pending JP2009530863A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/385,256 US7828987B2 (en) 2006-03-20 2006-03-20 Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits
PCT/US2007/007010 WO2007123616A2 (en) 2006-03-20 2007-03-20 Organic barc etch process capable of use in the formation of low k dual damascene integrated circuits

Publications (2)

Publication Number Publication Date
JP2009530863A JP2009530863A (ja) 2009-08-27
JP2009530863A5 true JP2009530863A5 (enExample) 2010-05-06

Family

ID=38518439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009501539A Pending JP2009530863A (ja) 2006-03-20 2007-03-20 低ｋデュアルダマシン集積回路の形成に用いることのできる有機ｂａｒｃエッチングプロセス

Country Status (6)

Country Link
US (1) US7828987B2 (enExample)
EP (1) EP2002467A2 (enExample)
JP (1) JP2009530863A (enExample)
KR (1) KR101046862B1 (enExample)
CN (1) CN101449363B (enExample)
WO (1) WO2007123616A2 (enExample)

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US8003488B2 (en) * 2007-09-26 2011-08-23 International Business Machines Corporation Shallow trench isolation structure compatible with SOI embedded DRAM
KR101615914B1 (ko) * 2008-02-01 2016-04-27 램 리써치 코포레이션 포토레지스트 스트립핑 동안 로우-ｋ 재료에 대한 손상 감소
DE102008016424B4 (de) * 2008-03-31 2011-06-01 Amd Fab 36 Limited Liability Company & Co. Kg Verfahren mit einem Bilden einer Kontaktloshöffnung und eines Grabens in einer dielektrischen Schicht mit kleinem ε
US8316527B2 (en) 2008-04-01 2012-11-27 Western Digital (Fremont), Llc Method for providing at least one magnetoresistive device
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US8349195B1 (en) 2008-06-27 2013-01-08 Western Digital (Fremont), Llc Method and system for providing a magnetoresistive structure using undercut free mask
US8138093B2 (en) * 2009-08-12 2012-03-20 International Business Machines Corporation Method for forming trenches having different widths and the same depth
US8513129B2 (en) * 2010-05-28 2013-08-20 Applied Materials, Inc. Planarizing etch hardmask to increase pattern density and aspect ratio
CN103107158A (zh) * 2011-11-11 2013-05-15 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
CN103165576B (zh) * 2011-12-13 2015-10-14 中芯国际集成电路制造(上海)有限公司 半导体器件及其制造方法
US8551877B2 (en) * 2012-03-07 2013-10-08 Tokyo Electron Limited Sidewall and chamfer protection during hard mask removal for interconnect patterning
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JP2014165191A (ja) * 2013-02-21 2014-09-08 Seiko Instruments Inc 紫外線消去型の不揮発性半導体装置
US9400529B2 (en) 2013-09-27 2016-07-26 Apple Inc. Electronic device having housing with embedded interconnects
US20150118832A1 (en) * 2013-10-24 2015-04-30 Applied Materials, Inc. Methods for patterning a hardmask layer for an ion implantation process
US9385086B2 (en) * 2013-12-10 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Bi-layer hard mask for robust metallization profile
US9093387B1 (en) * 2014-01-08 2015-07-28 International Business Machines Corporation Metallic mask patterning process for minimizing collateral etch of an underlayer
US9385000B2 (en) * 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
US9454177B2 (en) 2014-02-14 2016-09-27 Apple Inc. Electronic devices with housing-based interconnects and coupling structures
CN105097493B (zh) * 2014-04-24 2020-09-08 中芯国际集成电路制造(上海)有限公司 一种制作半导体器件的方法
CN104900510B (zh) * 2015-06-29 2018-01-26 上海华力微电子有限公司 刻蚀映射关系模型和控制浅槽隔离刻蚀关键尺寸的方法
US9859156B2 (en) * 2015-12-30 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnection structure with sidewall dielectric protection layer
US10157773B1 (en) 2017-11-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having layer with re-entrant profile and method of forming the same
CN111627855B (zh) * 2019-06-27 2021-05-25 长江存储科技有限责任公司 互连结构及其形成方法
CN113053805B (zh) * 2021-03-11 2022-06-10 长鑫存储技术有限公司 半导体结构的形成方法及半导体结构
US12100615B2 (en) * 2021-12-23 2024-09-24 Nanya Technology Corporation Method of manufacturing semiconductor device

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