JP2006049896A5 - - Google Patents
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- Publication number
- JP2006049896A5 JP2006049896A5 JP2005218707A JP2005218707A JP2006049896A5 JP 2006049896 A5 JP2006049896 A5 JP 2006049896A5 JP 2005218707 A JP2005218707 A JP 2005218707A JP 2005218707 A JP2005218707 A JP 2005218707A JP 2006049896 A5 JP2006049896 A5 JP 2006049896A5
- Authority
- JP
- Japan
- Prior art keywords
- cap layer
- semiconductor device
- metal component
- interface region
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 19
- 229910052751 metal Inorganic materials 0.000 claims 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052684 Cerium Inorganic materials 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- 229910052706 scandium Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- 229910052727 yttrium Inorganic materials 0.000 claims 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/909,980 US7253501B2 (en) | 2004-08-03 | 2004-08-03 | High performance metallization cap layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006049896A JP2006049896A (ja) | 2006-02-16 |
| JP2006049896A5 true JP2006049896A5 (enExample) | 2008-01-24 |
Family
ID=35756619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005218707A Pending JP2006049896A (ja) | 2004-08-03 | 2005-07-28 | ハイパフォーマンスメタライゼーションキャップ層 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7253501B2 (enExample) |
| JP (1) | JP2006049896A (enExample) |
| CN (2) | CN2793923Y (enExample) |
| TW (1) | TWI251300B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7247946B2 (en) * | 2005-01-18 | 2007-07-24 | International Business Machines Corporation | On-chip Cu interconnection using 1 to 5 nm thick metal cap |
| KR100808601B1 (ko) * | 2006-12-28 | 2008-02-29 | 주식회사 하이닉스반도체 | 다마신 공정을 이용한 반도체 소자의 다층 금속배선형성방법 |
| DE102007004867B4 (de) * | 2007-01-31 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid |
| US8525339B2 (en) | 2011-07-27 | 2013-09-03 | International Business Machines Corporation | Hybrid copper interconnect structure and method of fabricating same |
| US9312203B2 (en) | 2013-01-02 | 2016-04-12 | Globalfoundries Inc. | Dual damascene structure with liner |
| US9490209B2 (en) | 2013-03-13 | 2016-11-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electro-migration barrier for Cu interconnect |
| US20150087144A1 (en) * | 2013-09-26 | 2015-03-26 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method of manufacturing metal gate semiconductor device |
| US9659857B2 (en) | 2013-12-13 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method making the same |
| US20150206798A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure And Method of Forming |
| US9437484B2 (en) | 2014-10-17 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch stop layer in integrated circuits |
| CN108573942B (zh) * | 2017-03-09 | 2021-09-14 | 联华电子股份有限公司 | 内连线结构及其制作方法 |
| US11075113B2 (en) | 2018-06-29 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal capping layer and methods thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0148325B1 (ko) * | 1995-03-04 | 1998-12-01 | 김주용 | 반도체 소자의 금속 배선 형성방법 |
| US5892281A (en) * | 1996-06-10 | 1999-04-06 | Micron Technology, Inc. | Tantalum-aluminum-nitrogen material for semiconductor devices |
| US6153519A (en) * | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
| US6074960A (en) * | 1997-08-20 | 2000-06-13 | Micron Technology, Inc. | Method and composition for selectively etching against cobalt silicide |
| US6255217B1 (en) * | 1999-01-04 | 2001-07-03 | International Business Machines Corporation | Plasma treatment to enhance inorganic dielectric adhesion to copper |
| US6727588B1 (en) | 1999-08-19 | 2004-04-27 | Agere Systems Inc. | Diffusion preventing barrier layer in integrated circuit inter-metal layer dielectrics |
| US6165891A (en) | 1999-11-22 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer |
| JP3851752B2 (ja) * | 2000-03-27 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
| US6709874B2 (en) | 2001-01-24 | 2004-03-23 | Infineon Technologies Ag | Method of manufacturing a metal cap layer for preventing damascene conductive lines from oxidation |
| US6566242B1 (en) * | 2001-03-23 | 2003-05-20 | International Business Machines Corporation | Dual damascene copper interconnect to a damascene tungsten wiring level |
| JP2003068848A (ja) * | 2001-08-29 | 2003-03-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6680500B1 (en) | 2002-07-31 | 2004-01-20 | Infineon Technologies Ag | Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers |
| US7105429B2 (en) * | 2004-03-10 | 2006-09-12 | Freescale Semiconductor, Inc. | Method of inhibiting metal silicide encroachment in a transistor |
-
2004
- 2004-08-03 US US10/909,980 patent/US7253501B2/en not_active Expired - Lifetime
-
2005
- 2005-02-22 TW TW094105200A patent/TWI251300B/zh not_active IP Right Cessation
- 2005-04-18 CN CNU2005200168507U patent/CN2793923Y/zh not_active Expired - Lifetime
- 2005-04-18 CN CNB2005100644921A patent/CN100452385C/zh not_active Expired - Lifetime
- 2005-07-28 JP JP2005218707A patent/JP2006049896A/ja active Pending
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