JP2006054402A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000008569 process Effects 0.000 title abstract description 20
- 239000003990 capacitor Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000010410 layer Substances 0.000 claims abstract description 24
- 239000002344 surface layer Substances 0.000 claims abstract description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000011229 interlayer Substances 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 半導体装置1の容量素子形成領域20において、P型の半導体基板10の表層には、導電層としてN型ウエル22が形成されている。N型ウエル22が形成された半導体基板10の表面には、容量膜24が成膜されている。ここで、半導体基板10表面における容量膜24が成膜された部分は、実質的に平坦である。容量膜24上には、上部電極26が設けられている。上部電極26は、容量膜24を挟んで対向するN型ウエル22との間で容量素子(オンチップキャパシタ)を構成している。
【選択図】 図1
Description
1a 半導体装置
1b 半導体装置
10 半導体基板
20 容量素子形成領域
22 N型ウエル
23 拡散層
24,25 容量膜
24a 金属元素拡散防止膜
26,27 上部電極
30 トランジスタ形成領域
32 P型ウエル
34 ソース・ドレイン領域
36 ゲート絶縁膜
38 ゲート電極
40 サイドウォール
42 層間窒化膜
44 絶縁膜
52,54,56,58 コンタクト
60 層間絶縁膜
72 シリサイドブロック
74,76 レジスト
62,64,66,68 STI
Claims (9)
- 表層に導電層が設けられた半導体基板と、
前記半導体基板の表面のうち実質的に平坦な部分上に設けられた容量膜と、
前記容量膜上に設けられ、前記容量膜を挟んで対向する前記導電層との間で容量素子を構成する上部電極と、
を備えることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記容量膜は、前記半導体基板側の表層に設けられた、金属元素の拡散を防止する絶縁膜を有する、半導体装置。 - 請求項1または2に記載の半導体装置において、
前記容量膜は、シリコン酸化膜よりも高い誘電率をもつ高誘電率膜である、半導体装置。 - 請求項1〜3の何れか一項に記載の半導体装置において、
前記半導体基板に設けられ、当該半導体装置の内部回路を構成するトランジスタを備え、
前記容量膜は、前記トランジスタのゲート絶縁膜に比して厚い、半導体装置。 - 請求項4に記載の半導体装置において、
前記容量膜は、前記トランジスタのゲート絶縁膜に比して電気的換算膜厚が薄い、半導体装置。 - 請求項4または5に記載の半導体装置において、
前記トランジスタ上に設けられた層間窒化膜と、
前記層間窒化膜上に設けられた絶縁膜と、を備え、
前記絶縁膜は、前記容量膜と一体となって設けられている、半導体装置。 - 請求項1〜6の何れか一項に記載の半導体装置において、
前記半導体基板における前記容量膜が設けられている部分は、シリサイド化されていない、半導体装置。 - 半導体基板の表層に導電層を形成する導電層形成工程と、
前記導電層が形成された前記半導体基板の表面のうち実質的に平坦な部分上に容量膜を形成する容量膜形成工程と、
前記容量膜上に、前記容量膜を挟んで対向する前記導電層との間で容量素子を構成する上部電極を形成する電極形成工程と、
を含むことを特徴とする、半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記半導体基板は、トランジスタ形成領域と容量素子形成領域とを有し、
前記トランジスタ形成領域にトランジスタを形成するトランジスタ形成工程と、
前記容量素子形成領域にシリサイドブロックを形成するシリサイドブロック形成工程と、
前記トランジスタ形成工程および前記シリサイドブロック形成工程よりも後に、前記半導体基板の表面における前記シリサイドブロックが形成されていない部分をシリサイド化するシリサイド工程と、
前記シリサイド工程よりも後に前記シリサイドブロックを除去するシリサイドブロック除去工程と、を含み、
前記容量膜形成工程は、前記シリサイドブロック除去工程よりも後に実行される、半導体装置の製造方法。
Priority Applications (2)
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JP2004236770A JP4669246B2 (ja) | 2004-08-16 | 2004-08-16 | 半導体装置およびその製造方法 |
US11/204,163 US7498626B2 (en) | 2004-08-16 | 2005-08-16 | Semiconductor device and method of manufacturing the same |
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JP2004236770A JP4669246B2 (ja) | 2004-08-16 | 2004-08-16 | 半導体装置およびその製造方法 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070141776A1 (en) * | 2005-12-19 | 2007-06-21 | Jung-Ching Chen | Semiconductor device having capacitor and fabricating method thereof |
JP2011138885A (ja) * | 2009-12-28 | 2011-07-14 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
US9412883B2 (en) | 2011-11-22 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for MOS capacitors in replacement gate process |
CN104752422B (zh) * | 2013-12-30 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US10418364B2 (en) * | 2016-08-31 | 2019-09-17 | Globalfoundries Inc. | Semiconductor device structure with self-aligned capacitor device |
US10680120B2 (en) * | 2018-04-05 | 2020-06-09 | Vanguard International Semiconductor Corporation | Semiconductor device and method for manufacturing the same |
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JPH05259115A (ja) * | 1992-03-11 | 1993-10-08 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06291262A (ja) * | 1993-03-31 | 1994-10-18 | Sony Corp | 半導体装置の製造方法 |
JP2000124336A (ja) * | 1998-10-12 | 2000-04-28 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
JP2000174216A (ja) * | 1998-10-02 | 2000-06-23 | Sony Corp | 半導体装置の製造方法 |
JP2001308274A (ja) * | 2000-04-24 | 2001-11-02 | Nec Corp | 電圧履歴記録素子およびそれを用いた電子デバイスの印加電圧履歴記録方法 |
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JP2003158197A (ja) * | 2001-11-22 | 2003-05-30 | Sony Corp | 半導体装置の製造方法 |
WO2004021440A1 (en) * | 2002-09-02 | 2004-03-11 | Advanced Micro Devices, Inc. | Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area |
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- 2004-08-16 JP JP2004236770A patent/JP4669246B2/ja active Active
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JPH01222468A (ja) * | 1988-03-02 | 1989-09-05 | Toshiba Corp | 半導体装置用キャパシタ |
JPH05259115A (ja) * | 1992-03-11 | 1993-10-08 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06291262A (ja) * | 1993-03-31 | 1994-10-18 | Sony Corp | 半導体装置の製造方法 |
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US20060033139A1 (en) | 2006-02-16 |
US7498626B2 (en) | 2009-03-03 |
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