JP2006100308A - 半導体装置、全波整流回路、半波整流回路 - Google Patents

半導体装置、全波整流回路、半波整流回路 Download PDF

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Publication number
JP2006100308A
JP2006100308A JP2004280926A JP2004280926A JP2006100308A JP 2006100308 A JP2006100308 A JP 2006100308A JP 2004280926 A JP2004280926 A JP 2004280926A JP 2004280926 A JP2004280926 A JP 2004280926A JP 2006100308 A JP2006100308 A JP 2006100308A
Authority
JP
Japan
Prior art keywords
well region
diffusion layer
type
conductivity type
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004280926A
Other languages
English (en)
Japanese (ja)
Inventor
Kazutomo Goshima
一智 五嶋
Hiroshi Saito
斎藤　　博
Yoshiyuki Fukuda
良之 福田
Tsutomu Nakazawa
務 中沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2004280926A priority Critical patent/JP2006100308A/ja
Priority to TW094130835A priority patent/TWI288461B/zh
Priority to CNB2005100230061A priority patent/CN100416831C/zh
Priority to US11/234,871 priority patent/US20060131661A1/en
Priority to KR1020050089719A priority patent/KR100658549B1/ko
Publication of JP2006100308A publication Critical patent/JP2006100308A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Rectifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2004280926A 2004-09-28 2004-09-28 半導体装置、全波整流回路、半波整流回路 Withdrawn JP2006100308A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004280926A JP2006100308A (ja) 2004-09-28 2004-09-28 半導体装置、全波整流回路、半波整流回路
TW094130835A TWI288461B (en) 2004-09-28 2005-09-08 Semiconductor device, full wave rectifier circuit, and half wave rectifier circuit
CNB2005100230061A CN100416831C (zh) 2004-09-28 2005-09-22 半导体装置、全波整流电路和半波整流电路
US11/234,871 US20060131661A1 (en) 2004-09-28 2005-09-26 Semiconductor device full-wave rectifier circuit and half-wave rectifier circuit
KR1020050089719A KR100658549B1 (ko) 2004-09-28 2005-09-27 반도체 장치, 전파 정류 회로 및 반파 정류 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004280926A JP2006100308A (ja) 2004-09-28 2004-09-28 半導体装置、全波整流回路、半波整流回路

Publications (1)

Publication Number Publication Date
JP2006100308A true JP2006100308A (ja) 2006-04-13

Family

ID=36239871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004280926A Withdrawn JP2006100308A (ja) 2004-09-28 2004-09-28 半導体装置、全波整流回路、半波整流回路

Country Status (5)

Country Link
US (1) US20060131661A1 (zh)
JP (1) JP2006100308A (zh)
KR (1) KR100658549B1 (zh)
CN (1) CN100416831C (zh)
TW (1) TWI288461B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010230A (ja) * 2008-06-25 2010-01-14 Shindengen Electric Mfg Co Ltd Ｅｓｄ保護素子および該ｅｓｄ保護素子を設けた半導体装置
US8304856B2 (en) 2009-10-02 2012-11-06 Sanyo Semiconductor Co., Ltd. Semiconductor device
US10651272B2 (en) 2017-03-14 2020-05-12 United Semiconductor Japan Co., Ltd. Semiconductor device and full-wave rectifier circuit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018148693A (ja) * 2017-03-06 2018-09-20 日立オートモティブシステムズ株式会社 電動モータの駆動制御装置
CN113488526B (zh) * 2021-07-19 2023-10-13 江苏韦达半导体有限公司 微型可编程浪涌防护器件及其制作工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786652B2 (ja) * 1989-02-28 1998-08-13 株式会社東芝 半導体装置
JPH0837283A (ja) * 1994-07-21 1996-02-06 Toshiba Corp 半導体集積回路
JP3501541B2 (ja) * 1995-03-10 2004-03-02 新日本製鐵株式会社 全波整流回路
JPH09321231A (ja) * 1996-03-29 1997-12-12 Toshiba Microelectron Corp 半導体回路、ｍｏｓ集積回路およびｉｃカード
JPH10256483A (ja) 1997-03-11 1998-09-25 Toshiba Corp Ｍｏｓ型半導体集積回路
US6538266B2 (en) * 2000-08-11 2003-03-25 Samsung Electronics Co., Ltd. Protection device with a silicon-controlled rectifier
US6657274B2 (en) * 2001-10-11 2003-12-02 Microsemi Corporation Apparatus for controlling a high voltage circuit using a low voltage circuit
CN1466208A (zh) * 2002-07-01 2004-01-07 旺宏电子股份有限公司 双极性输入垫的静电放电保护装置及方法
US6777721B1 (en) * 2002-11-14 2004-08-17 Altera Corporation SCR device for ESD protection
US7109437B2 (en) * 2003-12-04 2006-09-19 Lincoln Global, Inc. Electric ARC welder with background current
JP4519716B2 (ja) * 2005-06-02 2010-08-04 富士通セミコンダクター株式会社 整流回路用ダイオードを有する半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010230A (ja) * 2008-06-25 2010-01-14 Shindengen Electric Mfg Co Ltd Ｅｓｄ保護素子および該ｅｓｄ保護素子を設けた半導体装置
US8304856B2 (en) 2009-10-02 2012-11-06 Sanyo Semiconductor Co., Ltd. Semiconductor device
US10651272B2 (en) 2017-03-14 2020-05-12 United Semiconductor Japan Co., Ltd. Semiconductor device and full-wave rectifier circuit

Also Published As

Publication number Publication date
KR20060051673A (ko) 2006-05-19
CN100416831C (zh) 2008-09-03
TW200618184A (en) 2006-06-01
US20060131661A1 (en) 2006-06-22
CN1783492A (zh) 2006-06-07
KR100658549B1 (ko) 2006-12-19
TWI288461B (en) 2007-10-11

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